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1. 发明公开

EP1347083A4 SILICON SINGLE CRYSTAL WAFER AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL 有权
标题翻译： SLIZIUMEINKRISTALLSCHEIBE UND HERSTELLUNGSVERFAHRENFÜRSILIZIUMEINKRISTALL
公开(公告)号：EP1347083A4
公开(公告)日：2008-04-16
申请号：EP01272882
申请日：2001-12-26
申请人： SHINETSU HANDOTAI KK
发明人： SAKURADA MASAHIRO , KOBAYASHI TAKESHI , MORI TATSUO , FUSEGAWA IZUMI , OHTA TOMOHIKO
IPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , H01L21/208 , H01L21/66
CPC分类号： C30B29/06 , C30B15/14
摘要： A silicon single crystal wafer having been grown by the Czochralski method, characterized in that the whole wafer belongs to N-region formed in the outside of OSF being generated in a ring form during heat treatment and also is free of a fault region being detected by Cu deposition; and a method for producing a silicon single crystal, characterized in that the single crystal is grown in the above non-fault region. The silicon single crystal wafer belongs to none of V-region being rich in vacant pores, OSF region and I-region being rich in interstitial Si and thus is improved in electric characteristics such as oxide film breakdown strength. The method allows the production of the above wafer under stable production conditions.
摘要翻译：一种通过切克劳斯基法生长的单晶硅晶片，其特征在于，整个晶片属于在热处理过程中以环状形成的OSF外部形成的N区域，并且不存在由铜沉积; 以及一种制造硅单晶的方法，其特征在于，单晶在上述非断层区域中生长。硅单晶晶片不属于富含空孔的V区，富含间隙Si的OSF区和I区，因此氧化膜击穿强度等电特性得到改善。该方法允许在稳定的生产条件下生产上述晶片。

2. 发明公开

EP1275755A4 SILICON WAFER AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL 审中-公开
标题翻译：硅半导体晶片和方法硅单晶
公开(公告)号：EP1275755A4
公开(公告)日：2008-02-27
申请号：EP01915814
申请日：2001-03-27
申请人： SHINETSU HANDOTAI KK
发明人： HOSHI RYOJI , FUSEGAWA IZUMI , OHTA TOMOHIKO , MAEDA SHIGEMARU
IPC分类号： C30B29/06 , C30B15/00 , C30B15/20 , H01L21/208
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206
摘要： A silicon wafer which is made of a silicon single crystal having been grown under conditions in the V-rich region and has particles having a size of 0.1 ñm or more in an amount of 1 piece/cm or less as counted by means of a particle counter; and a method for growing a silicon single crystal by Czochralski method, for use in producing the above silicon wafer, characterized in that a time, L/F (min), required for passing through the temperature range from 1150 DEG C to 1080 DEG C is 0.28/(F/G - 0.225) min or less, and F/G is 0.22 mm /K . min or more, wherein G (K/mm) represents a temperature gradient of the center of a crystal in the direction of pulling up in the range from the melting point of silicon to 1400 DEG C, L (mm) represents the length of the crystal having a temperature in the region from 1150 DEG C to 1080 DEG C, and F (mm/min) represents a rate of crystal growth.

3. 发明公开

EP1087040A4 METHOD FOR PRODUCING SILICON SINGLE CRYSTAL AND APPARATUS FOR PRODUCING THE SAME, AND SINGLE CRYSTAL AND WAFER PRODUCED WITH THE METHOD 有权
标题翻译： DEVICE AND METHOD FOR硅单晶并因此生产的单晶硅和半导体板的制造（晶片）
公开(公告)号：EP1087040A4
公开(公告)日：2006-08-09
申请号：EP00906720
申请日：2000-03-06
申请人： SHINETSU HANDOTAI KK
发明人： ITOI KIRIO , IINO EIICHI , ISHIZUKA T , OHTA TOMOHIKO , FUSEGAWA I
IPC分类号： C30B15/00 , C30B15/30 , C30B30/04 , C30B29/06
CPC分类号： C30B29/06 , C30B15/305 , C30B30/04 , Y10S117/917
摘要： A method for producing a silicon single crystal comprising growing the single crystal(6) through pulling up the crystal from a silicon melt (3) in a quartz crucible (4) while applying a horizontal magnetic field (10), characterized in that crystal growth is carried out in a manner such that either of a higher temperature portion and a lower temperature portion which are formed on the surface of the silicon melt (3) in the quartz crucible (4) is positioned at a solid-liquid interface observed during the crystal growth or in a manner such that a magnetic field at a crystallization center on the surface of the silicon melt (3) in the quartz crucible (4) has a strength wherein the ratio of its perpendicular component(12) to its horizontal component (11) is 0.3 to 0.5. The method can be used for producing a silicon single crystal rod having a highly uniform concentration distribution for interstitial oxygen atoms in the direction of crystal growth with high productivity and in good yield in the horizontal magnetic field-applied CZ method.
摘要翻译：在用于通过从容纳在石英坩埚中的熔液中的单晶的提拉中，而磁场垂直于晶体生长轴线被施加到容纳在石英坩埚中的硅熔体生长单晶锭制造硅单晶的方法，晶体生长，进行象低温区域和在容纳在坩埚shoulderstand硅熔体的表面所产生的高温区域中的一个总是覆盖晶体生长的固液界面，或垂直磁性的比率在包含在所述石英坩埚的硅熔融液的结晶表面的中心场分量为磁场强度水平磁场成分被控制在0.3以上，0.5以下。提供了用于基于在其中一个水平磁场施加CZ法，它可以产生间隙氧浓度的均匀性高的单晶硅锭连同高生长的单晶的生长方向上产生的硅单晶的方法生产力和高收益。

4. 发明公开

EP1538242A4 HEATER FOR CRYSTAL FORMATION, APPARATUS FOR FORMING CRYSTAL AND METHOD FOR FORMING CRYSTAL 有权转让
标题翻译：加热装置用于提拉装置用于拉晶和晶体的绘制方法
公开(公告)号：EP1538242A4
公开(公告)日：2009-07-29
申请号：EP03795314
申请日：2003-09-08
申请人： SHINETSU HANDOTAI KK
发明人： SONOKAWA SUSUMU , HOSHI RYOJI , SATO WATARU , OHTA TOMOHIKO
IPC分类号： C30B15/14 , C30B29/06 , C30B35/00
CPC分类号： C30B15/30 , C30B15/14 , C30B30/04 , C30B35/00 , Y10S117/90 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A heater for crystal formation provided with at least a terminal portion supplied with an electric current and a heating unit using resistance heating. The heater surrounds a crucible containing a raw material melt, and is used for crystal formation by a Czochralski method. The heater characterized by having a uniform heating distribution for the raw material melt after deformed in use for crystal formation. Consequently, the invention solves the conventional problem that a deformed heating unit of a heater used in formation of crystal causes a nonuniform temperature distribution in the raw material melt, which hampers formation of monocrystal resulting in unstable quality of the crystal.

5. 发明公开

EP1182281A4 SINGLE CRYSTAL GROWING DEVICE AND PRODUCTION METHOD OF SINGLE CRYSTAL USING THE DEVICE AND SINGLE CRYSTAL 审中-公开
标题翻译：单晶，单晶的方法向上述设备和单晶
公开(公告)号：EP1182281A4
公开(公告)日：2009-03-04
申请号：EP01949010
申请日：2001-01-25
申请人： SHINETSU HANDOTAI KK
发明人： HOSHI RYOJI , KITAGAWA KOJI , FUSEGAWA IZUMI , OHTA TOMOHIKO
IPC分类号： C30B15/14 , C30B15/20 , C30B29/06 , C30B15/00
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A single crystal growing device (20) comprising at least a main chamber (1) storing therein crucibles (5, 6) containing material melt (4) and a heater (7) for heating the material melt, and a pulling-up chamber (2) continuously provided to the upper portion of the main chamber, for pulling up and storing therein a grown single crystal, characterized in that the device further comprises a cooling tube (11) extending from at least the ceiling of the main chamber toward the melt surface so as to surround a single crystal (3) being pulled up and cooled forcibly by a cooling medium, and an auxiliary cooling member (13) extending downward beyond the cooling tube and being in a tubular or downwardly diameter-reduced shape, whereby it is possible to deliver a maximum cooling effect to a grown single crystal, speed up a crystal growth, and produce a single crystal safely without cooling medium leakage due to damages or the like.

6. 发明公开

EP1818971A4 METHOD FOR MANUFACTURING DIRECT BOND WAFER, AND DIRECT BOND WAFER 有权转让
标题翻译：法生产直接接触晶圆直接接触晶圆
公开(公告)号：EP1818971A4
公开(公告)日：2008-01-23
申请号：EP05811712
申请日：2005-11-29
申请人： SHINETSU HANDOTAI KK
发明人： KOBAYASHI NORIHIRO , ISHIZUKA TORU , OHTA TOMOHIKO , AGA HIROJI , NAGAOKA YASUO
IPC分类号： H01L21/02 , H01L21/18 , H01L21/324 , H01L21/762
CPC分类号： H01L21/2007 , H01L21/76254
摘要： In a method for manufacturing a direct bond wafer, a thermally oxidized film or a CVD oxide film is formed on a surface of at least a bond wafer or a base wafer, and after bonding the wafer with the other wafer through the oxide film, the bond wafer is made into a thin film and a bond wafer is made. Then, annealing is performed to the bond wafer in an atmosphere containing an inert gas or hydrogen or a mixed gas of them, the oxide film between the bond wafer and the base wafer is removed and the bond wafer and the base wafer are directly bonded. Thus, the method for manufacturing the direct bond wafer wherein void generation is suppressed and the direct bond wafer having less voids are provided.

7. 发明公开

EP1076120A4 METHOD FOR PRODUCING SILICON SINGLE CRYSTAL 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG VON SILIZIUMEINKRISTALLEN
公开(公告)号：EP1076120A4
公开(公告)日：2001-05-09
申请号：EP00905294
申请日：2000-02-23
申请人： SHINETSU HANDOTAI KK
发明人： ISHIZUKA TOHRU , MIYAHARA YUUICHI , FUSEGAWA IZUMI , OHTA TOMOHIKO
IPC分类号： H01L21/208 , C30B15/00 , C30B15/30 , C30B29/06 , C30B15/10
CPC分类号： C30B29/06 , C30B15/305
摘要： A method for producing a silicon single crystal which comprises growing a single crystal through pulling it up according to a type of Czochralsky method wherein magnetic field is applied, characterized in that one quartz crucible is used for a period of 100 hr or more for the production of silicon single crystals and the magnetic field strength of the horizontal component in a horizontal magnetic field distribution or cnsp type magnetic field distribution being applied is 500 Gauss or more at a position where the surface of a silicon melt and the side wall of a quartz crucible cross perpendicularly. The method leads to the inhibition of the deterioration of the inner surface of the crucible and thus to the increase of the operating life of the crucible to thereby prevent a single crystal from having a dislocation which is usually generated with the deterioration of a crucible, which results in the decrease of the number of crucible required per single crystal rod to be pulled and also the reduction of the time required for the exchange of crucibles. Accordingly, the method can be used for improving yield and productivity in the production of silicon single crystals and thus provides a method for producing a high quality products commercially at a low cost.
摘要翻译：一种制造硅单晶的方法，包括通过施加磁场的Czochralski法拉伸生长单晶锭，其中通过使用单个石英坩埚产生硅单晶的周期为100小时以上，水平强度要施加的水平分量磁场分布或尖点型磁场分布中的分量磁场在硅熔体表面与石英坩埚的侧壁垂直相交的位置处为500高斯或更高。根据本发明，可以提供一种制造硅单晶的方法，其可以抑制石英坩埚内表面的劣化，从而实现石英坩埚的寿命延长，防止由于劣化引起的位错引入坩埚，减少要拉拔的每个晶锭的坩埚数量，减少坩埚交换所需的时间，提高产量和生产率，以及以低成本高质量的硅单晶的工业生产。

8. 发明公开

EP1650332A4 METHOD FOR PRODUCING SINGLE CRYSTAL AND SINGLE CRYSTAL 审中-公开
标题翻译： VERFAHREN ZUR EINKRISTALLHERSTELLUNG UND EINKRISTALL
公开(公告)号：EP1650332A4
公开(公告)日：2008-10-01
申请号：EP04745358
申请日：2004-05-27
申请人： SHINETSU HANDOTAI KK
发明人： MITAMURA NOBUAKI , OHTA TOMOHIKO , FUSEGAWA IZUMI , SAKURADA MASAHIRO , OZAKI ATSUSHI
IPC分类号： C30B15/20 , C30B15/00 , C30B29/06
CPC分类号： C30B29/06 , C30B15/203
摘要： A method for producing a single crystal having a whole face in the radius direction being free of a defect through the pull-up of the single crystal from a melt of a raw material in a chamber by the Czochralsky Method, characterized in that conditions for the pull-up in the growth direction are changed so that the margin of the pull-up rate allowing the formation of a whole face in the radius direction free of a defect takes a specific value or more. The method can be employed for stably producing a single crystal having a whole face in the radius direction being free of a defect, over the whole region in the direction of the growth axis of the crystal, in the growth of a single crystal by the CZ method.
摘要翻译：通过利用Czochralsky方法从腔室内的原料的熔融液中提拉单晶，从而制造在径向上具有整面的单晶的无缺陷的方法，其特征在于，改变生长方向的拉伸，使得允许在半径方向上形成整个面的没有缺陷的拉起率的边界值为特定值或更大。该方法可以用于在CZ生长单晶过程中，在整个晶体生长轴方向上的整个区域内稳定地制造在半径方向上没有缺陷的整个面的单晶方法。

9. 发明公开

EP1069214A4 EPITAXIAL SILICON WAFER AND ITS PRODUCTION METHOD, AND SUBSTRATE FOR EPITAXIAL SILICON WAFER 有权
标题翻译：硅外延片及外延硅晶片方法及基板
公开(公告)号：EP1069214A4
公开(公告)日：2007-01-24
申请号：EP00901901
申请日：2000-01-26
申请人： SHINETSU HANDOTAI KK
发明人： HOSHI RYOJI , SONOKAWA SUSUMU , SAKURADA MASAHIRO , OHTA TOMOHIKO , FUSEGAWA IZUMI
IPC分类号： C30B29/06 , C30B15/00 , C30B15/20
CPC分类号： C30B29/06 , C30B15/203
摘要： An epitaxial silicon wafer having no projection whose size is 100 nm or more and whose height is 5 nm on an epitaxial layer, and a method for producing an epitaxial silicon wafer produced by growing by a CZ method a single crystal rod where no I region is present, cutting the single crystal rod into a silicon wafer where no I region is present over the surface, and depositing an epitaxial layer on the wafer. A high-quality epitaxial wafer is provided which is produced by forming a wafer containing no I region over the surface from a single crystal and depositing an epitaxial layer on the wafer and which has no projection nor projection like distortion on the epitaxial layer observed as a particle. A single crystal containing no I region over the surface extending in the direction of the radius of the single crystal is produced at high yield and productivity, thereby improving the productivity of an epitaxial wafer and reducing the manufacturing cost.

10. 发明公开

EP1193333A4 METHOD FOR PREPARING SILICON SINGLE CRYSTAL AND SILICON SINGLE CRYSTAL 审中-公开
标题翻译：用于生产单晶硅及单晶硅
公开(公告)号：EP1193333A4
公开(公告)日：2006-10-04
申请号：EP01906348
申请日：2001-02-27
申请人： SHINETSU HANDOTAI KK
发明人： FUSEGAWA IZUMI , HOSHI RYOJI , INOKOSHI KOUICHI , OHTA TOMOHIKO
IPC分类号： C30B15/00 , C30B15/30 , C30B29/06 , H01L21/208 , H01L21/322
CPC分类号： C30B29/06 , C30B15/305 , Y10S117/917
摘要： A method for preparing a silicon single crystal, characterized in that the single crystal (8) is prepared by the MCZ method, and the flow rate of an inert gas flowed through a growing furnace (1) during the growth of a silicon single crystal and/or the pressure inside the growing furnace (1) are changed depending on the rate of the amount of the single crystal (8) being pulled up, to thereby control the concentration of the interstitial oxygen in the single crystal. The change of the flow rate or pressure of an inert gas in the growing furnace (1) permits controlling with ease the amount of oxygen which distills as an oxide from the surface of a melt in the vicinity of the interface where the crystal is growing, which leads to the control of the amount of oxygen contained in the silicon melt (10) with ease.

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