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41. 发明公开

EP0180003A2 Bipolarer Leistungstransistor 失效
标题翻译： Bipolarer Leistung晶体管。
公开(公告)号：EP0180003A2
公开(公告)日：1986-05-07
申请号：EP85110971.0
申请日：1985-08-30
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Stoisiek, Michael, Dr. Dipl.-Phys.
IPC分类号： H01L29/08 , H01L29/72
CPC分类号： H01L29/7302 , H01L29/0692
摘要： Bipolarer vertikaler Leistungstransistor mit einem parallel zur Basis-Emitterstrecke liegenden Schaltungsteil zur Beeinflussung des Abschaltverhaltens, bei dem ein mit einem Kollektorkontakt (7) versehener Halbleiterkörper (1) eines ersten Leitfähigkeitstyps eine die Basis darstellende, mit einem Basiskontakt (4) versehene Zone (3) des zweiten Leitfähigkeitstyps enthält und bei dem in die Zone (3) wenigstens ein Emittergebiet (5) des ersten Leitfähigkeitstyps eingefügt ist, das mit einem Emitterkontakt (6) versehen ist Angestrebt wird eine schnelle Abschaltung des Leistungstransistors bei leistungsloser Ansteuerung. Erreicht wird das durch einen in den Halbleiterkörper monolithisch integrierten Feldeffekttransistor (T1), bestehend aus einem in die Zone (3) eingefügten Sourcegebiet des ersten Leitfähigkeitstyps, aus einem durch den Rand des Emittergebiets (5) gebildeten Draingebiet und aus dem Teil der Zone (3), der zwischen dem Emittergebiet (5) und dem Sourcegebiet (8) liegt und durch eine Gateelektrode (10) überdeckt wird. Die Gateelektrode (10) ist mit einem Steuereingang (11) für eine die Abschaltung bewirkende Steuerspannung (U a ) verbunden. Der Anwendungsbereich umfaßt bipolare Leistungshalbleiter.
摘要翻译：具有电路部分的垂直双极功率晶体管，其具有用于修改与基极 - 发射极并联的关断特性，其中设置有集电极触点（7）的第一导电类型的半导体主体（1）包含区域 3）表示基座并设置有基极触点（4），并且其中具有发射极触点（6）的至少一个具有发射极触点（6）的第一导电类型的发射极区域（5）插入该区域（3）。目的是通过无电源驱动器快速关断功率晶体管。这通过单体集成在半导体本体中并由插入到区域（3）中的第一导电类型的源极区域构成的场效应晶体管（T1）来实现，漏区域由发射极区域的边缘 5）和位于发射极区域（5）和源极区域（8）之间并由栅电极（10）覆盖的区域（3）的部分。栅电极（10）连接到用于实现关断的控制电压（Ua）的控制输入端（11）。应用领域包括双极功率半导体。

42. 发明公开

EP0146181A3 Semiconductor device comprising a combined bipolar-field effect transistor 失效
标题翻译：包含组合的双极场效应晶体管的半导体器件
公开(公告)号：EP0146181A3
公开(公告)日：1986-03-12
申请号：EP84201803
申请日：1984-12-05
申请人： N.V. Philips' Gloeilampenfabrieken
发明人： Singer, Barry Mana , Stupp, Edward Henry , Yayaraman, Rajsekhar
IPC分类号： H01L27/06 , H01L21/20 , H01L21/74 , H01L29/06
CPC分类号： H01L29/7816 , H01L21/74 , H01L27/0716 , H01L29/0619 , H01L29/0847 , H01L29/0878 , H01L29/1083 , H01L29/7302 , H01L29/7393
摘要： A combined bipolar-field effect transistor RESURF device includes a lightly-doped epitaxial buried layer (16) of a first conductivity type located between a semiconductor substrate (11) of the first conductivity type and an epitaxial surface layer (18) of a second conductivity type opposite to that of the first. The doping concentration and thickness of the epitaxial surface layer (18) are selected in accordance with the REduced SURface Field (RESURF) technique. A highly-doped buried layer (14) of the first conductivity type may be provided in the substrate (11) where it meets the lightly-doped epitaxial buried layer (16). A highly-doped buried region (19) of the second conductivity type may be located beneath the base region (20) of the device and sandwiched between the epitaxial buried layer (16) and the epitaxial surface layer (18). The advantages of such a device include a substantially reduced «on» resistance, a more compact and flexible configuration, improved switching characteristics, reduced base device current requirements, and improved isolation. The device may be further improved by providing a buried annular region (21) of the first conductivity type around and in contact with said buried region (19), and a surface adjoining annular region (23) of the first conductivity may be provided adjacent the base region (20).

43. 发明授权

EP0045447B1 Transistoranordnung mit hoher Kollektor-Emitter-Durchbruchsspannung 有权
标题翻译：具有高收集器发射极断开电压的晶体管
公开(公告)号：EP0045447B1
公开(公告)日：1985-11-21
申请号：EP81105803.1
申请日：1981-07-22
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Werner, Wolfgang, Dr.
IPC分类号： H01L29/72 , H01L29/06
CPC分类号： H01L29/0821 , H01L21/74 , H01L29/7302 , H01L29/808

44. 发明公开

EP0084558A1 MONOLITHICALLY MERGED FIELD EFFECT TRANSISTOR AND BIPOLAR JUNCTION TRANSISTOR 失效
标题翻译： MIXED单片构造场效应晶体管和双极晶体管。
公开(公告)号：EP0084558A1
公开(公告)日：1983-08-03
申请号：EP82902605.0
申请日：1982-07-20
申请人： INTERSIL, INC.
发明人： ZOMMER, Nathan
IPC分类号： H01L21 , H01L27 , H01L29 , H03K19
CPC分类号： H03K19/09448 , H01L27/0716 , H01L29/7302 , H01L29/7322 , H01L29/7395
摘要： Dispositif semiconducteur comprenant un transistor à effet de champ et un transistor à jonction bipolaire fusionnés monolithiquement. Le dispositif possède une région semiconductrice (28a) avec un contact de base (13) et une électrode de porte (15), de sorte qu'un signal appliqué au contact de base (13) fait fonctionner le dispositif comme un transistor à jonction bipolaire, tandis qu'un signal appliqué à l'électrode de porte (15) fait fonctionner le dispositif comme un transistor à effet de champ. De cette manière, le mode de fonctionnement peut être choisi de manière à obtenir les caractéristiques de fonctionnement désirées.

45. 发明公开

EP4420166A1 DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SENSOR 审中-实审
公开(公告)号：EP4420166A1
公开(公告)日：2024-08-28
申请号：EP22797741.0
申请日：2022-09-29
申请人： International Business Machines Corporation
发明人： HEKMATSHOARTABARI, Bahman , REZNICEK, Alexander , NING, Tak
IPC分类号： H01L27/082 , H03F3/00 , G01N27/414 , H01L29/00
CPC分类号： H01L27/0821 , G01N27/414 , G01N27/4145 , H01L27/0688 , H01L29/735 , H01L29/732 , H01L29/7302 , H01L29/41708 , H01L29/0808 , H01L29/0821 , H01L29/1004 , H03F3/3437 , H03F2200/9620130101

46. 发明公开

EP4404272A1 HEATER TERMINAL CONTACTS 审中-公开
公开(公告)号：EP4404272A1
公开(公告)日：2024-07-24
申请号：EP23202560.1
申请日：2023-10-10
申请人： GlobalFoundries U.S. Inc.
发明人： RAGHUNATHAN, Uppili S. , JAIN, Vibhor , NGU, Yves T. , KANTAROVSKY, Johnatan A. , VENTRONE, Sebastian T.
IPC分类号： H01L29/737 , H01L29/73 , H01L21/8226 , H01L23/34 , H01L29/08 , H01L29/417 , H01L21/331
CPC分类号： H01L29/0821 , H01L29/7302 , H01L29/7371 , H01L29/66242 , H01L29/41708 , H01L27/067 , H01L21/764 , H01L21/76224 , H01L29/0642
摘要： The present disclosure relates to semiconductor structures and, more particularly, to heater terminal contacts, methods of operation and methods of manufacture. The structure includes: a heterojunction bipolar transistor having a collector, sub-collector region, emitter and base region; and heater terminal contacts electrically coupled to the sub-collector region.

47. 发明公开

EP3186888A4 CIRCUITS, METHODS, AND SYSTEMS WITH OPTIMIZED OPERATION OF DOUBLE-BASE BIPOLAR JUNCTION TRANSISTORS 有权
公开(公告)号：EP3186888A4
公开(公告)日：2018-01-17
申请号：EP15857050
申请日：2015-11-06
申请人： IDEAL POWER INC
发明人： ALEXANDER WILLIAM C
IPC分类号： H03K17/66 , H02M3/158 , H03K17/687
CPC分类号： H03K17/66 , H01L27/0694 , H01L29/0804 , H01L29/0821 , H01L29/1004 , H01L29/1095 , H01L29/7302 , H01L29/732 , H01L29/735 , H01L29/7412 , H01L29/7416 , H01L29/747 , H01L29/872 , H02M1/08 , H02M7/219 , H02M2007/2195 , H03K17/60 , H03K17/602 , H03K17/687 , H03K2217/0054
摘要： The present application teaches, among other innovations, methods and circuits for operating a B-TRAN (double-base bidirectional bipolar junction transistor). A base drive circuit is described which provides high-impedance drive to the base contact region on whichever side of the device is operating as the collector (at a given moment). (The B-TRAN, unlike other bipolar junction transistors, is controlled by applied voltage rather than applied current.) The preferred implementation of the drive circuit is operated by control signals to provide diode-mode turn-on and pre-turnoff operation, as well as a hard ON state with a low voltage drop (the “transistor-ON” state). In some but not necessarily all preferred embodiments, an adjustable low voltage for the gate drive circuit is provided by a self-synchronizing rectifier circuit. Also, in some but not necessarily all preferred embodiments, the base drive voltage used to drive the c-base region (on the collector side) is varied while the base current at that terminal is monitored, so that no more base current than necessary is applied. This solves the difficult challenge of optimizing base drive in a B-TRAN.

48. 发明授权

EP1443649B1 Emitter switching configuration and corresponding integrated structure 有权
标题翻译：发射器的开关配置和对应的一体化结构
公开(公告)号：EP1443649B1
公开(公告)日：2008-08-13
申请号：EP03425056.3
申请日：2003-01-31
申请人： STMicroelectronics S.r.l.
发明人： Ronsisvalle, Cesare
IPC分类号： H03K17/567
CPC分类号： H03K17/567 , H01L29/7302 , H01L29/739 , H01L29/7803 , H01L29/7808 , H03K17/04166 , H03K17/08142

49. 发明公开

EP1211733A4 SEMICONDUCTOR DEVICE 审中-公开
标题翻译： HALBLEITERBAUELEMENT
公开(公告)号：EP1211733A4
公开(公告)日：2007-01-17
申请号：EP00956947
申请日：2000-09-06
申请人： ROHM CO LTD
发明人： SAKAMOTO KAZUHISA
IPC分类号： H01L29/73 , H01L21/331 , H01L29/08 , H01L29/10 , H01L29/417 , H01L29/47 , H01L29/732 , H01L29/74 , H01L29/872
CPC分类号： H01L29/7322 , H01L24/05 , H01L29/0804 , H01L29/1004 , H01L29/7302 , H01L2224/02166 , H01L2924/12032 , H01L2924/12036 , H01L2924/00
摘要： A semiconductor device protected from power breakdown. The semiconductor device includes a base electrode connected to a base region in a base contact region defined on the surface of the base region. An n-type region of the same conduction type as an emitter region surrounds the base contact region under the border of the base contact region. Specifically, the p-type base region and the n-type region form a p-n diode under the border of the base contact region.
摘要翻译：半导体器件免受电源故障。该半导体器件包括在基极区域的表面上限定的基极接触区域中连接到基极区域的基极。与发射极区域相同导电类型的n型区域在基极接触区域的边界下围绕基极接触区域。具体而言，p型基极区域和n型区域在基极接触区域的边界下方形成p-n二极管。

50. 发明公开

EP1671373A1 HYBRID BIPOLAR-MOS TRENCH GATE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：与沟槽栅混合式双极MOS功率半导体装置
公开(公告)号：EP1671373A1
公开(公告)日：2006-06-21
申请号：EP04770100.8
申请日：2004-09-27
申请人： Koninklijke Philips Electronics N.V.
发明人： LETAVIC, Theodore
IPC分类号： H01L29/739 , H01L27/07 , H01L29/78 , H01L29/732
CPC分类号： H01L29/7813 , H01L21/76895 , H01L27/0705 , H01L27/0716 , H01L29/42368 , H01L29/7302 , H01L29/739 , H01L29/7803
摘要： An improved MOS device is disclosed that utilizes a voltage configuration shorting the body and the gate, and independently biasing the source. As a result, the device functions as a trench MOS device with an NPN bipolar transistor in parallel therewith, permitting a smaller size device to perform the DC-DC conversion only previously possible with conventional unipolar devices.

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