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31. 发明授权

EP1274647B1 MIKROMECHANISCHES BAUELEMENT UND ENTSPRECHENDES HERSTELLUNGSVERFAHREN 有权
标题翻译：微机械结构及相应方法
公开(公告)号：EP1274647B1
公开(公告)日：2014-01-08
申请号：EP01929254.9
申请日：2001-03-22
申请人： ROBERT BOSCH GMBH
发明人： OFFENBERG, Michael , LUTZ, Markus
IPC分类号： B81C1/00
CPC分类号： B81C1/00246 , B81C2203/0735

32. 发明公开

EP2277823A3 Method for forming MEMS devices having low contact resistance and devices obtained thereof 审中-公开
标题翻译：一种用于与低接触电阻的MEMS器件和由此获得的器件的形成过程
公开(公告)号：EP2277823A3
公开(公告)日：2013-09-11
申请号：EP10075263.3
申请日：2010-06-18
申请人： IMEC , Katholieke Universiteit Leuven, K.U. Leuven R&D
发明人： Jain, Ajay , Severi, Simone , Claes, Gert , Heck, John
IPC分类号： B81C1/00
CPC分类号： B81C1/00246 , B81B2203/0118 , B81B2207/015 , B81B2207/07 , B81C2203/0714 , B81C2203/0735
摘要： The present disclosure proposes a method for manufacturing in a MEMS device a low-resistance contact between a silicon-germanium layer and a layer contacted by this silicon-germanium layer, such as a CMOS metal layer or another silicon-germanium layer, through an opening in a dielectric layer stack separating both layers. An interlayer is formed in this opening, thereby covering at least the sidewalls of the opening on the exposed surface of the another layer at the bottom of this opening. This interlayer may comprise a TiN layer in contact with the silicon-germanium layer. This interlayer can further comprise a Ti layer in between the TiN layer and the layer to be contacted. In another embodiment this interlayer comprises a TaN layer in contact with the silicon-germanium layer. This interlayer can then further comprise a Ta layer in between the TaN layer and the layer to be contacted.

33. 发明公开

EP2554510A2 A method of making a microfluidic device 失效转让
标题翻译： Verfahren zum Herstellen einer mikrofluidischen Vorrichtung
公开(公告)号：EP2554510A2
公开(公告)日：2013-02-06
申请号：EP12177755.1
申请日：2012-07-25
申请人： Teledyne Dalsa Semiconductor Inc.
发明人： Johnstone, Robert , Martel, Stéphane
IPC分类号： B81C1/00
CPC分类号： B81C1/00182 , B81B2201/054 , B81C2201/019 , B81C2203/0735
摘要： A microfabricated device is fabricated by depositing a first metal layer on a substrate to provide a first electrode of an electrostatic actuator, depositing a first structural polymer layer over the first metal layer, depositing a second metal layer over said first structural polymer layer to form a second electrode of the electrostatic actuator, depositing an insulating layer over said first structural polymer layer, planarizing the insulating layer, etching the first structural polymer layer through the insulating layer and the second metal layer to undercut the second metal layer, providing additional pre-formed structural polymer layers, at least one of which has been previously patterned, and finally bonding the additional structural layers in the form of a stack over the planarized second insulating layer to one or more microfluidic channels. The technique can also be used to make cross over channels in devices without electrostatic actuators, in which case the metal layers can be omitted.
摘要翻译：通过在衬底上沉积第一金属层以提供静电致动器的第一电极，在第一金属层上方沉积第一结构聚合物层，在第一结构聚合物层上方沉积第二金属层以形成微结构聚合物层静电致动器的第二电极，在所述第一结构聚合物层上沉积绝缘层，平坦化绝缘层，通过绝缘层和第二金属层蚀刻第一结构聚合物层以切割第二金属层，提供额外的预形成结构聚合物层，其中至少一个已经被预先图案化，并且最后将平坦化的第二绝缘层上的堆叠形式的附加结构层结合到一个或多个微流体通道。该技术还可以用于在没有静电致动器的装置中跨越通道，在这种情况下可以省略金属层。

34. 发明公开

EP2461159A1 Method of fabricating sensors having functionalized resonating beams 有权
标题翻译： Verfahren zur Herstellung von funktionalisierten，resonanceen Cantilever-Sensoren
公开(公告)号：EP2461159A1
公开(公告)日：2012-06-06
申请号：EP10193535.1
申请日：2010-12-02
申请人： Honeywell Romania S.R.L.
发明人： Cobianu, Cornel. P.
IPC分类号： G01N29/02 , G01N29/22 , B01L3/00 , G01N33/00 , H03H9/24 , B81C1/00
CPC分类号： G01N29/022 , B01L3/502707 , B81B2201/0214 , B81B2203/0118 , B81B2207/015 , B81C1/00214 , B81C2201/0185 , B81C2203/0118 , B81C2203/0714 , B81C2203/0735 , B82Y40/00 , G01N29/036 , G01N29/222 , G01N2291/021 , G01N2291/0255 , G01N2291/0256 , G01N2291/0427
摘要： A carbon dioxide sensor comprising a first beam that includes a functionalized surface and a second beam that includes a functionalized surface such that reduced-drift differential sensing of carbon dioxide may be performed by monitoring changes in the resonant frequency of the first beam relative to the resonant frequency of second beam.
摘要翻译：一种二氧化碳传感器，其包括包括官能化表面的第一光束和包括功能化表面的第二光束，使得可以通过监测第一光束相对于谐振的谐振频率的变化来执行二氧化碳的减少漂移差分感测第二光束的频率。

35. 发明授权

EP1452481B1 Fabrication of advanced silicon-based MEMS devices 有权
标题翻译：改进的基于硅的MEMS器件的制造
公开(公告)号：EP1452481B1
公开(公告)日：2007-12-19
申请号：EP04100440.9
申请日：2004-02-05
申请人： Dalsa Semiconductor Inc.
发明人： Ouelett, Luc , Antaki, Robert
IPC分类号： B81B7/00 , B81C5/00 , B81B3/00 , B81B7/02
CPC分类号： B81C1/00246 , B81C1/00666 , B81C2201/0164 , B81C2201/0167 , B81C2201/0169 , B81C2203/0735

36. 发明公开

EP1173893A4 POLYCRYSTALLINE SILICON GERMANIUM FILMS FOR FORMING MICRO-ELECTROMECHANICAL SYSTEMS 审中-公开
标题翻译：多晶硅化锗薄膜用于生产微型电化学系统
公开(公告)号：EP1173893A4
公开(公告)日：2007-08-01
申请号：EP00911583
申请日：2000-01-14
申请人： UNIV CALIFORNIA
发明人： FRANKE ANDREA , HOWE ROGER T , KING TSU-JAE
IPC分类号： B81C1/00 , B81B3/00 , H01L21/3205 , H01L21/8238 , H01L23/52 , H01L27/092 , H03H9/24 , H01L31/0312 , C25D5/02 , H01L29/73
CPC分类号： B81C1/00246 , B81B2203/0118 , B81C2201/0109 , B81C2203/0735 , Y10S438/933
摘要： This invention relates to micro-electromechanical systems using silicon-germanium films. The invention features a process for forming a micro-electromechanical system on a substrate. This process includes depositing a sacrificial layer of silicon-germanium onto the substrate; depositing a structural layer of silicon-germanium onto the sacrificial layer, where the germanium content of the sacrificial layer is greater than the germanium content of the structural layer; and removing a portion of the sacrificial layer. A MEMS resonator (105) as seen in figure 1B can be produced by the present invention.

38. 发明公开

EP1339101A3 Systems and methods for integration of heterogeneous circuit devices 审中-公开
标题翻译：异构电路器件的集成的系统和方法
公开(公告)号：EP1339101A3
公开(公告)日：2005-11-30
申请号：EP03003955.6
申请日：2003-02-21
申请人： Xerox Corporation
发明人： Chen, Jingkuang , Su, Yi
IPC分类号： H01L21/8238 , H01L27/092
CPC分类号： B81C1/00246 , B81B2201/047 , B81C2203/0735 , H01L21/823493 , H01L21/823892 , H01L21/84 , H01L27/0617 , H01L27/1203
摘要： A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heterogeneous device may further comprise at least one microelectromechanical system-based element and/or at least one photodiode. In embodiments, the heterogeneous circuit devices comprise at least one CMOS transistor and at least one DMOS transistor. In embodiments, the substrate comprises a layer of silicon or a layer of p-type silicon. In other embodiments, the substrate comprises a silicon-on-insulator wafer comprising a single-crystal-silicon layer or a single-crystal-P-silicon layer, a substrate and an insulator layer therebetween.

39. 发明公开

EP1594800A2 METHOD OF MANUFACTURING AN ELECTRONIC DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：制造电子器件和电子器件的方法
公开(公告)号：EP1594800A2
公开(公告)日：2005-11-16
申请号：EP04709673.0
申请日：2004-02-10
申请人： Koninklijke Philips Electronics N.V.
发明人： BOEZEN, Hendrik , DEN HARTOG, Sander, G. , FRENCH, Patrick, J. , MAKINWA, Kofi, A., A.
IPC分类号： B81C1/00 , G01P15/08
CPC分类号： G01P15/125 , B81B2201/0235 , B81B2203/033 , B81C1/00484 , B81C2201/0132 , B81C2203/0735 , G01P15/0802
摘要： A method of manufacturing an electronic device, particularly an acceleration sensor, comprising providing a wafer (10) having first and second semiconductor layers (12,16) with a buried oxide layer (14) therebetween and forming a semiconductor device (such as a detection circuit) on one side of the wafer (10) in the first semiconductor layer (16) and a micro-electromechanical systems (MEMS) device on the opposite side of the wafer (10) in the second semi-conductor layer (12).
摘要翻译：一种制造电子器件，特别是加速度传感器的方法，包括提供具有第一和第二半导体层（12,16）的晶片（10），其间具有掩埋氧化物层（14），并形成半导体器件（诸如检测器（12）中晶片（10）的一侧上的微电子机械系统（MEMS）器件和位于第二半导体层（12）中的晶片（10）的相对侧上的微机电系统（MEMS）器件。

40. 发明公开

EP1452481A3 Fabrication of advanced silicon-based MEMS devices 有权
标题翻译：改进的基于硅的MEMS器件的制造
公开(公告)号：EP1452481A3
公开(公告)日：2005-10-12
申请号：EP04100440.9
申请日：2004-02-05
申请人： Dalsa Semiconductor Inc.
发明人： Ouelett, Luc , Antaki, Robert
IPC分类号： B81B7/00 , B81C5/00 , B81B3/00 , B81B7/02
CPC分类号： B81C1/00246 , B81C1/00666 , B81C2201/0164 , B81C2201/0167 , B81C2201/0169 , B81C2203/0735
摘要： A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.

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