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11. 发明公开

EP3454372A1 LIGHT EMITTING DIODE 有权
公开(公告)号：EP3454372A1
公开(公告)日：2019-03-13
申请号：EP17792825.6
申请日：2017-04-26
申请人： Seoul Viosys Co., Ltd.
发明人： OH, Se Hee , KIM, Hyun A , KIM, Jong Kyu , LIM, Hyoung Jin
IPC分类号： H01L27/15 , H01L33/48 , H01L33/36 , H01L33/52 , H01L33/10 , H01L33/02 , H01L25/075 , H01L33/60 , H01L33/40
摘要： A light emitting diode in accordance with an exemplary embodiment comprises a first light emitting cell and a second light emitting cell comprising an n-type semiconductor layer, and a p-type semiconductor layer, respectively ; reflection structures contacting the p-type semiconductor layers; a first contact layer in ohmic contact with the n-type semiconductor layer of the first light emitting cell; a second contact layer in ohmic contact with the n-type semiconductor layer of the second light emitting cell and connected to the reflection structure on the first light emitting cell; an n-electrode pad connected to the first contact layer; and a p-electrode pad connected to the reflection structure on the second light emitting cell, wherein the first light emitting cell and the second light emitting cell are isolated from each other, and wherein their outer side surfaces are inclined steeper than the inner sides. Therefore, a forward voltage may be lowered and light output may be improved.

12. 发明公开

EP4340049A3 LIGHT EMITTING DIODE CHIP 审中-实审
公开(公告)号：EP4340049A3
公开(公告)日：2024-05-15
申请号：EP24154569.8
申请日：2018-09-14
申请人： Seoul Viosys Co., Ltd.
发明人： OH, Se Hee , KIM, Jae Kwon , KIM, Jong Kyu , KIM, Hyun A , LEE, Joon Sup
IPC分类号： H01L33/46 , H01L33/44 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/60
CPC分类号： H01L33/405 , H01L33/382 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/46
摘要： A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip according to one embodiment includes; a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa including an active layer and a second conductivity type semiconductor layer, wherein the mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer; a side coating layer(s) covering a side surface of the mesa; and a reflection structure spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

13. 发明公开

EP4297105A2 CHIP SCALE PACKAGE LIGHT EMITTING DIODE 审中-实审
公开(公告)号：EP4297105A2
公开(公告)日：2023-12-27
申请号：EP23208095.2
申请日：2018-12-10
申请人： Seoul Viosys Co., Ltd.
发明人： KIM, Jong Kyu , KANG, Min Woo , OH, Se Hee , LIM, Hyoung Jin
IPC分类号： H01L33/40
摘要： A light emitting diode module, comprising a printed circuit board (1023), and a light emitting diode (1021) disposed on the substrate, the light emitting diode including a substrate (21), a first conductivity type semiconductor layer (23), a mesa (M) disposed on the first conductivity type semiconductor layer (23), and including an active layer (25) and a second conductivity type semiconductor layer (27), an ohmic contact layer (28) disposed on the mesa (M) and electrically connected to the second conductivity type semiconductor layer (27), a lower insulation layer (33) covering the mesa (M), and including at least one first opening (33a1) exposing the first conductivity type semiconductor layer (23) and a second opening (33a2), a first pad metal layer (35a) disposed on the lower insulation layer (33), and electrically connected to the first conductivity type semiconductor layer (23) through the at least one first opening (33a1), a second pad metal layer (35b) disposed on the lower insulation layer (33), and electrically connected to the ohmic contact layer (28) through the second opening (33a2), a upper insulation layer (37) covering the first and second pad metal layers (35a, 35b) and including first opening (37a) exposing the first pad metal layer (35a) and a second opening (37b) exposing the second pad metal layer (35b), a first bump pad (39a) disposed on the upper insulation (37), and electrically connected to the first pad metal layer (35a) through the first opening (37a) of the upper insulation layer(37), and a second bump pad (39b) disposed on the upper insulation (37), and electrically connected to the second pad metal layer (35b) through the second opening (37b) of the upper insulation layer(37), wherein the first pad metal layer (35a) includes a protrusion having an outer contact portion (35a1) that contacts the first conductivity type semiconductor layer (23) near the edge of the substrate (21), and wherein the first pad metal layer (35a) includes a region that has a wide width and a region that has a narrow width extending from thereof.

14. 发明公开

EP4145543A1 LIGHT EMITTING DIODE 审中-实审
公开(公告)号：EP4145543A1
公开(公告)日：2023-03-08
申请号：EP22203445.6
申请日：2017-04-26
申请人： Seoul Viosys Co., Ltd.
发明人： OH, Se Hee , KIM, Hyun A , KIM, Jong Kyu , LIM, Hyoung Jin
IPC分类号： H01L33/08 , H01L33/36 , H01L33/40 , H01L33/44 , H01L27/15 , H01L33/38 , H01L33/22 , H01L33/46
摘要： A light emitting diode comprising a first conductivity type semiconductor layer (323), a mesa (M) comprising a second conductivity type semiconductor layer (327) and an active layer (325), a first contact layer (335a) comprising an outer contact portion (335a2) contacting the first conductivity type semiconductor layer (323) near its edge and an inner contact portion (335al) contacting the first conductivity type semiconductor layer (323) in a region surrounded by the outer contact portion (335a2), a second contact layer (331) disposed on the mesa (M) and contacting the second conductivity type semiconductor layer (327), a first insulation layer (329, 333) covering the first conductivity type semiconductor layer (323) and the mesa (M), wherein the first insulation layer (329, 333) exposes the first conductivity type semiconductor layer (323), wherein the outer contact portion (335a2) and the first insulation layer (329, 333) alternately contact the first conductivity type semiconductor layer (323), and wherein a thickness of the first insulation layer (329, 333) located on the second contact layer (331) is greater than a thickness of the first insulation layer (329, 333) located around the second contact layer (331).

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