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1. 发明授权

US07187701B2 Ridge waveguide semiconductor laser 有权
标题翻译：脊波导半导体激光器
公开(公告)号：US07187701B2
公开(公告)日：2007-03-06
申请号：US10799714
申请日：2004-03-15
申请人： Yutaka Mihashi , Tohru Takiguchi , Toshio Tanaka , Tomoko Kadowaki , Yoshihiko Hanamaki , Nobuyuki Tomita
发明人： Yutaka Mihashi , Tohru Takiguchi , Toshio Tanaka , Tomoko Kadowaki , Yoshihiko Hanamaki , Nobuyuki Tomita
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/0425 , H01S5/06226 , H01S5/16 , H01S5/2214 , H01S5/34366
摘要： A ridge waveguide semiconductor laser includes an active layer, semiconductor layers on the active layer and having a ridge-shaped waveguide, an insulating film on the semiconductor layer, a first electrode layer in contact with the semiconductor layer through an opening in the insulating film, and a second electrode layer on the first electrode layer having a stripe shape and extending along the waveguide. A distance from an end face of a resonator of the laser to an edge of the second electrode layer does not exceed 20 μm.
摘要翻译：脊波导半导体激光器包括有源层，有源层上的半导体层，具有脊形波导，半导体层上的绝缘膜，通过绝缘膜的开口与半导体层接触的第一电极层，以及在所述第一电极层上具有带状并且沿着所述波导延伸的第二电极层。从激光谐振器的端面到第二电极层的边缘的距离不超过20μm。

2. 发明授权

US06768760B2 Ridge-waveguide semiconductor laser device 失效
标题翻译：脊波导半导体激光器件
公开(公告)号：US06768760B2
公开(公告)日：2004-07-27
申请号：US10260280
申请日：2002-10-01
申请人： Yutaka Mihashi , Tohru Takiguchi , Yoshihiko Hanamaki
发明人： Yutaka Mihashi , Tohru Takiguchi , Yoshihiko Hanamaki
IPC分类号： H01S500
CPC分类号： H01S5/223 , H01S5/12 , H01S5/124 , H01S5/209 , H01S5/22 , H01S5/2231 , H01S5/3211
摘要： A laser device includes a double hetero-structure element constructed by depositing a p-type cladding layer, a quantum well active layer, an n-type thin first cladding layer and an n-type thick second cladding layer sequentially. A ridge-waveguide is shaped between two trenches formed in the second cladding layer. The first cladding layer serves as an etching stopper while etching the second cladding layer to form the two trenches. The trenches reach to or reach in vicinity to the surface of the first cladding layer. High-resistance regions may be formed in portions of the first cladding layer directly underneath the trenches. The thin first cladding layer, suppresses leakage current and improves the temperature characteristics and the operating speed characteristics of the laser device.
摘要翻译：激光器件包括通过依次沉积p型包覆层，量子阱有源层，n型薄第一覆层和n型厚第二覆层而构成的双异质结构元件。脊形波导形成在形成在第二覆层中的两个沟槽之间。第一覆层在蚀刻第二覆层以形成两个沟槽时用作蚀刻停止层。沟槽到达或到达第一包层的表面附近。高电阻区域可以形成在第一包层的直接在沟槽下方的部分中。薄的第一包层抑制漏电流，提高激光装置的温度特性和工作速度特性。

3. 发明申请

US20060018358A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20060018358A1
公开(公告)日：2006-01-26
申请号：US11144772
申请日：2005-06-06
申请人： Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
发明人： Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
IPC分类号： H01S3/097 , H01S5/00
CPC分类号： H01S5/0425 , H01S5/0021 , H01S5/2214 , H01S5/2231
摘要： A semiconductor laser device includes: an electrically insulating film, on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shave with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.
摘要翻译：半导体激光器件包括：激光芯片的顶面上的电绝缘膜; 和金属膜，在电绝缘膜上。电绝缘膜和/或金属膜在平面上具有五个或更多个顶点的多边形刮削，每个顶点具有小于180度的内角。由于操作期间的温度变化引起的应力减小，导致寿命更长，可靠性更高的半导体激光器件。

4. 发明授权

US07675954B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07675954B2
公开(公告)日：2010-03-09
申请号：US11144772
申请日：2005-06-06
申请人： Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
发明人： Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
IPC分类号： H01S5/00 , H01S5/02
CPC分类号： H01S5/0425 , H01S5/0021 , H01S5/2214 , H01S5/2231
摘要： A semiconductor laser device includes: an electrically insulating film on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shape with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.
摘要翻译：半导体激光装置包括：激光芯片的顶面上的电绝缘膜; 和金属膜，在电绝缘膜上。电绝缘膜和/或金属膜在平面上具有五个或更多个顶点的多边形，每个顶点具有小于180度的内角。由于操作期间的温度变化引起的应力减小，导致寿命更长，可靠性更高的半导体激光器件。

5. 发明授权

US5763287A Method of fabricating semiconductor optical device 失效
标题翻译：制造半导体光学器件的方法
公开(公告)号：US5763287A
公开(公告)日：1998-06-09
申请号：US593348
申请日：1996-01-29
申请人： Takushi Itagaki , Tohru Takiguchi , Yutaka Mihashi , Akira Takemoto
发明人： Takushi Itagaki , Tohru Takiguchi , Yutaka Mihashi , Akira Takemoto
IPC分类号： H01L33/30 , H01L33/44 , H01L33/58 , H01S3/00 , H01S5/00 , H01S5/026 , H01S5/20 , H01L21/20
CPC分类号： H01S5/026 , H01S3/005 , H01S5/005 , H01S5/2077 , Y10S148/095 , Y10S438/978
摘要： A method of making a semiconductor optical device, including an integrated laser diode and optical waveguide lens with a continuous resonator extending along a resonator length direction between a pair of resonator facets, includes forming a pair of dielectric films disposed on a surface of a substrate on which a semiconductor layer of the optical waveguide is to be grown, the dielectric films having a linear symmetry about a hypothetical line extending in the resonator length direction, having edges opposing each other and parallel to the hypothetical line, and widths perpendicular to the resonator length direction that gradually narrow toward one facet from a position in the resonator length direction of the films. A mask pattern that produces a precise layer thickness profile is easily designed.
摘要翻译：一种制造半导体光学器件的方法，包括集成激光二极管和具有在一对谐振器面之间沿谐振器长度方向延伸的连续谐振器的光波导透镜，包括：形成一对电介质膜，该电介质膜设置在衬底的表面上该光波导的半导体层将被生长，该电介质膜围绕在谐振器长度方向上延伸的假想线具有线性对称性，具有彼此相对并平行于假想线的边缘以及垂直于谐振器长度的宽度从薄膜的谐振器长度方向的位置向一个小面逐渐变窄的方向。产生精确的层厚度轮廓的掩模图案是容易设计的。

6. 发明授权

US5311046A Long wavelength transmitter opto-electronic integrated circuit 失效
标题翻译：长波长发射机光电集成电路
公开(公告)号：US5311046A
公开(公告)日：1994-05-10
申请号：US757803
申请日：1991-09-11
申请人： Yutaka Mihashi
发明人： Yutaka Mihashi
IPC分类号： H01L21/338 , H01L27/15 , H01L29/778 , H01L29/812 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/062 , H01L33/00
CPC分类号： H01S5/06203 , H01L27/15 , H01S5/0424 , H01S5/026
摘要： A long wavelength transmitter OEIC includes a transverse direction current injection type semiconductor laser and a high electron mobility transistor which are integrated on a semi-insulating substrate. The semiconductor laser includes at least an AlGaInAs lower cladding layer, a quantum well active layer and a high resistivity AlGaInAs upper cladding layer successively grown on the semi-insulating substrate, disordered regions formed in the quantum well active layer by diffusions of p type and n type dopants, and an active region sandwiched by the disordered regions. The transistor includes an operating layer and a carrier supplying layer both including AlGaInAs series material and formed on the high resistivity AlGaInAs upper cladding layer. This transistor uses the upper cladding layer as a leakage current preventing layer. This structure can be formed by only one epitaxial growth, resulting in low cost. In addition, since the above layers are successively grown on a flat substrate, photolithography processes for forming a gate of HEMT are performed on a flat surface, so that a fine gate pattern can be formed with high precision. As a result, a transmitter OEIC performing high speed modulation are produced.
摘要翻译：长波长发射器OEIC包括集成在半绝缘衬底上的横向电流注入型半导体激光器和高电子迁移率晶体管。半导体激光器至少包括在半绝缘基板上连续生长的AlGaInAs下包层，量子阱活性层和高电阻率AlGaInAs上包层，通过p型和n型扩散形成在量子阱活性层中的无序区域型掺杂剂和由无序区域夹持的有源区域。该晶体管包括工作层和载流子供应层，其两者都包括AlGaInAs系列材料并形成在高电阻率AlGaInAs上覆层上。该晶体管使用上覆层作为防漏电流层。这种结构只能通过一个外延生长形成，导致低成本。此外，由于上述层在平坦基板上连续生长，因此在平坦表面上进行用于形成HEMT的栅极的光刻处理，从而可以高精度地形成精细的栅极图案。结果，产生执行高速调制的发射机OEIC。

7. 发明授权

US4998258A Semiconductor laser device 失效
公开(公告)号：US4998258A
公开(公告)日：1991-03-05
申请号：US398955
申请日：1989-08-28
申请人： Kenji Ikeda , Kimio Shigihara , Yutaka Mihashi
发明人： Kenji Ikeda , Kimio Shigihara , Yutaka Mihashi
IPC分类号： H01S5/00 , H01S5/028 , H01S5/10
CPC分类号： H01S5/0286 , H01S5/1082 , H01S2301/166
摘要： A semiconductor laser device provided with a broad light waveguide through which a higher order transverse oscillation modes can propagate, includes at least one of laser facet having a high reflectance region having a width of about 1/5 to 1/2 of the width of the light waveguide located at a central portion thereof and a low reflectance region having a lower reflectance than the high reflectance region located at both sides of the high reflectance region whereby higher order modes of oscillation can be suppressed.

8. 发明授权

US4924474A Laser device with high oscillation efficiency 失效
标题翻译：激光器具有高振荡效率
公开(公告)号：US4924474A
公开(公告)日：1990-05-08
申请号：US308586
申请日：1989-02-10
申请人： Shigenori Yagi , Yasuhito Myoi , Masaki Kuzumoto , Kazuki Kuba , Yoshito Seiwa , Toshitaka Aoyagi , Yutaka Mihashi
发明人： Shigenori Yagi , Yasuhito Myoi , Masaki Kuzumoto , Kazuki Kuba , Yoshito Seiwa , Toshitaka Aoyagi , Yutaka Mihashi
IPC分类号： H01S3/042 , H01S3/0933 , H01S3/0941
CPC分类号： H01S3/0941 , H01S3/042 , H01S3/0933 , H01S3/025 , H01S3/094057 , H01S3/09408
摘要： A laser device comprises a laser medium, a semiconductor light-emitting element for exciting the laser medium, a reflecting surface surrounding the outer periphery of the laser medium along its optical axis, and an opening provided in a part of the reflecting surface for causing light from the semiconductor light-emitting element to be incident upon the laser medium. The laser device is improved further by providing a polarizing plate and a light guide between the light-emitting element and the laser medium and by deviating the optical axis of excitation light from the central axis of the laser medium.
摘要翻译：激光装置包括激光介质，用于激发激光介质的半导体发光元件，沿着其光轴围绕激光介质的外周的反射表面，以及设置在反射表面的一部分中以引起光的开口从半导体发光元件入射到激光介质上。通过在发光元件和激光介质之间设置偏振板和光导，并且通过使激发光的光轴偏离激光介质的中心轴来进一步改善激光器件。

9. 发明授权

US4829023A Method of producing a semiconductor laser 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US4829023A
公开(公告)日：1989-05-09
申请号：US126501
申请日：1987-11-30
申请人： Yutaka Nagai , Yutaka Mihashi , Tetsuya Yagi , Yoichiro Ota
发明人： Yutaka Nagai , Yutaka Mihashi , Tetsuya Yagi , Yoichiro Ota
IPC分类号： H01S5/00 , H01S5/223 , H01S5/323
CPC分类号： H01S5/32308 , H01S5/2232 , H01S5/2237 , Y10S148/017 , Y10S148/056 , Y10S148/095 , Y10S148/118
摘要： A method for producing a semiconductor laser including successively growing at least two semiconductor layers simultaneously on a substrate, the finally grown layer not containing aluminum and the layer grown immediately before the finally grown layer containing aluminum, etching a stripe groove through the finally grown layer to expose part of the semiconductor layer containing aluminum, growing a second semiconductor layer not including aluminum on the finally grown layer and the exposed surface of the semiconductor layer containing aluminum, and growing a semiconductor layer including aluminum on the second semiconductor layer not containing aluminum.
摘要翻译：一种半导体激光器的制造方法，包括在基板上同时连续生长至少两个半导体层，最终生长层不含铝和在含有铝的最终生长层之前生长的层，在最终生长层上蚀刻条纹槽露出包含铝的半导体层的一部分，在最终生长层上生长不包括铝的第二半导体层和含有铝的半导体层的暴露表面，并且在不含铝的第二半导体层上生长包括铝的半导体层。

10. 发明授权

US5838704A Pulsation laser having an active region with a thicker central region in a resonator length direction 失效
标题翻译：脉冲激光器具有在谐振器长度方向上具有较厚中心区域的有源区域
公开(公告)号：US5838704A
公开(公告)日：1998-11-17
申请号：US649447
申请日：1996-05-17
申请人： Yutaka Mihashi , Motoharu Miyashita , Shoichi Karakida
发明人： Yutaka Mihashi , Motoharu Miyashita , Shoichi Karakida
IPC分类号： H01S5/00 , H01S5/065 , H01S5/10 , H01S5/20 , H01S5/223 , H01S5/343 , H01S3/07
CPC分类号： B82Y20/00 , H01S5/10 , H01S5/106 , H01S5/2077 , H01S5/2231 , H01S5/34313 , H01S5/3432
摘要： A pulsation laser includes an n-type AlGaAs cladding layer on an n-type GaAs substrate, three quantum well active layers having central increased thickness regions and disposed on the cladding layer, and a p-type AlGaAs cladding layer disposed on the quantum well active layer. The increased thickness region of the active layer is not more than one-quarter of the length of the resonator of the laser.
摘要翻译：脉动激光器包括n型GaAs衬底上的n型AlGaAs覆层，具有中心增加厚度区域的三个量子阱有源层，并且设置在包覆层上，并且配置在量子阱活性物上的p型AlGaAs覆层层。有源层的增加的厚度区域不超过激光谐振器长度的四分之一。

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