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101. 发明公开

EP2073286A1 MAGNETORESISTIVE ELEMENT MANUFACTURING METHOD, AND MULTI-CHAMBER APPARATUS FOR MANUFACTURING THE MAGNETORESISTIVE ELEMENT 无效
标题翻译：用于生产生产同样一种磁阻效应元素多腔室装置
公开(公告)号：EP2073286A1
公开(公告)日：2009-06-24
申请号：EP07807161.0
申请日：2007-09-12
申请人： Canon Anelva Corporation
发明人： IKEMOTO, Manabu , OSADA, Tomoaki , YOKOKAWA, Naoaki
IPC分类号： H01L43/12 , H01L21/02 , H01L21/3065 , H01L43/08
CPC分类号： H01F41/308 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01L43/12
摘要： A magnetoresistive effect element manufacturing method includes a first step of preparing a magnetoresistive effect element including a magnetic film and a substrate, a second step of etching a predetermined region of the magnetic film by a reactive ion etching method, and a third step of exposing the magnetic film having undergone the second step to a plasma at an ion current density of 4 × 10 -7 A/cm 2 or less.
摘要翻译：一种磁阻效应元件制造方法，包括，通过膜的反应性离子蚀刻法制备磁阻效应元件包括磁膜和基板，蚀刻所述磁的预定区域的第二步骤的第一步骤，和暴露所述的第三步骤磁性薄膜已经经历第二步骤的等离子体在4×10 -7 A / cm 2以下的离子电流密度。

102. 发明公开

EP2071052A2 Copper film vapor phase deposition apparatus 审中-公开
标题翻译： Vorrichtung zur Dampfabscheidung eines Kupferfilms
公开(公告)号：EP2071052A2
公开(公告)日：2009-06-17
申请号：EP09004679.8
申请日：2002-06-26
申请人： Canon Anelva Corporation
发明人： Sakamoto, Hitoshi , Yahata, Naoki
IPC分类号： C23C16/14 , C23C16/448
CPC分类号： C23C16/4488 , C23C16/14 , C23C16/448
摘要： A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active Cu x Cl y , wherein x is 1 to 3, y is 1 to 3, gas, and forming a copper film by transporting the Cu x Cl y gas onto the surface of a substrate to be processed. By using inexpensive high-purity copper and inexpensive chlorine, hydrogen chloride, or chlorine and hydrogen as source gases, a copper film containing no residual impurity such as carbon and having high film quality can be formed with high reproducibility.
摘要翻译：一种铜膜气相沉积设备，包括：反应器容器（2），其中放置待处理的基板（10）; 设置在所述反应器容器（2）中以与所述基板（10）相对的高纯度铜（4）; 插入所述反应器容器（2）中的气体供给管（6）将含有选自氯气和氯化氢气体的气体的气体供给到所述高纯度铜（4）附近; 用于在所述反应器容器（2）中的所述高纯度铜（4）附近产生选自氯和氯化氢的材料的等离子体的等离子体产生装置; 以及用于排出所述反应器容器（2）中的气体的排气装置（1）。

103. 发明公开

EP2053644A1 OXIDATION METHOD AND OXIDATION APPARATUS 审中-公开
标题翻译： OXIDIERUNGSVERFAHREN UND OXIDIERUNGSVORRICHTUNG
公开(公告)号：EP2053644A1
公开(公告)日：2009-04-29
申请号：EP08710732.2
申请日：2008-02-04
申请人： Canon Anelva Corporation
发明人： NAGAMINE, Yoshinori , WATANABE, Naoki
IPC分类号： H01L21/316 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , H01L43/08
摘要： An oxidizing method and oxidizing apparatus in which a plasma generating chamber having an oxidizing gas supply port and a substrate processing chamber having an exhaust port and internally having a substrate susceptor are connected via a partition having a number of through holes, a plasma of an oxidizing gas supplied into the plasma generating chamber is generated, and an oxide layer is formed on a substrate surface by supplying the generated active species onto a substrate are characterized in that the partition is connected to a power supply via a switching mechanism such that a positive, negative, or zero voltage is applied to the partition, and an oxidation process is performed by changing the ratio of radicals, positive ions, and negative ions in the active species supplied onto the substrate by switching the voltages at least once during the oxidation process.
摘要翻译：一种氧化方法和氧化装置，其中具有氧化气体供给口的等离子体产生室和具有排气口并且内部具有基板基座的基板处理室通过具有多个通孔的隔板连接，氧化的等离子体产生供应到等离子体产生室中的气体，并且通过将所产生的活性物质提供到衬底上而在衬底表面上形成氧化物层，其特征在于，隔板经由开关机构连接到电源，负电压或零电压施加到隔板上，并且通过在氧化工艺期间通过切换至少一次电压来改变提供给衬底上的活性物质中的自由基，正离子和负离子的比例来进行氧化过程。

104. 发明公开

EP2051282A2 Metal film production apparatus 审中-公开
标题翻译：金属薄膜生产设备
公开(公告)号：EP2051282A2
公开(公告)日：2009-04-22
申请号：EP08021946.2
申请日：2002-11-05
申请人： Canon Anelva Corporation
发明人： Matsuda, Ryuichi , Yahata, Naoki , Sakamoto, Hitoshi
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , C23C16/14 , C23C16/4488 , C23C16/455 , H01J2237/2001
摘要： A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl 2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (Cu x Cl y ). The precursor (Cu x Cl y ) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.
摘要翻译：源气体通过喷嘴供应到腔室中，并且电磁波从等离子体天线投射到腔室中。所产生的Cl2气体等离子体相对于等离子体天线中的电流的流动方向以不连续状态布置在基板和天花板构件之间对形成前驱体（CuxCly）的多个铜突起进行蚀刻反应。向被控制为比被蚀刻部件的温度低的温度的基板输送的前驱体（CuxCly）通过还原反应仅被转换为Cu离子，并被引导至基板，以在基板的表面上形成薄Cu膜。成膜速度快，成本明显下降，生成的铜薄膜质量高。

105. 发明公开

EP1674592A3 Thin film processing system with different processing chambers 审中-公开
标题翻译：与多家商会涂料厂
公开(公告)号：EP1674592A3
公开(公告)日：2009-04-22
申请号：EP05077982.6
申请日：2005-12-22
申请人： Canon Anelva Corporation
发明人： Sakai, Junro
IPC分类号： C23C16/455
CPC分类号： C23C16/45523 , C23C16/45551
摘要： A thin film processing system (10) alternately introducing two types of material gases into a reaction vessel unit so as to process the surface of a substrate, provided with a reaction vessel (10A) (first chamber) formed inside the reaction vessel unit and into which a first material gas is introduced, a reaction vessel (second chamber) formed inside the reaction vessel (10B) unit stacked over this and into which a second material gas is introduced, an opening formed in a wall between the two adjoining reaction vessels, a plurality of partition plates (12,13) moving back and forth between the two reaction vessels in a coordinated manner, one of which designed to close the opening and at least one of which carrying a substrate, and a material gas feed mechanism (24) and exhaust mechanism for supplying the first material gas and second material gas to the substrate parallel to the substrate surface in the two vessels.

106. 发明授权

EP1313127B1 Metal film production apparatus 有权
标题翻译：用于制造金属薄膜的装置
公开(公告)号：EP1313127B1
公开(公告)日：2009-02-11
申请号：EP02024599.9
申请日：2002-11-05
申请人： Canon Anelva Corporation
发明人： Matsuda, Ryuichi, Mitsubishi Heavy Ind., Ltd. , Yahata, Naoki, Mitsubishi Heavy Ind., Ltd. , Sakamoto, Hitoshi, Mitsubishi Heavy Ind., Ltd.
IPC分类号： H01J37/32 , C23C16/08 , C23C16/448 , C23C16/455
CPC分类号： H01J37/321 , C23C16/14 , C23C16/4488 , C23C16/455 , H01J2237/2001

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