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11. 发明授权

EP0898299B1 Compartmentalized substrate processing chamber 失效
标题翻译：细分基板处理室
公开(公告)号：EP0898299B1
公开(公告)日：2003-07-23
申请号：EP98113358.0
申请日：1995-08-21
申请人： Applied Materials, Inc.
发明人： Tepman, Avi , Yin, Gerald Z. , Olgado, Donald
IPC分类号： H01L21/00
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908

12. 发明授权

EP0698915B1 Compartmentalized substrate processing chamber 失效
标题翻译：细分基板处理室
公开(公告)号：EP0698915B1
公开(公告)日：1999-02-10
申请号：EP95113112.7
申请日：1995-08-21
申请人： APPLIED MATERIALS, INC.
发明人： Tepman, Avi , Yin, Gerald Z. , Olgado, Donald
IPC分类号： H01L21/00
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908

13. 发明公开

EP0821397A3 Silicon carbide composite article particularly useful for plasma reactors 失效
标题翻译：碳化硅复合材料制品特别适用于等离子体反应器
公开(公告)号：EP0821397A3
公开(公告)日：1998-07-29
申请号：EP97305353.1
申请日：1997-07-17
申请人： Applied Materials, Inc.
发明人： Lu, Hao A. , Han, Nianci , Yin, Gerald Z. , Wu, Robert W.
IPC分类号： H01J37/32
CPC分类号： H01J37/32467 , H01J37/3255 , Y10S156/914
摘要： A composite silicon carbide article and its method of making in which a surface layer or film of silicon carbide is deposited, for example by chemical vapor deposition (CVD), over a free standing silicon carbide substrate, as is formed by bulk methods such as sintering and hot pressing. The article is advantageously used in a plasma reactor, especially an oxide etcher for semiconductor fabrication, and may be any of several parts including the chamber wall, chamber roof, or collar around the wafer. The bulk SiC provides an inexpensive and strong support structure of perhaps a complex shape while the CVD SiC film has advantages for plasma processing and may be tailored to particular uses. The composite SiC structure is particularly useful in that the electrical conductivities of the bulk SiC and film SiC may be separately controlled so as to provide, among many possibilities, a grounding plane, a window for RF electromagnetic radiation, or both. The ultra-high purity achieved in CVD silicon carbide also benefits the control of micro-contamination inside the reactor chamber, a key factor for increased device yield.
摘要翻译：一种复合碳化硅制品及其制造方法，其中例如通过化学气相沉积（CVD）将碳化硅的表面层或膜沉积在自立式碳化硅基底上，如通过诸如烧结并热压。该制品有利地用于等离子体反应器中，特别是用于半导体制造的氧化物蚀刻剂中，并且可以是围绕晶片的腔室壁，腔室顶部或套环的几个部件中的任何一个。块状碳化硅提供了可能是复杂形状的便宜且强大的支撑结构，而CVD碳化硅膜具有用于等离子体处理的优点并且可以针对特定用途量身定制。复合SiC结构特别有用，因为体SiC和膜SiC的电导率可以被单独控制，以在许多可能性中提供接地平面，用于RF电磁辐射的窗或两者。采用CVD碳化硅获得的超高纯度也有利于控制反应室内部的微污染，这是提高器件产量的关键因素。

14. 发明公开

EP0768702A1 Gas injection slit nozzle for a plasma process reactor 失效
标题翻译： Schlitz-Gasinjektionsdüsefüreinen Plasmabearbeitungsreaktion
公开(公告)号：EP0768702A1
公开(公告)日：1997-04-16
申请号：EP96307361.4
申请日：1996-10-09
申请人： APPLIED MATERIALS, INC.
发明人： Maydan, Dan , Mak, Steven S.Y. , Olgado, Donald , Yin, Gerald Z. , Driscoll, Timothy D. , Papanu, James S. , Tepman, Avi
IPC分类号： H01J37/32 , C23C16/44
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The disclosure relates to a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture (25) facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line (15) from the supply to the gas distribution apparatus (20a). The apparatus includes a centre member surrounded by at least one annular member (10) with a gap therebetween comprising the slotted aperture. Each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of a ceramic, fused quartz, polymeric or anodized aluminum material and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明涉及一种用于将气体注入等离子体反应器真空室的气体注入装置，所述等离子体反应器真空室具有腔室壳体，保持要处理的工件的基座，用于将RF能量施加到腔室中的装置，所述气体注入装置具有含有气体中的蚀刻剂物质，腔室壳体中的开口，设置在腔室壳体内的开口内的气体分配装置，其具有面向腔室内部的至少一个开槽孔口（25）和用于控制流量的装置来自所述一个或多个开槽孔的气体，以及从所述供给到所述气体分配装置（20a）的气体供给管线（15）。该装置包括由至少一个环形构件（10）围绕的中心构件，其间具有间隙，包括开槽孔。气体分配装置的每个构件包括至少几乎不受蚀刻剂物质攻击的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，熔融石英，聚合物或阳极氧化铝材料中的一种，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

15. 发明公开

EP0702391A3 Etch processing and plasma reactor for performing same 失效
标题翻译：用于执行相同的蚀刻和等离子体反应器
公开(公告)号：EP0702391A3
公开(公告)日：1996-09-25
申请号：EP95114046.6
申请日：1995-09-07
申请人： APPLIED MATERIALS, INC.
发明人： Xiaobing Ma, Diana , Yin, Gerald Z. , Hanawa, Hiroji
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , H01L21/32136
摘要： The plasma source power frequency in a plasma etch reactor is reduced to a low RF frequency such as about 2 MHz. It is a discovery of this invention that at this low frequency, capacitive coupling from the plasma power source is reduced, and the plasma source power level may be increased beyond 750 Watts to reduce capacitive coupling and provide a high density inductively coupled plasma without appreciably increasing the ion bombardment energy. Moreover, under these conditions the etchant (e.g., chlorine) concentration in the plasma may be increased to about 80 percent without decreasing etch uniformity to provide a very high metal alloy etch rate with complete residue removal, no profile microloading, and no etch rate microloading, the process being applicable over a wide window of metal alloy compositions.

16. 发明公开

EP0702392A3 Plasma reactor 失效
公开(公告)号：EP0702392A3
公开(公告)日：1996-04-10
申请号：EP95305793.2
申请日：1995-08-18
申请人： Applied Materials, Inc.
发明人： Maydan, Dan , Mak, Steve S.Y. , Olgado, Donald , Yin, Gerald Z. , Driscoll, Timothy D. , Shieh, Brian , Papanu, James S.
IPC分类号： H01J37/32
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The disclosure relates to a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing (10), a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line (15), from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle (25) facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member (20a) surrounded by at least one annular member (35a) with a gap (25) therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.

17. 发明公开

EP0698915A1 Compartmentalized substrate processing chamber 失效
标题翻译： Unterteilte衬垫Behandlungskammer
公开(公告)号：EP0698915A1
公开(公告)日：1996-02-28
申请号：EP95113112.7
申请日：1995-08-21
申请人： APPLIED MATERIALS INC.
发明人： Tepman, Avi , Yin, Gerald Z. , Olgado, Donald
IPC分类号： H01L21/00
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908
摘要： A process chamber (10) for semiconductor wafers is formed of multiple compartments (12, 14). A first compartment (12) is provided for supplying an isolated environment for processing the wafers, and a second compartment (14) is provided, in selective communication with the first compartment (12), to load and unload wafers from the chamber (10). The wafer handling equipment is located in the second compartment (14) to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber (10) must be cleaned, only the first compartment (12) must be cleaned, as no processing occurs in the second compartment (14). Therefore, the entire first compartment (12) may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.
摘要翻译：用于半导体晶片的处理室（10）由多个隔间（12,14）形成。提供第一隔室（12），用于提供用于处理晶片的隔离环境，并且提供与第一隔室（12）选择性连通的第二隔室（14），用于从腔室（10）装载和卸载晶片，。晶片处理设备位于第二隔室（14）中以将其与处理环境隔离，并因此形成用于晶片处理设备的干净，无污染的环境。当腔室（10）必须被清洁时，只有第一隔室（12）必须被清洁，因为在第二隔室（14）中没有处理。因此，整个第一隔室（12）可以被移除以进行清洁，并且更换为干净的第一隔室，以减少室清洁操作期间的室周转时间。

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