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1. 发明公开

EP2771276A1 USE OF ALKALINE-EARTH METALS TO REDUCE IMPURITY INCORPORATION INTO A GROUP-III NITRIDE CRYSTAL 审中-公开
标题翻译：的使用碱性-FOR IN III族氮化物晶体还原杂质
公开(公告)号：EP2771276A1
公开(公告)日：2014-09-03
申请号：EP12844083.1
申请日：2012-10-24
申请人： The Regents of the University of California
发明人： PIMPUTKAR, Siddha , VON DOLLEN, Paul M. , SPECK, James S. , NAKAMURA, Shuji
IPC分类号： C01B21/06 , C30B7/00 , B01D9/00
CPC分类号： C30B7/105 , C30B29/403 , Y10T117/1096
摘要： Alkaline-earth metals are used to reduce impurity incorporation into a III nitride crystal grown using the ammonothermal method.

2. 发明公开

EP2725123A1 METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL AND AUTOCLAVE USED THEREFOR 审中-公开
标题翻译： VERFAHREN ZUR HERSTELLUNG EINES NITRID-EINKRISTALLS UND AUTOKLAVDAFÜR
公开(公告)号：EP2725123A1
公开(公告)日：2014-04-30
申请号：EP11868178.2
申请日：2011-06-23
申请人： Asahi Kasei Kabushiki Kaisha , Tohoku University
发明人： AOKI, Kensuke , YOSHIDA, Kazuo , NAKAMURA, Katsuhito , FUKUDA, Tsuguo
IPC分类号： C30B29/38 , C30B7/10
CPC分类号： C30B7/105 , C01B21/0632 , C30B29/406 , Y10T117/1096 , Y10T428/2982
摘要： There is provided a novel method for producing a nitride single crystal with both a rapid crystal growth rate and high crystal quality, as well as a novel autoclave that can be used in the method. The invention provides a method for producing a Ga-containing nitride single crystal by an ammonothermal method, comprising introducing at least a starting material, an acidic mineralizer and ammonia into an autoclave, and then growing a Ga-containing nitride single crystal under conditions wherein the temperature (T1) at the single crystal growth site is 600°C to 850°C, the temperature (T1) at the single crystal growth site and the temperature (T2) at the starting material feeder site are in the relationship T1 > T2, and the pressure in the autoclave is 40 MPa to 250 MPa, as well as an autoclave that can be used in the method.
摘要翻译：提供了一种用于生产具有快速晶体生长速率和高晶体质量的氮化物单晶的新颖方法，以及可用于该方法的新型高压釜。本发明提供了一种通过氨热法制备含Ga氮化物单晶的方法，包括将至少一种起始材料，酸性矿化剂和氨引入高压釜中，然后在其中使含Ga的氮化物单晶生长单晶生长部位的温度（T1）为600℃〜850℃，单晶生长部位的温度（T1）和原料供给部位的温度（T2）为T1> T2，并且高压釜中的压力为40MPa至250MPa，以及可用于该方法的高压釜。

3. 发明授权

EP1490537B1 HIGH PRESSURE HIGH TEMPERATURE GROWTH OF CRYSTALLINE GROUP III METAL NITRIDES 有权
标题翻译：选育在高压和晶III族金属氮化物的高温
公开(公告)号：EP1490537B1
公开(公告)日：2011-04-13
申请号：EP03709199.8
申请日：2003-02-21
申请人： GENERAL ELECTRIC COMPANY
发明人： D'EVELYN, Mark, Philip , WEBB, Steven, William , VAGARALI, Suresh, Shankarappa , KADIOGLU, Yavuz , PARK,Dong-Sil , CHEN, Zheng
IPC分类号： C30B9/00 , C30B29/40
CPC分类号： C30B29/403 , B82Y10/00 , B82Y30/00 , C30B7/00 , C30B9/00 , C30B29/406 , Y10T117/1052 , Y10T117/1096
摘要： A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material (106) and a source material (102) comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel (100); sealing the reaction vessel (100); heating the reaction vessel (100) to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.

4. 发明公开

EP1984544A2 SILICON CARBIDE FORMATION BY ALTERNATING PULSES 审中-公开
标题翻译：通过替代脉冲形成碳化硅
公开(公告)号：EP1984544A2
公开(公告)日：2008-10-29
申请号：EP07717395.3
申请日：2007-01-25
申请人： Caracal, Inc.
发明人： KORDINA, Olof Claes Erik
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12
CPC分类号： C30B25/00 , C30B25/14 , C30B25/165 , C30B29/36 , Y10T117/1096
摘要： A method of forming silicon carbide wherein silicon and carbon precursors are successively pulsed into a reactor in the gas phase. The precursors react to form silicon carbide before reaching the growth surface. A precursor will be preheated in the reaction chamber before reacting with the other precursor. The formed silicon carbide sublime then condenses on a growth surface.
摘要翻译：一种形成碳化硅的方法，其中硅和碳前体在气相中连续脉冲进入反应器。前体在到达生长表面之前反应形成碳化硅。前体将在与另一前体反应之前在反应室中预热。所形成的碳化硅升华然后冷凝在生长表面上。

5. 发明公开

EP1895025A2 Semiconductor crystal, and method and apparatus of production 有权
标题翻译： Verfahren und Vorrichtung zur Herstellung eines Halbleiterkristalls
公开(公告)号：EP1895025A2
公开(公告)日：2008-03-05
申请号：EP07021740.1
申请日：1998-12-22
申请人： Sumitomo Electric Industries, Ltd.
发明人： Hashio, Katsushi , Sawada, Shin-ichi , Tatsumi, Masami
IPC分类号： C30B11/00 , C30B15/00 , C30B29/42
CPC分类号： C30B15/00 , C30B11/00 , C30B29/42 , Y10S117/90 , Y10T117/1024 , Y10T117/1096
摘要： An apparatus of producing a semiconductor crystal comprising a reactor tube having an open end in at least one end side, formed of any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and aluminum oxide, or of a composite material with any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, boron nitride, aluminum oxide, magnesium oxide, mullite, and carbon as a base, and having an oxidation-proof or airtight film formed on a surface of the base, heat means arranged around said reactor tube in the atmosphere, a flange attached at said open end to seal said reactor tube and a crucible mounted in said reactor tube to store a material of said semiconductor crystal.
摘要翻译：一种制造半导体晶体的装置，包括在至少一端侧具有开口端的反应器管，由选自碳化硅，氮化硅，氮化铝和氧化铝中的任何一种材料形成，或者由复合材料具有选自碳化硅，氮化硅，氮化铝，氮化硼，氧化铝，氧化镁，莫来石和碳作为基底的任何一种材料的材料，并且在表面上形成有防氧化或气密的膜的基座，围绕所述反应器管设置在大气中的加热装置，在所述开口端附接的凸缘以密封所述反应器管和安装在所述反应器管中的坩埚以存储所述半导体晶体的材料。

6. 发明公开

EP1359000A4 EXTRA HIGH VOLTAGE GENERATOR 审中-公开
标题翻译：发电机FÜREXTRA HOHE SPANNUNGEN
公开(公告)号：EP1359000A4
公开(公告)日：2006-08-02
申请号：EP01272254
申请日：2001-12-14
申请人： SUMITOMO HEAVY INDUSTRIES
发明人： TADO MASASHI
IPC分类号： B01J3/06 , B30B11/00
CPC分类号： B30B11/007 , B01J3/067 , B30B11/004 , B30B15/026 , Y10T117/102 , Y10T117/1096
摘要： An extra high voltage generator, comprising vertically symmetrical upper and lower guide blocks (1, 2) having pyramidal slopes formed in the upper and lower surfaces thereof, wherein upper and lower base blocks (3, 5) are formed of vertically symmetrical upper and lower pyramidal portions and disposed at the center of a vertical pyramidal recessed part formed of the vertical pyramidal slopes of the vertical guide blocks (1, 2), and an upper pyramidal block (12) is disposed between the upper pyramidal slope of the upper guide block and a press frame (14).
摘要翻译：一种非常高的结构压力发生器，使得发电机的下引导块和上引导块各自构造成在底表面上形成锥形凹槽，并且在顶表面上精确对称地形成一个倒置金字塔形凹槽，它们的金字塔形斜面给出一个相同的倾斜角度，并且防止在高压下不通过扩大引导块和压力机而变形，但是通过使发电机的所有砧座的支撑条件均匀，砧座的位置可以容易地因此发电机能够将压力传递介质精确地加压成所需立方体的形状。下引导块和上导向块中的每一个在其底表面中具有锥形凹槽，并且在其顶表面中具有倒置的金字塔形凹部，并且相对于其水平中心平面对称。下基座和上基座块中的每一个具有较低的倒置金字塔形部分和上部金字塔形部分。上基座设置在上引导块的下锥形凹部的中心。上部向下金字塔形块体设置在上部引导块的压制框架和上部倒置金字塔形凹部之间。

7. 发明公开

EP0927777A1 Semiconductor crystal, and method and apparatus of production 有权
标题翻译： Verfahren und Vorrichtung zur Herstellung von Halbleiterkristallen
公开(公告)号：EP0927777A1
公开(公告)日：1999-07-07
申请号：EP98124552.5
申请日：1998-12-22
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hashio, Katsushi c/o Sumitomo Elect.Indust., Ltd. , Sawada, Shin-ichi c/o Sumitomo Elect.Indust., Ltd. , Tatsumi, Masami c/o Sumitomo Elect.Indust., Ltd.
IPC分类号： C30B11/00 , C30B15/00 , C30B29/42
CPC分类号： C30B15/00 , C30B11/00 , C30B29/42 , Y10S117/90 , Y10T117/1024 , Y10T117/1096
摘要： An apparatus and method of providing a large semiconductor crystal at a low cost are provided. The apparatus of producing a semiconductor crystal includes a reactor (1) having an open end at both end sides, formed of any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and aluminum oxide, or of a composite material with any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, boron nitride, aluminum oxide, magnesium oxide, mullite, and carbon as a base, and having an oxidation-proof or airtight film formed on the surface of the base, a kanthal heater (3) arranged around the reactor (1) in the atmosphere, a flange (9) attached at the open end to seal the reactor (1), and a crucible (2) mounted in the reactor (1) to store material of a semiconductor crystal. The material stored in the crucible (2) is heated and melted to form material melt (60). The material melt is solidified to grow a semiconductor crystal (50).
摘要翻译：提供了一种以低成本提供大半导体晶体的装置和方法。制造半导体晶体的装置包括：反应器（1），其在两端具有开口端，由选自碳化硅，氮化硅，氮化铝和氧化铝中的任何一种材料形成，或由复合材料具有选自碳化硅，氮化硅，氮化铝，氮化硼，氧化铝，氧化镁，莫来石和碳作为基底的任何一种材料的材料，并且在表面上形成防氧化或气密膜的基部，在大气中布置在反应器（1）周围的kanthal加热器（3），连接在开口端以密封反应器（1）的凸缘（9）和安装在反应器（1）中的坩埚（2） 1）存储半导体晶体的材料。储存在坩埚（2）中的材料被加热熔化以形成材料熔体（60）。材料熔体被固化以生长半导体晶体（50）。

8. 发明授权

EP0255327B1 Cubic boron nitride manufacture 失效
标题翻译：立方氮化硼制造
公开(公告)号：EP0255327B1
公开(公告)日：1991-06-19
申请号：EP87306632.8
申请日：1987-07-28
申请人： DE BEERS INDUSTRIAL DIAMOND DIVISION (PROPRIETARY) LIMITED
发明人： Hedges, Lesley Kay , Robertson, Stuart Hedley , Davies, Geoffrey John
IPC分类号： C30B29/38 , C30B9/00
CPC分类号： C30B9/00 , B01J3/062 , B01J2203/0645 , B01J2203/066 , B01J2203/068 , C30B29/403 , Y10T117/1096

9. 发明授权

EP0241187B1 A method of manufacturing a single crystal of BaPb1-xBix03 失效
标题翻译：一种制备BAPB1-XBIX03单晶的方法
公开(公告)号：EP0241187B1
公开(公告)日：1990-11-07
申请号：EP87302673.6
申请日：1987-03-27
申请人： SEIKO INSTRUMENTS INC. , Hirano, Shinichi
发明人： Hirano, Shinichi c/o 123 Meidai Yadacho Syukusha , Toyokuni, Ryo c/o Seiko Instruments Inc., , Kuroda, Hiroshi c/o Seiko Instruments Inc.
IPC分类号： C30B7/10 , C30B29/22
CPC分类号： C30B29/22 , C30B7/00 , C30B7/005 , Y10S117/918 , Y10S505/729 , Y10T117/1096

10. 发明公开

EP2771276A4 USE OF ALKALINE-EARTH METALS TO REDUCE IMPURITY INCORPORATION INTO A GROUP-III NITRIDE CRYSTAL 审中-公开
标题翻译：的使用碱性-FOR IN III族氮化物晶体还原杂质
公开(公告)号：EP2771276A4
公开(公告)日：2015-06-24
申请号：EP12844083
申请日：2012-10-24
申请人： UNIV CALIFORNIA
发明人： PIMPUTKAR SIDDHA , VON DOLLEN PAUL M , SPECK JAMES S , NAKAMURA SHUJI
IPC分类号： C01B21/06 , B01D9/00 , C30B7/00 , C30B7/10 , C30B29/40
CPC分类号： C30B7/105 , C30B29/403 , Y10T117/1096

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