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1. 发明公开

EP3306394A1 METHOD FOR PRODUCING A STRUCTURE WITH SPATIAL ENCODED FUNCTIONALITY 有权
标题翻译：生成具有空间编码功能的结构的方法
公开(公告)号：EP3306394A1
公开(公告)日：2018-04-11
申请号：EP16192767.8
申请日：2016-10-07
申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.
发明人： SITTI, Metin , CEYLAN, Hakan , YASA, Immihan Ceren
IPC分类号： G03F7/00 , G03F7/20 , B82Y10/00 , B82Y40/00
CPC分类号： B81C3/001 , B81C1/00214 , B81C3/005 , B81C3/008 , B82Y40/00 , G03F7/0027 , G03F7/0037 , G03F7/2053
摘要： The invention relates to a method for producing a structure with spatial encoded functionality, the method comprising:
- providing in a volume (114) a first photosensitive material (116) that is two-photon crosslinking compatible,
- generating in the volume (114) a framework of crosslinked first photosensitive material (116), the generating of the framework comprising exposing the first photosensitive material (116) with a first focused laser beam (118) according to a first pattern for specifically initiating a two-photon crosslinking of the first photosensitive material (116) in accordance with the first pattern,
- removing from the volume (114) any remaining non-crosslinked portions of the first photosensitive material (116),
- providing to the volume (114) a second photosensitive material (116) that is two-photon crosslinking compatible,
- generating in the volume (114) the structure, the generating of the structure comprising exposing the second photosensitive material (116) with a second focused laser beam (118) according to a second pattern for specifically initiating a two-photon crosslinking of predefined surface portions of the framework and the second photosensitive material (116) in accordance with the second pattern,
- removing from the volume (114) any remaining non-crosslinked portions of the second photosensitive material (116).
摘要翻译：本发明涉及一种用于产生具有空间编码功能的结构的方法，该方法包括： - 在体积（114）中提供双光子交联兼容的第一光敏材料（116）， - 在体积（114）中产生，交联的第一光敏材料（116）的框架，所述框架的生成包括：根据第一模式用第一聚焦激光束（118）暴露所述第一光敏材料（116），用于特别地启动所述第一光敏材料 - 从所述体积（114）去除所述第一光敏材料（116）的任何剩余的未交联部分， - 向所述体积（114）提供第二光敏材料（116），所述第二光敏材料（116）即双光子交联相容， - 在所述体积（114）中产生所述结构，所述结构的产生包括使所述第二光敏材料（116）暴露于第二聚焦激光束（118），用于根据所述第二图案特定地启动所述框架和所述第二感光材料（116）的预定表面部分的双光子交联， - 从所述体积（114）第二感光材料（116）的任何剩余的未交联部分。

2. 发明公开

EP2011763A1 Procédé de fabrication de pièces micromécaniques en matériau cristallin 有权
标题翻译：维尔法赫尔·赫斯特伦·冯·米克里姆森斯（Teilen aus kristallinischem）材料
公开(公告)号：EP2011763A1
公开(公告)日：2009-01-07
申请号：EP07111580.2
申请日：2007-07-03
申请人： EM Microelectronic-Marin SA
发明人： Gonin, Yvan , Marsico, Vittorio
IPC分类号： B81C5/00 , B81C1/00
CPC分类号： B81C1/00214 , B81C99/008
摘要： L'invention concerne un procédé de fabrication de pièces en un premier matériau apte à être gravé, à partir d'un substrat comportant au moins une couche superficielle de ce premier matériau. Le procédé comporte les étapes suivantes :
- Formation d'une couche superficielle sensiblement uniforme d'un deuxième matériau en surface de la couche superficielle du premier matériau, le deuxième matériau étant apte à résister à une gravure sélective du premier matériau,
- Formation d'un bourrelet du deuxième matériau en pourtour de la couche superficielle du deuxième matériau,
- Structuration de la couche du deuxième matériau et du bourrelet par un procédé standard de photolithographie comprenant une étape de gravure d'une durée suffisante pour graver la couche superficielle du deuxième matériau sur toute son épaisseur, mais insuffisante pour graver le bourrelet sur toute son épaisseur, de façon à obtenir un masque du deuxième matériau s'étendant jusqu'en périphérie de la couche de premier matériau,
- Découpe des pièces en premier matériau à travers le masque du deuxième matériau, par attaque directionnelle.
摘要翻译：在基板（10）上的表面硅层（16）上形成均匀的氧化物表面层（18）。通过化学处理除去氮化物掩膜，在表面氧化物层上形成氧化物珠。通过用于形成氧化物掩模的光刻工艺构成表面氧化物层和氧化物珠。通过氧化物掩模蚀刻表面硅层以切出机械硅元件（24）。

3. 发明公开

EP0712021A1 Array of thin film actuated mirrors and method for the manufacture thereof 失效
标题翻译： Matrixanordnung von gesteuertenDünnschichtspiegelnund Verfahren zu deren Herstellung
公开(公告)号：EP0712021A1
公开(公告)日：1996-05-15
申请号：EP95116566.1
申请日：1995-10-20
申请人： DAEWOO ELECTRONICS CO., LTD
发明人： Min, Yong-Ki, Video Research Center
IPC分类号： G02B26/08
CPC分类号： B81C1/00214 , B81B2201/032 , B81B2201/042 , B81C1/00174 , B81C2201/0109 , G02B26/0858 , H04N9/30
摘要： An array (100) of M x N thin film actuated mirrors (101) includes an active matrix (120) having a substrate (122) with an array of M x N connecting terminals (124) and an array of M x N transistors, and an array of M x N actuating structures (111), wherein each of the actuating structures (111) being a bimorph structure, includes a second thin film electrode (165), a lower electrodisplacive member (185), an intermediate thin film electrode (135), an upper electrodisplacive member (175) and a first thin film electrode (155). Furthermore, there is disclosed a method for the manufacture thereof, the method comprising the steps of: providing an active matrix; forming a thin film sacrificial layer on top of the active matrix; removing selectively the thin film sacrificial layer; forming a second thin film electrode layer thereon; removing selectively the second thin film electrode layer; depositing a lower electrodisplacive layer; forming an intermediate electrode layer; depositing an upper electrodisplacive layer; forming a first thin film electrode layer, thereby forming a multiple layered structure; patterning the multiple layered structure into an array of M x N semifinished actuating structures; and removing the thin film sacrificial layer.
摘要翻译： M×N薄膜致动反射镜（101）的阵列（100）包括有源矩阵（120），有源矩阵（120）具有带有M×N个连接端子（124）和M×N个晶体管阵列的衬底（122）以及M x N致动结构（111）的阵列，其中每个致动结构（111）是双压电晶片结构，包括第二薄膜电极（165），下部电致位移部件（185），中间薄膜电极（135），上部电致位移元件（175）和第一薄膜电极（155）。此外，公开了一种制造方法，该方法包括以下步骤：提供有源矩阵; 在有源矩阵的顶部形成薄膜牺牲层; 选择性地去除薄膜牺牲层; 在其上形成第二薄膜电极层; 选择性地去除第二薄膜电极层; 沉积较低的电致位移层; 形成中间电极层; 沉积上部电致位移层; 形成第一薄膜电极层，从而形成多层结构; 将多层结构图案化成M×N半成品致动结构的阵列; 并去除薄膜牺牲层。

4. 发明公开

EP3344402A1 RELEASE HOLE PLUS CONTACT VIA FOR FINE PITCH ULTRASOUND TRANSDUCER INTEGRATION 有权
公开(公告)号：EP3344402A1
公开(公告)日：2018-07-11
申请号：EP16775362.3
申请日：2016-09-02
申请人： Qualcomm Incorporated
发明人： KIDWELL, Donald, William , SHENOY, Ravindra , LASITER, Jon
IPC分类号： B06B1/02 , B06B1/06
CPC分类号： B06B1/0292 , B06B1/0622 , B81B3/0021 , B81B3/0097 , B81B7/04 , B81C1/00134 , B81C1/00214 , H01L41/332
摘要： Methods, systems, computer-readable media, and apparatuses for high density Micro-Electro-Mechanical Systems (MEMS) are presented. In some embodiments, a method for manufacturing a micro-electro-mechanical device on a substrate can comprise etching a release via through a layer of the device. The method can further comprise creating a cavity in the layer of the device using the release via as a conduit to access the desired location of the cavity, the cavity enabling movement of a transducer of the device. The method can then comprise depositing low impedance, electrically conductive material into the release via to form an electrically conductive path through the layer. Finally, the method can comprise electrically coupling the electrically conductive material to an electrode of the transducer.

5. 发明授权

EP2461159B1 Method of fabricating sensors having functionalized resonating beams 有权
标题翻译：制造具有功能化谐振束的传感器的方法
公开(公告)号：EP2461159B1
公开(公告)日：2017-10-25
申请号：EP10193535.1
申请日：2010-12-02
申请人： Honeywell Romania S.R.L.
发明人： Cobianu, Cornel. P.
IPC分类号： G01N29/036
CPC分类号： G01N29/022 , B01L3/502707 , B81B2201/0214 , B81B2203/0118 , B81B2207/015 , B81C1/00214 , B81C2201/0185 , B81C2203/0118 , B81C2203/0714 , B81C2203/0735 , B82Y40/00 , G01N29/036 , G01N29/222 , G01N2291/021 , G01N2291/0255 , G01N2291/0256 , G01N2291/0427

6. 发明公开

EP1273094A2 MULTI-LAYER, SELF-ALIGNED VERTICAL COMB-DRIVE ELECTROSTATIC ACTUATORS AND FABRICATION METHODS 审中-公开
标题翻译： MULTI-LAYER自调谐垂直梳状静电驱动装置和方法
公开(公告)号：EP1273094A2
公开(公告)日：2003-01-08
申请号：EP01920721.6
申请日：2001-03-23
申请人： Onix Microsystems Inc.
发明人： BEHIN, Behrang , PANNU, Satinderpall, S.
IPC分类号： H02N1/00 , B81B3/00 , B81B5/00
CPC分类号： G02B6/357 , B81B3/0021 , B81B2201/033 , B81B2201/042 , B81B2201/045 , B81B2203/0136 , B81B2203/0181 , B81B2203/058 , B81C1/0015 , B81C1/00214 , B81C1/00396 , G02B6/3518 , G02B6/3524 , G02B6/3584 , G02B6/359 , G02B26/0833 , H02N1/008 , Y10T29/49005 , Y10T29/49126 , Y10T29/49155 , Y10T29/49156
摘要： A multi-layer vertical comb-drive actuator includes a first comb structure having a plurality of first comb fingers (14) and a second comb structure having a plurality of second comb fingers (24), wherein the first and second comb fingers are substantially interdigitated. The first and second comb fingers may include two or more stacked conductive layers electrically isolated from each other by an insulating layer or an air gap. Alternatively, either the first or second comb fingers may include only one conductive layer. An application of a voltage (15) between the first and second comb fingers causes the second comb structure to move relative to the first comb structure. The present invention includes a 2D-gimble configuration to rotate a movable element along two axes.

7. 发明公开

EP3029445A3 RELATIVE AND ABSOLUTE PRESSURE SENSOR COMBINED ON CHIP 有权
标题翻译：合并，相对绝对压力传感器芯片
公开(公告)号：EP3029445A3
公开(公告)日：2016-08-03
申请号：EP15197628.9
申请日：2015-12-02
申请人： Melexis Technologies NV , X-FAB Semiconductor Foundries AG
发明人： VAN DER WIEL, Appolonius Jacobus , SCHWARZ, Uwe , DE WINTER, Rudi
IPC分类号： G01L15/00 , G01L9/00 , B81B7/04 , B81C1/00 , G01F1/34 , G01F15/14
CPC分类号： G01F1/34 , B81B7/04 , B81B2201/0264 , B81C1/00214 , G01F15/14 , G01L9/008 , G01L15/00
摘要： A method (100) for manufacturing a system (200) in a wafer (210) for measuring an absolute and a relative pressure. In a first step (110) a shallow (220) and a deep (230) cavity are etched in the wafer (210). In a second step (120) a top wafer (510) is applied and in a third step (125) the top wafer is thinned for forming a first respectively second membrane (262, 272) over the shallow respectively deep cavity (220, 230), and for forming in the top wafer (510) first respectively second bondpads (261, 271) at the first respectively second membrane (262, 272) resulting in a first respectively second sensor (260, 270). A third step (130) back grinding the wafer (210) resulting in a opened deep cavity (230) and a still closed shallow cavity (220). The first bondpads (261) of the first sensor (260) for measuring an absolute pressure and the second bondpads (271) of the second sensor (270) a relative pressure. The etching in the first step defines the edges of the first membrane and of the second membrane in respectively the sensors formed from the shallow and the deep cavity.

8. 发明公开

EP3029445A2 RELATIVE AND ABSOLUTE PRESSURE SENSOR COMBINED ON CHIP 有权
标题翻译：芯片上组合相对和绝对压力传感器
公开(公告)号：EP3029445A2
公开(公告)日：2016-06-08
申请号：EP15197628.9
申请日：2015-12-02
申请人： Melexis Technologies NV , X-FAB Semiconductor Foundries AG
发明人： VAN DER WIEL, Appolonius Jacobus , SCHWARZ, Uwe , DE WINTER, Rudi
IPC分类号： G01L15/00 , G01L9/00
CPC分类号： G01F1/34 , B81B7/04 , B81B2201/0264 , B81C1/00214 , G01F15/14 , G01L9/008 , G01L15/00
摘要： A method (100) for manufacturing a system (200) in a wafer (210) for measuring an absolute and a relative pressure. In a first step (110) a shallow (220) and a deep (230) cavity are etched in the wafer (210). In a second step (120) a top wafer (510) is applied and in a third step (125) the top wafer is thinned for forming a first respectively second membrane (262, 272) over the shallow respectively deep cavity (220, 230), and for forming in the top wafer (510) first respectively second bondpads (261, 271) at the first respectively second membrane (262, 272) resulting in a first respectively second sensor (260, 270). A third step (130) back grinding the wafer (210) resulting in a opened deep cavity (230) and a still closed shallow cavity (220). The first bondpads (261) of the first sensor (260) for measuring an absolute pressure and the second bondpads (271) of the second sensor (270) a relative pressure. The etching in the first step defines the edges of the first membrane and of the second membrane in respectively the sensors formed from the shallow and the deep cavity.
摘要翻译：一种用于制造用于测量绝对压力和相对压力的晶片（210）中的系统（200）的方法（100）。在第一步骤（110）中，在晶片（210）中蚀刻浅（220）和深（230）腔。在第二步骤（120）中施加顶部晶片（510），并且在第三步骤（125）中，将顶部晶片变薄以在浅的相应深腔（220,230）上形成第一和第二隔膜（262,272）），并且用于在第一和第二薄膜（262,272）处在顶部晶片（510）中分别形成第一和第二分别的第二键合焊盘（261,271），从而形成第一或第二传感器（260,270）。第三步（130）背面研磨晶片（210），产生敞开的深腔（230）和仍然闭合的浅腔（220）。用于测量绝对压力的第一传感器（260）的第一键合焊盘（261）和第二传感器（270）的第二键合焊盘（271）具有相对压力。第一步骤中的蚀刻分别限定了由浅腔和深腔形成的传感器中的第一膜和第二膜的边缘。

9. 发明公开

EP1461287A2 HYBRID MEMS FABRICATION METHOD AND NEW OPTICAL MEMS DEVICE 审中-公开
标题翻译：用于生产混合MEMS和新的光学MEMS器件
公开(公告)号：EP1461287A2
公开(公告)日：2004-09-29
申请号：EP02795482.5
申请日：2002-07-17
申请人： Rockwell Scientific Licensing, LLC
发明人： DE NATALE, Jeffrey, F.
IPC分类号： B81B3/00 , G02B26/08
CPC分类号： G02B6/3518 , B81B3/0083 , B81B2201/042 , B81C1/00214 , B81C2201/053 , G02B6/3584
摘要： A new hybrid method of fabricating optical micro electro mechanical system (MEMS) devices is disclosed that uses both bulk and surface micromachining techniques, and a new optical MEMS device is also disclosed that is fabricated using the new method. The method includes the step of mounting a handle layer to one or more layers of MEMS structural material (12). Layers of structural and sacrificial material are then built up on the MEMS structural material using surface micromachining techniques (14). Drive electronics are mounted to the layers of structural and sacrificial material (17). The handle layer is removed (18) to reveal the MEMS structural layer and the sacrificial material within the various layers is dissolved (20). The new method is particularly applicable to fabricating optical MEMS devices, with the handle layer (54) being adjacent to a Si mirror layer (52). The surface micromachining layers form electrode (66) and spring structures (67, 68). Drive electronics (92) are then mounted on the layers of structural material, so that a bias can be applied to the MEMS structures. The handle layer (54) is removed from the mirror layer (52) to reveal the mirror's reflective surface, and the sacrificial material (64) is dissolved away, freeing the MEMS structures to operate. For optical or other MEMS arrays, a linking framework (70) can be included to attach the MEMS devices.

10. 发明公开

EP1218790A2 MICROELECTROMECHANICAL DEVICE WITH MOVING ELEMENT 审中-公开
标题翻译：具有运动元件的微电子机械装置
公开(公告)号：EP1218790A2
公开(公告)日：2002-07-03
申请号：EP00946255.7
申请日：2000-07-20
申请人： Memlink Ltd.
发明人： CHERTKOW, Roberto, Igal
IPC分类号： G02B26/02
CPC分类号： H04Q11/0005 , B81B3/0021 , B81B2201/045 , B81B2203/051 , B81C1/00214 , G02B6/266 , G02B6/3514 , G02B6/3518 , G02B6/3556 , G02B6/357 , G02B6/3572 , G02B6/3576 , G02B6/3578 , G02B6/3584 , G02B6/423 , H01H2001/0084 , H04Q2011/0026 , H04Q2011/003 , H04Q2011/0056 , H04Q2011/0058
摘要： A microelectromechanical (MEMS) device (100) has a substrate (102) and a generally planar moving element (106), such as a mirror, disposed in parallel to the surface (108) of the substrate. An actuator is operatively engageable with the moving element (106) for selectively actuating the moving element (106) between a first position in a plane horizontal to the surface of the substrate and a second position in that plane. The MEMS device (100) may be effectively used as an optical switch. Various different actuators can be used. Preferably, the device is fabricated using a surface micromachining process.
摘要翻译：微机电（MEMS）器件（100）具有衬底（102）和平行于衬底的表面（108）设置的大致平面的移动元件（106），例如反射镜。致动器可操作地与移动元件（106）接合，用于选择性地致动移动元件（106）在水平于基板表面的平面中的第一位置与该平面中的第二位置之间。 MEMS器件（100）可以有效地用作光开关。可以使用各种不同的致动器。优选地，该装置使用表面微机械加工工艺来制造。

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