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21. 发明公开

EP2371784A4 LIGHT-TRANSMISSIVE POLYCRYSTALLINE MATERIAL AND METHOD FOR PRODUCING THE SAME 有权转让
标题翻译：半透明多晶材料和方法及其
公开(公告)号：EP2371784A4
公开(公告)日：2013-04-17
申请号：EP09834518
申请日：2009-12-25
申请人： KEK HIGH ENERGY ACCELERATOR , GENESIS RES INST INC
发明人： TAIRA TAKUNORI , AKIYAMA JUN , ASAI SHIGEO , HARA KUNIHIKO
IPC分类号： C04B35/00 , B28B1/00 , C04B35/447 , C04B35/50 , C04B35/645 , C30B1/02 , C30B29/22 , C30B29/30 , C30B30/04 , H01S3/16
CPC分类号： H01F41/0253 , B28B1/00 , B33Y40/00 , C04B35/447 , C04B35/50 , C04B35/6455 , C04B2235/3224 , C04B2235/6027 , C04B2235/605 , C04B2235/9653 , C30B28/00 , C30B29/22 , C30B29/30 , C30B30/04 , H01S3/1603 , H01S3/1611 , H01S3/1618 , H01S3/1671 , H01S3/1673 , H01S3/1685
摘要： Upon producing a transparent polycrystalline material, a suspension liquid (or slurry 1) is prepared, the suspension liquid being made by dispersing a raw-material powder in a solution, the raw-material powder including optically anisotropic single-crystalline particles to which a rare-earth element is added. A formed body is obtained from the suspension liquid by means of carrying out slip casting in a space with a magnetic field applied. On this occasion, while doing a temperature control so that the single-crystalline particles demonstrate predetermined magnetic anisotropy, one of static magnetic fields and rotary magnetic fields is selected in compliance with a direction of an axis of easy magnetization in the single-crystalline particles, and is then applied to them. A transparent polycrystalline material is obtained by sintering the formed body, the transparent polycrystalline material having a polycrystalline structure whose crystal orientation is controlled. In this calcination step, after subjecting the formed body to primary sintering at a temperature of 1, 600-1, 900 K, the resulting primarily-sintered body undergoes hot-isotropic-press sintering (or HIP processing) at a temperature of 1,600-1,900 K.

22. 发明授权

EP2415910B1 Silicon single crystal production method 有权
标题翻译：一种用于制造硅单晶的方法
公开(公告)号：EP2415910B1
公开(公告)日：2013-01-09
申请号：EP11175136.8
申请日：2011-07-25
申请人： Siltronic AG
发明人： Kyufu, Shinichi
IPC分类号： C30B29/06 , C30B15/28 , C30B15/30 , C30B30/04
CPC分类号： C30B29/06 , C30B15/28 , C30B15/305 , C30B30/04

23. 发明授权

EP1538242B1 HEATER FOR CRYSTAL FORMATION, APPARATUS FOR FORMING CRYSTAL AND METHOD FOR FORMING CRYSTAL 有权转让
标题翻译：加热器用于拉晶晶体生长和晶体提拉法装置。
公开(公告)号：EP1538242B1
公开(公告)日：2012-08-08
申请号：EP03795314.8
申请日：2003-09-08
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： SONOKAWA, Susumu, Shin-Etsu Handotai Co., Ltd , HOSHI, Ryoji, Shin-Etsu Handotai Co., Ltd. , SATO, Wataru, Shin-Etsu Handotai Co., Ltd. , OHTA, Tomohiko, Shin-Etsu Handotai Co., Ltd.
IPC分类号： C30B15/14 , C30B35/00 , C30B15/30 , C30B30/04
CPC分类号： C30B15/30 , C30B15/14 , C30B30/04 , C30B35/00 , Y10S117/90 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A heater for crystal formation provided with at least a terminal portion supplied with an electric current and a heating unit using resistance heating. The heater surrounds a crucible containing a raw material melt, and is used for crystal formation by a Czochralski method. The heater characterized by having a uniform heating distribution for the raw material melt after deformed in use for crystal formation. Consequently, the invention solves the conventional problem that a deformed heating unit of a heater used in formation of crystal causes a nonuniform temperature distribution in the raw material melt, which hampers formation of monocrystal resulting in unstable quality of the crystal.

24. 发明公开

EP2318574A1 CONTROLLING A MELT-SOLID INTERFACE SHAPE OF A GROWING SILICON CRYSTAL USING AN UNBALANCED MAGNETIC FIELD AND ISO-ROTATION 审中-公开
标题翻译：管制熔体 - 固体 - 表面上的生长硅晶体的形式使用非平衡磁AND ISOROTATION
公开(公告)号：EP2318574A1
公开(公告)日：2011-05-11
申请号：EP09774246.4
申请日：2009-06-29
申请人： MEMC Electronic Materials, Inc.
发明人： SREEDHARAMURTHY, Hariprasad , KULKARNI, Milind, S. , SCHRENKER, Richard, G. , HOLZER, Joseph, C. , KORB, Harold, W.
IPC分类号： C30B15/30 , C30B30/04 , C30B29/06
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , Y10T117/1032
摘要： A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt.

25. 发明公开

EP1087040A4 METHOD FOR PRODUCING SILICON SINGLE CRYSTAL AND APPARATUS FOR PRODUCING THE SAME, AND SINGLE CRYSTAL AND WAFER PRODUCED WITH THE METHOD 有权
标题翻译： DEVICE AND METHOD FOR硅单晶并因此生产的单晶硅和半导体板的制造（晶片）
公开(公告)号：EP1087040A4
公开(公告)日：2006-08-09
申请号：EP00906720
申请日：2000-03-06
申请人： SHINETSU HANDOTAI KK
发明人： ITOI KIRIO , IINO EIICHI , ISHIZUKA T , OHTA TOMOHIKO , FUSEGAWA I
IPC分类号： C30B15/00 , C30B15/30 , C30B30/04 , C30B29/06
CPC分类号： C30B29/06 , C30B15/305 , C30B30/04 , Y10S117/917
摘要： A method for producing a silicon single crystal comprising growing the single crystal(6) through pulling up the crystal from a silicon melt (3) in a quartz crucible (4) while applying a horizontal magnetic field (10), characterized in that crystal growth is carried out in a manner such that either of a higher temperature portion and a lower temperature portion which are formed on the surface of the silicon melt (3) in the quartz crucible (4) is positioned at a solid-liquid interface observed during the crystal growth or in a manner such that a magnetic field at a crystallization center on the surface of the silicon melt (3) in the quartz crucible (4) has a strength wherein the ratio of its perpendicular component(12) to its horizontal component (11) is 0.3 to 0.5. The method can be used for producing a silicon single crystal rod having a highly uniform concentration distribution for interstitial oxygen atoms in the direction of crystal growth with high productivity and in good yield in the horizontal magnetic field-applied CZ method.
摘要翻译：在用于通过从容纳在石英坩埚中的熔液中的单晶的提拉中，而磁场垂直于晶体生长轴线被施加到容纳在石英坩埚中的硅熔体生长单晶锭制造硅单晶的方法，晶体生长，进行象低温区域和在容纳在坩埚shoulderstand硅熔体的表面所产生的高温区域中的一个总是覆盖晶体生长的固液界面，或垂直磁性的比率在包含在所述石英坩埚的硅熔融液的结晶表面的中心场分量为磁场强度水平磁场成分被控制在0.3以上，0.5以下。提供了用于基于在其中一个水平磁场施加CZ法，它可以产生间隙氧浓度的均匀性高的单晶硅锭连同高生长的单晶的生长方向上产生的硅单晶的方法生产力和高收益。

26. 发明公开

EP1638716A1 VERFAHREN UND VORRICHTUNG ZUR SCHMELZMETALLURGISCHEN HERSTELLUNG VON LEITFÄHIGEN LEGIERUNGEN 审中-公开
标题翻译：方法和设备用于熔化CONDUCTING合金的冶金生产
公开(公告)号：EP1638716A1
公开(公告)日：2006-03-29
申请号：EP04766059.2
申请日：2004-06-18
申请人： Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. , Forschungszentrum Rossendorf e.V.
发明人： PRIEDE, Janis , GERBETH, Gunter , HERMANN, Regina , FILIP, Octavian , SCHULTZ, Ludwig
IPC分类号： B22D11/00 , B22D25/06 , B22D27/02 , C30B13/00 , C30B28/08 , C30B30/04
CPC分类号： C30B13/26 , B22D11/001 , B22D25/06 , B22D27/02 , C30B13/00 , C30B29/52
摘要： The invention relates to the field of material technology and concerns a method and device for the fused metal production of conducting alloys, which find application, for example, as materials for high strength permanent magnets. The aim of the invention is disclosure of a method and device whereby the seed formation, proliferation and transformation properties of forming phases and thus the structure of the solidifying alloys can be influenced. Said aim is achieved, by means of a fused metal production of conducting alloys in which the flow within the melt is influenced by an electromagnetically-generated volume force, to give a non-flowing condition and further, by means of a device for the fused metal production of conducting alloys, whereby a secondary coil is arranged above or below the primary coil and both coils comprise a dedicated resonant circuit, by means of which a phase shift may be controlled.

27. 发明公开

EP1127964A4 FLOATING/MELTING USING DUMMY MICRO-GRAVITATIONAL FIELD BY MAGNETIC FORCE 审中-公开
标题翻译：的磁力在虚设MICRO重力场生长在浮游物或熔融
公开(公告)号：EP1127964A4
公开(公告)日：2004-09-15
申请号：EP00929796
申请日：2000-05-18
申请人： JAPAN SCIENCE & TECH CORP , JP NAT INST OF AIST
发明人： MOTOKAWA MITSUHIRO , WATANABE KAZUO , AWAJI SATOSHI , MOGI IWAO , KITAMURA NAOYUKI , MAKIHARA MASAKI
IPC分类号： C30B11/00 , C30B29/22 , C30B30/04 , C30B30/08 , F27B14/04 , H05B6/32
CPC分类号： C30B30/04 , C30B30/08
摘要： An unmelted substance (6) is disposed in a high magnetic field with a gradient to keep the unmelted substance (6) in a floating condition by a magnetic force produced by a magnetic field gradient and the floating unmelted substance (6) is heated and melted by rays of light from a heating light source (7), or hot-wire irradiation or a resistance heater. Then, heating by rays of light or hot-wire irradiation or the heater is stopped and the molten substance kept in a floating condition is cooled. Since the unmelted substance (6) in a floating condition is melted and cooled by using a magnetic force in a dummy micro-gravitational field, a material having an ideal shape and surface can be obtained.

28. 发明公开

EP0758689A1 Verfahren und Vorrichtung zur Herstellung von Einkristallen 失效
公开(公告)号：EP0758689A1
公开(公告)日：1997-02-19
申请号：EP96112765.1
申请日：1996-08-08
申请人： Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft
发明人： Tomzig, Erich, Dr. , Zulehner, Werner, Dr. , von Ammon, Wilfried, Dr. , Gelfgat, Yu M., Prof. Dr. , Gorbunov, L.A., Dr.
IPC分类号： C30B15/00 , C30B30/04
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1032
摘要： Gegenstand der Erfindung ist ein Verfahren zur Herstellung eines Einkristalls aus Halbleitermaterial nach der Czochralski-Methode. Es zeichnet sich dadurch aus, daß die Schmelze während des Kristallwachstums unter dem Einfluß eines Magnetfelds steht und das Magnetfeld durch Überlagern eines statischen Magnetfelds und eines alternierenden Magnetfelds erzeugt wird. Die Erfindung betrifft auch eine Vorrichtung zur Durchführung des Verfahrens, mit einer magnetischen Einrichtung, die zwei Spulen umfaßt, die um einen Tiegel angeordnet sind, wobei die eine Spule ein statisches und die andere Spule ein alternierendes Magnetfeld erzeugt.
摘要翻译：在半导体单晶产品的过程中。通过在晶体生长期间采用在可旋转石英玻璃坩埚中作用于熔体的磁场的切克劳斯基法，通过叠加静磁场和交变磁场产生磁场。还声称是一个appts。为执行上述过程，应用。具有装有熔融填充坩埚周围的电阻加热器的容器，单晶拉制装置和用于在熔体中产生磁场的磁性装置。新颖的是，磁性装置包括围绕坩埚的两个线圈，一个线圈产生静态磁场，另一个线圈产生交变磁场，并且是优选的。被磁性材料环包围。

29. 发明公开

EP4350055A1 VERFAHREN ZUR HERSTELLUNG EINES EINKRISTALLS AUS SILIZIUM UND HALBLEITERSCHEIBE AUS EINKRISTALLINEM SILIZIUM 审中-公开
公开(公告)号：EP4350055A1
公开(公告)日：2024-04-10
申请号：EP22199997.2
申请日：2022-10-06
申请人： Siltronic AG
发明人： Mangelberger, Karl , Heuwieser, Walter
IPC分类号： C30B15/14 , C30B15/30 , C30B29/06 , C30B30/04
摘要： Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung eines Einkristalls aus Silizium durch Ziehen des Einkristalls aus einer Schmelze, die in einem Tiegel enthalten ist und Phosphor und Bor als Dotierstoffe in einem Verhältnis von nicht mehr als 0,41 enthält, wobei die Schmelze Bor mit einer Konzentration von nicht weniger als 5,0 × 10 14 Atome/cm 3 und nicht mehr als 2,2 × 10 15 Atome/cm 3 enthält und der Einkristall einen zylindrischen Abschnitt mit einem Durchmesser von mindestens 300 mm und eine Länge aufweist und beim Ziehen aus der Schmelze von einem Hitzeschild umgeben ist, und wobei ein unterer Rand des Hitzeschilds einen Abstand von nicht weniger als 18 mm zu einer Oberfläche der Schmelze hat, das Verfahren umfassend
das Drehen des Einkristalls mit einer Geschwindigkeit von nicht weniger als 8 Umin -1 und nicht mehr als 13 Umin ~1 ; und
das Anlegen eines horizontalen Magnetfelds an die Schmelze, dessen magnetische Flussdichte nicht weniger als 2000 Gs und nicht mehr als 3000 Gs beträgt.

30. 发明授权

EP4025726B1 VERFAHREN ZUR HERSTELLUNG VON HALBLEITERSCHEIBEN AUS EINKRISTALLINEM SILIZIUM 有权
公开(公告)号：EP4025726B1
公开(公告)日：2023-07-12
申请号：EP20751546.1
申请日：2020-08-05
发明人： HEUWIESER, Walter , MANGELBERGER, Karl , VETTERHÖFFER, Jürgen
IPC分类号： C30B15/30 , C30B29/06 , C30B30/04

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