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1. 发明公开

EP0198976A3 Preparation of polysilsesquioxane and formation of insulating layer of silylated polysilsesquioxane 失效
标题翻译：聚硅氧烷的制备和形成绝缘多晶硅烷的绝缘层
公开(公告)号：EP0198976A3
公开(公告)日：1988-03-23
申请号：EP85307905
申请日：1985-10-31
申请人： FUJITSU LIMITED
发明人： Fukuyama, Shun-ichi , Yoneda, Yasuhiro , Miyagawa, Masashi , Nishii, Kota , Matsuura, Azuma
IPC分类号： C08G77/06 , H01B03/46
CPC分类号： H01L21/02137 , C08G77/06 , H01B3/46 , H01L21/02282 , H01L21/3122 , H01L21/4803 , H01L21/481 , H01L23/49894 , H01L2924/0002 , H05K3/4676 , Y10S428/90 , Y10S428/901 , Y10T428/31663 , Y10T428/31678 , H01L2924/00
摘要： A lower alkyl polysilsesquioxane having a general formula
wherein R is lower alkyl, preferably CH 3 or C 2 H 5 , and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -20°C to -50°C to form an organic solution thereof; (b) hydrolysing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20°C to -50°C under an inert gas pressurised at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60°C to 100°C under an inert gas pressurised at 1,000 to 3,000 Pa. Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula
wherein R' and R 2 are each selected from alkyl and phenyl (preferably methyl or ethyl), and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.

2. 发明公开

EP0481715A3 Injection moulding of plastics housings 无效
标题翻译：注塑成型塑料外壳
公开(公告)号：EP0481715A3
公开(公告)日：1992-08-12
申请号：EP91309463.7
申请日：1991-10-15
申请人： FUJITSU LIMITED , FUJITSU KASEI LTD.
发明人： Adachi, Katsura , Usui, Makoto , Nishii, Kota , Muraya, Takashi , Kobayashi, Toshihiro , Tamura, Kazuyuki , Sato, Junichi
IPC分类号： B29C45/00 , B29C45/26
CPC分类号： H05K5/0008 , B29C45/00 , B29C45/26
摘要： A tray-form plastic housing (1) integrally moulded with a resin comprises a flat bottom wall (3) having a peripheral edge, and an upright wall (2) extending upward from the peripheral edge of the bottom wall. The bottom wall (3) and the upright wall (2) cooperatively define an integral box-shaped moulded product. The thickness of the bottom wall (3) is in the range from one third to two thirds of the thickness of the upright wall (2). The bottom wall (3) may be provided with at least one rib (4) on its inner surface. Also disclosed is a process for producing the housing, comprising an injection moulding process using a mould having a mould cavity, the mould being provided with at least one groove on an inner surface of the cavity corresponding to the rib(s).

3. 发明公开

EP0481715A2 Injection moulding of plastics housings 无效
标题翻译： Spritzgiessen vonKunststoffgehäusen。
公开(公告)号：EP0481715A2
公开(公告)日：1992-04-22
申请号：EP91309463.7
申请日：1991-10-15
申请人： FUJITSU LIMITED , FUJITSU KASEI LTD.
发明人： Adachi, Katsura , Usui, Makoto , Nishii, Kota , Muraya, Takashi , Kobayashi, Toshihiro , Tamura, Kazuyuki , Sato, Junichi
IPC分类号： B29C45/00 , B29C45/26
CPC分类号： H05K5/0008 , B29C45/00 , B29C45/26
摘要： A tray-form plastic housing (1) integrally moulded with a resin comprises a flat bottom wall (3) having a peripheral edge, and an upright wall (2) extending upward from the peripheral edge of the bottom wall. The bottom wall (3) and the upright wall (2) cooperatively define an integral box-shaped moulded product. The thickness of the bottom wall (3) is in the range from one third to two thirds of the thickness of the upright wall (2). The bottom wall (3) may be provided with at least one rib (4) on its inner surface. Also disclosed is a process for producing the housing, comprising an injection moulding process using a mould having a mould cavity, the mould being provided with at least one groove on an inner surface of the cavity corresponding to the rib(s).
摘要翻译：与树脂整体模制的托盘形塑料外壳（1）包括具有周缘的平底壁（3）和从底壁的周缘向上延伸的直立壁（2）。底壁（3）和直立壁（2）协调地限定一体的盒状模制产品。底壁（3）的厚度在直立壁（2）的厚度的三分之一到三分之二的范围内。底壁（3）可以在其内表面上设置有至少一个肋（4）。还公开了一种用于制造壳体的方法，其包括使用具有模腔的模具的注射成型工艺，所述模具在对应于所述肋的所述腔的内表面上设置有至少一个凹槽。

4. 发明公开

EP0198976A2 Process for formation of insulating layer of silylated polysilsesquioxane on electronic circuit board 失效
标题翻译：一种用于生产电子印刷电路上绝缘甲硅烷基化聚倍半硅氧烷的层的过程。
公开(公告)号：EP0198976A2
公开(公告)日：1986-10-29
申请号：EP85307905.1
申请日：1985-10-31
申请人： FUJITSU LIMITED
发明人： Fukuyama, Shun-ichi , Yoneda, Yasuhiro , Miyagawa, Masashi , Nishii, Kota , Matsuura, Azuma
IPC分类号： C08G77/06 , H01B3/46
CPC分类号： H01L21/02137 , C08G77/06 , H01B3/46 , H01L21/02282 , H01L21/3122 , H01L21/4803 , H01L21/481 , H01L23/49894 , H01L2924/0002 , H05K3/4676 , Y10S428/90 , Y10S428/901 , Y10T428/31663 , Y10T428/31678 , H01L2924/00
摘要： A lower alkyl polysilsesquioxane having a general formula
wherein R is lower alkyl, preferably CH 3 or C 2 H 5 , and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -20°C to -50°C to form an organic solution thereof; (b) hydrolysing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20°C to -50°C under an inert gas pressurised at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60°C to 100°C under an inert gas pressurised at 1,000 to 3,000 Pa.
Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula
wherein R' and R 2 are each selected from alkyl and phenyl (preferably methyl or ethyl), and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.
摘要翻译：具有通式A的低级烷基聚倍半硅氧烷... ... worin R是低级烷基，优选为CH 3或C 2 H 5，n为约10,000，通过（a）在以溶解的低级烷基的三官能硅烷制备等于约50的整数在-20℃至-50℃的温度下有机溶剂以形成在其有机溶液：（b）以在-20℃的温度下滴加水进入有机溶液至-50℃水解低级烷基硅烷的三官能在1000加压至3000帕的惰性气体下℃; 和（c）逐渐在1000加压至3000帕的惰性气体下，水相位于其下方高达60℃至100℃的温度下一起加热的有机溶液。 ... 因此，扁平浮出水面具有通式甲硅烷基化的organopolysilsesquioxane绝缘层... ... worin - [R <1>和R <2>由烷基和苯基（优选甲基或乙基），每个选择，并且 n为等于约50的整数至约2,000，优选约50至约500，通过施加到所述聚合物的有机溶液形成在具有其上在高度分段差的电路板; 蒸发溶剂; 和熔化聚合物扁平化聚合物的表面并固化所述聚合物。

5. 发明公开

EP0163538A3 Pattern-forming material and its production and use 失效
标题翻译：图案形成材料及其生产和使用
公开(公告)号：EP0163538A3
公开(公告)日：1986-09-03
申请号：EP85303811
申请日：1985-05-30
申请人： FUJITSU LIMITED
发明人： Fukuyama, Shun-ichi , Yoneda, Yasuhiro , Miyagawa, Masashi , Nishii, Kota
IPC分类号： G03F07/10
CPC分类号： G03F7/0757 , Y10S438/948
摘要： A novel high-energy radiation-sensitive pattern-forming sist material consisting of polysilsesquioxane having no 'droxyl groups in its molecule. The pattern-forming mate- il of this invention has an improved sensitivity to high- ergy radiation exposure, a high resistance to dry etching, a gh resolution capability, and an improved thermal stability.

6. 发明授权

EP0481715B1 Injection moulding of plastics housings 无效
标题翻译：塑料外壳的注射成型
公开(公告)号：EP0481715B1
公开(公告)日：1996-02-28
申请号：EP91309463.7
申请日：1991-10-15
申请人： FUJITSU LIMITED , FUJITSU KASEI LTD.
发明人： Adachi, Katsura , Usui, Makoto , Nishii, Kota , Muraya, Takashi , Kobayashi, Toshihiro , Tamura, Kazuyuki , Sato, Junichi
IPC分类号： B29C45/00 , B29C45/26
CPC分类号： H05K5/0008 , B29C45/00 , B29C45/26

7. 发明公开

EP0406911A1 Process for preparation of polysilsesquioxane 失效
标题翻译： Verfahren zur Herstellung von Polysilsesquioxanen。
公开(公告)号：EP0406911A1
公开(公告)日：1991-01-09
申请号：EP90114892.4
申请日：1985-10-31
申请人： FUJITSU LIMITED
发明人： Fukuyama, Shun-ichi, Fujitsu Atsusgi-ryo, 3-10 , Yoneda, Yasuhiro , Miyagawa, Masashi , Nishii, Kota , Matsuura, Azuma
IPC分类号： C08G77/06
CPC分类号： H01L21/02137 , C08G77/06 , H01B3/46 , H01L21/02282 , H01L21/3122 , H01L21/4803 , H01L21/481 , H01L23/49894 , H01L2924/0002 , H05K3/4676 , Y10S428/90 , Y10S428/901 , Y10T428/31663 , Y10T428/31678 , H01L2924/00
摘要： A process for preparation of polysilsesquioxane having a general formula
wherein R is CH₃ or C₂H₅ , and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving methyl or ethyl trifunctional silane in an organic solvent at a temperature of -20°C to -50°C to form an organic solution thereof; (b) hydrolyzing the trifunctional silane by dropping water into the organic solution at a temperature of -20°C to -50°C under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60°C to 100°C under an inert gas pressurized at 1,000 to 3,000 Pa.
摘要翻译：一种制备具有通式的聚倍半硅氧烷的方法，其中R为CH 3或C 2 H 5，n为等于约50至约10,000的整数，其通过以下步骤制备：（a）将甲基或乙基三官能硅烷溶于有机溶剂中温度为-20℃至-50℃以形成其有机溶液; （b）在加压至1000〜3000Pa的惰性气体下，在-20℃至-50℃的温度下将水滴入有机溶液中，水解三官能硅烷; 和（c）在加压至1000〜3000Pa的惰性气体下，将有机溶液与位于其中的水相一起逐渐加热至60℃至100℃的温度。

8. 发明授权

EP0163538B1 Pattern-forming material and its production and use 失效
标题翻译：图案形成材料及其生产和使用
公开(公告)号：EP0163538B1
公开(公告)日：1989-11-23
申请号：EP85303811.5
申请日：1985-05-30
申请人： FUJITSU LIMITED
发明人： Fukuyama, Shun-ichi , Yoneda, Yasuhiro , Miyagawa, Masashi , Nishii, Kota
IPC分类号： G03F7/10
CPC分类号： G03F7/0757 , Y10S438/948

9. 发明授权

EP0406911B1 Process for preparation of polysilsesquioxane 失效
标题翻译：制备多晶硅的方法
公开(公告)号：EP0406911B1
公开(公告)日：1993-07-07
申请号：EP90114892.4
申请日：1985-10-31
申请人： FUJITSU LIMITED
发明人： Fukuyama, Shun-ichi, Fujitsu Atsusgi-ryo, 3-10 , Yoneda, Yasuhiro , Miyagawa, Masashi , Nishii, Kota , Matsuura, Azuma
IPC分类号： C08G77/06
CPC分类号： H01L21/02137 , C08G77/06 , H01B3/46 , H01L21/02282 , H01L21/3122 , H01L21/4803 , H01L21/481 , H01L23/49894 , H01L2924/0002 , H05K3/4676 , Y10S428/90 , Y10S428/901 , Y10T428/31663 , Y10T428/31678 , H01L2924/00

10. 发明授权

EP0198976B1 Process for formation of insulating layer of silylated polysilsesquioxane on electronic circuit board 失效
标题翻译：在电子电路板上形成SILYLATED POLYSILSESQUIOXANE绝缘层的工艺
公开(公告)号：EP0198976B1
公开(公告)日：1993-01-27
申请号：EP85307905.1
申请日：1985-10-31
申请人： FUJITSU LIMITED
发明人： Fukuyama, Shun-ichi , Yoneda, Yasuhiro , Miyagawa, Masashi , Nishii, Kota , Matsuura, Azuma
IPC分类号： C08G77/06 , H01B3/46
CPC分类号： H01L21/02137 , C08G77/06 , H01B3/46 , H01L21/02282 , H01L21/3122 , H01L21/4803 , H01L21/481 , H01L23/49894 , H01L2924/0002 , H05K3/4676 , Y10S428/90 , Y10S428/901 , Y10T428/31663 , Y10T428/31678 , H01L2924/00

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