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1. 发明授权

EP1628340B1 Verfahren zur Integration von drei Bipolartransistoren in einen Halbleiterkörper, Mehrschichtbauelement und Halbleiteranordnung 有权
标题翻译：一种用于在半导体本体3个的双极型晶体管的集成，多层器件和半导体器件的方法
公开(公告)号：EP1628340B1
公开(公告)日：2009-03-25
申请号：EP05016050.6
申请日：2005-07-23
申请人： ATMEL Germany GmbH
发明人： Bromberger, Christoph, Dipl.-Phys.
IPC分类号： H01L21/8222 , H01L27/082 , H01L27/06
CPC分类号： H01L27/0744 , H01L21/8222 , H01L27/0823

2. 发明公开

EP1429390A3 Bipolar junction transistor 审中-公开
标题翻译： Übergangbipolartransistor
公开(公告)号：EP1429390A3
公开(公告)日：2005-11-09
申请号：EP03257640.7
申请日：2003-12-04
申请人： Micrel, Inc.
发明人： Mallikarjunaswamy, Shekar
IPC分类号： H01L29/732 , H01L29/10
CPC分类号： H01L29/0821 , H01L21/8249 , H01L27/0705 , H01L27/0744 , H01L29/0692 , H01L29/1004 , H01L29/7322 , H01L29/7378 , H01L29/7393
摘要： A bipolar transistor (100) includes an auxiliary diffusion region (116) formed in the base region (108) having a conductivity type opposite to the base region and being electrically coupled to the base region. Alternately, the auxiliary diffusion region can be formed in the collector region where the auxiliary diffusion region has a conductivity type opposite to the collector region and is electrically coupled to the collector region. The auxiliary diffusion region forms a secondary parasitic transistor in the bipolar transistor having the effect of suppressing parasitic bipolar conduction caused by a primary parasitic bipolar device associated with the bipolar transistor.

3. 发明公开

EP1861919A1 VERSTÄRKERSCHALTUNG 审中-公开
公开(公告)号：EP1861919A1
公开(公告)日：2007-12-05
申请号：EP06723489.8
申请日：2006-03-17
申请人： ATMEL Germany GmbH
发明人： BROMBERGER, Christoph
IPC分类号： H03F1/22 , H03F1/32 , H03F3/195 , H01L27/082
CPC分类号： H03F1/22 , H01L27/0744 , H01L27/0823 , H03F1/32 , H03F3/195 , H03F2200/18
摘要： The invention relates to an amplifier circuit for amplifying an input signal (iEIN) with a vertically integrated cascode (10). Said cascode comprises: a collector semiconductor region (1) of a collector (C), a first base semiconductor region (2) pertaining to a first base (B1) and adjacent to the collector semiconductor region (1), a second base semiconductor region (4) pertaining to a second base (B2), an intermediate base semiconductor region (3) which is adjacent to both the first base semiconductor region (2) and the second base semiconductor region (4), and an emitter semiconductor region (5) pertaining to an emitter (E) and adjacent to the second base semiconductor region (4). According to the invention, a signal input (EIN) is connected to the second base (B2) and the first base (Bl) is connected to the second base by means of a network (NW) in such a way that a small signal voltage (UBl) on the first base (Bl) is coupled to a small signal voltage (Ub2) on the second base (B2) and/or a small signal current (iB2) is coupled through the second base (B2).
摘要翻译：本发明涉及用垂直集成共源共栅（10）放大输入信号（iEIN）的放大器电路。所述共源共栅包括：集电极（C）的集电极半导体区（1），属于第一基极（B1）且与集电极半导体区（1）相邻的第一基极半导体区（2），第二基极半导体区（2），与第一基础半导体区（2）和第二基础半导体区（4）两者相邻的中间基础半导体区（3），以及发射极半导体区（5））属于发射极（E）并与第二基础半导体区（4）相邻。根据本发明，信号输入（EIN）连接到第二基座（B2），并且第一基座（B1）通过网络（NW）连接到第二基座，使得小信号电压（B1）上的第一基极（UB1）耦合到第二基极（B2）上的小信号电压（Ub2）和/或通过第二基极（B2）耦合小信号电流（iB2）。

4. 发明公开

EP1646084A1 A method in the fabrication of an integrated injection logic circuit 审中-公开
标题翻译： Verfahren zur Herstellung einer integrierten Injektions-Logikschaltung
公开(公告)号：EP1646084A1
公开(公告)日：2006-04-12
申请号：EP04023839.6
申请日：2004-10-06
申请人： Infineon Technologies AG
发明人： Johansson, Ted , Norström, Hans
IPC分类号： H01L21/8226 , H01L27/02
CPC分类号： H01L21/8226 , H01L21/8224 , H01L27/0214 , H01L27/0237 , H01L27/0744 , H01L27/0821 , H01L29/6625 , H01L29/735
摘要： A method in the fabrication of an I 2 L circuit comprises (i) forming a common base of a lateral bipolar transistor and emitter of a vertical bipolar multicollector transistor, a common collector of the lateral transistor and base of the vertical multicollector transistor, and an emitter (10) of the lateral transistor in a substrate; (ii) forming, from a first deposited polycrystalline layer, a contact region (7') for the common collector/base and a contact region (7'') for the emitter of the lateral transistor; (iii) forming an isolation structure (8) for electric isolation of the polycrystalline contact region (7') for the common collector/base; and (iv) forming, from a second deposited polycrystalline layer, a contact region (11') for the common base/emitter and multiple collectors (11'') of the vertical multicollector transistor.
摘要翻译：制造I 2 L电路的方法包括：（i）形成横向双极晶体管和垂直双极多晶体管晶体管的发射极，垂直多晶体管的横向晶体管和基极的公共集电极的公共基极，以及发射极（10）; （ii）从第一沉积多晶层形成用于公共集电极/基极的接触区域（7'）和用于横向晶体管的发射极的接触区域（7“）; （iii）形成用于电绝缘用于共用集电极/基极的多晶接触区域（7'）的隔离结构（8）和（iv）从第二沉积的多晶层形成用于所述垂直多聚电晶体管的公共基极/发射极和多个集电极（11“）的接触区域（11'）。

5. 发明公开

EP0032046A3 Circuitry for protecting a semiconductor device against static electricity 失效
标题翻译：用于保护静电电容的半导体器件的电路
公开(公告)号：EP0032046A3
公开(公告)日：1981-12-02
申请号：EP80304702
申请日：1980-12-23
申请人： FUJITSU LIMITED
发明人： Kokado, Masayuki , Sumi, Hedezi
IPC分类号： H01L27/02 , H01L27/06
CPC分类号： H03K17/08126 , H01L27/0248 , H01L27/0744 , H01L27/0817
摘要： In a semiconductor device, such as a bipolar integrated circuit, an input element (12) requires protection, against possible damage by static electricity, by means capable of acting more rapidly and with less capacitance than a simple diode. Such means are provided by a PNP-transistor (16), having its emitter connected to an electrical reference potential point (14) of the device, and an NPN-transistor (17) having its emitter connected to a signal input point (10) of the input element (12), and having its collector and base connected respectively to the base and collector of the PNP-transistor (16), there being a resistive connection (18) between the respective bases of the two transistors (16,17).

6. 发明公开

EP1429390A2 Bipolar junction transistor 审中-公开
标题翻译：双极结型晶体管
公开(公告)号：EP1429390A2
公开(公告)日：2004-06-16
申请号：EP03257640.7
申请日：2003-12-04
申请人： Micrel, Inc.
发明人： Mallikarjunaswamy, Shekar
IPC分类号： H01L29/732 , H01L29/10
CPC分类号： H01L29/0821 , H01L21/8249 , H01L27/0705 , H01L27/0744 , H01L29/0692 , H01L29/1004 , H01L29/7322 , H01L29/7378 , H01L29/7393
摘要： A bipolar transistor (100) includes an auxiliary diffusion region (116) formed in the base region (108) having a conductivity type opposite to the base region and being electrically coupled to the base region. Alternately, the auxiliary diffusion region can be formed in the collector region where the auxiliary diffusion region has a conductivity type opposite to the collector region and is electrically coupled to the collector region. The auxiliary diffusion region forms a secondary parasitic transistor in the bipolar transistor having the effect of suppressing parasitic bipolar conduction caused by a primary parasitic bipolar device associated with the bipolar transistor.
摘要翻译：双极型晶体管（100）包括形成在基极区（108）中的辅助扩散区（116），其具有与基极区相反的导电类型并且电耦合到基极区。可选地，辅助扩散区可以形成在集电极区中，其中辅助扩散区具有与集电极区相反的导电类型并且电耦合到集电极区。辅助扩散区在双极晶体管中形成具有抑制由与双极晶体管相关联的主寄生双极器件引起的寄生双极性传导的效果的副寄生晶体管。

7. 发明授权

EP0167929B1 Halbleiter-Leistungsschalter mit Thyristor 失效
标题翻译：半导体功率开关与三极管
公开(公告)号：EP0167929B1
公开(公告)日：1988-02-10
申请号：EP85107921.0
申请日：1985-06-26
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Lehmann, Erhard, Dipl.-Ing.
IPC分类号： H01L29/743
CPC分类号： H01L25/18 , H01L27/0744 , H01L2224/32145 , H01L2924/0002 , H01L2924/00

8. 发明公开

EP0167929A1 Halbleiter-Leistungsschalter mit Thyristor 失效
标题翻译：半导体断路器具有晶闸管。
公开(公告)号：EP0167929A1
公开(公告)日：1986-01-15
申请号：EP85107921.0
申请日：1985-06-26
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Lehmann, Erhard, Dipl.-Ing.
IPC分类号： H01L29/743
CPC分类号： H01L25/18 , H01L27/0744 , H01L2224/32145 , H01L2924/0002 , H01L2924/00
摘要： Der Leistungsschalter besteht aus einem asymmetrisch sperrenden Thyristor (1) (ASCR), dem eine Diode (2) in Reihe geschaltet ist. Sowohl ASCR als auch Diode benötigen gegenüber einem für gleiche Sperrspannung in Rückwärtsrichtung (U RRM ) ausgelegten symmetrisch sperrenden Thyristor jeweils etwa nur die halbe Mittelzonendicke. Damit ergibt sich für die Reihenschaltung eine wesentlich geringere Sperrverzögerungsladung (Q r ).
摘要翻译：该断路器包括一个不对称阻断晶闸管（1）（ASCR），二极管（2）串联连接的。既ASCR二极管还需要在设计在每种情况下对称地阻断晶闸管大约只有一半的中心区域厚度反方向（URRM）相同的阻断电压相反。这产生了低得多的反向恢复电荷（Q RR）的串联连接。

9. 发明公开

EP0094145A3 High gain thyristor switching circuit 失效
标题翻译：高增益电路切换电路
公开(公告)号：EP0094145A3
公开(公告)日：1985-06-19
申请号：EP83301549
申请日：1983-03-21
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Hahn, Larry A.
IPC分类号： H03K17/04 , H01L27/06
CPC分类号： H01L27/0744 , H03K17/0403
摘要： A three terminal power switch utilizing a lateral thyristor switching circuit is disclosed which exhibits very high gain for both turn-on and turn-off. The gate turn-off capability of the lateral thyristor (10) is accomplished utilizing a secondary shunting thyristor (11) to pull current out of the gate in response to the turn-off signal. The output thyristor (10) is designed to maximize its turn-off gain, and the drive thyristor (11) is designed for optimum forward conduction characteristics; the output thyristor (10) carries approximately ten times the current of the drive thyristor (11), in one embodiment.

10. 发明公开

EP1343249A3 Device having inductors and capacitors and a fabrication method thereof 审中-公开
标题翻译：排列与电感，电容，和制造过程
公开(公告)号：EP1343249A3
公开(公告)日：2009-09-09
申请号：EP03004397.0
申请日：2003-03-03
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Lee, Moon-chul , Song, In-sang , Hong, Young-tack , Jeong, Sung-hye , Hong, Byung-yoo
IPC分类号： H01L27/01 , H01L27/06 , H01L27/07 , H03H7/01 , H01L23/64 , H01L23/522 , H01L21/02
CPC分类号： H01L27/016 , H01L23/5223 , H01L23/5227 , H01L27/0744 , H01L28/10 , H01L28/40 , H01L2924/0002 , H03H7/00 , H03H7/0115 , H03H2001/0078 , H03H2001/0085 , H05K1/16 , H05K1/162 , H05K1/165 , H05K2201/1006 , H05K2201/10545 , Y10S438/977 , H01L2924/00
摘要： An LC device having a substrate, a support layer having upper and lower sides formed on the substrate, inductors formed on either the upper or lower side of the support layer, and capacitors formed in the opposite side of the support layer. The support layer may be formed of a low-k dielectric material, and a connection portion may be provided to connect the inductors and capacitors in the support layer. The inductors and capacitors are disposed in a stacked structure on the upper and lower sides of the low-k dielectric support layer on the substrate, so that space efficiency may be maximized on the substrate. The low-k dielectric support layer provides support between the inductors and capacitors so that substrate loss is minimized and a Q factor of the inductors is enhanced.

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