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21. 发明公开

EP2813467A1 INORGANIC POLYSILAZANE RESIN 有权转让
标题翻译：无机聚硅氧烷树脂
公开(公告)号：EP2813467A1
公开(公告)日：2014-12-17
申请号：EP13746247.9
申请日：2013-02-01
申请人： AZ Electronic Materials (Luxembourg) S.à.r.l.
发明人： FUJIWARA, Takashi , GROTTENMUELLER, Ralf , KANDA, Takashi , NAGAHARA, Tatsuro
IPC分类号： C01B21/082 , H01L21/316
CPC分类号： C01B21/087 , C01B33/08 , C01B33/126 , C08G77/62 , C09D1/00 , C09D183/16 , C23C18/1212 , C23C18/122 , C23C18/1225 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02323 , H01L21/02326 , H01L21/02337 , Y10T428/31663
摘要： An inorganic polysilazane resin of the present invention has a Si/N ratio (i.e. a ratio of contained silicon atoms to contained nitrogen atoms) of 1.30 or more. The inorganic polysilazane resin having such a high Si content can be produced by, for example, a method in which an inorganic polysilazane compound containing both Si-NH and Si-Cl is heated to react NH with Cl, a method in which a silazane oligomer (polymer) that leaves no Si-Cl bond is synthesized and a dihalosilane is added to the synthesized silazane oligomer (polymer) to perform a thermal reaction, and the like. A siliceous film can be formed by, for example, applying a coating composition containing the inorganic polysilazane resin onto a base plate and then dried and the dried product is then oxidized by bringing the dried product into contact with water vapor or hydrogen peroxide vapor and water vapor under heated conditions.
摘要翻译：本发明的无机聚硅氮烷树脂具有1.30以上的Si / N比（即所含硅原子与所含氮原子的比率）。 Si含量高的无机聚硅氮烷树脂可以通过例如将含有Si-NH和Si-Cl两者的无机聚硅氮烷化合物加热使NH与Cl反应的方法，或者将硅氮烷低聚物（聚合物），并将二卤硅烷加入到合成的硅氮烷低聚物（聚合物）中以进行热反应等。例如，可以通过将含有无机聚硅氮烷树脂的涂料组合物涂布到基板上并干燥，然后通过使干燥产品与水蒸气或过氧化氢蒸汽和水接触来氧化干燥产物来形成硅质膜蒸气在加热条件下。

22. 发明授权

EP1265276B1 METHOD FOR FORMING DIELECTRIC FILM 有权
标题翻译：方法的介电薄膜教育
公开(公告)号：EP1265276B1
公开(公告)日：2011-06-22
申请号：EP01912316.5
申请日：2001-03-13
申请人： Ohmi, Tadahiro
发明人： OHMI, Tadahiro , SUGAWA, Shigetoshi, Graduate School of Engineering, Tohoku University
IPC分类号： H01L21/316 , H01L21/318 , H01L29/78 , H01L29/788 , H01L29/792 , H01L21/8247
CPC分类号： H01L21/31641 , C23C8/02 , C23C8/36 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02323 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3144 , H01L21/31612 , H01L21/31637 , H01L21/31662 , H01L21/3185 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L29/42324
摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

23. 发明公开

EP1321974A4 POROUS SILICEOUS FILM HAVING LOW PERMITTIVITY, SEMICONDUCTOR DEVICES AND COATING COMPOSITION 有权
标题翻译：多孔低介电常数硅，半导体器件和涂料组合物
公开(公告)号：EP1321974A4
公开(公告)日：2009-02-25
申请号：EP01958571
申请日：2001-08-28
申请人： AZ ELECTRONIC MATERIALS USA
发明人： AOKI TOMOKO , SHIMIZU YASUO
IPC分类号： C08L33/06 , H01L21/316 , C01B33/12 , C08L83/16 , C09D1/00 , C09D133/06 , C09D183/16 , H01L21/768
CPC分类号： H01L21/02126 , C09D183/16 , H01L21/02203 , H01L21/02222 , H01L21/02282 , H01L21/02323 , H01L21/02337 , H01L21/31695 , Y02P20/125
摘要： A porous siliceous film which stably exhibits a low permittivity and is so excellent in both mechanical strengths and various chemical resistances as to withstand CMP and other up-to-date fabrication processes for integrated circuits and thus suitable for an interlayer dielectric film. This film can be formed by firing a coating of a composition comprising a polyalkylsilazane and a polyacrylate ester or a polymethacrylate ester and is characterized by a relative permittivity below 2.5.

24. 发明授权

EP1061156B1 Method of post-deposition treating a carbon-containing layer on a substrate 有权
标题翻译：一种用于沉积的含碳层的衬底上后处理过程
公开(公告)号：EP1061156B1
公开(公告)日：2005-12-28
申请号：EP00109917.5
申请日：2000-05-10
申请人： APPLIED MATERIALS, INC.
发明人： Huang, Judy H.
IPC分类号： C23C16/56 , C23C16/32 , H01L21/3105 , C23C14/06
CPC分类号： H01L21/02126 , C23C16/325 , C23C16/56 , H01L21/02211 , H01L21/02274 , H01L21/02323 , H01L21/0234 , H01L21/3105 , H01L21/314 , H01L21/3146 , H01L21/31633

25. 发明公开

EP1553624A1 Silicon-Germanium SOI structure and method for production thereof 审中-公开
标题翻译：硅锗 - SOI-Struktur und deren Herstellungsverfahren
公开(公告)号：EP1553624A1
公开(公告)日：2005-07-13
申请号：EP04029852.3
申请日：2004-12-16
申请人： Siltronic AG
发明人： Brunner, Josef, Dr. , Deai, Hiroyuki , Ikari, Atsushi, Dr. , Grassl, Martin, Dr. , Matsumura, Atsuki, Dr. , von Ammon, Wilfried, Dr.
IPC分类号： H01L21/762 , H01L21/20 , H01L21/265 , H01L21/316 , H01L29/165 , H01L29/36
CPC分类号： H01L21/76256 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02323 , H01L21/02351 , H01L21/26533 , H01L21/31658 , H01L21/76243
摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.
摘要翻译：以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层作为第三层的热氧化和变薄的结果。

26. 发明公开

EP1265279A4 FLASH MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR FORMING DIELECTRIC FILM 有权
标题翻译：闪存存储器模块和方法用于形成介电薄膜制备和方法
公开(公告)号：EP1265279A4
公开(公告)日：2004-11-24
申请号：EP01912317
申请日：2001-03-13
申请人： OHMI TADAHIRO
发明人： OHMI TADAHIRO , SUGAWA SHIGETOSHI
IPC分类号： C23C8/02 , C23C8/36 , H01L21/31 , H01L21/3105 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/336 , H01L21/8238 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L29/423 , H01L29/792 , H01L29/788
CPC分类号： H01L21/31641 , C23C8/02 , C23C8/36 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02323 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3144 , H01L21/31612 , H01L21/31637 , H01L21/31662 , H01L21/3185 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L29/42324
摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

27. 发明公开

EP0025129A2 Verfahren zur Herstellung von Isolationsbereichen in Silicium 失效
标题翻译：在Silicium的Verfahren zur Herstellung von Isolationsbereichen。
公开(公告)号：EP0025129A2
公开(公告)日：1981-03-18
申请号：EP80104760.6
申请日：1980-08-12
申请人： International Business Machines Corporation
发明人： Lever, Reginald Frank , Mauer, John Lester , Michel, Alwin Earl , Rothman, Laura Beth
IPC分类号： H01L21/76 , H01L21/312 , H01L21/316
CPC分类号： H01L21/02126 , H01L21/02164 , H01L21/02282 , H01L21/02323 , H01L21/02351 , H01L21/3121 , H01L21/316 , H01L21/76229 , Y10S148/131
摘要： Bei dem Verfahren zur Herstellung von Isolationsbereichen in Silicium werden tiefe, breite Gräben in die planare Oberfläche eines Siliciumsubstrats geätzt; eine dünne SiO 2 -Schicht auf der planaren Oberfläche des Substrats und auf den Oberflächen der Gräben gebildet; eine Glasharzschicht auf die planare Oberfläche des Substrats aufgetragen und die Gräben mit Glasharz ausgefüllt und ein Teil des Glasharzes von der planaren Oberfläche des Substrats mittels Schleudern entfernt. Nach dem Härten des Substrats erfolgt eine Bestrahlung des Glasharzes in den Gräben mit Elektronenstrahlen, eine Entwicklung mit Lösungsmittel und Erhitzen des Substrats in Sauerstoffatmosphäre zur Umwandlung des Glasharzes in den Gräben in Siliciumdioxid. Um eine planare Oberfläche zu erhalten, wird eine Siliciumdioxidschicht auf die Oberfläche des Substrats aufgetragen und diese anschließend biszum Siliciumsubstratwiederabgetragen.
Das Verfahren wird in integrierten Schaltungen verwendet, um Schaltungselementevoneinanderzu isolieren.
摘要翻译：一种用于在硅半导体衬底的平面表面中提供深宽二氧化硅填充沟槽的平面深氧化物隔离工艺，所述方法包括以下步骤：（a）在硅衬底的平面表面中形成深宽沟槽; （b）在硅衬底的平面表面和所述深宽沟槽的暴露的硅表面上形成二氧化硅薄层; （c）将树脂玻璃（聚硅氧烷）施加到所述深宽沟槽的所述半导体衬底的平面上; （d）在基板的平面上脱出树脂玻璃的至少一部分; （e）在低温下烘烤基材; （f）将包含在基底的深宽沟槽内的树脂玻璃暴露于电子束的能量; （g）在溶剂中显影所述基板上所含的树脂玻璃; （h）在氧气中加热所述衬底以将包含在所述深宽沟槽内的所述树脂玻璃转化为二氧化硅; （i）沉积二氧化硅层以在所述衬底的暴露表面上提供平面二氧化硅表面; 和（j）将暴露的二氧化硅表面平坦化到衬底的硅。一种用于在前面段落中提供的硅半导体衬底的平坦表面中提供深宽二氧化硅填充沟槽的平面深氧化物隔离工艺，其中执行以下步骤代替权利要求1的步骤i，所述步骤包括：（ i-1）应用树脂玻璃的第二薄层; 和（i-2）将所述树脂玻璃转化为二氧化硅。

28. 发明公开

EP3301705A1 METHOD FOR FLUOROCARBON FILM USED AS MIDDLE STOP LAYER FOR POROUS LOW K FILM 审中-公开
标题翻译：氟碳薄膜用作多孔低K薄膜的中间停留层的方法
公开(公告)号：EP3301705A1
公开(公告)日：2018-04-04
申请号：EP17192406.1
申请日：2017-09-21
申请人： Semiconductor Manufacturing International Corporation (Beijing) , Semiconductor Manufacturing International Corporation (Shanghai)
发明人： ZHOU, Ming
IPC分类号： H01L21/311 , H01L21/768 , H01L21/02
CPC分类号： H01L21/31122 , H01L21/02115 , H01L21/0212 , H01L21/02323 , H01L21/0234 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802 , H01L21/76811 , H01L21/76829 , H01L21/76877 , H01L23/5226 , H01L23/528 , H01L23/53209 , H01L23/53295
摘要： A method for manufacturing an interconnect structure includes providing a metal interconnect layer, forming a first dielectric layer on the metal interconnect layer, forming a fluorocarbon layer on the first dielectric layer, forming a second dielectric layer on the fluorocarbon layer, and performing an etch process on the second dielectric layer using the fluorocarbon layer as an etch stop mask to form an opening. The interconnect structure thus formed has an improved uniformity and reduced parasitic capacitance.
摘要翻译：用于制造互连结构的方法包括：提供金属互连层;在金属互连层上形成第一电介质层;在第一电介质层上形成氟碳层;在氟碳层上形成第二电介质层;以及执行蚀刻工艺在第二电介质层上使用氟碳化合物层作为蚀刻停止掩模以形成开口。这样形成的互连结构具有改善的均匀性和降低的寄生电容。

29. 发明授权

EP2721634B1 PROCÉDÉ DE PASSIVATION CHIMIQUE D'UNE SURFACE D'UN PRODUIT DE MATÉRIAU SEMI-CONDUCTEUR III-V, ET PRODUIT OBTENU PAR UN TEL PROCÉDÉ 有权
标题翻译：化学钝化III-V族半导体材料产品表面的方法和通过这种方法获得的产品
公开(公告)号：EP2721634B1
公开(公告)日：2018-01-03
申请号：EP12731132.2
申请日：2012-06-12
申请人： Centre National de la Recherche Scientifique (C.N.R.S.) , Ecole Polytechnique , Université de Versailles Saint-Quentin-en-Yvelines
发明人： ETCHEBERRY, Arnaud , GONCALVES, Anne-Marie , MATHIEU, Charles , VIGNERON, Jacky , MEZAILLES, Nicolas
IPC分类号： H01L21/306 , H01L21/02
CPC分类号： H01L21/3228 , H01L21/02118 , H01L21/02282 , H01L21/02323 , H01L21/306 , H01L29/0607

30. 发明公开

EP3087613A4 TECHNIQUES FOR TRENCH ISOLATION USING FLOWABLE DIELECTRIC MATERIALS 审中-公开
标题翻译： TECHNIKEN ZUR GRABENISOLATION MITFLIESSFÄHIGENDIELEKTRISCHEN MATERIALIEN
公开(公告)号：EP3087613A4
公开(公告)日：2017-07-26
申请号：EP14875582
申请日：2014-11-19
申请人： INTEL CORP
发明人： JHAVERI RITESH , LUCE JEANNE L , PARK SANG-WON , HANKEN DENNIS G
IPC分类号： H01L29/78 , H01L21/02 , H01L21/336 , H01L21/762 , H01L21/8234 , H01L29/06 , H01L29/66
CPC分类号： H01L21/76224 , H01L21/02164 , H01L21/02219 , H01L21/02222 , H01L21/02274 , H01L21/02323 , H01L21/02326 , H01L21/02337 , H01L21/02343 , H01L21/02345 , H01L21/823431 , H01L29/0649 , H01L29/66795 , H01L29/785
摘要： Techniques are disclosed for providing trench isolation of semiconductive fins using flowable dielectric materials. In accordance with some embodiments, a flowable dielectric can be deposited over a fin-patterned semiconductive substrate, for example, using a flowable chemical vapor deposition (FCVD) process. The flowable dielectric may be flowed into the trenches between neighboring fins, where it can be cured in situ, thereby forming a dielectric layer over the substrate, in accordance with some embodiments. Through curing, the flowable dielectric can be converted, for example, to an oxide, a nitride, and/or a carbide, as desired for a given target application or end-use. In some embodiments, the resultant dielectric layer may be substantially defect-free, exhibiting no or an otherwise reduced quantity of seams/voids. After curing, the resultant dielectric layer can undergo wet chemical, thermal, and/or plasma treatment, for instance, to modify at least one of its dielectric properties, density, and/or etch rate.
摘要翻译：公开了使用可流动介电材料来提供半导体鳍的沟槽隔离的技术。根据一些实施例，可流动电介质可例如使用可流动化学气相沉积（FCVD）工艺沉积在鳍状物图案化的半导体衬底上。根据一些实施例，可流动电介质可以流入相邻鳍之间的沟槽中，其中它可以原位固化，由此在衬底上形成电介质层。通过固化，根据给定的目标应用或最终用途的需要，可流动的电介质可以例如转化为氧化物，氮化物和/或碳化物。在一些实施例中，所得的电介质层可以基本上没有缺陷，没有表现出或减少接缝/空隙的量。在固化之后，例如，所得介电层可经受湿化学处理，热处理和/或等离子处理，以改变其介电性质，密度和/或蚀刻速率中的至少一个。

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