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1. 发明授权

EP1471637B1 Method for fabricating cantilevered type film bulk acoustic resonator and film bulk acoustic resonator fabricated by the same 有权
标题翻译：自支撑其制备薄膜体声波谐振器（FBAR）和方法
公开(公告)号：EP1471637B1
公开(公告)日：2011-03-23
申请号：EP04251968.6
申请日：2004-04-01
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Kim, Sang-chae, 902-2001 Jugong Apartment , Song, In-sang , Hong, Young-tack
IPC分类号： H03H9/17 , H01L41/047
CPC分类号： H03H3/02 , H03H9/172 , H03H2003/022 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
摘要： A bottom electrode (120) is formed directly on a sacrificial layer (160) and on exposed dielectric layer (110) on the substrate (100). A top electrode (140) is formed on the piezoelectric layer (120) on the bottom electrode. The sacrificial layer is removed after top electrode formation to form air gap (170). Another dielectric layer is formed on the top electrode. An independent claim is also included for film bulk acoustic resonator.

2. 发明授权

EP1748457B1 Mems switch and manufacturing method thereof 有权
标题翻译： MEMS开关及其制造方法
公开(公告)号：EP1748457B1
公开(公告)日：2010-06-23
申请号：EP06253784.0
申请日：2006-07-19
申请人： Samsung Electronics Co., Ltd.
发明人： Jeong, Hee-moon , Kwon, Sang-wook , Kim, Che-heung , Kim, Jong-seok , Kim, Jun-o, 705-604 Manhyeon-maeul , Hong, Young-tack , Song, In-sang , Lee, Sang-hun
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , H01H2059/0054

3. 发明授权

EP1659688B1 Monolithic duplexer 有权
标题翻译：单片双工器
公开(公告)号：EP1659688B1
公开(公告)日：2010-01-13
申请号：EP05024698.2
申请日：2005-11-11
申请人： Samsung Electronics Co., Ltd.
发明人： Park, Yun-kwon , Song, In-sang , Yun, Seok-chul , Hong, Seog-woo , Ha, Byeoung-ju , Shim, Dong-ha , Park, Hae-seok , Nam, Kuang-woo , Kim, Duck-hwan
IPC分类号： H03H9/70 , H03H9/10 , H03H9/58 , H03H3/02
CPC分类号： H03H3/02 , H03H9/0571 , H03H9/706 , Y10T29/42 , Y10T29/43 , Y10T29/4902 , Y10T29/49155

4. 发明授权

EP1750370B1 Monolithic duplexer and fabrication method thereof 有权
标题翻译：单片双工器和过程及其制备
公开(公告)号：EP1750370B1
公开(公告)日：2009-12-09
申请号：EP06253822.8
申请日：2006-07-20
申请人： Samsung Electronics Co., Ltd.
发明人： Sul, Sang-chul, 901-406 Byeokjeokgol , Kim, Chul-soo , Kim, Duck-hwan, 505-803 Hosu-maeul , Song, In-sang , Lee, Moon-chul , Jung, Kyu-dong , Shin, Jea-shik
IPC分类号： H03H9/10 , H03H3/02
CPC分类号： H03H3/02 , H03H9/0571 , H03H9/706

5. 发明公开

EP1598934A3 Filter comprising thin-film resonators and inductor, duplexer and fabricating methods thereof 有权转让
标题翻译：与薄膜谐振器和电感器双工器和它们的制造工艺过滤
公开(公告)号：EP1598934A3
公开(公告)日：2007-11-14
申请号：EP05253005.2
申请日：2005-05-17
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Song, In-sang , Ha, Byeoung-ju , Park, Yun-kwon , Kim, Jong-seok , Kim, Duck-hwan , Nam, Kuang-woo , Park, Hae-seok , Hong, Seog-woo
IPC分类号： H03H9/58 , H03H9/70 , H03H9/17 , H03H9/05 , H03H3/02
CPC分类号： H03H9/564 , H03H3/02 , H03H9/0542 , H03H9/0571 , H03H9/173 , H03H9/568 , H03H9/605 , H03H9/706 , Y10T29/42
摘要： A filter using an air gap type film bulk acoustic resonator is provided. The present filter includes a substrate on which a first port, a second port, and a ground port are formed to be connected to an external terminal; at least one first film bulk acoustic resonator serially connecting the first port to the second port on the substrate; at least one second film bulk acoustic resonator parallel connected to an interconnection node formed between the first port and the second port; and at least one inductor serially connecting the second film bulk acoustic resonator to the ground port. The inductor included in the filter is fabricated with the first and second film bulk acoustic resonators as one body. Accordingly, a small-sized filter may be fabricated through a simplified process.

6. 发明公开

EP1684420A3 Band filter using film bulk acoustic resonator and method of fabricating the same 审中-公开
标题翻译：与薄膜体声波谐振器和过程及其制备波段滤波器
公开(公告)号：EP1684420A3
公开(公告)日：2007-10-10
申请号：EP06001244.0
申请日：2006-01-20
申请人： Samsung Electronics Co., Ltd.
发明人： Hong, Seog-woo , Ha, Byeoung-ju , Song, In-sang , Kim, Kyu-sik
IPC分类号： H03H3/02 , H03H9/02 , H03H9/58 , B81C1/00
CPC分类号： H03H3/02 , H03H9/02047 , H03H9/588 , H03H2003/023
摘要： A band filter using a film bulk acoustic resonator and a method of fabricating the same. The method includes the steps of forming a membrane layer on a substrate, forming a plurality of resonators on an upper surface of the membrane layer, depositing a mask layer on a lower surface of the membrane layer and patterning the mask layer to form a plurality of main windows and sub windows, and forming cavities along the main windows in the substrate and forming sub walls in the cavities in such a way that the sub walls are separated apart from the membrane layer by using the notch effect caused during a dry etching. It is possible to precisely form cavities with desired sizes even if the cavities have different sizes, to reduce the notched areas in the cavities, to reduce the total size of the filter by decreasing a distance between the cavities and to reduce the total length of wires.

7. 发明公开

EP1657817A3 Monolithic rf filter 审中-公开
标题翻译：单片RF滤波器
公开(公告)号：EP1657817A3
公开(公告)日：2007-07-11
申请号：EP05024448.2
申请日：2005-11-09
申请人： Samsung Electronics Co., Ltd.
发明人： Park, Yun-kwon , Kim, Duck-hwan 505-803, Cheonggu Apt. , Nam, Kuang-woo Samsung Adv. Inst. of Technology , Song, In-sang , Yun, Seok-chul Samsung Adv. Inst. of Technology , Ha, Byeoung-ju , Kim, Jong-seok
IPC分类号： H03H9/58 , H03H9/02
CPC分类号： H03H9/0542 , H03H9/542 , H03H9/564 , H03H9/566
摘要： A filter formed of film bulk acoustic resonators (40,42,44,48,54,56,60) has a topology that enables a trimming inductor (58) to be fabricated on the same substrate as the resonator arrays. The entire filter can be fabricated on a single chip, utilizing only integrated circuit processes. In an exemplary embodiment, a pair of shunt resonators (54,56) each have one electrode connected to series-connected resonators. The other electrodes of the two shunt resonators are connected in common to one another. The trimming inductor (58) is connected between the common electrode and ground potential. A third shunt resonator (60) is connected between the series-connected resonators and ground potential.

8. 发明公开

EP1744172A1 Radar system having single circularly polarized antenna 审中-公开
标题翻译： Radizystem mit zirkularpolarisierter Einzelantenne
公开(公告)号：EP1744172A1
公开(公告)日：2007-01-17
申请号：EP06253463.1
申请日：2006-06-30
申请人： Samsung Electronics Co., Ltd.
发明人： Kwon, Sang-wook , Hong, Song-cheol , Song, In-sang , Kim, Dong-kyun , Kim, Jeong-geun
IPC分类号： G01S7/03
CPC分类号： H03D7/125 , G01S7/026 , G01S7/034 , H01Q9/0435 , H01Q21/24
摘要： A radar system includes a transmitter stage for generating a certain transmission signal; a circularly polarized antenna for emitting the transmission signal in a form of a circularly polarized signal, and receiving a reflection signal; a polarizer for isolating the reflection signal received from the circularly polarized antenna from the transmission signal, and outputting the reflection signal to a next stage; and a receiver stage for receiving the reflection signal output from the polarizer, converting the reflection signal into a signal of a certain frequency by using as a certain mixer switching signal the leakage signal leaking from the transmitter stage, and outputting the converted reflection signal. Therefore, the high-sensitivity radar system can be built in a compact size.
摘要翻译：雷达系统包括用于产生某一传输信号的发射机级; 圆极化天线，用于以圆偏振信号的形式发射发射信号，并接收反射信号; 偏振器，用于将从圆极化天线接收的反射信号与发射信号隔离，并将反射信号输出到下一级; 以及接收器级，用于接收从偏振器输出的反射信号，通过使用来自发射器级的泄漏信号作为特定的混频器切换信号将反射信号转换成特定频率的信号，并输出转换后的反射信号。因此，高灵敏度雷达系统可以建立在一个紧凑的尺寸。

9. 发明授权

EP1410911B1 Printer head using a radio frequency micro-electromechanical system (RF MEMS) sprayer 有权
标题翻译：打印头有用于喷射墨滴的射频微机电系统（RF MEMS）
公开(公告)号：EP1410911B1
公开(公告)日：2006-01-18
申请号：EP03256382.7
申请日：2003-10-09
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Song, In-sang
IPC分类号： B41J2/14 , B41J2/045
CPC分类号： B41J2/14008

10. 发明公开

EP1482638A3 Film bulk acoustic resonator having supports and manufacturing method therefor 有权转让
标题翻译： Akustischer Filmresonator mitStützenund Verfahren zur Herstellung desselben
公开(公告)号：EP1482638A3
公开(公告)日：2005-03-09
申请号：EP04252855.4
申请日：2004-05-17
申请人： Samsung Electronics Co., Ltd.
发明人： Song, II-jong , Song, In-sang , Kim, Duck-hwan , Park, Yun-kwon , Ha, yeoung-ju 507-1401 Samsung 5th Apartment
IPC分类号： H03H3/02
CPC分类号： H03H9/172 , H03H3/02 , H03H9/0514 , H03H9/0547 , Y10T29/42
摘要： A film bulk acoustic resonator (FBAR) has a support structure, a piezoelectric resonator, and a signal line that is electrically connected, e.g., through a via, to the piezoelectric resonator, all on a semiconductor substrate. Support(s) and/or the via mount the piezoelectric resonator at a predetermined distance from the semiconductor substrate, allowing an ideal shape of the resonator to be realized. The signal line may include a patterned inductor. A capacitor can be formed between the via and the signal line. The resonance characteristics can be enhanced since the substrate loss caused by the driving of the resonator can be prevented due to an air gap formed by the predetermined distance. The resonance frequency can be adjusted by altering the pattern of the inductor, the capacitance of the capacitor and/or the thickness of the piezoelectric layer, also allowing Impedance matching to be readily realized.
摘要翻译：薄膜体声波谐振器（FBAR）具有支撑结构，压电谐振器和信号线，其通过通孔电连接到压电谐振器，全部在半导体衬底上。支持和/或通孔将压电谐振器安装在离半导体衬底预定距离处，从而实现谐振器的理想形状。信号线可以包括图案化电感器。可以在通孔和信号线之间形成电容器。由于由于由预定距离形成的气隙可以防止由谐振器的驱动引起的衬底损耗，所以可以提高谐振特性。可以通过改变电感器的图案，电容器的电容和/或压电层的厚度来调节谐振频率，并且还可以容易地实现阻抗匹配。

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