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21. 发明公开

EP0432905A3 Polyisophenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof 失效
标题翻译：聚异戊烯基硅氧烷，其生产工艺及其耐腐蚀材料及其形成的半导体器件
公开(公告)号：EP0432905A3
公开(公告)日：1992-03-04
申请号：EP90312397.4
申请日：1990-11-14
申请人： FUJITSU LIMITED
发明人： Watanabe, Keiji , Oikawa, Akira , Fukuyama, Shun-Ichi , Yamagami, Masaaki , Namiki, Takahisa
IPC分类号： C08G77/52 , G03F7/00
CPC分类号： G03F7/0757 , C08G77/52 , Y10S430/143 , Y10S430/168 , Y10S438/948
摘要： Novel polysilphenylenesiloxanes having a three-dimensional mesh structure of silphenylenesiloxane core surrounded by triorganosilyl groups, which have a good sensitivity to ionizing radiations such as deep ultraviolet rays, electron beams and X-rays, a high softening point of 400 °C or more, and a good resistance to 0 2 -plasma etching, and exhibit a high contrast and low swelling. These polysiphenylenesiloxanes are useful as a resist material, especially a top layer resist of the bi-level resist system and an interlevel dielectric or heat-resisting protective layer. The resist material has a high resolution because of a high contrast, low swelling and high thermal resistance thereof.

22. 发明公开

EP0370935A3 Method of forming conductive lines and studs 失效
标题翻译：形成导线和方法的方法
公开(公告)号：EP0370935A3
公开(公告)日：1991-04-10
申请号：EP89480158.8
申请日：1989-10-10
申请人： International Business Machines Corporation
发明人： Greco, Nancy Ann , Greco, Stephen Edward
IPC分类号： H01L21/60 , H01L21/90 , G03F7/008
CPC分类号： H01L21/76885 , H05K3/4647 , Y10S438/948
摘要： A method is provided for forming a conductive stud and line over a surface (12), comprising the steps of forming at least a first layer of material (14) over the region on the surface whereat the conductive stud and line are to be formed; forming a layer (22) of dual image photoresist over the material; exposing the dual image photoresist to radiation so as to form at least first and second regions (22A, 22B, 22C) exhibiting different development characteristics; developing the first region (22A) so as to expose a portion of the material; removing the exposed portion of the material so as to define the position of one of the conductive line or stud; developing the second region to expose more of the material; and removing the newly exposed portion of material so as to define the position of the other of the conductive line (16′/18′) or stud (20′).

23. 发明公开

EP0420489A2 Compensation of lithographic and etch proximity effects 有权转让
标题翻译： Kompensation von lithographischen undÄtznäheeffekten。
公开(公告)号：EP0420489A2
公开(公告)日：1991-04-03
申请号：EP90310242.4
申请日：1990-09-19
申请人： AT&T Corp.
发明人： Eisenberg, Juli Hong , Fritzinger, Larry Bruce , Fu, Chong-Cheng , Kook, Taeho , Wolf, Thomas Michael
IPC分类号： G03F7/20
CPC分类号： G03F7/20 , Y10S438/941 , Y10S438/948
摘要： In the manufacture of integrated-circuit devices, patterned features are made on a substrate by etching a deposited layer. The pattern comprises features which are closely spaced, as well as others which are more isolated. Etching is in approximate conformance with a lithographically defined resist pattern which in turn is in approximate conformance with a desired pattern. A processing parameter such as, e.g., resist layer thickness is chosen such that an etched pattern is obtained which approximates a desired pattern more closely than a lithographically defined resist pattern.
摘要翻译：在集成电路器件的制造中，通过蚀刻沉积层在衬底上形成图案化特征。该图案包括紧密间隔的特征，以及更孤立的其他特征。蚀刻大致符合光刻定义的抗蚀剂图案，其又与所需图案大致一致。选择诸如抗蚀剂层厚度的处理参数，使得获得蚀刻图案，其近似于光刻定义的抗蚀剂图案的期望图案。

24. 发明公开

EP0405585A2 A method of manufacturing a semiconductor device 失效
标题翻译：一种制造半导体器件的方法
公开(公告)号：EP0405585A2
公开(公告)日：1991-01-02
申请号：EP90112466.9
申请日：1990-06-29
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tsuji, Hitoshi, C/o Intel. Prop. Div. , Haraguchi, Hiroshi, C/o Intel. Prop. Div. , Hirata, Osamu, C/o Intel. Prop. Div. , Hashimoto, Hidetsuna, C/o Intel. Prop. Div.
IPC分类号： H01L21/311 , H01L23/544 , G03F7/38 , H01L21/3105
CPC分类号： H01L21/31144 , G03F7/2022 , G03F7/38 , H01L21/31058 , H01L21/76804 , H01L21/76813 , Y10S148/137 , Y10S438/948
摘要： A manufacturing method of a semiconductor device of the present invention comprises a first step (Fig. 4A) of exposing a periphery of a first region (31) of a photoresist layer (18) coating an insulating layer (12) formed on a semiconductor substrate (10) and a periphery of a second region (32) for positioning, and a second step (Fig. 4A) of heating said photoresist layer (13) in ammonia atmosphere and forming an alkali insoluble portion in the periphery of the first region (31) and that of the second region (32), a third step (Fig. 4B) of exposing a third region (33), which is smaller than the first region (31), and the second region (32) and developing these regions, a fourth step (Figs. 4B and 4C) of etching the third region (33) and the second region (32) to a predetermined depth, and a fifth step (Fig. 4D, Fig. 4E, Fig. 4F) of repeating the third and fourth steps once or more in a region, which is smaller than the third region (33), and the second region (32).
摘要翻译：本发明的半导体器件的制造方法包括暴露光致抗蚀剂层（18）的第一区域（31）的外围的第一步骤（图4A），该光致抗蚀剂层（18）涂覆形成在半导体衬底（12）上的绝缘层（10）和用于定位的第二区域（32）的周边;以及第二步骤（图4A），在氨气氛中加热所述光致抗蚀剂层（13），并在第一区域的周边形成碱不溶部分（31）和第二区域（32）的第三区域（31）的第三区域（图4B），以及使比第一区域（31）小的第三区域（33）和第二区域（32），将第三区域（33）和第二区域（32）蚀刻到预定深度的第四步骤（图4B和图4C），以及第五步骤（图4D，图4E，图4F）在小于第三区域（33）和第二区域（32）的区域中重复第三和第四步骤一次或更多次。

25. 发明授权

EP0163538B1 Pattern-forming material and its production and use 失效
标题翻译：图案形成材料及其生产和使用
公开(公告)号：EP0163538B1
公开(公告)日：1989-11-23
申请号：EP85303811.5
申请日：1985-05-30
申请人： FUJITSU LIMITED
发明人： Fukuyama, Shun-ichi , Yoneda, Yasuhiro , Miyagawa, Masashi , Nishii, Kota
IPC分类号： G03F7/10
CPC分类号： G03F7/0757 , Y10S438/948

26. 发明公开

EP0283265A3 Silicon containing resists 失效
标题翻译：含硅的电阻
公开(公告)号：EP0283265A3
公开(公告)日：1989-01-11
申请号：EP88302298.0
申请日：1988-03-16
申请人： SYN LABS. INC. (MATERIALS TECHNOLOGY)
发明人： Leveriza, Carina Tinsley , Morgan, Russell Alan c/o Syn Labs. Inc.
IPC分类号： G03F7/10
CPC分类号： G03F7/0758 , Y10S438/948 , Y10T428/31663
摘要： A resist material characterised in that it is capable of forming a negative image by application of radiation, the said material comprising a silyl-containing styrene copolymer and the average molecular weight of the said copolymer being at least 2000 is disclosed. A lithographic process for preparing a pattern resist on a suitable substrate characterised in that it comprises:
1) applying a layer of resist material onto a substrate, the said polymer being selected from alkylsilyl-containing styrene copolymers with halogenated methylstyrene; 2) irradiating the said resist copolymer layer to form a negative pattern image therein; and 3) developing the said image by:
i) dissolving away unexposed polymer with a suitable developer solvent; and ii) rinsing the said wet developed resist with suitable solvent to maintain well-defined developed resist pattern image; and 4) etching the resist material in a suitable plasma; is also disclosed. Negative resist compositions and semiconductor wafers are further disclosed. The present resists have reduced resist erosion and improved plasma resiliency.
摘要翻译：一种抗蚀剂材料，其特征在于其能够通过施加辐射形成负像，所述材料包含含甲硅烷基的苯乙烯共聚物，并且所述共聚物的平均分子量至少为2000。一种用于在合适的基底上制备图案抗蚀剂的光刻工艺，其特征在于其包括：1）将抗蚀剂材料层施加到基底上，所述聚合物选自含卤代甲基苯乙烯的含烷基甲硅烷基的苯乙烯共聚物; 2）照射所述抗蚀剂共聚物层以在其中形成负图案图像; 和3）通过以下步骤显影所述图像：i）用合适的显影剂溶剂溶解未曝光的聚合物; 和ii）用合适的溶剂冲洗所述湿式显影抗蚀剂以保持明确定义的显影抗蚀剂图案图像; 和4）在合适的等离子体中蚀刻抗蚀剂材料; 也被披露。进一步公开了负型抗蚀剂组合物和半导体晶片。本发明的抗蚀剂具有降低的抗蚀剂侵蚀和改善的等离子体弹性。

27. 发明公开

EP0283265A2 Silicon containing resists 失效
标题翻译： Silikone enthaltende Photolacke。
公开(公告)号：EP0283265A2
公开(公告)日：1988-09-21
申请号：EP88302298.0
申请日：1988-03-16
申请人： SYN LABS. INC. (MATERIALS TECHNOLOGY)
发明人： Leveriza, Carina Tinsley , Morgan, Russell Alan c/o Syn Labs. Inc.
IPC分类号： G03F7/10
CPC分类号： G03F7/0758 , Y10S438/948 , Y10T428/31663
摘要： A resist material characterised in that it is capable of forming a negative image by application of radiation, the said material comprising a silyl-containing styrene copolymer and the average molecular weight of the said copolymer being at least 2000 is disclosed. A lithographic process for preparing a pattern resist on a suitable substrate characterised in that it comprises:

1) applying a layer of resist material onto a substrate, the said polymer being selected from alkylsilyl-containing styrene copolymers with halogenated methylstyrene;
2) irradiating the said resist copolymer layer to form a negative pattern image therein; and
3) developing the said image by:

i) dissolving away unexposed polymer with a suitable developer solvent; and
ii) rinsing the said wet developed resist with suitable solvent to maintain well-defined developed resist pattern image; and

4) etching the resist material in a suitable plasma;
is also disclosed.
Negative resist compositions and semiconductor wafers are further disclosed.
The present resists have reduced resist erosion and improved plasma resiliency.
摘要翻译：一种抗蚀剂材料，其特征在于其能够通过施加辐射形成负像，所述材料包含含甲硅烷基的苯乙烯共聚物，并且所述共聚物的平均分子量至少为2000。一种用于在合适的基底上制备图案抗蚀剂的光刻工艺，其特征在于其包括：1）将抗蚀剂材料层施加到基底上，所述聚合物选自含卤代甲基苯乙烯的含烷基甲硅烷基的苯乙烯共聚物; 2）照射所述抗蚀剂共聚物层以在其中形成负图案图像; 和3）通过以下步骤显影所述图像：i）用合适的显影剂溶剂溶解未曝光的聚合物; 和ii）用合适的溶剂冲洗所述湿式显影抗蚀剂以保持明确定义的显影抗蚀剂图案图像; 和4）在合适的等离子体中蚀刻抗蚀剂材料; 也被披露。进一步公开了负型抗蚀剂组合物和半导体晶片。本发明的抗蚀剂具有降低的抗蚀剂侵蚀和改善的等离子体弹性。

28. 发明公开

EP0260976A3 Adhesion promoting product and process for treating an integrated circuit substrate therewith 失效
标题翻译：粘合促进产品及其处理集成电路基板的工艺
公开(公告)号：EP0260976A3
公开(公告)日：1988-08-03
申请号：EP87308256
申请日：1987-09-17
申请人： Brewer Science, Inc.
发明人： Brewer, Terry , Flaim, Tony D. , Moss, Mary G.
IPC分类号： G03F07/02
CPC分类号： G03F7/0751 , Y10S438/948
摘要： An improved method of promoting the adhesion of microelectronic coatings to substrates uses new adhesion promoters [such as (aminophenyl)alkoxysilanes, non-amino aromatic alkoxysilanes, non-amino (chloroalkyl)alkoxysilanes or non-amino acrylic alkoxysilanes], catalysts for adhesion promoters and adjuvant polymers.

29. 发明公开

EP0260976A2 Adhesion promoting product and process for treating an integrated circuit substrate therewith 失效
标题翻译：指促进粘合和治疗集成电路它载波的方法。
公开(公告)号：EP0260976A2
公开(公告)日：1988-03-23
申请号：EP87308256.4
申请日：1987-09-17
申请人： Brewer Science, Inc.
发明人： Brewer, Terry , Flaim, Tony D. , Moss, Mary G.
IPC分类号： G03F7/02
CPC分类号： G03F7/0751 , Y10S438/948
摘要： An improved method of promoting the adhesion of microelectronic coatings to substrates uses new adhesion promoters [such as (aminophenyl)alkoxysilanes, non-amino aromatic alkoxysilanes, non-amino (chloroalkyl)alkoxysilanes or non-amino acrylic alkoxysilanes], catalysts for adhesion promoters and adjuvant polymers.
摘要翻译：促销廷的改进的方法的微电子涂层基材的粘合使用新粘合促进剂[：如（氨基苯基）烷氧基硅烷，非氨基芳族烷氧基，非氨基（氯烷基）烷氧基硅烷或非氨基的丙烯酸的烷氧基硅烷]用于粘合促进剂催化剂和佐剂聚合物。

30. 发明公开

EP0040535A1 Method of forming a microscopic pattern, and a photoresist 失效
标题翻译：形成微细凹凸结构的方法，和光致抗蚀剂。
公开(公告)号：EP0040535A1
公开(公告)日：1981-11-25
申请号：EP81302194.6
申请日：1981-05-18
申请人： Hitachi, Ltd.
发明人： Matsuzawa, Toshiharu , Iwayanagi, Takao , Douta, Kikuo , Yanazawa, Hiroshi , Kohashi, Takahiro , Nonogaki, Saburo
IPC分类号： H01L21/302 , H01L21/312 , G03F7/08
CPC分类号： G03F7/0125 , Y10S438/948
摘要： A film of a photoresist having phenolic hydroxyl groups is irradiated with far-ultraviolet radiation, and is thereafter developed with an alkaline aqueous solution. Using the resist pattern thus obtained as a mask, dry etching is carried out to form a microscopic pattern. The photoresist of this composition is highly immune against dry etching, so that the microscopic pattern can be formed at a high precision. By adding an azide of a specified structure, the photoresist has its sensitivity to the far-ultraviolet radiation greatly enhanced, allowing shorter exposure times.

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