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1. 发明公开

EP0222554A2 A semiconductor laser device and a method for driving the same 失效
标题翻译：一种半导体激光器件及其控制方法。
公开(公告)号：EP0222554A2
公开(公告)日：1987-05-20
申请号：EP86308432.3
申请日：1986-10-29
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamamoto, Saburo , Yamamoto, Osamu , Hayashi, Hiroshi , Maei Shigeki , Morimoto, Taiji , Miyauchi, Nobuyuki
IPC分类号： H01S3/103 , H01S3/096
CPC分类号： H01S5/0601 , H01S5/0035 , H01S5/0625
摘要： A semiconductor laser device has a laser-oscillating optical waveguide (1) composed of a control region (2) which functions to absorb light and main regions (3) which function to oscillate laser light, said control region (2) being positioned in the centre portion of said optical waveguide (1) and said main regions (3) being positioned on both ends of said control region (2), wherein said laser device further comprises a shunting means (Rg) by which the ratio of the current Ig flowing to said control region to the total current It injected into said laser device is set to meet the inequality (1): wherein Lg is the length of said control region and Lt is the length of said optical waveguide.

2. 发明公开

EP0162660A3 A compound resonator type semiconductor laser device 失效
标题翻译：一种化合物共振器型半导体激光器件
公开(公告)号：EP0162660A3
公开(公告)日：1986-12-17
申请号：EP85303412
申请日：1985-05-15
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamamoto, Saburo , Hayashi, Hiroshi , Miyauchi, Nobuyuki , Morimoto, Taiji , Maei, Shigeki
IPC分类号： H01S03/19 , H01S03/082
CPC分类号： H01S5/24 , H01S5/028 , H01S5/0622 , H01S5/10 , H01S5/1021 , H01S5/1032 , H01S5/4056
摘要： A compound resonator type semiconductor laser device comprises a multiple-layered crystal structure having a first laser operation area which contains a resonator for laser oscillation and a second laser operation area which contains a resonator a facet of which is shared with that of the resonator in the first laser operation area; and an electric current feeder for injecting a current into said multiple-layered crystal structure, wherein said facet of the resonator in the first laser operation area, which is shared with the facet of the resonator in the second laser operation area, is covered with a protective film to attain a high reflectivity therein, the other facet of the resonator in the first laser operation area is covered with a protective film to attain a low reflectivity therein and the other facet of the resonator in the second laser operation area is covered with a protective film to attain a high reflectivity therein.
摘要翻译：一种复合谐振器型半导体激光器件，包括具有第一激光器操作区域的多层晶体结构，该第一激光器操作区域包含用于激光振荡的谐振器，以及第二激光器操作区域，该第二激光器操作区域包含与该谐振器的共面体共面的谐振器第一激光手术区; 以及用于将电流注入到所述多层晶体结构中的电流馈送器，并且其中在所述第二激光操作区域中与所述谐振器的面共享的所述第一激光器操作区域中的谐振器的所述小面被覆盖保护膜以在其中获得高反射率，第一激光操作区域中的谐振器的另一个面被保护膜覆盖以在其中获得低反射率，并且覆盖第二激光操作区域中的谐振器的另一个面具有保护膜以在其中获得高反射率。

3. 发明公开

EP0194835A2 A semiconductor laser device with a protective film on the facets 无效
标题翻译： Halbleiterlaser-Vorrichtung mit Schutzbelag an denSeitenflächen。
公开(公告)号：EP0194835A2
公开(公告)日：1986-09-17
申请号：EP86301691.1
申请日：1986-03-10
申请人： SHARP KABUSHIKI KAISHA
发明人： Miyauchi, Nobuyuki , Hayashi, Hiroshi , Yamamoto, Saburo
IPC分类号： H01S3/085 , H01S3/19
CPC分类号： H01S5/028
摘要： The present invention provides a semiconductor laser device with a protective film (B,F) on the facets (2,5), wherein said protective film is made of a multi-layered dielectric film composed of alternate layers consisting of at least two kinds of dielectric film, one of which is a first dielectric film (31) of low refractive index and the other of which is a dielectric film (42) of high refractive index, said multi-layered dielectric film (F) which covers at least one of the facets (2) being a light-permeable film with a reflectivity of 30% or less.
摘要翻译：本发明提供一种半导体激光器件，其在刻面（2,5）上具有保护膜（B，F），其中所述保护膜由多层电介质膜构成，所述多层电介质膜由至少两种电介质膜，其中之一是低折射率的第一电介质膜（31），另一个是高折射率的电介质膜（42），所述多层电介质膜（F）覆盖至少一个小面（2）是反射率为30％以下的透光性薄膜。

4. 发明公开

EP0162668A2 Semiconductor laser 失效
标题翻译：半导体激光
公开(公告)号：EP0162668A2
公开(公告)日：1985-11-27
申请号：EP85303446.0
申请日：1985-05-16
申请人： SHARP KABUSHIKI KAISHA
发明人： Miyauchi, Nobuyuki , Maei, Shigeki , Yamamoto, Osamu , Morimoto, Taiji , Hayashi, Hiroshi , Yamamoto, Saburo
IPC分类号： H01S3/08 , H01S3/19
CPC分类号： H01S5/028 , H01S5/2232 , H01S5/2237
摘要： A semiconductor laser includes a front mirror facet and a rear mirror facet. An A1 2 O 3 film coating is formed on the front mirror facet by the electron beam evaporation technique so that the front mirror facet has the reflectance between 10 and 20%. A multi-layered coating is formed on the rear mirror facet so that the rear mirror facet has the reflectance higher than 90%.
摘要翻译：半导体激光器包括前镜面和后镜面。通过电子束蒸发技术在前镜面上形成A12O3膜涂层，使得前镜面的反射率在10％和20％之间。在后镜面上形成多层涂层，使得后镜面具有高于90％的反射率。

5. 发明公开

EP0162660A2 A compound resonator type semiconductor laser device 失效
标题翻译： Halbleiterlaservorrichtung mit zusammengesetzter Resonatorstruktur。
公开(公告)号：EP0162660A2
公开(公告)日：1985-11-27
申请号：EP85303412.2
申请日：1985-05-15
申请人： SHARP KABUSHIKI KAISHA
发明人： Yamamoto, Saburo , Hayashi, Hiroshi , Miyauchi, Nobuyuki , Morimoto, Taiji , Maei, Shigeki
IPC分类号： H01S3/19 , H01S3/082
CPC分类号： H01S5/24 , H01S5/028 , H01S5/0622 , H01S5/10 , H01S5/1021 , H01S5/1032 , H01S5/4056
摘要： A compound resonator type semiconductor laser device comprises a multiple-layered crystal structure having a first laser operation area which contains a resonator for laser oscillation and a second laser operation area which contains a resonator a facet of which is shared with that of the resonator in the first laser operation area; and an electric current feeder for injecting a current into said multiple-layered crystal structure, wherein said facet of the resonator in the first laser operation area, which is shared with the facet of the resonator in the second laser operation area, is covered with a protective film to attain a high reflectivity therein, the other facet of the resonator in the first laser operation area is covered with a protective film to attain a low reflectivity therein and the other facet of the resonator in the second laser operation area is covered with a protective film to attain a high reflectivity therein.
摘要翻译：一种复合谐振器型半导体激光器件，包括具有第一激光器操作区域的多层晶体结构，该第一激光器操作区域包含用于激光振荡的谐振器，以及第二激光器操作区域，该第二激光器操作区域包含与该谐振器的共面体共面的谐振器第一激光手术区; 以及用于将电流注入到所述多层晶体结构中的电流馈送器，并且其中在所述第二激光操作区域中与所述谐振器的面共享的所述第一激光器操作区域中的谐振器的所述小面被覆盖保护膜以在其中获得高反射率，第一激光操作区域中的谐振器的另一个面被保护膜覆盖以在其中获得低反射率，并且覆盖第二激光操作区域中的谐振器的另一个面具有保护膜以在其中获得高反射率。

6. 发明公开

EP0099616A2 Semiconductor laser 失效
标题翻译：半导体激光
公开(公告)号：EP0099616A2
公开(公告)日：1984-02-01
申请号：EP83302006.8
申请日：1983-04-08
申请人： SHARP KABUSHIKI KAISHA
发明人： Hayakawa, Toshiro , Miyauchi, Nobuyuki , Yano, Seiki
IPC分类号： H01S3/045
CPC分类号： H01S5/02272 , H01S5/024 , H01S5/24 , H01S5/32308
摘要： A GaAs semiconductor laser includes a GaAs semiconductor laser element, and a Cu heat sink attached to the GaAs semiconductor laser element through the use of an In solder. The GaAs semiconductor laser element includes an active layer sandwiched by cladding layers, and a substrate upon which various layers are formed. The GaAs semiconductor laser element is constructed so that the active layer is separated from the mounted surface by at least a distance which corresponds to 35 % of the entire thickness of the GaAs semiconductor laser element, thereby minimizing the stress applied to the active layer.
摘要翻译： GaAs半导体激光器包括GaAs半导体激光器元件和通过使用In焊料附着到GaAs半导体激光器元件的Cu散热器。 GaAs半导体激光器元件包括夹在包层之间的有源层和形成各种层的衬底。 GaAs半导体激光器元件的结构使得有源层与安装表面分开至少一个距离，该距离相当于GaAs半导体激光器元件整个厚度的35％，从而使施加在有源层上的应力最小。

7. 发明公开

EP0607700A2 Semiconductor laser device 失效
公开(公告)号：EP0607700A2
公开(公告)日：1994-07-27
申请号：EP93310535.5
申请日：1993-12-24
申请人： SHARP KABUSHIKI KAISHA
发明人： Masui, Katsushige , Miyauchi, Nobuyuki , Tani, Zenpei , Chikugawa, Hiroshi , Tsuji, Makoto , Ogawa, Masaru , Shiomoto, Takehiro
IPC分类号： H01S3/025
CPC分类号： H01S5/02244 , H01L24/97 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01S5/02228 , H01S5/0683 , H01S2301/176 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser device includes a base, a semiconductor laser chip and a resin layer enclosing the laser chip. The base may have a monitor photodiode mounted thereon in the vicinity of the laser chip. The resin layer enclosing the laser chip or both of the laser chip and the monitor diode chip is made of a single synthetic resin having a thickness not greater than 500µm and also having a surface substantially parallel to an outwardly oriented beam emitting end face of the laser chip.

8. 发明公开

EP0381521A3 A semiconductor laser device and a method for the production of the same 失效
公开(公告)号：EP0381521A3
公开(公告)日：1991-06-19
申请号：EP90301124.5
申请日：1990-02-02
申请人： SHARP KABUSHIKI KAISHA
发明人： Kawanishi, Hidenori , Morimoto, Taiji , Kaneiwa, Shinji , Hayashi, Hiroshi , Miyauchi, Nobuyuki , Yano, Seiki , Matsumoto, Mitsuhiro , Sasaki, Kazuaki , Kondo, Masaki , Shiomoto, Takehiro , Yamamoto, Saburo
IPC分类号： H01S3/025
CPC分类号： H01S5/0281 , H01S5/0201 , H01S5/028 , H01S5/0282 , H01S5/0283
摘要： A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure (12) formed on a semiconductor substrate (11), the multi-layered structure (12) having an AlGaAs active layer (16) for laser oscillation, and a protective film (17) formed on the facet, wherein a film containing sulfur (18) is provided between the facet and the protective film (17).

9. 发明授权

EP0194835B1 A semiconductor laser device with a protective film on the facets 无效
标题翻译：具有保护膜的半导体激光器件
公开(公告)号：EP0194835B1
公开(公告)日：1991-01-02
申请号：EP86301691.1
申请日：1986-03-10
申请人： SHARP KABUSHIKI KAISHA
发明人： Miyauchi, Nobuyuki , Hayashi, Hiroshi , Yamamoto, Saburo
IPC分类号： H01S3/085 , H01S3/19
CPC分类号： H01S5/028

10. 发明授权

EP0099616B1 Semiconductor laser 失效
公开(公告)号：EP0099616B1
公开(公告)日：1988-06-22
申请号：EP83302006.8
申请日：1983-04-08
申请人： SHARP KABUSHIKI KAISHA
发明人： Hayakawa, Toshiro , Miyauchi, Nobuyuki , Yano, Seiki
IPC分类号： H01S3/045
CPC分类号： H01S5/02272 , H01S5/024 , H01S5/24 , H01S5/32308

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