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11. 发明公开

EP1895025A3 Semiconductor crystal, and method and apparatus of production 有权
标题翻译：半导体晶体和方法和装置及其制造
公开(公告)号：EP1895025A3
公开(公告)日：2008-05-21
申请号：EP07021740.1
申请日：1998-12-22
申请人： Sumitomo Electric Industries, Ltd.
发明人： Hashio, Katsushi , Sawada, Shin-ichi , Tatsumi, Masami
IPC分类号： C30B11/00 , C30B15/00 , C30B29/42
CPC分类号： C30B15/00 , C30B11/00 , C30B29/42 , Y10S117/90 , Y10T117/1024 , Y10T117/1096
摘要： An apparatus of producing a semiconductor crystal comprising a reactor tube having an open end in at least one end side, formed of any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and aluminum oxide, or of a composite material with any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, boron nitride, aluminum oxide, magnesium oxide, mullite, and carbon as a base, and having an oxidation-proof or airtight film formed on a surface of the base, heat means arranged around said reactor tube in the atmosphere, a flange attached at said open end to seal said reactor tube and a crucible mounted in said reactor tube to store a material of said semiconductor crystal.

12. 发明公开

EP1862570A4 CRYSTAL GROWING CRUCIBLE 有权
标题翻译： KRISTALLZÜCHTUNGSTIEGEL
公开(公告)号：EP1862570A4
公开(公告)日：2008-04-09
申请号：EP06715433
申请日：2006-03-09
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HAGI YOSHIAKI
IPC分类号： C30B11/00 , C30B29/42
CPC分类号： C30B11/002 , C30B29/42 , Y10S117/90 , Y10T117/10 , Y10T117/1036
摘要： Crystal growing crucible (1) of boron nitride including cylindrical distal end part (3) for disposing a seed crystal and cylindrical straight trunk part (5) provided above the distal end part for crystal growth and having a diameter larger than that of the distal end part, characterized in that the thickness (T1) of the distal end part and the thickness (T2) of the straight trunk part satisfy the requirement 0.1 mm = T2

13. 发明公开

EP1620583A1 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, LIGHT EMITTING DIODE AND PRODUCING METHOD THEREFOR 审中-公开
标题翻译：半导体基板，半导体器件及其制造方法发光二极管
公开(公告)号：EP1620583A1
公开(公告)日：2006-02-01
申请号：EP04730716.0
申请日：2004-04-30
申请人： CANON KABUSHIKI KAISHA
发明人： YONEHARA, Takao , SEKIGUCHI, Yoshinobu
IPC分类号： C30B29/42 , C30B25/22 , H01L21/20 , H01L33/00
CPC分类号： H01L21/76259 , C30B25/02 , C30B25/22 , C30B29/42 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02546 , H01L21/0262 , H01L21/02658 , H01L33/0079
摘要： A semiconductor substrate including a gallium arsenide layer is obtained by executing a step of preparing a first substrate having a separating layer constituted of germanium and a gallium arsenide layer on the separating layer, a step of preparing a bonded substrate by bonding the first substrate and a second substrate, and a step of dividing the bonded substrate at a portion of the separating layer.

14. 发明公开

EP1428912A3 Method of preparing a compound semiconductor crystal doped with carbon 有权
标题翻译：一种用于生产碳掺杂的化合物半导体晶体的制造方法
公开(公告)号：EP1428912A3
公开(公告)日：2004-06-23
申请号：EP04003550.3
申请日：1998-03-25
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Kawase, Tomohiro , Sawada, Shinichi , Tatsumi, Masami
IPC分类号： C30B29/42 , C30B27/00 , C30B11/12 , C30B11/00
CPC分类号： C30B29/42 , C30B11/06 , C30B11/12
摘要： There is provided a method of preparing a compound semiconductor crystal, allowing the compound semiconductor crystal to be doped with carbon in high reproducibility. The method includes the steps of sealing a semiconductor raw material and a boron oxide based substance in a gas-impermeable airtight vessel and increasing a temperature of said airtight vessel to melt said raw material and said boron oxide based substance in said airtight vessel and thereby form a melted material from said raw material; and decreasing said temperature of said airtight vessel to solidify said melted material and thereby grow said compound semiconductor crystal containing a resultant content of said carbon, selecting a partial pressure of a carbon oxide gas, and making said carbon oxide gas coexistent with said melted material, so that said resultant content of said carbon is dependent on said selected partial pressure of said carbon oxide gas. With this method, a compound semiconductor crystal with a carbon concentration of 0.1 X 10 15 cm -3 to 20 X 10 15 cm -3 is also prepared in high reproducibility.

15. 发明公开

EP1428912A2 Method of preparing a compound semiconductor crystal doped with carbon 有权
标题翻译：制备掺杂有碳的化合物半导体晶体的方法
公开(公告)号：EP1428912A2
公开(公告)日：2004-06-16
申请号：EP04003550.3
申请日：1998-03-25
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Kawase, Tomohiro , Sawada, Shinichi , Tatsumi, Masami
IPC分类号： C30B29/42 , C30B27/00 , C30B11/12 , C30B11/00
CPC分类号： C30B29/42 , C30B11/06 , C30B11/12
摘要： There is provided a method of preparing a compound semiconductor crystal, allowing the compound semiconductor crystal to be doped with carbon in high reproducibility. The method includes the steps of sealing a semiconductor raw material and a boron oxide based substance in a gas-impermeable airtight vessel and increasing a temperature of said airtight vessel to melt said raw material and said boron oxide based substance in said airtight vessel and thereby form a melted material from said raw material; and decreasing said temperature of said airtight vessel to solidify said melted material and thereby grow said compound semiconductor crystal containing a resultant content of said carbon, selecting a partial pressure of a carbon oxide gas, and making said carbon oxide gas coexistent with said melted material, so that said resultant content of said carbon is dependent on said selected partial pressure of said carbon oxide gas. With this method, a compound semiconductor crystal with a carbon concentration of 0.1 X 10 15 cm -3 to 20 X 10 15 cm -3 is also prepared in high reproducibility.
摘要翻译：提供了制备化合物半导体晶体的方法，使化合物半导体晶体以高重现性掺杂有碳。该方法包括以下步骤：在不透气的气密容器中密封半导体原料和氧化硼基物质，并升高所述气密容器的温度以熔化所述气密容器中的所述原料和所述氧化硼基物质，从而形成来自所述原材料的熔融材料; 并降低所述气密容器的所述温度以固化所述熔融材料，由此使包含所得碳含量的所述化合物半导体晶体生长，选择碳氧化物气体的分压，并使所述碳氧化物气体与所述熔化材料共存，使得所述碳的所述所得含量取决于所述选定的所述碳氧化物气体的分压。利用该方法，还以高重复性制备碳浓度为0.1×1015cm-3至20×1015cm-3的化合物半导体晶体。

16. 发明授权

EP0990717B1 GaAs single crystal substrate and epitaxial wafer using the same 有权
标题翻译： GaAs单晶衬底和使用其的外延晶片
公开(公告)号：EP0990717B1
公开(公告)日：2003-03-26
申请号：EP99113143.4
申请日：1999-07-07
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hagi, Yoshiaki, c/o Itami Works of Sumitomo E.Ind. , Nakai, Ryusuke, c/o Itami Works of Sumitomo E.Ind.
IPC分类号： C30B11/00 , C30B29/42
CPC分类号： H01L21/0262 , C30B11/00 , C30B29/42 , H01L21/02395 , H01L21/02463 , H01L21/02546 , Y10T428/265
摘要： A GaAs single crystal substrate and an epitaxial wafer using the same which suppress generation of slips when the epitaxial layer is grown and enable improvement of withstanding characteristic of devices can be obtained. A GaAs single crystal substrate has mean dislocation density in plane of at most 2 x 10 cm , carbon concentration of 2.5 to 20.0 x 10 cm , boron concentration of 2.0 to 20.0 x 10 cm , impurity concentration other than carbon and boron of at most 1 x 10 cm , EL2 concentration of 5.0 to 10.0 x 10 cm , resistivity of 1.0 to 5.0 x 10 OMEGA . cm and mean residual strain measured by photoelastic analysis of at most 1.0 x 10 .

17. 发明公开

EP1288342A2 Method of preparing group III-V compound semiconductor crystal 失效
标题翻译： Verfahren zur Herstellung eines III-V-Verbindungseinkristalles
公开(公告)号：EP1288342A2
公开(公告)日：2003-03-05
申请号：EP02026886.8
申请日：1997-04-24
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Kawase, Tomohiro, Itami Works of Sumitomo , Tatsumi, Masami, Itami Works of Sumitomo
IPC分类号： C30B11/00 , C30B29/40 , C30B29/42
CPC分类号： C30B11/10 , C30B27/00 , C30B29/40 , C30B29/42
摘要： A carbon doped group III-V compound semiconductor crystal has a diameter of not less than 80mm wherein the concentration of doped carbon is not less than 0.8 x 10 15 cm -3 . Said semiconductor crystal is prepared by the steps of: filling a crucible or a boat with a pre-synthesized III-V compound raw material, and boron oxide, melting said III-V compound raw material and boron oxide, and solidifying a melted compound material.
摘要翻译：碳掺杂III-V族化合物半导体晶体的直径不小于80mm，其中掺杂碳的浓度不小于0.8×10 15 cm -3。所述半导体晶体是通过以下步骤制备的：用预合成的III-V化合物原料填充坩埚或舟皿，和氧化硼，熔化所述III-V族化合物原料和氧化硼，并使熔融的化合物材料。

18. 发明公开

EP1147248A1 VORRICHTUNG ZUR HERSTELLUNG VON EINKRISTALLEN 有权
标题翻译：器具，用于产生单晶
公开(公告)号：EP1147248A1
公开(公告)日：2001-10-24
申请号：EP00922527.7
申请日：2000-03-16
申请人： Freiberger Compound Materials GmbH , FORSCHUNGSZENTRUM JÜLICH GMBH
发明人： SONNENBERG, Klaus , KÜSSEL, Eckhard , BÜNGER, Thomas , FLADE, Tilo , WEINERT, Berndt
IPC分类号： C30B11/00 , C30B29/42
CPC分类号： C30B29/40 , C30B11/003 , C30B29/42 , Y10T117/1068 , Y10T117/1076 , Y10T117/1088
摘要： The invention relates to a device for producing single crystals, for example gallium-arsenide single crystals having a large diameter. The device comprises a cylindrical heating system with a bottom heating element (2), a top heating element (3) and a jacket heating element (5). The heating surfaces of the bottom and top heating elements are significantly greater than the cross-sectional area of the single crystal to be produced. The reaction chamber further comprises an insulator (6) which is configured such that a radial heat flow is suppressed and a strictly axial heat flow over the full height of the reaction chamber is ensured between the top heating element (3) and the bottom heating element (2).

19. 发明公开

EP0971052A1 P-type GaAs single crystal and method for manufacturing the same 有权
标题翻译： P型GaAs-Einkristall和Verfahren zu seiner Herstellung
公开(公告)号：EP0971052A1
公开(公告)日：2000-01-12
申请号：EP99305407.1
申请日：1999-07-07
申请人： MITSUBISHI CHEMICAL CORPORATION
发明人： Fujisawa, Hideo c/o Mitsubishi Chemical Corp. , Katano, Kizuku c/o Mitsubishi Chemical Corp. , Yamamoto, Osamu c/o Mitsubishi Chemical Corp.
IPC分类号： C30B11/00 , C30B29/42
CPC分类号： C30B11/00 , C30B29/42
摘要： Disclosed are a P-type GaAs single crystal having an average dislocation density of 500 cm -2 or lower, and a manufacturing method therefor. The P-type GaAs single crystal is characterized by containing, as dopants, Si at an atomic concentration of from 1 x 10 17 to 1 x 10 19 cm -3 and Zn at an atomic concentration of from 2 x 10 18 to 6 x 10 19 cm -3 . Further, as another example, B is contained at an atomic concentration of from 1 x 10 17 to 1 x 10 20 cm -3 .
摘要翻译：公开了平均位错密度为500cm -2以下的P型GaAs单晶及其制造方法。 P型GaAs单晶的特征在于，以1×10 17至1×10 19 cm -3的原子浓度含有作为掺杂剂的Si，原子浓度为2× 10 18至10×10 19 cm -3。此外，作为另一个实例，B以1×10 17至1×10 20 cm -3的原子浓度包含。

20. 发明公开

EP0903427A1 APPARATUS AND METHOD FOR PRODUCING CRYSTALS BY THE CZOCHRALSKI METHOD AND CRYSTALS PRODUCED BY THIS METHOD 失效
标题翻译：装置及其制造方法晶体提拉，并通过这种方法产生的结晶
公开(公告)号：EP0903427A1
公开(公告)日：1999-03-24
申请号：EP97902656.4
申请日：1997-02-12
申请人： Shin-Etsu Handotai Co., Ltd.
发明人： SAKURADA, Masahiro, Shin-Etsu Handotai Co. Ltd , MIYAHARA, Yuichi, Takefu Plant , OHTA, Tomohiko, Shin-Etsu HandotaiCo. Ltd
IPC分类号： C30B15/00 , C30B29/06 , C30B29/08 , C30B29/40 , C30B29/42 , C30B29/44
CPC分类号： C30B15/14 , C30B29/06 , C30B29/08 , C30B29/40 , C30B29/42 , C30B29/44
摘要： A method and apparatus for producing crystals by the Czochralski method whereby the thermal history during crystal growth according to the CZ method can be controlled with ease and accuracy. The apparatus comprises a crucible for receiving a raw material, a heater for heating and melting the raw material, and a heat insulating cylinder disposed so as to surround the crucible and the heater, wherein a portion of the heat insulating cylinder that is located above an upper end of the heater is so configured that its inner diameter is larger than the outer diameter of the heater at its lower end, and that its inner diameter at its upper end is equal to or less than the inner diameter of the heater while its outer diameter is equal to or greater than the outer diameter of the heater. This apparatus is used to produce crystals and to control the temperature distribution inside the crystal producing apparatus or the thermal history of crystals.
摘要翻译：一种用于通过切克劳斯基方法，由此晶体生长gemäß到CZ法时的热历史可以容易和精确地控制生产的结晶方法和装置。该装置包括一个坩埚用于容纳剃须刀，用于加热的加热器和熔化原料，以及热绝缘圆筒配置成包围该坩埚和加热器，worin绝热圆柱体的一部分并位于高于加热器的上端被如此构造做它的内径大于在其下端处的加热器的外径大，并没有在其上端其内径比而它的外加热器的内径等于或小于直径等于或小于所述加热器的外径大。该装置用于产生晶体和控制晶体制造装置或晶体的热历史内部的温度分布。

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