专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明公开

EP0359542A3 A semiconductor laser device 失效
公开(公告)号：EP0359542A3
公开(公告)日：1990-08-16
申请号：EP89309284.1
申请日：1989-09-13
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamamoto, Saburo , Morimoto, Taiji , Sasaki, Kazuaki , Kondo, Masaki , Suyama, Takahiro , Kondo, Masafumi
IPC分类号： H01S3/19
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor laser device which comprises a semiconductor substrate (11), a striped mesa disposed on the substrate and having an active layer (13) for laser oscillation, a current injection layer (15) disposed on the striped mesa and having a width (w) smaller than that (W) of the striped mesa, and a burying layer (18) disposed on both sides of the current injection layer (15) so as to come into contact with the side walls of the current injection layer (15), the burying layer (18) being capable of absorbing laser light produce in the active layer (13) and of preventing current from flowing through the outside of the striped mesa.

12. 发明公开

EP0381521A2 A semiconductor laser device and a method for the production of the same 失效
标题翻译：一种半导体激光装置及其制造方法
公开(公告)号：EP0381521A2
公开(公告)日：1990-08-08
申请号：EP90301124.5
申请日：1990-02-02
申请人： SHARP KABUSHIKI KAISHA
发明人： Kawanishi, Hidenori , Morimoto, Taiji , Kaneiwa, Shinji , Hayashi, Hiroshi , Miyauchi, Nobuyuki , Yano, Seiki , Matsumoto, Mitsuhiro , Sasaki, Kazuaki , Kondo, Masaki , Shiomoto, Takehiro , Yamamoto, Saburo
IPC分类号： H01S3/025
CPC分类号： H01S5/0281 , H01S5/0201 , H01S5/028 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure (12) formed on a semiconductor substrate (11), the multi-layered structure (12) having an AlGaAs active layer (16) for laser oscillation, and a protective film (17) formed on the facet, wherein a film containing sulfur (18) is provided between the facet and the protective film (17).
摘要翻译：公开了一种从小面发射激光的半导体激光装置。该半导体激光装置包括形成在半导体衬底（11）上的多层结构（12），该多层结构（12）具有用于激光振荡的AlGaAs活性层（16）和形成的保护膜（17）在小面上，其中在小面和保护膜（17）之间提供含有硫（18）的膜。

13. 发明公开

EP0321294A3 A semiconductor laser device 失效
标题翻译：半导体激光装置
公开(公告)号：EP0321294A3
公开(公告)日：1989-10-18
申请号：EP88311971.1
申请日：1988-12-16
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamamoto, Saburo , Hosoda, Masahiro , Sasaki, Kazuaki , Kondo, Masaki
IPC分类号： H01S3/19 , H01S3/06
CPC分类号： H01S5/227 , H01S5/12 , H01S5/2234 , H01S5/2235 , H01S5/2277
摘要： There is disclosed a semiconductor laser device with a strip-channeled substrate (1) and a double-heterostructure multi-layered crystal (2,3,4) disposed over the substrate (1), the multi-layered crystal containing an active layer (3) for laser oscillation, which semiconductor laser device comprises: an optical waveguide that is formed within the active layer (3) just above the striped channel (21) of the substrate (1) based on a decrease in the effective refractive index due to the striped channel (21), the outside of which absorbs a laser beam produced in the active layer (3); a striped mesa (23) that is formed by the removal of the portions of the multi-layered crystal corresponding to the outside of the optical waveguide; and a pluraltiy of burying layers that are grown into the removed portions to prevent the diffusion of carrier in the transverse direction within the active layer (3).
摘要翻译：公开了一种半导体激光器件，其具有设置在衬底（1）上的带状通道衬底（1）和双异质结构多层晶体（2,3,4），所述多层晶体包含有源层 3），用于激光振荡，所述半导体激光器装置包括：光波导，其基于有效折射率的降低而形成在基板（1）的条状沟道（21）正上方的有源层（3）条状通道（21），其外部吸收在有源层（3）中产生的激光束; 条形台面（23），其通过去除对应于光波导的外部的多层晶体的部分而形成; 以及生长在去除部分中的多个埋层，以防止载流子在活性层（3）内横向扩散。

14. 发明授权

EP0789430B1 A method of producing a semiconductor laser device 失效
标题翻译：一个半导体激光元件的制造方法
公开(公告)号：EP0789430B1
公开(公告)日：2000-02-16
申请号：EP97106425.8
申请日：1992-12-24
申请人： SHARP KABUSHIKI KAISHA
发明人： Watanabe,Masanori , Ohbayashi, Ken , Sasaki, Kazuaki , Yamamoto, Osamu , Matsumoto, Mitsuhiro
IPC分类号： H01S5/02 , H01S5/10
CPC分类号： H01S5/0425 , H01S5/0201 , H01S5/0281 , H01S5/164 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945

15. 发明授权

EP0558856B1 A method for producing a semiconductor laser device 失效
标题翻译：的半导体激光器的制造方法
公开(公告)号：EP0558856B1
公开(公告)日：1998-03-04
申请号：EP92311823.6
申请日：1992-12-24
申请人： SHARP KABUSHIKI KAISHA
发明人： Watanabe, Masanori , Ohbayashi, Ken , Sasaki, Kazuaki , Yamamoto, Osamu , Matsumoto, Mitsuhiro
IPC分类号： H01S3/025
CPC分类号： H01S5/0425 , H01S5/0201 , H01S5/0281 , H01S5/164 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945

16. 发明公开

EP0789430A3 A method of producing a semiconductor laser device 失效
标题翻译：一种制造半导体激光器件的方法
公开(公告)号：EP0789430A3
公开(公告)日：1997-11-05
申请号：EP97106425.8
申请日：1992-12-24
申请人： SHARP KABUSHIKI KAISHA
发明人： Watanabe, Masanori , Ohbayashi, Ken , Sasaki, Kazuaki , Yamamoto, Osamu , Matsumoto, Mitsuhiro
IPC分类号： H01S3/025 , H01S3/085
CPC分类号： H01S5/0425 , H01S5/0201 , H01S5/0281 , H01S5/164 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.
摘要翻译：一种用于制造半导体激光器件的方法，包括以下步骤：在内部结构的顶表面或衬底的背面中的任一个上以及内部结构的发光端面上形成窗口层; 在发光端面上形成反射膜; 通过使用几乎不蚀刻反射膜的蚀刻剂去除形成在顶表面或反面中的任一个上的窗口层; 并在通过蚀刻去除窗口层的表面上形成电极，并在另一表面上形成电极。另一种制造半导体激光器件的方法包括以下步骤：在棒的发光端面上形成窗口层; 将棒插入具有用于形成电极的开口和用于防止棒与开口之间的位置偏移的支撑部的装置中，并且在棒的顶表面和相反表面上形成电极; 并将棒切成碎片。

17. 发明公开

EP0778625A3 Light-emitting diode having a surface electrode of a tree like form 失效
标题翻译：具有树状表面电极的发光二极管
公开(公告)号：EP0778625A3
公开(公告)日：1997-10-29
申请号：EP97102514.3
申请日：1992-11-25
申请人： SHARP KABUSHIKI KAISHA
发明人： Watanabe, Masanori , Matsumoto, Mitsuhiro , Nakatsu, Hiroshi , Takeoka, Tadashi , Yamamoto, Osamu , Sasaki, Kazuaki
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/20 , H01L33/24 , H01L33/38
摘要： A surface electrode (316) on a surface (330) of a LED has a pad (318), and further, at least first-order branches (319a, ..., 319d) linearly extending from the pad (318), second-order branches (320a, 320b, and 320c) diverged and linearly extending from the first-order branches (319a, ..., 319d), and third-order branches (322a, 322b, and 322c) diverged and linearly extending from the second-order branches (320a, 320b, and 320c). The pad (318) out of the surface electrode (316) is not in electrical contact with a underlying semiconductor layer (331), whereas the surface electrode (316) and the semiconductor layer (331) are in electrical contact with each other at ends of the highest-order branches (322a, 322b, and 322c). Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode (316) is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.

18. 发明授权

EP0559455B1 A semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：EP0559455B1
公开(公告)日：1997-02-12
申请号：EP93301623.0
申请日：1993-03-03
申请人： SHARP KABUSHIKI KAISHA
发明人： Sasaki, Kazuaki , Nakatsu, Hiroshi , Yamamoto, Osamu , Watanabe, Masanori , Yamamoto, Saburo
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/0062 , H01L33/10 , H01L33/145 , H01L33/24 , H01L33/405

19. 发明授权

EP0477033B1 A semiconductor laser device 失效
标题翻译：半导体激光器
公开(公告)号：EP0477033B1
公开(公告)日：1996-06-12
申请号：EP91308619.5
申请日：1991-09-23
申请人： SHARP KABUSHIKI KAISHA
发明人： Matsumoto, Mitsuhiro , Sasaki, Kazuaki , Kondo, Masaki , Takeoka, Tadashi , Nakatsu, Hiroshi , Watanabe, Masanori , Yamamoto, Osamu , Yamamoto, Saburo
IPC分类号： H01S3/085 , H01S3/025 , H01L33/00
CPC分类号： H01S5/164 , H01L33/0062 , H01S5/0201 , H01S5/0202 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/1064 , H01S5/204 , H01S5/2211 , H01S5/222 , H01S5/3201 , H01S5/32316 , H01S5/32325 , H01S2301/18

20. 发明公开

EP0477033A3 A semiconductor laser device 失效
标题翻译：一种半导体激光器件及其制造方法
公开(公告)号：EP0477033A3
公开(公告)日：1992-07-01
申请号：EP91308619.5
申请日：1991-09-23
申请人： SHARP KABUSHIKI KAISHA
发明人： Matsumoto, Mitsuhiro , Sasaki, Kazuaki , Kondo, Masaki , Takeoka, Tadashi , Nakatsu, Hiroshi , Watanabe, Masanori , Yamamoto, Osamu , Yamamoto, Saburo
IPC分类号： H01S3/085 , H01S3/025 , H01L33/00
CPC分类号： H01S5/164 , H01L33/0062 , H01S5/0201 , H01S5/0202 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/1064 , H01S5/204 , H01S5/2211 , H01S5/222 , H01S5/3201 , H01S5/32316 , H01S5/32325 , H01S2301/18
摘要： A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet (10a), the laser light being excited in a waveguide within an active layer (14) sandwiched between a pair of cladding layers (13,15), wherein a window layer (17a) made of a semiconductor material having a band gap greater than that of the active layer (14) is formed on the cavity end facet (10a) from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer (17a) and the semiconductor materials at the cavity end facet (10a). There is also provided a method for producing such a semiconductor laser device with high efficiency.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式