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1. 发明公开

EP3029445A3 RELATIVE AND ABSOLUTE PRESSURE SENSOR COMBINED ON CHIP 有权
标题翻译：合并，相对绝对压力传感器芯片
公开(公告)号：EP3029445A3
公开(公告)日：2016-08-03
申请号：EP15197628.9
申请日：2015-12-02
申请人： Melexis Technologies NV , X-FAB Semiconductor Foundries AG
发明人： VAN DER WIEL, Appolonius Jacobus , SCHWARZ, Uwe , DE WINTER, Rudi
IPC分类号： G01L15/00 , G01L9/00 , B81B7/04 , B81C1/00 , G01F1/34 , G01F15/14
CPC分类号： G01F1/34 , B81B7/04 , B81B2201/0264 , B81C1/00214 , G01F15/14 , G01L9/008 , G01L15/00
摘要： A method (100) for manufacturing a system (200) in a wafer (210) for measuring an absolute and a relative pressure. In a first step (110) a shallow (220) and a deep (230) cavity are etched in the wafer (210). In a second step (120) a top wafer (510) is applied and in a third step (125) the top wafer is thinned for forming a first respectively second membrane (262, 272) over the shallow respectively deep cavity (220, 230), and for forming in the top wafer (510) first respectively second bondpads (261, 271) at the first respectively second membrane (262, 272) resulting in a first respectively second sensor (260, 270). A third step (130) back grinding the wafer (210) resulting in a opened deep cavity (230) and a still closed shallow cavity (220). The first bondpads (261) of the first sensor (260) for measuring an absolute pressure and the second bondpads (271) of the second sensor (270) a relative pressure. The etching in the first step defines the edges of the first membrane and of the second membrane in respectively the sensors formed from the shallow and the deep cavity.

2. 发明公开

EP3029445A2 RELATIVE AND ABSOLUTE PRESSURE SENSOR COMBINED ON CHIP 有权
标题翻译：芯片上组合相对和绝对压力传感器
公开(公告)号：EP3029445A2
公开(公告)日：2016-06-08
申请号：EP15197628.9
申请日：2015-12-02
申请人： Melexis Technologies NV , X-FAB Semiconductor Foundries AG
发明人： VAN DER WIEL, Appolonius Jacobus , SCHWARZ, Uwe , DE WINTER, Rudi
IPC分类号： G01L15/00 , G01L9/00
CPC分类号： G01F1/34 , B81B7/04 , B81B2201/0264 , B81C1/00214 , G01F15/14 , G01L9/008 , G01L15/00
摘要： A method (100) for manufacturing a system (200) in a wafer (210) for measuring an absolute and a relative pressure. In a first step (110) a shallow (220) and a deep (230) cavity are etched in the wafer (210). In a second step (120) a top wafer (510) is applied and in a third step (125) the top wafer is thinned for forming a first respectively second membrane (262, 272) over the shallow respectively deep cavity (220, 230), and for forming in the top wafer (510) first respectively second bondpads (261, 271) at the first respectively second membrane (262, 272) resulting in a first respectively second sensor (260, 270). A third step (130) back grinding the wafer (210) resulting in a opened deep cavity (230) and a still closed shallow cavity (220). The first bondpads (261) of the first sensor (260) for measuring an absolute pressure and the second bondpads (271) of the second sensor (270) a relative pressure. The etching in the first step defines the edges of the first membrane and of the second membrane in respectively the sensors formed from the shallow and the deep cavity.
摘要翻译：一种用于制造用于测量绝对压力和相对压力的晶片（210）中的系统（200）的方法（100）。在第一步骤（110）中，在晶片（210）中蚀刻浅（220）和深（230）腔。在第二步骤（120）中施加顶部晶片（510），并且在第三步骤（125）中，将顶部晶片变薄以在浅的相应深腔（220,230）上形成第一和第二隔膜（262,272）），并且用于在第一和第二薄膜（262,272）处在顶部晶片（510）中分别形成第一和第二分别的第二键合焊盘（261,271），从而形成第一或第二传感器（260,270）。第三步（130）背面研磨晶片（210），产生敞开的深腔（230）和仍然闭合的浅腔（220）。用于测量绝对压力的第一传感器（260）的第一键合焊盘（261）和第二传感器（270）的第二键合焊盘（271）具有相对压力。第一步骤中的蚀刻分别限定了由浅腔和深腔形成的传感器中的第一膜和第二膜的边缘。

3. 发明授权

EP3358311B1 SENSOR SHIELDING FOR HARSH MEDIA APPLICATIONS 有权
公开(公告)号：EP3358311B1
公开(公告)日：2019-09-11
申请号：EP17154442.2
申请日：2017-02-02
申请人： Melexis Technologies NV
发明人： VAN DER WIEL, Appolonius Jacobus
IPC分类号： G01D21/00

4. 发明授权

EP3118599B1 PRESSURE SENSOR WITH BUILT IN STRESS BUFFER 有权
标题翻译：内置压力缓冲器的压力传感器
公开(公告)号：EP3118599B1
公开(公告)日：2018-04-11
申请号：EP16173621.0
申请日：2016-06-09
申请人： Melexis Technologies NV
发明人： VAN DER WIEL, Appolonius Jacobus
IPC分类号： G01L9/00
CPC分类号： G01L19/0618 , G01L9/0048 , G01L9/0055 , G01L19/04 , H01L2224/48091 , H01L2924/00014
摘要： A semiconductor pressure sensor (1) comprising: a semiconductor substrate (2) having a through-opening (3) extending from a top surface (4) to a bottom surface (5) of the substrate (2), the through-opening (3) forming a space between an inner part (12) and an outer part (11) of said substrate; a pressure responsive structure arranged on said inner part (12); a number of flexible elements (7, 13) extending from said inner part (12) to said outer part (11) for suspending the inner part (12) within said through-opening (3); the through-opening being at least partly filled with an anelastic material. A method of producing such a semiconductor pressure sensor.

5. 发明公开

EP3995802A1 DUAL PRESSURE SENSOR 审中-公开
公开(公告)号：EP3995802A1
公开(公告)日：2022-05-11
申请号：EP20206061.2
申请日：2020-11-05
申请人： Melexis Technologies NV
发明人： VERGAUWEN, Johan , MAES, Ben , RAMEZANI, Maliheh , VAN DER WIEL, Appolonius Jacobus
IPC分类号： G01L9/04 , G01L9/06 , G01L19/06 , G01L27/00
摘要： A controller (120) configured for monitoring disturbances of a pressure sensor assembly (110), the pressure sensor assembly (110) comprising at least two sensors (112, 114), wherein the sensors (112, 114) are configured for measuring a pressure and wherein the at least two sensors (112, 114) have a sensor dependent measurement sensitivity Sm for the pressure, and at least one of the sensors (112, 114) is sensitive for a disturbance with a sensor dependent disturbance sensitivity Sd, wherein a ratio Sm/Sd of the measurement sensitivity and the disturbance sensitivity is different for at least two sensors (112, 114), the controller (120) being configured for detecting the disturbance by comparing outputs of the at least two sensors.

6. 发明公开

EP3582257A1 SEMICONDUCTOR DEVICE FOR USE IN HARSH MEDIA 有权
公开(公告)号：EP3582257A1
公开(公告)日：2019-12-18
申请号：EP18178068.5
申请日：2018-06-15
申请人： Melexis Technologies NV
发明人： VAN DER WIEL, Appolonius Jacobus
IPC分类号： H01L21/768 , H01L21/285 , B81B7/00
摘要： A semiconductor device (100) comprising a first and second doped semiconductor layer (112, 122), an oxide layer (127) covering the first and second layer (112, 122), and an interconnect and/or a conductive path (121); the interconnect which electrically connects the first and second layer (112, 122) comprises a metal alloy (124) which has a first part in contact with the first layer (112) and a second part in contact with the second layer (122), wherein a part of the metal alloy between the first and the second part crosses over a sidewall (133) of the second layer (122); the conductive path (121) comprises polycrystalline semiconductor material; at least one electronic component (115) is formed in the first and/or second layer (112, 122); the semiconductor device moreover comprises a stoichiometric passivation layer (128) which covers the first and second layer (112, 122) and the oxide layer (127).

7. 发明授权

EP2847564B1 METHOD AND DEVICE FOR SENSING ISOTROPIC STRESS AND PROVIDING A COMPENSATION FOR THE PIEZO-HALL EFFECT 有权
公开(公告)号：EP2847564B1
公开(公告)日：2019-09-04
申请号：EP13724763.1
申请日：2013-05-07
申请人： Melexis Technologies NV
发明人： HUBER, Samuel , RAMAN, Johan , ROMBOUTS, Pieter , VAN DER WIEL, Appolonius Jacobus
IPC分类号： G01R33/00 , G01L1/12 , G01L1/22 , G01L1/18 , G01R33/07

8. 发明公开

EP3358311A1 SENSOR SHIELDING FOR HARSH MEDIA APPLICATIONS 有权
公开(公告)号：EP3358311A1
公开(公告)日：2018-08-08
申请号：EP17154442.2
申请日：2017-02-02
申请人： Melexis Technologies NV
发明人： VAN DER WIEL, Appolonius Jacobus
IPC分类号： G01D21/00
CPC分类号： H01L23/552 , G01D21/00 , H01L21/28518 , H01L21/76864 , H01L23/3171 , H01L23/3192 , H01L23/485 , H01L23/5225 , H01L23/5226 , H01L23/53242 , H01L23/53252 , H01L23/53266 , H01L24/03 , H01L24/05 , H01L29/0684 , H01L29/456 , H01L29/84 , H01L29/8605 , H01L2224/0345 , H01L2224/03848 , H01L2224/05664 , H01L2224/05669
摘要： The present invention relates to a sensor device (1) for use in harsh media, comprising a silicon die (2) that comprises a lowly doped region (3). The device comprises a contact layer (4), contacting the silicon die. The contact layer comprises a refractory metal and an ohmic contact (8) to the silicon die via a silicide (5) of the refractory metal. The device comprises a noble metal layer (6) provided over the contact layer (5) such that the contact layer is completely covered by the noble metal layer. The noble metal layer comprises palladium, platinum or a metal alloy of palladium and/or platinum. The noble metal layer (6) is patterned to form an interconnect structure and a contact connecting via the contact layer (4) to the ohmic contact (8). The noble metal layer (6) is adapted for providing a shield to prevent modulation of the lowly doped region by surface charges. The noble metal layer may advantageously protect the contact layer against harsh media in an external environment of the sensor device.

9. 发明公开

EP3035015A1 IR SENSOR FOR IR SENSING BASED ON POWER CONTROL 有权
标题翻译： IR红外传感器基于测量的电源控制
公开(公告)号：EP3035015A1
公开(公告)日：2016-06-22
申请号：EP15198490.3
申请日：2015-12-08
申请人： Melexis Technologies NV
发明人： VAN DER WIEL, Appolonius Jacobus
IPC分类号： G01J5/04 , G01J1/16 , G01J5/02 , G01J5/06 , G01J5/12 , G01J5/14 , G01J1/42 , G01J5/20
CPC分类号： G01J1/4228 , G01J1/1626 , G01J5/0225 , G01J5/024 , G01J5/0285 , G01J5/045 , G01J5/06 , G01J5/061 , G01J5/12 , G01J5/14 , G01J5/20 , G01J2005/0048 , G01J2005/063 , G01J2005/065 , G01J2005/066 , G01J2005/068
摘要： A semiconductor device (1) for measuring IR radiation is disclosed. It comprises a substrate (2) and a cap (3) enclosing a cavity (12,), a sensor pixel (10) in the cavity, comprising a first absorber (11) for receiving said IR radiation, a first heater (13), first temperature measurement means (14) for measuring a first temperature (Ts); a reference pixel (10) in the same cavity, comprising a second absorber (21) shielded from said IR radiation, a second heater (23), and second temperature measurement means (24) for measuring a second temperature (Tr); a control circuit (4) for applying a first/second power (Ps, Pr) to the first/second heater (13, 23) such that the first temperature (Ts) equals the second temperature (Tr); and an output circuit (5) for generating an output signal indicative of the IR radiation (Pir) based on a difference between the first and second power (Ps, Pr).

10. 发明公开

EP3382362A1 PRESSURE SENSOR WITH BUILT IN STRESS BUFFER 审中-公开
公开(公告)号：EP3382362A1
公开(公告)日：2018-10-03
申请号：EP18166696.7
申请日：2016-06-09
申请人： Melexis Technologies NV
发明人： VAN DER WIEL, Appolonius Jacobus
IPC分类号： G01L9/00
CPC分类号： G01L19/0618 , G01L9/0048 , G01L9/0055 , G01L19/04 , H01L2224/48091 , H01L2924/00014
摘要： A semiconductor pressure sensor (1) comprising: a semiconductor substrate (2) having a through-opening (3) extending from a top surface (4) to a bottom surface (5) of the substrate (2), the through-opening (3) forming a space between an inner part (12) and an outer part (11) of said substrate; a pressure responsive structure arranged on said inner part (12); a number of flexible elements (7, 13) extending from said inner part (12) to said outer part (11) for suspending the inner part (12) within said through-opening (3); the through-opening being sealed with an anelastic material.
A method of producing such a semiconductor pressure sensor.

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