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1. 发明公开

EP1067591A2 Edge bead removal/spin rinse dry module 审中-公开
标题翻译：去毛刺的晶片/自旋，漂洗，和干燥机组件的边缘
公开(公告)号：EP1067591A2
公开(公告)日：2001-01-10
申请号：EP00305662.9
申请日：2000-07-05
申请人： Applied Materials, Inc.
发明人： Stevens, Joe , Olgado, Donald , Ko, Alexander S. , Mok, Yeuk-Fai Edwin
IPC分类号： H01L21/00
CPC分类号： H01L21/6708 , Y10S134/902
摘要： An apparatus for etching a substrate, comprises a container (102), a substrate support (104) disposed in the container; a rotation actuator (120) attached to the substrate support; and a fluid delivery assembly (106) disposed in the container to deliver an etchant to a peripheral portion of a substrate (122) disposed on the substrate support. Preferably, the substrate support comprises a vacuum chuck (124) and the fluid delivery assembly comprises one or more nozzles (150). A method for etching a substrate is also disclosed, comprising, rotating a substrate positioned on a rotatable substrate support; and delivering an etchant to a peripheral portion of the substrate. Preferably, the substrate is rotated at between about 100 rpm and about 1000 rpm, and the etchant is delivered in a direction that is substantially tangent to the peripheral portion of the substrate at an incident angle between about 0 degrees and about 45 degrees from a surface of substrate.

2. 发明公开

EP0702392A2 Plasma reactor 失效
标题翻译：等离子反应器
公开(公告)号：EP0702392A2
公开(公告)日：1996-03-20
申请号：EP95305793.2
申请日：1995-08-18
申请人： Applied Materials, Inc.
发明人： Maydan, Dan , Mak, Steve S.Y. , Olgado, Donald , Yin, Gerald Z. , Driscoll, Timothy D. , Shieh, Brian , Papanu, James S.
IPC分类号： H01J37/32
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The disclosure relates to a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing (10), a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line (15), from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle (25) facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member (20a) surrounded by at least one annular member (35a) with a gap (25) therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明涉及一种用于将气体喷射到等离子体反应器真空室中的气体喷射装置，所述真空室具有腔室壳体（10），保持待处理的工件的基座，用于将RF能量施加到腔室中的装置，所述气体喷射装置具有气体包含在气体中的蚀刻剂物质的供应装置，腔室壳体中的开口，从腔室壳体中的供应到开口的气体供给管线（15）以及腔室壳体中的开口附近的气体分配装置，气体供给装置装置具有至少一个面向腔室内部的狭缝喷嘴（25）。在优选实施例中，气体分配装置包括由至少一个环形部件（35a）围绕的盘形部件（20a），其间具有间隙（25），包括狭缝喷嘴，盘形部件和环形部件阻止气体流过开口在腔室内。优选地，气体分配设备的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配设备的每个构件包括陶瓷，石英，蓝宝石，聚酰亚胺或阳极氧化铝中的一种，并且气体供给管线包括不锈钢。优选地，在组装气体分配设备之前，每个构件都具有其表面抛光。

3. 发明公开

EP0898299A1 Compartmentalized substrate processing chamber 失效
标题翻译： Unterteilte Substrat Behandlungskammer
公开(公告)号：EP0898299A1
公开(公告)日：1999-02-24
申请号：EP98113358.0
申请日：1995-08-21
申请人： Applied Materials, Inc.
发明人： Tepman, Avi , Yin, Gerald Z. , Olgado, Donald
IPC分类号： H01L21/00
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908
摘要： The invention is related to an apparatus for processing substrates, comprising a first compartment (12) for maintaining a substrate processing environment therein, the first compartment (12) including a base (20); a second compartment (14) having a substrate support member (18, 63, 64) therein; a transfer chamber (204) connected to the second compartment (14) through a slit passage (6) and having a slit passage door to seal the slit passage (6); and an aperture (16) through a portion of the base (20) between the first compartment (12) and the second compartment (14), the aperture in the base (20) being selectively sealed by the substrate support member (18, 63, 64) to isolate the process environment in the first compartment (12) above the base (20). The first compartment (12) including the base (20) is removable and replacable with a additional first compartment (12) including an additional base (20).
摘要翻译：本发明涉及一种用于处理衬底的装置，包括用于维持其中的衬底处理环境的第一隔间（12），所述第一隔室（12）包括基座（20）; 第二隔室（14），其中具有基板支撑构件（18,63,64）; 传送室（204），其通过狭缝通道（6）连接到第二隔室（14），并具有狭缝通道门以密封狭缝通道（6）; 以及通过所述基座（20）的在所述第一隔间（12）和所述第二隔室（14）之间的一部分的孔（16），所述基座（20）中的孔被所述基板支撑构件（18,63）选择性地密封，64）隔离在基座（20）上方的第一隔室（12）中的处理环境。包括基座（20）的第一隔室（12）是可移除的，并且可替换地包括附加的第一隔室（12），其包括附加基座（20）。

4. 发明公开

EP0818802A2 Gas injection slit nozzle for a plasma process reactor 失效
标题翻译： GasinjektionsdüsefürPlasmabehandlungsreaktor
公开(公告)号：EP0818802A2
公开(公告)日：1998-01-14
申请号：EP97304976.0
申请日：1997-07-08
申请人： Applied Materials, Inc.
发明人： Maydan, Dan , Mak, Steve S.Y. , Olgado, Donald , Yin, Gerald Zheyao , Driscoll, Timothy , Papanu, James S. , Tepman, Avia
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , C23C16/455 , H01J37/3244
摘要： A gas injection system for injecting gases into a plasma reactor (200) having a vacuum chamber with a sidewall (202), a pedestal (206) for holding a semiconductor wafer (208) to be processed, and a RF power applicator (210,212) for applying RF power into the chamber. The gas injection system includes at least one gas supply (220) containing gas, a gas distribution apparatus (100) which has at least one slotted aperture (140) facing the interior of the chamber, and one or more gas feed lines (222) connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles (100) each with a slotted aperture (140) facing an interior of the chamber. Gas feed lines (222) are employed to respectively connect each gas distribution nozzle (100) to separate ones of the gas supplies.
摘要翻译：一种用于将气体注入等离子体反应器（200）的气体注入系统，所述等离子体反应器具有具有侧壁（202）的真空室，用于保持要处理的半导体晶片（208）的基座（206）和RF电力施加器（210,212）用于将RF功率施加到腔室中。气体注入系统包括至少一个含有气体的气体供应源（220），气体分配设备（100），其具有面向腔室内部的至少一个开槽孔口（140）和一个或多个气体供给管线（222）将气体供应或供应连接到气体分配装置。根据本发明的径向气体分配装置的优选实施例设置在室侧壁中，并且包括多个气体分配喷嘴（100），每个气体分配喷嘴具有面向腔室内部的开槽孔口（140）。气体供给管线（222）用于分别连接每个气体分配喷嘴（100）以分离气体供应源。

5. 发明授权

EP0694949B1 Inductively coupled plasma reactors 失效
标题翻译：电感耦合等离子体反应器
公开(公告)号：EP0694949B1
公开(公告)日：2001-12-19
申请号：EP95304041.7
申请日：1995-06-12
申请人： APPLIED MATERIALS, INC.
发明人： Yin, Gerald Zheyao , Hanawa, Hiroji , Ma, Diana Xiaobing , Olgado, Donald
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32458 , H01J37/321

6. 发明授权

EP0702392B1 Plasma reactor 失效
标题翻译：等离子体反应器
公开(公告)号：EP0702392B1
公开(公告)日：2000-10-04
申请号：EP95305793.2
申请日：1995-08-18
申请人： Applied Materials, Inc.
发明人： Maydan, Dan , Mak, Steve S.Y. , Olgado, Donald , Yin, Gerald Z. , Driscoll, Timothy D. , Shieh, Brian , Papanu, James S.
IPC分类号： H01J37/32 , C23C16/44
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449

7. 发明公开

EP1067591A3 Edge bead removal/spin rinse dry module 审中-公开
标题翻译： Entgraten derRändereines Wafers / Schleuder-，Spül-und Trocknermodul
公开(公告)号：EP1067591A3
公开(公告)日：2004-03-24
申请号：EP00305662.9
申请日：2000-07-05
申请人： Applied Materials, Inc.
发明人： Stevens, Joe , Olgado, Donald , Ko, Alexander S. , Mok, Yeuk-Fai Edwin
IPC分类号： H01L21/00
CPC分类号： H01L21/6708 , Y10S134/902
摘要： An apparatus for etching a substrate, comprises a container (102), a substrate support (104) disposed in the container; a rotation actuator (120) attached to the substrate support; and a fluid delivery assembly (106) disposed in the container to deliver an etchant to a peripheral portion of a substrate (122) disposed on the substrate support. Preferably, the substrate support comprises a vacuum chuck (124) and the fluid delivery assembly comprises one or more nozzles (150). A method for etching a substrate is also disclosed, comprising, rotating a substrate positioned on a rotatable substrate support; and delivering an etchant to a peripheral portion of the substrate. Preferably, the substrate is rotated at between about 100 rpm and about 1000 rpm, and the etchant is delivered in a direction that is substantially tangent to the peripheral portion of the substrate at an incident angle between about 0 degrees and about 45 degrees from a surface of substrate.
摘要翻译：一种用于蚀刻衬底的设备，包括容器（102），设置在容器中的衬底支撑件（104）旋转致动器（120），附接到所述基板支撑件; 以及设置在所述容器中以将蚀刻剂输送到设置在所述基板支撑件上的基板（122）的周边部分的流体输送组件（106）。优选地，衬底支撑件包括真空吸盘（124），并且流体输送组件包括一个或多个喷嘴（150）。还公开了蚀刻基板的方法，包括：旋转位于可旋转基板支撑件上的基板; 以及向衬底的周边部分输送蚀刻剂。优选地，衬底在约100rpm和约1000rpm之间旋转，并且蚀刻剂沿着与衬底的周边部分基本相切的方向以与表面成约0度和约45度之间的入射角度被输送的基质。

8. 发明授权

EP0898299B1 Compartmentalized substrate processing chamber 失效
标题翻译：细分基板处理室
公开(公告)号：EP0898299B1
公开(公告)日：2003-07-23
申请号：EP98113358.0
申请日：1995-08-21
申请人： Applied Materials, Inc.
发明人： Tepman, Avi , Yin, Gerald Z. , Olgado, Donald
IPC分类号： H01L21/00
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908

9. 发明公开

EP0818802A3 Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：气体喷嘴用于等离子体处理反应器
公开(公告)号：EP0818802A3
公开(公告)日：2001-10-10
申请号：EP97304976.0
申请日：1997-07-08
申请人： Applied Materials, Inc.
发明人： Maydan, Dan , Mak, Steve S.Y. , Olgado, Donald , Yin, Gerald Zheyao , Driscoll, Timothy , Papanu, James S. , Tepman, Avia
IPC分类号： H01J37/32 , C23C16/455
CPC分类号： H01J37/321 , C23C16/455 , H01J37/3244
摘要： A gas injection system for injecting gases into a plasma reactor (200) having a vacuum chamber with a sidewall (202), a pedestal (206) for holding a semiconductor wafer (208) to be processed, and a RF power applicator (210,212) for applying RF power into the chamber. The gas injection system includes at least one gas supply (220) containing gas, a gas distribution apparatus (100) which has at least one slotted aperture (140) facing the interior of the chamber, and one or more gas feed lines (222) connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles (100) each with a slotted aperture (140) facing an interior of the chamber. Gas feed lines (222) are employed to respectively connect each gas distribution nozzle (100) to separate ones of the gas supplies.

10. 发明授权

EP0698915B1 Compartmentalized substrate processing chamber 失效
标题翻译：细分基板处理室
公开(公告)号：EP0698915B1
公开(公告)日：1999-02-10
申请号：EP95113112.7
申请日：1995-08-21
申请人： APPLIED MATERIALS, INC.
发明人： Tepman, Avi , Yin, Gerald Z. , Olgado, Donald
IPC分类号： H01L21/00
CPC分类号： H01L21/67748 , H01L21/6719 , H01L21/67196 , H01L21/67751 , Y10S414/135 , Y10S414/139 , Y10S438/905 , Y10S438/907 , Y10S438/908

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