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    • 2. 发明公开
    • A photodiode
    • 光电二极管
    • EP2175497A3
    • 2017-12-27
    • EP09162426.2
    • 2009-06-10
    • Ascatron AB
    • BAKOWSKI, Mietek
    • H01L31/107H01L31/108H01L31/0304H01L31/0312H01L31/0352H01L31/0224H01L27/144
    • An avalanche photodiode for detecting ultraviolet photons comprises a first semiconductor layer (1) and a low doped second semiconductor layer (2) on top thereof. These layers are of SiC or Al x Ga 1-x N, in which 0 ≤ x ≤ 0.5, and x may be different for these layers of the diode. A voltage close to the breakdown voltage of the diode being intended to be applied across electrodes (6, 7) of the diode in operation thereof for creating an active region of a high electric field for avalanche multiplication of charge carriers created by said photons in said second layer. A fourth layer (9) is arranged above the second layer laterally outside a surface (4) of the diode being configured to be exposed to photons to be detected, with the second (7) of said electrodes arranged on top thereof. The thickness of the fourth layer (9) and the doping concentration thereof are adapted to obtain an effective surface charge density of said fourth layer in a region laterally next to said surface obtaining an electric field strength substantially equal to a critical electric field strength of the diode at a pn-junction formed below said fourth layer laterally to said surface upon application of a said voltage across said electrodes.
    • 用于检测紫外光子的雪崩光电二极管包括在其顶部上的第一半导体层(1)和低掺杂第二半导体层(2)。 这些层是SiC或AlxGa1-xN,其中0≤x≤0.5,并且对于二极管的这些层,x可以不同。 接近二极管的击穿电压的电压预期施加在二极管的电极(6,7)的工作中,以产生高电场的有源区,用于由所述光子产生的电荷载流子的雪崩倍增 第二层。 第二层(9)布置在第二层的横向外侧的二极管的表面(4)之外,所述第二层被配置成暴露于待检测的光子,其中第二电极(7)布置在其顶部。 第四层(9)的厚度及其掺杂浓度适于获得所述第四层在横向紧邻所述表面的区域中的有效表面电荷密度,从而获得基本上等于所述第四层(9)的临界电场强度的电场强度 当在所述电极上施加所述电压时,在所述第四层下方形成的pn结处的二极管横向于所述表面。