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1. 发明公开

EP1487010A3 SOI substrate, semiconductor substrate, and method for production thereof 审中-公开
标题翻译： SOI衬底，半导体衬底及其制造方法
公开(公告)号：EP1487010A3
公开(公告)日：2005-04-13
申请号：EP04013119.5
申请日：2004-06-03
申请人： Siltronic AG
发明人： Sasaki, Tsutomu , Takayama, Seiji , Matsumura, Atsuki, Dr.
IPC分类号： H01L21/76 , H01L21/265 , H01L21/762
摘要： Problem: To provide a method for commercially producing by the SIMOX technique a perfect partial SOI structure avoiding exposure of an buried oxide film through the surface thereof and forming no step between an SOI region and a non-SOI region. Means for solution of the problem: A method for the production of an SOI substrate, comprising a step of forming on the surface of a semiconductor substrate made of a silicon single crystal a protective film designated to serve as a mask for ion implantation, a step of forming an opening part of a stated pattern in the protective film, a step of implanting oxygen ions to the surface of the semiconductor substrate in a direction not perpendicular thereto, and a step of giving a heat treatment to the semiconductor substrate thereby forming an buried oxide film in the semiconductor substrate, characterized by inducing at the step of implanting oxygen ions to the surface of the semiconductor substrate the impartation of at least two angles to be formed between the projection of the flux of implantation of oxygen ions and a specific azimuth of the main body of the substrate.
摘要翻译：问题：提供一种通过SIMOX技术商业化生产完全部分SOI结构的方法，避免掩埋氧化膜通过其表面暴露，并且在SOI区域和非SOI区域之间不形成台阶。用于解决问题的手段：一种制造SOI衬底的方法，包括以下步骤：在由单晶硅制成的半导体衬底的表面上形成被指定用作用于离子注入的掩模的保护膜;步骤在所述保护膜中形成规定图案的开口部的工序;向所述半导体基板的与所述半导体基板的表面不垂直的方向注入氧离子的工序;以及对所述半导体基板进行热处理而形成埋入部的工序其特征在于在将氧离子注入到半导体衬底的表面上的步骤中引起在氧离子的注入通量的投影与特定的方位角之间形成的至少两个角度，基材的主体。

2. 发明公开

EP1553624A1 Silicon-Germanium SOI structure and method for production thereof 审中-公开
标题翻译：硅锗 - SOI-Struktur und deren Herstellungsverfahren
公开(公告)号：EP1553624A1
公开(公告)日：2005-07-13
申请号：EP04029852.3
申请日：2004-12-16
申请人： Siltronic AG
发明人： Brunner, Josef, Dr. , Deai, Hiroyuki , Ikari, Atsushi, Dr. , Grassl, Martin, Dr. , Matsumura, Atsuki, Dr. , von Ammon, Wilfried, Dr.
IPC分类号： H01L21/762 , H01L21/20 , H01L21/265 , H01L21/316 , H01L29/165 , H01L29/36
CPC分类号： H01L21/76256 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02323 , H01L21/02351 , H01L21/26533 , H01L21/31658 , H01L21/76243
摘要： Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.
摘要翻译：以低成本和高生产率生产具有含硅锗混合晶体的SOI结构的异质半导体结构。半导体衬底包括由添加有锗的硅形成的第一层，由氧化物形成并与第一层相邻的第二层，以及源自与第一层相同的源但具有富锗含量的锗的第三层作为第三层的热氧化和变薄的结果。

3. 发明授权

EP1487010B1 Method of manufacturing an SOI substrate 有权
标题翻译：一种制造SOI基板的制造方法
公开(公告)号：EP1487010B1
公开(公告)日：2007-08-29
申请号：EP04013119.5
申请日：2004-06-03
申请人： Siltronic AG
发明人： Sasaki, Tsutomu , Takayama, Seiji , Matsumura, Atsuki, Dr.
IPC分类号： H01L21/76 , H01L21/265 , H01L21/762
CPC分类号： H01L21/26533 , H01L21/26586 , H01L21/76243 , H01L21/76267
摘要： Problem: To provide a method for commercially producing by the SIMOX technique a perfect partial SOI structure avoiding exposure of an buried oxide film through the surface thereof and forming no step between an SOI region and a non-SOI region. Means for solution of the problem: A method for the production of an SOI substrate, comprising a step of forming on the surface of a semiconductor substrate made of a silicon single crystal a protective film designated to serve as a mask for ion implantation, a step of forming an opening part of a stated pattern in the protective film, a step of implanting oxygen ions to the surface of the semiconductor substrate in a direction not perpendicular thereto, and a step of giving a heat treatment to the semiconductor substrate thereby forming an buried oxide film in the semiconductor substrate, characterized by inducing at the step of implanting oxygen ions to the surface of the semiconductor substrate the impartation of at least two angles to be formed between the projection of the flux of implantation of oxygen ions and a specific azimuth of the main body of the substrate.

4. 发明公开

EP1487010A2 SOI substrate, semiconductor substrate, and method for production thereof 有权
标题翻译： Verfahren zur Herstellung eines SOI-Substrats
公开(公告)号：EP1487010A2
公开(公告)日：2004-12-15
申请号：EP04013119.5
申请日：2004-06-03
申请人： Siltronic AG
发明人： Sasaki, Tsutomu , Takayama, Seiji , Matsumura, Atsuki, Dr.
IPC分类号： H01L21/76 , H01L21/265
CPC分类号： H01L21/26533 , H01L21/26586 , H01L21/76243 , H01L21/76267
摘要： Problem: To provide a method for commercially producing by the SIMOX technique a perfect partial SOI structure avoiding exposure of an buried oxide film through the surface thereof and forming no step between an SOI region and a non-SOI region.
Means for solution of the problem: A method for the production of an SOI substrate, comprising a step of forming on the surface of a semiconductor substrate made of a silicon single crystal a protective film designated to serve as a mask for ion implantation, a step of forming an opening part of a stated pattern in the protective film, a step of implanting oxygen ions to the surface of the semiconductor substrate in a direction not perpendicular thereto, and a step of giving a heat treatment to the semiconductor substrate thereby forming an buried oxide film in the semiconductor substrate, characterized by inducing at the step of implanting oxygen ions to the surface of the semiconductor substrate the impartation of at least two angles to be formed between the projection of the flux of implantation of oxygen ions and a specific azimuth of the main body of the substrate.
摘要翻译：问题：提供一种通过SIMOX技术商业生产的完美部分SOI结构的方法，避免了通过其表面暴露掩埋氧化膜并且在SOI区域和非SOI区域之间形成步骤。解决问题的方案：一种用于制造SOI衬底的方法，包括在由硅单晶制成的半导体衬底的表面上形成指定用作离子掩模的保护膜的步骤在保护膜中形成所述图案的开口部的步骤，将氧离子注入到与半导体衬底的与其不垂直的方向的表面的步骤，以及对半导体衬底进行热处理的步骤从而在半导体衬底中形成掩埋氧化膜，其特征在于在将氧离子注入到半导体衬底的表面上的步骤中引入至少两个角度的形成：氧离子注入焊剂的投影和衬底主体的具体方位角。

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