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21. 发明公开

EP2904671A4 SYSTEMS AND METHODS FOR AMPLIFYING LIGHT 有权
标题翻译：系统和方法来提高光
公开(公告)号：EP2904671A4
公开(公告)日：2016-07-13
申请号：EP13844454
申请日：2013-10-04
申请人： WELFORD DAVID
发明人： WELFORD DAVID
IPC分类号： H01S5/06 , G01N21/47 , H01S5/022 , H01S5/028 , H01S5/50
CPC分类号： H01S5/0287 , G01N21/4795 , H01S5/02216 , H01S5/0288 , H01S5/50 , H01S2301/02

22. 发明公开

EP2757597A3 Light emitting device, super luminescent diode, and projector 有权
标题翻译：一种发光装置，所述超辐射发光二极管和投影
公开(公告)号：EP2757597A3
公开(公告)日：2016-01-27
申请号：EP14151565.0
申请日：2014-01-17
申请人： Seiko Epson Corporation
发明人： Mochizuki, Masamitsu , Nagawa, Michifumi
IPC分类号： H01L33/00 , H01S5/02 , H01S5/028 , H01S5/10
CPC分类号： G03B21/2033 , B82Y20/00 , G03B21/2066 , H01L33/0045 , H01L33/10 , H01S5/0203 , H01S5/028 , H01S5/1003 , H01S5/101 , H01S5/1071 , H01S5/162 , H01S5/34326
摘要： A light emitting device includes: an active layer; and a first cladding layer and a second layer that sandwich the active layer, wherein the active layer forms an optical waveguide that guides light, a traveling direction of the light guided in the optical waveguide changes at a first reflection part provided on a first side surface of the active layer, and the first reflection part is located outside of a region in which the first layer and the second cladding layer are provided in a plan view.

23. 发明公开

EP2320257A3 Anti-reflection coated quantum dot resonator for wavelength division multiplexing optical communication 审中-公开
标题翻译：量子点谐振器与光波长复用通信的防反射涂层
公开(公告)号：EP2320257A3
公开(公告)日：2015-09-16
申请号：EP10014465.8
申请日：2010-11-10
申请人： LG-Ericsson Co., Ltd.
发明人： Rhy, Hee Yeal
IPC分类号： G02B6/293 , H01S5/028 , H01S5/34
CPC分类号： H01S5/4006 , B82Y20/00 , H01S5/028 , H01S5/3412
摘要： An AR coated quantum dot resonator (10) implementing a wavelength independent light source to resolve a drawback of degradation in the property of a high temperature optical output due to AR coating of LED or wavelength locked light source, which is filtered to a narrow line width, is disclosed. In one embodiment, a gain medium (13) includes at least one quantum dot and an anti-reflection (AR) coated reflection plane (12,15) at one of front (15) and rear planes (12) of the gain medium (13). The gain medium (13) has a wide line width due to different sizes and distribution of a plurality of quantum dots. The line width includes entire wavelength channels of a WDM or WDM-PON. Also, the AR coated reflection plane is a front reflection plane having a lower reflectivity (e.g., 0.001 % to 1 %.) than that of a rear reflection plane.

24. 发明公开

EP2835882A4 SEMICONDUCTOR LASER APPARATUS AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：EP2835882A4
公开(公告)日：2015-09-02
申请号：EP13772683
申请日：2013-03-05
申请人： PANASONIC IP MAN CO LTD
发明人： YOSHIDA TAKAYUKI , UEDA NAOTO , OOMORI KOUJI , MOTOFUJI TAKUMA , KASAI TERUAKI
IPC分类号： H01S5/022 , H01S5/024 , H01S5/028 , H01S5/223
CPC分类号： H01S5/02461 , H01L24/29 , H01L24/32 , H01L2224/29111 , H01L2224/29144 , H01S5/0226 , H01S5/02268 , H01S5/02272 , H01S5/02469 , H01S5/02492 , H01S5/028 , H01S5/2231 , H01L2924/013 , H01L2924/0105 , H01L2924/01047

25. 发明公开

EP2866316A1 Thermal management of a ridge-type hybrid laser, device, and method 审中-公开
标题翻译： Thermisches Management eines Hydridlasers mit Stegwellenleiter，Vorrichtung und Verfahren
公开(公告)号：EP2866316A1
公开(公告)日：2015-04-29
申请号：EP13306460.0
申请日：2013-10-23
申请人： ALCATEL LUCENT
发明人： Enright, Ryan , Mathews, Ian
IPC分类号： H01S5/223 , H01S5/02 , H01S5/026 , H01S5/10 , H01S5/024 , H01S5/028
CPC分类号： H01S5/2031 , H01S5/021 , H01S5/02469 , H01S5/026 , H01S5/0282 , H01S5/1032 , H01S5/14 , H01S5/22 , H01S5/2235 , H01S2301/176
摘要： Aspects and embodiments relate to a device and method for providing a device. The device comprises: a ridge-type hybrid laser; and a thermally conductive, electrically insulating, coating adjacent a surface of the ridge-type hybrid laser; the coating being configured to transfer heat away from the laser. It will be appreciated that aspects and embodiments recognise that a thermal solution can be implemented to enable energy efficient, scalable, reliable and low cost cooling designs for integrated photonics devices. An arrangement in accordance with aspects and embodiments described herein can provide improved thermal performance of a hybrid ridge type laser device. Such improved thermal performance can facilitate better temperature control, and lower device temperature can result in better device performance and longer device lifetimes. Aspects and embodiments help to provide an integrated thermal approach which can deal with thermal spreading close to where heat on a device is generated within a laser waveguide.
摘要翻译：方面和实施例涉及用于提供设备的设备和方法。该装置包括：脊型混合激光器; 以及邻近脊型混合激光器的表面的导热电绝缘涂层; 所述涂层构造成将热量从激光器传送出去。应当理解，方面和实施例认识到，可以实现热解决方案以实现用于集成光子器件的能量效率，可缩放，可靠和低成本的冷却设计。根据本文所描述的方面和实施例的布置可以提供混合脊型激光装置的改进的热性能。这种改进的热性能可以促进更好的温度控制，并且较低的器件温度可以导致更好的器件性能和更长的器件寿命。方面和实施例有助于提供一种能够处理在激光波导内在器件上产生热量附近的热扩散的集成热方法。

26. 发明公开

EP2852013A1 GROUP-III NITRIDE SEMICONDUCTOR LASER ELEMENT 审中-公开
标题翻译： GRUPPE-III-NITRID-HALBLEITERLASERELEMENT
公开(公告)号：EP2852013A1
公开(公告)日：2015-03-25
申请号：EP13790822.4
申请日：2013-02-22
申请人： Sumitomo Electric Industries, Ltd. , Sony Corporation
发明人： UENO, Masaki , KATAYAMA, Koji , IKEGAMI, Takatoshi , NAKAMURA, Takao , YANASHIMA, Katsunori , NAKAJIMA, Hiroshi
IPC分类号： H01S5/028 , H01S5/22 , H01S5/343
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/0202 , H01S5/0287 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3213 , H01S5/34333
摘要： A group-III nitride semiconductor laser device is provided which can reduce an operating current required to achieve a desired optical output. In the group-III nitride semiconductor laser device 11, the first reflective layer 43a of the lasing cavity has a reflectance of less than 60%, and the second reflective layer 43b of the lasing cavity has a reflectance of 85% or more. This laser device can prevents degradation in the lasing characteristics due to an increase in the threshold current, and a spatial unevenness in the photon density in the lasing cavity. When the reflectance of one of the end faces 26 and 28 is excessively low, this low reflectance results in increase in mirror loss to causes an increase in the threshold current. When the reflectance of the end faces 26 and 28 is excessively high, this high reflectance causes spatial unevenness in the optical density in the lasing cavity, thereby lowering the laser gain. The unevenness in the photon density (spatial hole burning) leads to not only the occurrence of a kink in the I-L characteristics but also a decrease in the wall-plug efficiency.
摘要翻译：提供III族氮化物半导体激光器件，其可以减少实现期望的光输出所需的工作电流。在III族氮化物半导体激光器件11中，激光腔的第一反射层43a的反射率小于60％，激光腔的第二反射层43b的反射率为85％以上。该激光装置可以防止由于阈值电流的增加以及激光腔中的光子密度的空间不均匀引起的激光特性的劣化。当端面26和28中的一个的反射率过低时，这种低反射率导致镜损耗的增加导致阈值电流的增加。当端面26和28的反射率过高时，这种高反射率导致激光腔中的光密度的空间不均匀，从而降低了激光增益。光子密度的不均匀性（空间孔燃烧）不仅导致I-L特性的扭结的发生，而且导致壁塞效率的降低。

27. 发明授权

EP2381544B1 Surface emitting laser device, surface emitting laser array, optical scanning device, image forming apparatus, and manufacturing method of surface emitting laser device 有权
标题翻译：表面发射激光器装置，表面发射激光器阵列，光学扫描装置，图像形成装置和表面发射激光器装置的制造方法
公开(公告)号：EP2381544B1
公开(公告)日：2015-03-04
申请号：EP11162686.7
申请日：2011-04-15
申请人： Ricoh Company, Ltd.
发明人： Shouji, Hiroyoshi , Sato, Shunichi
IPC分类号： H01S5/183 , H01S5/028 , B41J2/47 , H01S5/32 , H01S5/42
CPC分类号： H01S5/18344 , B41J2/471 , H01S5/18311 , H01S5/18327 , H01S5/18338 , H01S5/18347 , H01S5/1835 , H01S5/18355 , H01S5/18377 , H01S5/18386 , H01S5/18391 , H01S5/3202 , H01S5/423 , H01S2301/18

28. 发明授权

EP1650841B1 NITRIDE SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：EP1650841B1
公开(公告)日：2014-12-31
申请号：EP04747320.2
申请日：2004-07-09
申请人： Nichia Corporation
发明人： MATSUMURA, Hiroaki, c/o Nichia Corporation , OCHIAI, Masanao, c/o Nichia Corporation
IPC分类号： H01S5/028 , H01S5/20 , H01S5/323
CPC分类号： H01S5/20 , H01S5/028 , H01S5/32341

29. 发明公开

EP2416460A3 Nitride semiconductor laser element and method for manufacturing same 有权
标题翻译：其Nitridhalbleiterlaserelement及其制造方法
公开(公告)号：EP2416460A3
公开(公告)日：2014-08-27
申请号：EP11176617.6
申请日：2011-08-04
申请人： Nichia Corporation
发明人： Morizumi, Tomonori
IPC分类号： H01S5/028 , H01S5/323
CPC分类号： H01S5/32341 , H01S5/0281 , H01S5/0282 , H01S2301/176
摘要： A nitride semiconductor laser element has a ridge (24) formed on the top face (20) of a nitride semiconductor layer (20). Cavity planes (25a,25b) are formed at the ends of a waveguide region (26) provided beneath the ridge. Insulating film (30) is formed on the side faces of the ridge (24) an on the top face of the nitride semiconductor layer (20) such that its ends on the cavity plane side are spaced from cavity planes. End face protective films (70a,70b) made of AIGaN are formed on the cavity planes, a part of the upper face of the nitride semiconductor layer (20) and a part of the surface of insulating film (30), whereby a first region contacting the insulating film has a crystallinity different from a second region contacting semiconductor layer (20). Degradation of the cavity plane can be suppressed.

30. 发明公开

EP2224558A4 SEMICONDUCTOR LASER ELEMENT 有权
标题翻译： HALBLEITERLASERELEMENT
公开(公告)号：EP2224558A4
公开(公告)日：2013-05-22
申请号：EP08847356
申请日：2008-10-31
申请人： NICHIA CORP
发明人： SONOBE SHINYA , MASUI SHINGO
IPC分类号： H01S5/22 , H01S5/028 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/32 , H01S5/343
CPC分类号： H01S5/168 , B82Y20/00 , H01S5/0021 , H01S5/028 , H01S5/0283 , H01S5/0425 , H01S5/166 , H01S5/2086 , H01S5/2214 , H01S5/222 , H01S5/3214 , H01S5/34333 , H01S2301/176 , H01S2301/18 , H01S2304/04

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