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1. 发明公开

EP0685881A1 Linewidth control apparatus and method 失效
标题翻译： Linienbreite-Kartonstruktur和Methode。
公开(公告)号：EP0685881A1
公开(公告)日：1995-12-06
申请号：EP95303639.9
申请日：1995-05-30
申请人： AT&T Corp.
发明人： Chew, Hongzong , Cuthbert, John David , Herring, Hamlet , Ryan, John Louis , Sun, Robert Ching-I , Wolf, Thomas Michael , Wroge, Daniel Mark
IPC分类号： H01L21/66
CPC分类号： G03F7/70625 , G03F7/70658 , H01L22/34
摘要： Linewidth control features having integral transistors are disclosed. Optical and electrical measurements of the linewidth control feature and its associated transistor may be correlated thereby providing a method of improving production processes.
摘要翻译：公开了具有整体晶体管的线宽控制特征。线宽控制特征及其相关晶体管的光学和电学测量可以相关联，从而提供改进生产过程的方法。

2. 发明公开

EP0420489A2 Compensation of lithographic and etch proximity effects 有权转让
标题翻译： Kompensation von lithographischen undÄtznäheeffekten。
公开(公告)号：EP0420489A2
公开(公告)日：1991-04-03
申请号：EP90310242.4
申请日：1990-09-19
申请人： AT&T Corp.
发明人： Eisenberg, Juli Hong , Fritzinger, Larry Bruce , Fu, Chong-Cheng , Kook, Taeho , Wolf, Thomas Michael
IPC分类号： G03F7/20
CPC分类号： G03F7/20 , Y10S438/941 , Y10S438/948
摘要： In the manufacture of integrated-circuit devices, patterned features are made on a substrate by etching a deposited layer. The pattern comprises features which are closely spaced, as well as others which are more isolated. Etching is in approximate conformance with a lithographically defined resist pattern which in turn is in approximate conformance with a desired pattern. A processing parameter such as, e.g., resist layer thickness is chosen such that an etched pattern is obtained which approximates a desired pattern more closely than a lithographically defined resist pattern.
摘要翻译：在集成电路器件的制造中，通过蚀刻沉积层在衬底上形成图案化特征。该图案包括紧密间隔的特征，以及更孤立的其他特征。蚀刻大致符合光刻定义的抗蚀剂图案，其又与所需图案大致一致。选择诸如抗蚀剂层厚度的处理参数，使得获得蚀刻图案，其近似于光刻定义的抗蚀剂图案的期望图案。

3. 发明公开

EP0136130A2 Method of making articles using gas functionalized plasma developed layer 有权
标题翻译：一种用于使用活性气体层用等离子体发展的对象的制造过程。
公开(公告)号：EP0136130A2
公开(公告)日：1985-04-03
申请号：EP84306149.0
申请日：1984-09-07
申请人： AT&T Corp.
发明人： Stillwagon, Larry Edward , Taylor, Gary Newton , Venkatesan, Thirumalai Nallan Chakravarthy , Wolf, Thomas Michael
IPC分类号： G03F7/26
CPC分类号： G03F7/36 , G03F7/265
摘要： This invention concerns a method of making articles by the use of a resist comprising an organic layer, developed by a plasma atmosphere, for pattern delineation. The resist is formed by sorption of an inorganic-containing gas (MR) into an organic material. The development of the resist occurs by exposure to a plasma (e.g. oxygen reactive ion etching) that forms a protective compound (MY) (e.g. a metal oxide) selectively in the resist. The selected regions can be defined by patterning radiation of various types, including visible, ultraviolet, electron beam and ion beam. In an alternative embodiment, the selected regions are defined by an overlying resist, with the gas sorption protecting the unterlying layer in a bilevel resist. The protective compound can protect the organic resist layer during etching of any underlying inorganic layer, such as metal, silicide, oxide, nitride, etc.
摘要翻译：本发明涉及通过使用有机层的抗蚀剂，其包含由等离子体气氛开发的制造制品，对于圈定图案的方法。通过含有无机气体（MR）的吸收形成于有机材料中的抗蚀剂。的发展抵抗发生通过暴露于等离子体（例如氧反应离子蚀刻）那样的形式选择性地在抗蚀剂的保护性化合物（MY）（例如金属氧化物）。所选择的区域可以通过图案化的各种类型，包括可见光，紫外线，电子束和离子束的辐射来定义。在一个替代实施方式中，所选择的区域由在上覆限定抗蚀剂，与气体吸附保护在二层的unterlying层抗蚀剂。保护性化合物可以保护有机抗蚀剂层下面的任何无机层，颜色的蚀刻时：如金属，硅化物，氧化物，氮化物等。

4. 发明公开

EP0420489A3 Compensation of lithographic and etch proximity effects 有权转让
标题翻译：光刻和蚀刻接近效应的补偿
公开(公告)号：EP0420489A3
公开(公告)日：1992-04-15
申请号：EP90310242.4
申请日：1990-09-19
申请人： AT&T Corp.
发明人： Eisenberg, Juli Hong , Fritzinger, Larry Bruce , Fu, Chong-Cheng , Kook, Taeho , Wolf, Thomas Michael
IPC分类号： G03F7/20
CPC分类号： G03F7/20 , Y10S438/941 , Y10S438/948
摘要： In the manufacture of integrated-circuit devices, patterned features are made on a substrate by etching a deposited layer. The pattern comprises features which are closely spaced, as well as others which are more isolated. Etching is in approximate conformance with a lithographically defined resist pattern which in turn is in approximate conformance with a desired pattern. A processing parameter such as, e.g., resist layer thickness is chosen such that an etched pattern is obtained which approximates a desired pattern more closely than a lithographically defined resist pattern.

5. 发明授权

EP0136130B1 Method of making articles using gas functionalized plasma developed layer 有权
标题翻译：使用气体功能化等离子体发生层制备文章的方法
公开(公告)号：EP0136130B1
公开(公告)日：1989-12-06
申请号：EP84306149.0
申请日：1984-09-07
申请人： AT&T Corp.
发明人： Stillwagon, Larry Edward , Taylor, Gary Newton , Venkatesan, Thirumalai Nallan Chakravarthy , Wolf, Thomas Michael
IPC分类号： G03F7/26
CPC分类号： G03F7/36 , G03F7/265

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