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    • 93. 发明公开
    • Thin film formation method
    • Verfahren zur Herstellung vondünnenSchichten
    • EP1548147A1
    • 2005-06-29
    • EP04030291.1
    • 2004-12-21
    • SEIKO EPSON CORPORATION
    • Yotsuya, Shinichi
    • C23C14/04C23C4/12
    • C23C4/12C23C4/01C23C14/042
    • The invention relates to providing a thin film formation method which can carry out various kinds of patterning deposition such as a mask vapor deposition with high precision and correctly, and a thin film formation equipment, and furthermore, to provide a method of manufacturing an organic electroluminescence device using the thin film formation method, an organic electroluminescence device, and an electronic apparatus having the organic electroluminescence device. A thin film formation method that arranges a mask M between a substrate G and a material source 1 and forms the material of the material source 1 as thin film in the substrate G, comprises: a substrate contacting process to contact the mask M and the substrate G; a gap measurement process to measure a gap between the mask M and the substrate G; and a thin film formation process to form the thin film according to the measurement result in the gap measurement process.
    • 本发明涉及提供一种可以高精度地正确地进行诸如掩模气相沉积的各种图案形成沉积的薄膜形成方法以及薄膜形成设备,此外,提供一种制造有机电致发光 使用薄膜形成方法的器件,有机电致发光器件和具有有机电致发光器件的电子设备。 在衬底G和材料源1之间布置掩模M并在衬底G中形成作为薄膜的材料源1的材料的薄膜形成方法包括:与掩模M和衬底接触的衬底接触工艺 G; 用于测量掩模M和基板G之间的间隙的间隙测量处理; 以及根据测量结果在间隙测量过程中形成薄膜的薄膜形成工艺。