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1. 发明授权

US06517913B1 Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions 失效
标题翻译：从底物处理设备排放物减少全氟化合物气体的方法和装置
公开(公告)号：US06517913B1
公开(公告)日：2003-02-11
申请号：US09632502
申请日：2000-08-03
申请人： David Cheung , Sebastien Raoux , Judy H. Huang , William N. Taylor, Jr. , Mark Fodor , Kevin Fairbairn
发明人： David Cheung , Sebastien Raoux , Judy H. Huang , William N. Taylor, Jr. , Mark Fodor , Kevin Fairbairn
IPC分类号： C23C1644
CPC分类号： H01J37/32844 , B01D45/06 , B01D53/32 , B01D53/46 , B01D2257/206 , B01D2259/818 , B01J19/08 , B01J19/088 , B01J19/126 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , C23C16/4405 , C23C16/4412 , H01J37/3244 , H01J2237/022 , H05H1/46 , H05H2001/4622 , H05H2001/4667 , H05H2245/1215 , Y02C20/30 , Y02P70/605
摘要： An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.
摘要翻译：用于将从半导体处理设备排出的PFC气体转化为较少有害的非PFC气体的设备。该装置的一个实施例包括硅滤波器和等离子体产生系统。等离子体发生系统从流出的PFC气体形成等离子体。来自等离子体的成分与过滤器中的硅和/或氧反应，并将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。另一实施例包括等离子体产生系统和颗粒捕集和收集系统。颗粒捕集和收集系统从产生这种残余物的沉积过程中捕集含硅残渣，等离子体产生系统从流出的PFC气体形成等离子体。来自等离子体的成分与收集的残余物反应，将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。

2. 发明授权

US06596085B1 Methods and apparatus for improved vaporization of deposition material in a substrate processing system 失效
标题翻译：用于改善衬底处理系统中沉积材料蒸发的方法和装置
公开(公告)号：US06596085B1
公开(公告)日：2003-07-22
申请号：US09495551
申请日：2000-02-01
申请人： John Vincent Schmitt , Shih-Hung Li , Christophe Marcadal , Anzhong Chang , Ling Chen
发明人： John Vincent Schmitt , Shih-Hung Li , Christophe Marcadal , Anzhong Chang , Ling Chen
IPC分类号： C23C1644
CPC分类号： C23C16/4486 , B01F3/04049
摘要： A deposition system for performing chemical vapor deposition comprising deposition chamber and a vaporizer coupled to said chamber. In one aspect, the vaporizer has a relatively short mixing passageway to mix a carrier gas with a liquid precursor to produce a fine aerosol-like dispersion of liquid precursor which is vaporized by a hot plate.
摘要翻译：一种用于执行化学气相沉积的沉积系统，包括沉积室和耦合到所述室的蒸发器。在一个方面，蒸发器具有相对短的混合通道，以将载气与液体前体混合，以产生由热板汽化的液体前体的细小的气溶胶状分散体。

3. 发明授权

US06479101B2 Method of coating a concave friction bearing 有权
标题翻译：凹面摩擦轴承涂层方法
公开(公告)号：US06479101B2
公开(公告)日：2002-11-12
申请号：US09794511
申请日：2001-02-27
申请人： Walter Gärtner
发明人： Walter Gärtner
IPC分类号： C23C1644
CPC分类号： C23C14/505
摘要： The invention relates to a method of producing an antifriction element (6), by means of which a coating is applied to at least one surface (10) of the antifriction element (6) under vacuum, by guiding the antifriction element (6) through a particle flow (4), which at least partially forms the coating, in a rotary motion about an axis perpendicular to the particle flow longitudinal median axis (5) or parallel with a length of a device containing the coating substance (2).
摘要翻译：本发明涉及一种制造减摩元件（6）的方法，通过该方法，通过将减摩元件（6）引导通过所述减摩元件（6）而在真空下将涂层施加到所述减摩元件（6）的至少一个表面（10）至少部分地形成涂层的颗粒流（4）以围绕垂直于颗粒流纵向中轴（5）的轴线的旋转运动或与包含涂层物质（2）的装置的长度平行地形成。

4. 发明授权

US06548113B1 Vacuum/gas phase reactor for dehydroxylation and alkylation of porous silica 失效
标题翻译：真空/气相反应器用于多羟基硅烷的脱羟基和烷基化
公开(公告)号：US06548113B1
公开(公告)日：2003-04-15
申请号：US09711666
申请日：2000-11-09
申请人： Jerome Birnbaum , Gary Maupin , Glen Dunham , Glen Fryxell , Suresh Baskaran
发明人： Jerome Birnbaum , Gary Maupin , Glen Dunham , Glen Fryxell , Suresh Baskaran
IPC分类号： C23C1644
CPC分类号： C01B37/02 , H01L21/31695 , Y10T428/249969 , Y10T428/249972
摘要： Vacuum/gas phase reactor embodiments used in gas phase dehydroxylation and alkylation reactions are described in which the substrate could be subjected to high vacuum, heated to target temperature, and treated with silane as quickly and efficiently as possible. To better facilitate the silylation and to increase the efficiency of the process, the reactor is designed to contain quasi-catalytic surfaces which can act both as an “activator” to put species in a higher energy state or a highly activated state, and as a “scrubber” to eliminate possible poisons or reactive by-products generated in the silylation reactions. One described embodiment is a hot filament reactor having hot, preferably metallic, solid surfaces within the reactor's chamber in which wafers having mesoporous silicate films are treated. Another is an IR reactor having upper and lower quartz windows sealing the upper and lower periphery of an aluminum annulus to form a heated chamber. Finally, a flange reactor is described that includes a flange base and lid forming a tiny chamber therein for a wafer, the reactor being heated by conduction from a hot sand bath. The dehydroxylation and alkylation treatment of mesoporous silica films produces treated films exhibiting low dielectric constant and high elastic modulus.
摘要翻译：描述了用于气相脱羟基和烷基化反应的真空/气相反应器实施例，其中基底可经受高真空，加热至目标温度，并尽可能快速且有效地用硅烷处理。为了更好地促进甲硅烷基化和提高该方法的效率，反应器被设计成包含准催化剂表面，它们既可以作为“活化剂”来将物质置于更高能量状态或高活化状态，也可以作为 “洗涤器”来消除在甲硅烷化反应中产生的可能的毒物或反应性副产物。一个描述的实施方案是在反应器室内具有热的，优选金属的固体表面的热丝反应器，其中处理具有介孔硅酸盐膜的晶片。另一种是IR反应器，其具有密封铝环空的上下周边的上，下石英窗，以形成加热室。最后，描述了一种法兰反应器，其包括法兰基座和盖子，用于在晶片上形成微小的室，该反应器由热砂浴传导加热。介孔二氧化硅膜的脱羟基化和烷基化处理产生显示低介电常数和高弹性模量的处理膜。

5. 发明授权

US06263829B1 Process chamber having improved gas distributor and method of manufacture 失效
标题翻译：具有改进的气体分配器和制造方法的处理室
公开(公告)号：US06263829B1
公开(公告)日：2001-07-24
申请号：US09235861
申请日：1999-01-22
申请人： Gerhard Schneider , Edwin C. Weldon
发明人： Gerhard Schneider , Edwin C. Weldon
IPC分类号： C23C1644
CPC分类号： C23C16/45521 , C23C16/455
摘要： A process chamber 15 for processing a substrate 30, such as a semiconductor wafer, comprises a support 20 having a surface 25 for supporting the substrate 30. A gas distributor 50 in the chamber comprises a gas manifold 110 comprising at least one insert 140 having an orifice 115 for passing gas from the gas manifold 110 into the process chamber 15. Preferably, the gas manifold 110 extends about a perimeter 130 of the substrate 30 and comprises a plurality of inserts 140 made from dielectric material.
摘要翻译：用于处理衬底30（例如半导体晶片）的处理室15包括具有用于支撑衬底30的表面25的支撑件20.腔室中的气体分配器50包括气体歧管110，气体歧管110包括至少一个插入件140，其具有孔115用于将气体从气体歧管110传送到处理室15.优选地，气体歧管110围绕衬底30的周边130延伸，并且包括由介电材料制成的多个插入件140。

6. 发明授权

US06231923B1 Chemical vapor deposition of near net shape monolithic ceramic parts 有权
标题翻译：化学气相沉积近净形单块陶瓷零件
公开(公告)号：US06231923B1
公开(公告)日：2001-05-15
申请号：US09375734
申请日：1999-08-17
申请人： Alexander Teverovsky , James C. MacDonald , Lee Erich Burns
发明人： Alexander Teverovsky , James C. MacDonald , Lee Erich Burns
IPC分类号： C23C1644
CPC分类号： C23C16/4588 , C23C16/01 , C23C16/458
摘要： A method and apparatus for producing a coating or a near net shaped monolithic ceramic part by chemical vapor deposition, where the resultant coatings or parts consume less deposit material and require less machining. Mandrel substrates are closely designed for producing a specific, near net shaped final part, including negative relief features. Several of the mandrel substrates are mounted through centers in a spaced relationship on one or more rotable shafts as tooling for a chemical vapor deposition furnace. The tooling is installed in a chemical vapor deposition furnace so that the shafts are oriented perpendicular and the substrate planar surfaces are parallel to the flow pattern of reactant gases through the furnace. The shafts are rotated during the deposition process so that the mandrel substrates each receive a uniformly distributed ceramic deposit in the near net shape of the final part.
摘要翻译：一种用于通过化学气相沉积制造涂层或近网状整体陶瓷部件的方法和装置，其中所得的涂层或部件消耗较少的沉积材料并且需要较少的加工。心轴衬底被紧密地设计用于生产特定的近净形的最终部件，包括负的浮雕特征。几个心轴基板通过中心以一个或多个可旋转的轴间隔开地安装，作为用于化学气相沉积炉的工具。工具安装在化学气相沉积炉中，使得轴垂直取向，并且基板平面与通过炉的反应气体的流动图形平行。轴在沉积过程中旋转，使得心轴基板各自接收最终部件的近净形状的均匀分布的陶瓷沉积物。

7. 发明授权

US06805907B2 Method and apparatus for vapor generation and film deposition 有权
标题翻译：用于蒸气产生和膜沉积的方法和装置
公开(公告)号：US06805907B2
公开(公告)日：2004-10-19
申请号：US10154588
申请日：2002-05-24
申请人： James J. Sun , Benjamin Y. H. Liu
发明人： James J. Sun , Benjamin Y. H. Liu
IPC分类号： C23C1644
CPC分类号： C23C16/448
摘要： A vapor generator (19, 62) and connected chemical vapor deposition chamber (28) for providing a vapor for operations such as chemical vapor deposition has an atomizer (16, 16A, 38, 50) for forming an aerosol or droplet spray (36, 58, 74, 80) separate from a vaporization chamber (19, 62). The aerosol is passed into a heated vaporization chamber (19, 62) wherein the particles or droplets are flash vaporized and larger droplets are vaporized by direct contact with heated surfaces. The resulting gas/vapor stream is then used for chemical vapor deposition, in a separate chemical vapor deposition chamber (26). The vapor and gas stream is preferably passed through a restricted passageway (22, 44, 68) for mixing before being introduced into the chemical vapor deposition chamber (26).
摘要翻译：用于提供用于诸如化学气相沉积的操作的蒸汽的蒸汽发生器（19,62）和连接的化学气相沉积室（28）具有用于形成气溶胶或液滴喷雾的雾化器（16,16A，38,50） 58,74,80）与蒸发室（19,62）分离。气溶胶通入加热的蒸发室（19,62），其中颗粒或液滴被闪蒸，并且通过与加热的表面直接接触而使较大的液滴蒸发。然后在单独的化学气相沉积室（26）中将所得的气体/蒸气流用于化学气相沉积。蒸汽和气体流优选通过限制通道（22,44,68），以在被引入化学气相沉积室（26）之前进行混合。

8. 发明授权

US06592941B1 Aluminum and silicon diffusion coating 失效
标题翻译：铝和硅扩散涂层
公开(公告)号：US06592941B1
公开(公告)日：2003-07-15
申请号：US08745199
申请日：1996-11-08
申请人： George T. Bayer , Kim A. Wynns
发明人： George T. Bayer , Kim A. Wynns
IPC分类号： C23C1644
CPC分类号： C23C10/52 , Y10T428/12458 , Y10T428/12736
摘要： A method of forming an aluminum silicon diffusion coating on a surface of an alloy product utilizes a diffusion mixture containing by weight 1% to 5% aluminum, 0.5% to 5% silicon, 0.5% to 3% ammonium halide activator and the balance an inert filler. The product to be coated is placed in a retort with the diffusion mixture covering the product surfaces to be coated. Upon heating aluminum and silicon will diffuse onto the product surfaces forming the aluminum and silicon diffusion coating.
摘要翻译：在合金产品的表面上形成铝硅扩散涂层的方法利用含有1％至5％铝，0.5％至5％硅，0.5％至3％卤化铵活化剂的扩散混合物，余量为惰性填料。将待涂覆的产品放置在蒸煮器中，扩散混合物覆盖待涂覆的产品表面。在加热时，铝和硅将扩散到形成铝和硅扩散涂层的产品表面上。

9. 发明授权

US06280792B1 Surface-treating process using support member having plate-like elements 有权
标题翻译：使用具有板状元件的支撑构件进行表面处理
公开(公告)号：US06280792B1
公开(公告)日：2001-08-28
申请号：US09407304
申请日：1999-09-29
申请人： Yoshimi Tochishita , Yoshio Fujiwara , Yoshihiro Asagai , Ken Ohtagaki
发明人： Yoshimi Tochishita , Yoshio Fujiwara , Yoshihiro Asagai , Ken Ohtagaki
IPC分类号： C23C1644
CPC分类号： C23C14/505
摘要： A process for surface-treating a plurality of works which includes the step of surface-treating the works in a treating chamber, while rotating the works about their axes in spaced apart states, wherein the surface treatment is a vapor deposition on a sintered article and the support member includes plate-like elements openably and closably foldable in a lengthwise direction, the plate-like elements defining a plurality of narrow sections each having a length in opened states corresponding to an inside diameter of a work. The support member may also include an upper cage and a lower cage which are openable and closable in a lengthwise direction.
摘要翻译：一种用于表面处理多个工件的方法，其包括在处理室中对工件进行表面处理的步骤，同时围绕其轴线间隔开的状态旋转工件，其中表面处理是在烧结制品上的气相沉积，支撑构件包括沿长度方向可开启和关闭地折叠的板状元件，板状元件限定多个狭窄部分，每个狭窄部分具有对应于工件内径的打开状态的长度。支撑构件还可以包括在长度方向上可打开和关闭的上保持架和下保持架。

10. 发明授权

US06774019B2 Incorporation of an impurity into a thin film 有权
公开(公告)号：US06774019B2
公开(公告)日：2004-08-10
申请号：US10063846
申请日：2002-05-17
申请人： Charles Augustus Choate, IV , Timothy S. Hayes , Michael Raymond Lunn , Paul R. Nisson , Dean W. Siegel , Michael C. Triplett
发明人： Charles Augustus Choate, IV , Timothy S. Hayes , Michael Raymond Lunn , Paul R. Nisson , Dean W. Siegel , Michael C. Triplett
IPC分类号： C23C1644
CPC分类号： C30B29/06 , C23C16/4485 , C30B25/14
摘要： The present invention describes a method of forming a thin film on a substrate arranged in a deposition system comprising the step of introducing a pre-determined amount of an impurity in a confined volume in the deposition system. One or more gases are introduced into the deposition system for forming the thin film. The impurity is removed from the confined volume in a gas phase during formation of the thin film. The impurity in the gas phase is incorporated into the thin film.

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