专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06187072B1 Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions 失效
标题翻译：从底物处理设备排放物减少全氟化合物气体的方法和装置
公开(公告)号：US06187072B1
公开(公告)日：2001-02-13
申请号：US08741272
申请日：1996-10-30
申请人： David Cheung , Sebastien Raoux , Judy H. Huang , William N. Taylor, Jr. , Mark Fodor , Kevin Fairbairn
发明人： David Cheung , Sebastien Raoux , Judy H. Huang , William N. Taylor, Jr. , Mark Fodor , Kevin Fairbairn
IPC分类号： B01D4624
CPC分类号： H01J37/32844 , B01D45/06 , B01D53/32 , B01D53/46 , B01D2257/206 , B01D2259/818 , B01J19/08 , B01J19/088 , B01J19/126 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , C23C16/4405 , C23C16/4412 , H01J37/3244 , H01J2237/022 , H05H1/46 , H05H2001/4622 , H05H2001/4667 , H05H2245/1215 , Y02C20/30 , Y02P70/605
摘要： An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.
摘要翻译：用于将从半导体处理设备排出的PFC气体转化为较少有害的非PFC气体的设备。该装置的一个实施例包括硅滤波器和等离子体产生系统。等离子体发生系统从流出的PFC气体形成等离子体。来自等离子体的成分与过滤器中的硅和/或氧反应，并将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。另一实施例包括等离子体产生系统和颗粒捕集和收集系统。颗粒捕集和收集系统从产生这种残余物的沉积过程中捕集含硅残渣，等离子体产生系统从流出的PFC气体形成等离子体。来自等离子体的成分与收集的残余物反应，将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。

2. 发明授权

US06517913B1 Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions 失效
标题翻译：从底物处理设备排放物减少全氟化合物气体的方法和装置
公开(公告)号：US06517913B1
公开(公告)日：2003-02-11
申请号：US09632502
申请日：2000-08-03
申请人： David Cheung , Sebastien Raoux , Judy H. Huang , William N. Taylor, Jr. , Mark Fodor , Kevin Fairbairn
发明人： David Cheung , Sebastien Raoux , Judy H. Huang , William N. Taylor, Jr. , Mark Fodor , Kevin Fairbairn
IPC分类号： C23C1644
CPC分类号： H01J37/32844 , B01D45/06 , B01D53/32 , B01D53/46 , B01D2257/206 , B01D2259/818 , B01J19/08 , B01J19/088 , B01J19/126 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , C23C16/4405 , C23C16/4412 , H01J37/3244 , H01J2237/022 , H05H1/46 , H05H2001/4622 , H05H2001/4667 , H05H2245/1215 , Y02C20/30 , Y02P70/605
摘要： An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.
摘要翻译：用于将从半导体处理设备排出的PFC气体转化为较少有害的非PFC气体的设备。该装置的一个实施例包括硅滤波器和等离子体产生系统。等离子体发生系统从流出的PFC气体形成等离子体。来自等离子体的成分与过滤器中的硅和/或氧反应，并将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。另一实施例包括等离子体产生系统和颗粒捕集和收集系统。颗粒捕集和收集系统从产生这种残余物的沉积过程中捕集含硅残渣，等离子体产生系统从流出的PFC气体形成等离子体。来自等离子体的成分与收集的残余物反应，将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。

3. 发明授权

US06194628B1 Method and apparatus for cleaning a vacuum line in a CVD system 失效
标题翻译：用于在CVD系统中清洁真空管线的方法和装置
公开(公告)号：US06194628B1
公开(公告)日：2001-02-27
申请号：US08533174
申请日：1995-09-25
申请人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastien Raoux , Mark Fodor
发明人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastien Raoux , Mark Fodor
IPC分类号： B09B300
CPC分类号： H01J37/32862 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , C23C16/4405 , C23C16/4412 , Y02C20/30 , Y02P70/605
摘要： An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.
摘要翻译：一种用于防止半导体处理装置的真空排气管线内的颗粒物质和残渣积聚的装置。该装置使用RF能量来形成从半导体处理室排出的颗粒物质的成分进入等离子体状态，使得这些组分反应以形成可被泵送通过真空管线的气态产物。该装置可以包括收集室，该收集室被构造和布置成收集流过该装置的颗粒物质并且阻止颗粒物质从该装置中流出。该装置还可以包括静电收集器以增强收集室中的颗粒收集并进一步抑制颗粒物质的排出。

4. 发明授权

US06680420B2 Apparatus for cleaning an exhaust line in a semiconductor processing system 失效
标题翻译：用于在半导体处理系统中清洁排气管线的装置
公开(公告)号：US06680420B2
公开(公告)日：2004-01-20
申请号：US09730145
申请日：2000-12-04
申请人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastien Raoux , Mark Fodor
发明人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastien Raoux , Mark Fodor
IPC分类号： B09B300
CPC分类号： H01J37/32862 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , C23C16/4405 , C23C16/4412 , Y02C20/30 , Y02P70/605
摘要： An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.
摘要翻译：一种用于防止半导体处理装置的真空排气管线内的颗粒物质和残渣积聚的装置。该装置使用RF能量来激发从半导体处理室排出的颗粒物质的成分进入等离子体状态，使得这些组分反应以形成可被泵送通过真空管线的气态产物。该装置可以包括收集室，该收集室被构造和布置成收集流过该装置的颗粒物质并且阻止颗粒物质从装置中流出。该装置还可以包括静电收集器以增强收集室中的颗粒收集并进一步抑制颗粒物质的排出。

5. 发明授权

US06193802B1 Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment 失效
标题翻译：用于基板加工设备的原位真空管线平行平板设备
公开(公告)号：US06193802B1
公开(公告)日：2001-02-27
申请号：US08741230
申请日：1996-10-30
申请人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastien Raoux , Mark Fodor
发明人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastien Raoux , Mark Fodor
IPC分类号： C23C1600
CPC分类号： B01J19/08 , B01D45/06 , B01D53/32 , B01D53/46 , B01D2257/206 , B01D2259/818 , B01J19/088 , B01J19/126 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , C23C16/4405 , C23C16/4412 , H01J37/3244 , H01J37/32844 , H01J2237/022 , H05H1/46 , H05H2001/4622 , H05H2001/4667 , H05H2245/1215 , Y02C20/30 , Y02P70/605
摘要： An apparatus for minimizing deposition in an exhaust line of a substrate processing chamber. The apparatus includes first and second electrodes having opposing surfaces that define a fluid conduit between them. The fluid conduit includes an inlet, an outlet and a collection chamber between the inlet and the outlet. The apparatus is connected at its inlet to receive the exhaust of the substrate processing chamber. The collection chamber is structured and arranged to collect particulate matter flowing through the fluid conduit and to inhibit egress of the particulate matter from the collection chamber. A plasma generation system supplies power to the electrodes to form a plasma from etchant gases within the fluid conduit. Constituents from the plasma react with the particulate matter collected in the collection chamber to form gaseous products that may be pumped out of the fluid conduit. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.
摘要翻译：一种用于最小化衬底处理室的排气管线中沉积的装置。该装置包括具有在它们之间限定流体导管的相对表面的第一和第二电极。流体导管包括在入口和出口之间的入口，出口和收集室。该设备在其入口处连接以接收衬底处理室的排气。收集室被构造和布置成收集流过流体导管的颗粒物质并且抑制颗粒物质从收集室排出。等离子体发生系统向电极供电以从流体导管内的蚀刻剂气体形成等离子体。来自等离子体的成分与收集室中收集的颗粒物质发生反应，形成可以从流体导管泵出的气体产物。该装置还可以包括静电收集器以增强收集室中的颗粒收集并进一步抑制颗粒物质的排出。

6. 发明授权

US6098568A Mixed frequency CVD apparatus 失效
标题翻译：混合频率CVD装置
公开(公告)号：US6098568A
公开(公告)日：2000-08-08
申请号：US980520
申请日：1997-12-01
申请人： Sebastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
发明人： Sebastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
IPC分类号： H05H1/46 , C23C16/505 , C23C16/509 , C23C16/517 , H01J37/32 , H01L21/31 , C23C16/00
CPC分类号： H01J37/32174 , C23C16/5096 , C23C16/517 , H01J37/32082
摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.
摘要翻译：一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

7. 发明授权

US06689930B1 Method and apparatus for cleaning an exhaust line in a semiconductor processing system 有权
标题翻译：用于清洁半导体处理系统中的排气管线的方法和装置
公开(公告)号：US06689930B1
公开(公告)日：2004-02-10
申请号：US09608577
申请日：2000-06-30
申请人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastion Raoux , Mark Fodor
发明人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastion Raoux , Mark Fodor
IPC分类号： B09B300
CPC分类号： H01J37/32862 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , C23C16/4405 , C23C16/4412 , Y02C20/30 , Y02P70/605
摘要： An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.
摘要翻译：一种用于防止半导体处理装置的真空排气管线内的颗粒物质和残渣积聚的装置。该装置使用RF能量来形成从半导体处理室排出的颗粒物质的成分进入等离子体状态，使得这些组分反应以形成可被泵送通过真空管线的气态产物。该装置可以包括收集室，该收集室被构造和布置成收集流过该装置的颗粒物质并且阻止颗粒物质从装置中流出。该装置还可以包括静电收集器以增强收集室中的颗粒收集并进一步抑制颗粒物质的排出。

8. 发明授权

US06358573B1 Mixed frequency CVD process 有权
标题翻译：混合频率CVD工艺
公开(公告)号：US06358573B1
公开(公告)日：2002-03-19
申请号：US09585258
申请日：2000-06-02
申请人： Sébastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
发明人： Sébastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
IPC分类号： H05H124
CPC分类号： H01J37/32174 , C23C16/5096 , C23C16/517 , H01J37/32082
摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.
摘要翻译：一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

9. 发明授权

US06354241B1 Heated electrostatic particle trap for in-situ vacuum line cleaning of a substrated processing 有权
标题翻译：加热静电颗粒捕集器，用于原位真空管线清洗的底层处理
公开(公告)号：US06354241B1
公开(公告)日：2002-03-12
申请号：US09354925
申请日：1999-07-15
申请人： Tsutomu Tanaka , Chau Nguyen , Hari Ponnekanti , Kevin Fairbairn , Sébastien Raoux , Mark Fodor
发明人： Tsutomu Tanaka , Chau Nguyen , Hari Ponnekanti , Kevin Fairbairn , Sébastien Raoux , Mark Fodor
IPC分类号： C23C1600
CPC分类号： C23C16/4412 , B01D49/00 , B01D51/02
摘要： An apparatus and method for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor-processing device. The apparatus includes a vessel chamber having an inlet, an outlet and a fluid conduit between the two that fluidly couples the outlet with the inlet. The fluid conduit includes first and second collection sections. The first collection section includes a first plurality of electrodes aligned parallel to a first plane and the second collection section includes a second plurality of electrodes aligned parallel to a second plane that is substantially perpendicular to the first plane. The electrodes are connected to a voltage differential to form an electrostatic particle collector that traps electrically charged particles and particulate matter flowing through the fluid conduit. Particles are collected on the electrodes within the fluid conduit during substrate processing operations such as CVD deposition steps. Then, during a chamber clean operation, unreacted etchant gases used to clean the substrate processing chamber are exhausted through the foreline and into the apparatus of the present invention where they react with the collected particles and powder to convert the solid material into gaseous matter that can be pumped through the foreline without damaging the vacuum pump or other processing equipment.
摘要翻译：一种用于防止半导体处理装置的真空排气管线内的颗粒物质和残渣积聚的装置和方法。该装置包括容器腔室，其具有入口，出口和两者之间的流体导管，以使出口与入口流体耦合。流体导管包括第一和第二收集部分。第一收集部分包括平行于第一平面排列的第一多个电极，第二收集部分包括平行于基本上垂直于第一平面的第二平面排列的第二多个电极。电极连接到电压差以形成静电颗粒收集器，其捕获带电粒子和流过流体导管的颗粒物质。在诸如CVD沉积步骤的衬底处理操作期间，将粒子收集在流体导管内的电极上。然后，在室清洁操作期间，用于清洁基板处理室的未反应的蚀刻剂气体通过前级管线排出并进入本发明的装置中，它们与收集的颗粒和粉末反应，将固体材料转化成气态物质，泵送通过前级管线，而不会损坏真空泵或其他加工设备。

10. 发明申请

US20050196971A1 Hardware development to reduce bevel deposition 审中-公开
标题翻译：硬件开发减少斜面沉积
公开(公告)号：US20050196971A1
公开(公告)日：2005-09-08
申请号：US11043724
申请日：2005-01-26
申请人： Soovo Sen , Mark Fodor , Visweswaren Sivaramakrishnan , Junting Liu
发明人： Soovo Sen , Mark Fodor , Visweswaren Sivaramakrishnan , Junting Liu
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01L21/31 , H01L21/469 , H01L21/76
CPC分类号： C23C16/4585 , C23C16/45521 , C23C16/5096
摘要： Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede the flow of gases to bevel regions. The geometric feature at the edge of the shadow ring directs the flow of gases toward the wafer in order to maintain thickness uniformity across the wafer while shadowing the edge. In another approach, a substrate heater/support is configured to flow purge gases to the edge of a substrate being supported. These purge gases prevent process gases from reaching the substrate edge and depositing material on bevel regions.
摘要翻译：根据本发明的实施例涉及可以单独使用或组合使用以减少或消除材料在半导体工件的斜面上的沉积的各种技术。在一种方法中，阴影环覆盖在衬底的边缘上以阻止气体流向斜面区域。阴影环边缘处的几何特征将气体流引导到晶片，以便在遮蔽边缘的同时保持晶片的厚度均匀性。在另一种方法中，衬底加热器/支撑件构造成将净化气体流动到被支撑的衬底的边缘。这些吹扫气体可防止工艺气体到达衬底边缘并将材料沉积在斜面区域上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式