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1. 发明公开

EP1090168A1 ELECTRICAL RESISTANCE HEATER FOR CRYSTAL GROWING APPARATUS AND ITS METHOD OF USE 有权
标题翻译：电阻加热使用的结晶生长装置及方法
公开(公告)号：EP1090168A1
公开(公告)日：2001-04-11
申请号：EP99930636.8
申请日：1999-06-24
申请人： MEMC Electronic Materials, Inc.
发明人： SCHRENKER, Richard, G. , LUTER, William, L.
IPC分类号： C30B15/14 , C30B15/00 , C30B29/06
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1016
摘要： An electrical resistance heater for use in a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises a heating element sized and shaped for placement in a housing of the crystal puller generally above a crucible in spaced relationship with the outer surface of the growing ingot for radiating heat to the ingot as it is pulled upward in the housing relative to the molten silicon. The heating element has an upper end and a lower end. The lower end of the heating element is disposed substantially closer to the molten silicon than the upper end when the heating element is placed in the housing. The heating element is constructed such that the heating power output generated by the heating element gradually increases from the lower end to the upper end of the heating element.

2. 发明授权

EP1090168B1 ELECTRICAL RESISTANCE HEATER FOR CRYSTAL GROWING APPARATUS AND ITS METHOD OF USE 有权
标题翻译：电阻加热使用的结晶生长装置及方法
公开(公告)号：EP1090168B1
公开(公告)日：2002-09-11
申请号：EP99930636.8
申请日：1999-06-24
申请人： MEMC Electronic Materials, Inc.
发明人： SCHRENKER, Richard, G. , LUTER, William, L.
IPC分类号： C30B15/14 , C30B15/00 , C30B29/06
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1016
摘要： An electrical resistance heater for use in a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises a heating element sized and shaped for placement in a housing of the crystal puller generally above a crucible in spaced relationship with the outer surface of the growing ingot for radiating heat to the ingot as it is pulled upward in the housing relative to the molten silicon. The heating element has an upper end and a lower end. The lower end of the heating element is disposed substantially closer to the molten silicon than the upper end when the heating element is placed in the housing. The heating element is constructed such that the heating power output generated by the heating element gradually increases from the lower end to the upper end of the heating element.

3. 发明公开

EP1084286A1 ELECTRICAL RESISTANCE HEATER FOR CRYSTAL GROWING APPARATUS 有权
标题翻译：电阻加热晶体提拉装置
公开(公告)号：EP1084286A1
公开(公告)日：2001-03-21
申请号：EP99927263.6
申请日：1999-06-04
申请人： MEMC Electronic Materials, Inc.
发明人： SCHRENKER, Richard, G. , LUTER, William, L.
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , Y10T117/1068 , Y10T117/1088
摘要： An electrical resistance heater of the present invention for use in a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises a heating element sized and shaped for disposition in the housing of the crystal puller around the crucible for applying heat to the crucible and silicon therein. The heating element includes heating segments connected together in an electric circuit. The segments have upper and lower sections and are arranged relative to each other so that when disposed around the crucible containing molten silicon the upper sections are disposed generally above a horizontal plane including the surface of the molten silicon and the lower sections are disposed generally below the horizontal plane. The upper sections are constructed to generate more heating power than the lower sections thereby to reduce a temperature gradient between the molten silicon at its surface and the ingot just above the surface of the molten silicon. The upper sections have a thickness substantially equal to the thickness of the lower sections and have a width substantially less than the width of the lower sections. The cross-sectional area of the upper sections is everywhere less than the cross-sectional area of the lower sections.

4. 发明公开

EP2318574A1 CONTROLLING A MELT-SOLID INTERFACE SHAPE OF A GROWING SILICON CRYSTAL USING AN UNBALANCED MAGNETIC FIELD AND ISO-ROTATION 审中-公开
标题翻译：管制熔体 - 固体 - 表面上的生长硅晶体的形式使用非平衡磁AND ISOROTATION
公开(公告)号：EP2318574A1
公开(公告)日：2011-05-11
申请号：EP09774246.4
申请日：2009-06-29
申请人： MEMC Electronic Materials, Inc.
发明人： SREEDHARAMURTHY, Hariprasad , KULKARNI, Milind, S. , SCHRENKER, Richard, G. , HOLZER, Joseph, C. , KORB, Harold, W.
IPC分类号： C30B15/30 , C30B30/04 , C30B29/06
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , Y10T117/1032
摘要： A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt.

5. 发明公开

EP1328668A1 HEAT SHIELD ASSEMBLY FOR CRYSTAL PULLING APPARATUS 审中-公开
标题翻译：热盾晶体提拉装置
公开(公告)号：EP1328668A1
公开(公告)日：2003-07-23
申请号：EP01970688.6
申请日：2001-09-07
申请人： MEMC Electronic Materials, Inc.
发明人： FERRY, Lee, W. , KIMBEL, Steve, L. , MCCALLUM, Kirk, D. , SCHRENKER, Richard, G.
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1068
摘要： A heat shield assembly is adapted for location within a crystal puller, with respect to a crucible, above molten source material held by the crucible in the puller. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the molten material and is generally interposed between the ingot is pulled from the molten material and is generally interposed between the ingot and the crucible as the ingot is pulled from the source material. The heat shield assembly comprises an outer reflector having an inner surface and an outer surface in generally opposed, spaced relationship with a side wall of the crucible, and an inner reflector located inward of the outer reflector. The inner reflector is constructed of a material having a low emissivity and has an outer surface in generally opposed relationship with the inner surface of the outer reflector. At least one of the outer surface of the inner reflector and the inner surface of the outer reflector has a spacer projecting outward therefrom and adapted for contact relationship between the inner reflector and the outer reflector. The spacer spaces the outer surface of the inner reflector from the inner surface of the outer reflector to inhibit heat conduction from the outer reflector to the inner reflector.

6. 发明公开

EP1034323A1 APPARATUS FOR USE IN CRYSTAL PULLING 有权
标题翻译：用于晶体取出的装置
公开(公告)号：EP1034323A1
公开(公告)日：2000-09-13
申请号：EP98956673.2
申请日：1998-11-10
申请人： MEMC Electronic Materials, Inc.
发明人： CHERKO, Carl, F. , KORB, Harold , SCHRENKER, Richard, G. , WILLIAMS, Dick, S.
IPC分类号： C30B15/30
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： The apparatus comprises a drum, a chuck constructed for holding the seed crystal and the ingot, and a cable having a first end connected to the drum, a second end connected to the chuck and a portion wound around the drum. The portion of the cable wound around the drum exerts a normal force on a circumferential surface of the drum corresponding to the tension in the cable. The drum and cable interact to produce a friction force resisting sliding movement of the cable relative to the drum in a direction lengthwise of the cable. The chuck has a mass selected to exert a pre-tension on the cable prior to growing the ingot such that the increase in the friction on the portion of the cable wound around the drum as the cable is reeled in to pull the ingot from the source material is at least equal to the increase of the weight of the ingot as it grows on the seed crystal from the molten source material.
摘要翻译：该设备包括滚筒，构造成用于保持晶种和晶锭的卡盘，以及具有连接到滚筒的第一端，连接到卡盘的第二端和卷绕在滚筒周围的部分的电缆。缠绕在滚筒周围的电缆部分在滚筒的圆周表面上施加与电缆中的张力对应的法向力。滚筒和缆线相互作用以产生阻止缆线相对于滚筒在缆线长度方向上的滑动运动的摩擦力。卡盘具有选定的质量，以在生长锭块之前在电缆上施加预张力，使得当电缆卷入以拉动锭块从源头拉动时，缠绕在卷筒周围的电缆部分上的摩擦增加材料至少等于晶锭从熔化的源材料生长在晶种上时的重量增加。

7. 发明授权

EP1084286B1 ELECTRICAL RESISTANCE HEATER FOR CRYSTAL GROWING APPARATUS 有权
标题翻译：电阻加热晶体提拉装置
公开(公告)号：EP1084286B1
公开(公告)日：2002-09-04
申请号：EP99927263.6
申请日：1999-06-04
申请人： MEMC Electronic Materials, Inc.
发明人： SCHRENKER, Richard, G. , LUTER, William, L.
IPC分类号： C30B15/14
CPC分类号： C30B15/14 , Y10T117/1068 , Y10T117/1088
摘要： An electrical resistance heater of the present invention for use in a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises a heating element sized and shaped for disposition in the housing of the crystal puller around the crucible for applying heat to the crucible and silicon therein. The heating element includes heating segments connected together in an electric circuit. The segments have upper and lower sections and are arranged relative to each other so that when disposed around the crucible containing molten silicon the upper sections are disposed generally above a horizontal plane including the surface of the molten silicon and the lower sections are disposed generally below the horizontal plane. The upper sections are constructed to generate more heating power than the lower sections thereby to reduce a temperature gradient between the molten silicon at its surface and the ingot just above the surface of the molten silicon. The upper sections have a thickness substantially equal to the thickness of the lower sections and have a width substantially less than the width of the lower sections. The cross-sectional area of the upper sections is everywhere less than the cross-sectional area of the lower sections.

8. 发明授权

EP1034323B1 APPARATUS FOR USE IN CRYSTAL PULLING 有权
标题翻译：用于晶体取出的装置
公开(公告)号：EP1034323B1
公开(公告)日：2001-10-10
申请号：EP98956673.2
申请日：1998-11-10
申请人： MEMC Electronic Materials, Inc.
发明人： CHERKO, Carl, F. , KORB, Harold , SCHRENKER, Richard, G. , WILLIAMS, Dick, S.
IPC分类号： C30B15/30
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072

9. 发明公开

EP1090169A1 CRYSTAL PULLER FOR GROWING LOW DEFECT DENSITY, SELF-INTERSTITIAL DOMINATED SILICON 审中-公开
标题翻译：水晶拉丝器具，用于产生自BETWEEN GRID为主硅低浓度ERROR
公开(公告)号：EP1090169A1
公开(公告)日：2001-04-11
申请号：EP99931814.0
申请日：1999-06-18
申请人： MEMC Electronic Materials, Inc.
发明人： SCHRENKER, Richard, G. , LUTER, William, L.
IPC分类号： C30B15/14 , C30B29/06
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , Y10T117/10
摘要： A crystal puller for growing monocrystalline silicon ingots according to the Czochralski method which are devoid of agglomerated intrinsic point defects over a substantial portion of the radius of the ingot comprises a housing defining an interior having a lower growth chamber and an upper pull chamber. The pull chamber has a smaller transverse dimension than the growth chamber. A crucible is disposed in the growth chamber of the housing for containing molten silicon. A pulling mechanism is provided for pulling a growing ingot upward from the molten silicon through the growth chamber and pull chamber. An electrical resistance heater has a heating element sized and shaped for being disposed at least partially within the upper pull chamber of the housing in radially spaced relationship with the outer surface of the growing ingot for radiating heat to the ingot as it is pulled upward in the pull chamber relative to the molten silicon. The heating element has an upper end and a lower end. The lower end of the heating element is disposed substantially closer to the molten silicon than the upper end when the heating element is placed in the housing.

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