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31. 发明授权

EP0253597B1 A semiconductor laser device 失效
公开(公告)号：EP0253597B1
公开(公告)日：1994-05-18
申请号：EP87306151.9
申请日：1987-07-10
申请人： SHARP KABUSHIKI KAISHA
发明人： Takiguchi, Haruhisa , Kaneiwa, Shinji , Kudo, Hiroaki , Yoshida, Toshihiko
IPC分类号： H01S3/06 , H01S3/19 , H01S3/085
CPC分类号： H01S5/12 , H01S5/2004 , H01S5/321

32. 发明公开

EP0526128A3 A method for producing a distributed feedback semiconductor laser device 失效
标题翻译：一种生产分布式反馈半导体激光器件的方法
公开(公告)号：EP0526128A3
公开(公告)日：1993-03-17
申请号：EP92306802.7
申请日：1992-07-24
申请人： SHARP KABUSHIKI KAISHA
发明人： Inoguchi, Kazuhiko , Sugahara, Satoshi , Taneya, Mototaka , Kudo, Hiroaki , Nakanishi, Chitose , Takiguchi, Haruhisa
IPC分类号： H01L33/00 , H01S3/085 , H01S3/06
CPC分类号： H01S5/12 , H01S5/1231 , H01S5/2231
摘要： In a first crystal growth step, a first cladding layer (11), an active layer (12), and an optical waveguide layer (14) are sequentially grown on a semiconductor substrate (10). A diffraction grating (21) is formed at a surface of the optical waveguide layer. In a second crystal growth step, a current block layer (17) is grown on the optical waveguide layer having the diffraction grating. The current block layer is selectively etched to expose the diffraction grating and thus to form a stripe groove. In a third crystal growth step, a second cladding layer (19) is grown on the diffraction grating inside the stripe groove and on the current block layer.

33. 发明公开

EP0356135A2 A semiconductor laser device 失效
标题翻译： Halbleiterlaser。
公开(公告)号：EP0356135A2
公开(公告)日：1990-02-28
申请号：EP89308335.2
申请日：1989-08-16
申请人： SHARP KABUSHIKI KAISHA
发明人： Kudo, Hiroaki , Takiguchi, Haruhisa , Sakane, Chitose , Sugahara, Satoshi
IPC分类号： H01S3/06 , H01S3/19
CPC分类号： H01S5/12 , H01S5/24
摘要： A semiconductor laser device with a resonator containing an active region for laser oscillating operation is disclosed which comprises a third-order diffraction grating with a periodic corrugation for producing feedback of laser light, the corrugation being of substantially rectangular shape, wherein the ratio of the width of each convex portion of the corrugation to the periodicity of the corrugation is in the range of 0.20 to 0.25, 0.40 to 0.60, or 0.70 to 0.95.
摘要翻译：公开了一种具有包含用于激光振荡操作的有源区域的谐振器的半导体激光器件，其包括具有用于产生激光反馈的周期性波纹的三阶衍射光栅，该波纹为大致矩形形状，其中，宽度波纹的每个凸起部分与波纹的周期性在0.20至0.25,0.40至0.60或0.70至0.95的范围内。

34. 发明公开

EP0263690A2 A distributed feedback semiconductor laser device 失效
标题翻译： Halbleiterlaservorrichtung mit verteilterRückkopplung。
公开(公告)号：EP0263690A2
公开(公告)日：1988-04-13
申请号：EP87308877.7
申请日：1987-10-07
申请人： SHARP KABUSHIKI KAISHA
发明人： Yoshida, Toshihiko , Takiguchi, Haruhisa , Kaneiwa, Shinji , Kudo, Hiroaki
IPC分类号： H01S3/06 , H01S3/08 , H01S3/19
CPC分类号： H01S5/12 , H01S5/1082 , H01S5/4031
摘要： A distributed feedback semiconductor laser device comprising a laser oscillation region and a distributed reflector which are provided in a laminated crystal structure, and comprising facets at both the ends, wherein a light emitting face (10) is disposed at one or both ends of the laser oscillation region, the face (10) being parallel to the lamination direction and intersecting with the light emitting direction at an angle which is 90 degrees minus the Brewster angle.
摘要翻译：一种分布式反馈半导体激光器件，包括激光振荡区域和分布式反射器，其设置在层压晶体结构中，并且包括在两端的刻面，其中发光面（10）设置在激光器的一端或两端振荡区域，所述面（10）平行于层叠方向，并以90度减去布鲁斯特角的角度与发光方向相交。

35. 发明授权

EP0259860B1 Integrated optic disc pickup 失效
标题翻译：集成扫描仪光盘。
公开(公告)号：EP0259860B1
公开(公告)日：1993-12-01
申请号：EP87113191.8
申请日：1987-09-09
申请人： SHARP KABUSHIKI KAISHA
发明人： Yano, Seiki , Kudo, Hiroaki , Takiguchi, Haruhisa , Hijikata, Toshiki , Kaneiwa, Shinji
IPC分类号： G11B7/12 , G11B7/09
CPC分类号： G11B7/1384 , G11B7/0912 , G11B7/124

36. 发明授权

EP0275209B1 A semi conductor laser device 失效
标题翻译：的半导体激光装置。
公开(公告)号：EP0275209B1
公开(公告)日：1993-10-27
申请号：EP88300330.3
申请日：1988-01-15
申请人： SHARP KABUSHIKI KAISHA
发明人： Takiguchi, Haruhisa , Kaneiwa, Shinji , Kudo, Hiroaki , Sakane, Chitose , Yoshida, Toshihiko
IPC分类号： H01S3/19
CPC分类号： H01S5/2231 , H01S5/0421 , H01S5/2206 , H01S5/3211 , H01S5/32316 , H01S5/32391

37. 发明公开

EP0525971A3 A semiconductor device and a method for producing the same 失效
标题翻译：一种半导体器件及其制造方法
公开(公告)号：EP0525971A3
公开(公告)日：1993-02-24
申请号：EP92305782.2
申请日：1992-06-24
申请人： SHARP KABUSHIKI KAISHA
发明人： Kudo, Hiroaki , Inoguchi, Kazuhiko , Sugahara, Satoshi , Takiguchi, Haruhisa
IPC分类号： H01L33/00 , H01S3/19 , H01S3/085 , H01L29/76
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/20 , H01S5/026 , H01S5/1228 , H01S5/1231 , H01S5/223 , H01S5/32 , H01S5/32308 , H01S5/327 , H01S5/341 , H01S5/3412 , H01S5/3428 , H01S5/343 , H01S5/3432
摘要： A semiconductor device includes a multiple layer structure including a substantially flat active layer (103), and a first semiconductor layer (101) and a second semiconductor layer (102) adjacent to each other, the semiconductor layers (101,102) having a corrugation (106) at an interface therebetween; and a generating device which is connected to the multiple layer structure. An electromagnetic field intensity distribution is generated by use of the generating device in a waveguide region including the active layers (103), and the active layer (103) includes a gain distribution having a distribution pattern corresponding to the corrugation. The multiple layer structure is produced by forming the corrugation (106) on an upper surface of the first semiconductor layer (101), and forming the rest of the multiple layer structure including the second semiconductor layer (102) and the active layer (103) by using a vapor phase growth method once so as to make the active layer substantially flat. Then, the generating device is formed to be in contact with the multiple layer structure.
摘要翻译：一种半导体器件包括多层结构，该多层结构包括基本平坦的有源层（103）以及彼此相邻的第一半导体层（101）和第二半导体层（102），半导体层（101,102）具有波纹）在它们之间的界面处; 以及连接到多层结构的发电装置。通过在包括有源层（103）的波导区域中使用生成装置来生成电磁场强度分布，并且有源层（103）包括具有与波纹对应的分布模式的增益分布。通过在第一半导体层（101）的上表面上形成波纹（106）并且形成包括第二半导体层（102）和有源层（103）的多层结构的其余部分来产生多层结构，通过一次使用气相生长法以使活性层基本平坦。然后，发生装置形成为与多层结构接触。

38. 发明公开

EP0475714A2 A distributed feedback semiconductor laser device and a method of producing the same 失效
标题翻译：一种半导体激光器及其制备分布反馈和过程。
公开(公告)号：EP0475714A2
公开(公告)日：1992-03-18
申请号：EP91308232.7
申请日：1991-09-10
申请人： SHARP KABUSHIKI KAISHA
发明人： Kudo, Hiroaki , Takiguchi, Haruhisa , Inoguchi, Kazuhiko , Nakanishi, Chitose , Sugahara, Satoshi
IPC分类号： H01S3/085 , H01L33/00
CPC分类号： H01S5/12 , H01S5/1228 , H01S5/20 , H01S5/2231
摘要： A distributed feedback semiconductor laser device comprising a current blocking structure having a stripe groove (15), and a diffraction grating (14) formed in the bottom of the stripe groove (15). The current blocking structure is formed over an active layer (3) for laser oscillation, and it includes an etch stop layer (8) against a groove etching in a lower potion of the current blocking structure. The refractive index distribution in transverse directions inside the stripe groove (15) is controlled by the thickness of the optical guiding layer (5), enabling oscillation of the fundamental transerse mode.
摘要翻译：分布式反馈半导体激光装置，其包括具有条纹槽的电流阻挡结构，和一衍射光栅形成在所述条带沟槽的底部。电流阻挡结构形成在用于激光振荡的活性层，它包括在对一个槽在所述电流阻挡结构的下药水蚀刻蚀刻停止层。条形槽内部在横向方向上的折射率分布由光导层的厚度来控制，从而使基本模式transerse的振荡。

39. 发明公开

EP0368578A3 A semiconductor laser device 失效
标题翻译：半导体激光装置
公开(公告)号：EP0368578A3
公开(公告)日：1990-11-28
申请号：EP89311438.9
申请日：1989-11-06
申请人： SHARP KABUSHIKI KAISHA
发明人： Takiguchi Haruhisa , Kudo, Hiroaki , Sakane, Chitose , Sugahara, Satoshi
IPC分类号： H01S3/085 , H01S3/19
CPC分类号： H01S5/323 , H01S5/12 , H01S5/32308 , H01S5/32325 , H01S5/32333
摘要： A semiconductor laser device is disclosed which comprises an active layer (3) positioned between a first cladding layer (2) and a second cladding layer (5), the active layer (3) being made of a compound semiconductor material selected from the group consisting of (Al x Ga 1-x ) 0.5 In 0.5 P (0≦x≦0.7), Al x Ga 1-x As (0≦x≦0.4), and Ga x In 1-x P 1-y As y (0.5≦x≦1, 0≦y≦1, and y=2x-1), wherein an optical guiding layer (4) having a diffraction grating made of (Al x Ga 1-x ) 0.5 In 0.5 P (0≦x≦1) is positioned between the active layer (3) and one of the cladding layers (2, 5).
摘要翻译：公开了一种半导体激光装置，其包括位于第一覆层（2）和第二覆层（5）之间的有源层（3），有源层（3）由化合物半导体材料制成，该材料选自（Al x Ga 1-x）0.5 In 0.5 P（0≤x≤0.7），Al x Ga 1-x As（0≤x≤0.4）和GaxIn 1-x P 1-y As y（0.5≤x≤1,0≤y≤1，y 其中具有由（AlxGa1-x）0.5In0.5P（0≤x≤1）制成的衍射光栅的光学引导层（4）位于有源层（3）与包层之一之间层（2,5）。

40. 发明公开

EP0368578A2 A semiconductor laser device 失效
标题翻译： Halbleiterlaservorrichtung。
公开(公告)号：EP0368578A2
公开(公告)日：1990-05-16
申请号：EP89311438.9
申请日：1989-11-06
申请人： SHARP KABUSHIKI KAISHA
发明人： Takiguchi Haruhisa , Kudo, Hiroaki , Sakane, Chitose , Sugahara, Satoshi
IPC分类号： H01S3/085 , H01S3/19
CPC分类号： H01S5/323 , H01S5/12 , H01S5/32308 , H01S5/32325 , H01S5/32333
摘要： A semiconductor laser device is disclosed which comprises an active layer (3) positioned between a first cladding layer (2) and a second cladding layer (5), the active layer (3) being made of a compound semiconductor material selected from the group consisting of (Al x Ga 1-x ) 0.5 In 0.5 P (0≦x≦0.7), Al x Ga 1-x As (0≦x≦0.4), and Ga x In 1-x P 1-y As y (0.5≦x≦1, 0≦y≦1, and y=2x-1), wherein an optical guiding layer (4) having a diffraction grating made of (Al x Ga 1-x ) 0.5 In 0.5 P (0≦x≦1) is positioned between the active layer (3) and one of the cladding layers (2, 5).
摘要翻译：公开了一种半导体激光器件，其包括位于第一覆层（2）和第二覆层（5）之间的有源层（3），所述有源层（3）由选自以下的化合物半导体材料制成：的（Al x Ga 1-x）0.5 In 0.5 P（0≤x≤0.7），Al x Ga 1-x As（0≤x≤0.4）和GaxIn1-xP1-yAsy（0.5 < 其中具有衍射光栅的光导层（4）由（Al x Ga 1-x）0.5 In 0.5 P（0≤x≤1）构成， x 1）位于有源层（3）和一个包覆层（2,5）之间。

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