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1. 发明申请

US20060018358A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20060018358A1
公开(公告)日：2006-01-26
申请号：US11144772
申请日：2005-06-06
申请人： Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
发明人： Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
IPC分类号： H01S3/097 , H01S5/00
CPC分类号： H01S5/0425 , H01S5/0021 , H01S5/2214 , H01S5/2231
摘要： A semiconductor laser device includes: an electrically insulating film, on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shave with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.
摘要翻译：半导体激光器件包括：激光芯片的顶面上的电绝缘膜; 和金属膜，在电绝缘膜上。电绝缘膜和/或金属膜在平面上具有五个或更多个顶点的多边形刮削，每个顶点具有小于180度的内角。由于操作期间的温度变化引起的应力减小，导致寿命更长，可靠性更高的半导体激光器件。

2. 发明授权

US5311046A Long wavelength transmitter opto-electronic integrated circuit 失效
标题翻译：长波长发射机光电集成电路
公开(公告)号：US5311046A
公开(公告)日：1994-05-10
申请号：US757803
申请日：1991-09-11
申请人： Yutaka Mihashi
发明人： Yutaka Mihashi
IPC分类号： H01L21/338 , H01L27/15 , H01L29/778 , H01L29/812 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/062 , H01L33/00
CPC分类号： H01S5/06203 , H01L27/15 , H01S5/0424 , H01S5/026
摘要： A long wavelength transmitter OEIC includes a transverse direction current injection type semiconductor laser and a high electron mobility transistor which are integrated on a semi-insulating substrate. The semiconductor laser includes at least an AlGaInAs lower cladding layer, a quantum well active layer and a high resistivity AlGaInAs upper cladding layer successively grown on the semi-insulating substrate, disordered regions formed in the quantum well active layer by diffusions of p type and n type dopants, and an active region sandwiched by the disordered regions. The transistor includes an operating layer and a carrier supplying layer both including AlGaInAs series material and formed on the high resistivity AlGaInAs upper cladding layer. This transistor uses the upper cladding layer as a leakage current preventing layer. This structure can be formed by only one epitaxial growth, resulting in low cost. In addition, since the above layers are successively grown on a flat substrate, photolithography processes for forming a gate of HEMT are performed on a flat surface, so that a fine gate pattern can be formed with high precision. As a result, a transmitter OEIC performing high speed modulation are produced.
摘要翻译：长波长发射器OEIC包括集成在半绝缘衬底上的横向电流注入型半导体激光器和高电子迁移率晶体管。半导体激光器至少包括在半绝缘基板上连续生长的AlGaInAs下包层，量子阱活性层和高电阻率AlGaInAs上包层，通过p型和n型扩散形成在量子阱活性层中的无序区域型掺杂剂和由无序区域夹持的有源区域。该晶体管包括工作层和载流子供应层，其两者都包括AlGaInAs系列材料并形成在高电阻率AlGaInAs上覆层上。该晶体管使用上覆层作为防漏电流层。这种结构只能通过一个外延生长形成，导致低成本。此外，由于上述层在平坦基板上连续生长，因此在平坦表面上进行用于形成HEMT的栅极的光刻处理，从而可以高精度地形成精细的栅极图案。结果，产生执行高速调制的发射机OEIC。

3. 发明授权

US4998258A Semiconductor laser device 失效
公开(公告)号：US4998258A
公开(公告)日：1991-03-05
申请号：US398955
申请日：1989-08-28
申请人： Kenji Ikeda , Kimio Shigihara , Yutaka Mihashi
发明人： Kenji Ikeda , Kimio Shigihara , Yutaka Mihashi
IPC分类号： H01S5/00 , H01S5/028 , H01S5/10
CPC分类号： H01S5/0286 , H01S5/1082 , H01S2301/166
摘要： A semiconductor laser device provided with a broad light waveguide through which a higher order transverse oscillation modes can propagate, includes at least one of laser facet having a high reflectance region having a width of about 1/5 to 1/2 of the width of the light waveguide located at a central portion thereof and a low reflectance region having a lower reflectance than the high reflectance region located at both sides of the high reflectance region whereby higher order modes of oscillation can be suppressed.

4. 发明授权

US4924474A Laser device with high oscillation efficiency 失效
标题翻译：激光器具有高振荡效率
公开(公告)号：US4924474A
公开(公告)日：1990-05-08
申请号：US308586
申请日：1989-02-10
申请人： Shigenori Yagi , Yasuhito Myoi , Masaki Kuzumoto , Kazuki Kuba , Yoshito Seiwa , Toshitaka Aoyagi , Yutaka Mihashi
发明人： Shigenori Yagi , Yasuhito Myoi , Masaki Kuzumoto , Kazuki Kuba , Yoshito Seiwa , Toshitaka Aoyagi , Yutaka Mihashi
IPC分类号： H01S3/042 , H01S3/0933 , H01S3/0941
CPC分类号： H01S3/0941 , H01S3/042 , H01S3/0933 , H01S3/025 , H01S3/094057 , H01S3/09408
摘要： A laser device comprises a laser medium, a semiconductor light-emitting element for exciting the laser medium, a reflecting surface surrounding the outer periphery of the laser medium along its optical axis, and an opening provided in a part of the reflecting surface for causing light from the semiconductor light-emitting element to be incident upon the laser medium. The laser device is improved further by providing a polarizing plate and a light guide between the light-emitting element and the laser medium and by deviating the optical axis of excitation light from the central axis of the laser medium.
摘要翻译：激光装置包括激光介质，用于激发激光介质的半导体发光元件，沿着其光轴围绕激光介质的外周的反射表面，以及设置在反射表面的一部分中以引起光的开口从半导体发光元件入射到激光介质上。通过在发光元件和激光介质之间设置偏振板和光导，并且通过使激发光的光轴偏离激光介质的中心轴来进一步改善激光器件。

5. 发明授权

US4829023A Method of producing a semiconductor laser 失效
标题翻译：半导体激光器的制造方法
公开(公告)号：US4829023A
公开(公告)日：1989-05-09
申请号：US126501
申请日：1987-11-30
申请人： Yutaka Nagai , Yutaka Mihashi , Tetsuya Yagi , Yoichiro Ota
发明人： Yutaka Nagai , Yutaka Mihashi , Tetsuya Yagi , Yoichiro Ota
IPC分类号： H01S5/00 , H01S5/223 , H01S5/323
CPC分类号： H01S5/32308 , H01S5/2232 , H01S5/2237 , Y10S148/017 , Y10S148/056 , Y10S148/095 , Y10S148/118
摘要： A method for producing a semiconductor laser including successively growing at least two semiconductor layers simultaneously on a substrate, the finally grown layer not containing aluminum and the layer grown immediately before the finally grown layer containing aluminum, etching a stripe groove through the finally grown layer to expose part of the semiconductor layer containing aluminum, growing a second semiconductor layer not including aluminum on the finally grown layer and the exposed surface of the semiconductor layer containing aluminum, and growing a semiconductor layer including aluminum on the second semiconductor layer not containing aluminum.
摘要翻译：一种半导体激光器的制造方法，包括在基板上同时连续生长至少两个半导体层，最终生长层不含铝和在含有铝的最终生长层之前生长的层，在最终生长层上蚀刻条纹槽露出包含铝的半导体层的一部分，在最终生长层上生长不包括铝的第二半导体层和含有铝的半导体层的暴露表面，并且在不含铝的第二半导体层上生长包括铝的半导体层。

6. 发明授权

US5838704A Pulsation laser having an active region with a thicker central region in a resonator length direction 失效
标题翻译：脉冲激光器具有在谐振器长度方向上具有较厚中心区域的有源区域
公开(公告)号：US5838704A
公开(公告)日：1998-11-17
申请号：US649447
申请日：1996-05-17
申请人： Yutaka Mihashi , Motoharu Miyashita , Shoichi Karakida
发明人： Yutaka Mihashi , Motoharu Miyashita , Shoichi Karakida
IPC分类号： H01S5/00 , H01S5/065 , H01S5/10 , H01S5/20 , H01S5/223 , H01S5/343 , H01S3/07
CPC分类号： B82Y20/00 , H01S5/10 , H01S5/106 , H01S5/2077 , H01S5/2231 , H01S5/34313 , H01S5/3432
摘要： A pulsation laser includes an n-type AlGaAs cladding layer on an n-type GaAs substrate, three quantum well active layers having central increased thickness regions and disposed on the cladding layer, and a p-type AlGaAs cladding layer disposed on the quantum well active layer. The increased thickness region of the active layer is not more than one-quarter of the length of the resonator of the laser.
摘要翻译：脉动激光器包括n型GaAs衬底上的n型AlGaAs覆层，具有中心增加厚度区域的三个量子阱有源层，并且设置在包覆层上，并且配置在量子阱活性物上的p型AlGaAs覆层层。有源层的增加的厚度区域不超过激光谐振器长度的四分之一。

7. 发明授权

US5675601A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5675601A
公开(公告)日：1997-10-07
申请号：US584235
申请日：1996-01-11
申请人： Shoichi Karakida , Motoharu Miyashita , Yutaka Mihashi
发明人： Shoichi Karakida , Motoharu Miyashita , Yutaka Mihashi
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/2004
摘要： A semiconductor laser device includes, on a first conductivity type GaAs substrate, successively, a first conductivity type GaAs buffer layer, a first conductivity type Al.sub.s Ga.sub.1-s As (0
摘要翻译：半导体激光器件在第一导电型GaAs衬底上依次包括第一导电型GaAs缓冲层，第一导电型AlsGa1-sAs（0

8. 发明授权

US5439723A Substrate for producing semiconductor wafer 失效
标题翻译：用于生产半导体晶片的基板
公开(公告)号：US5439723A
公开(公告)日：1995-08-08
申请号：US150879
申请日：1993-11-12
申请人： Motoharu Miyashita , Norio Hayafuji , Yutaka Mihashi
发明人： Motoharu Miyashita , Norio Hayafuji , Yutaka Mihashi
IPC分类号： H01L21/02 , B28D5/00 , C30B33/00 , H01L21/68 , B32B3/02
CPC分类号： B28D5/0005 , B28D5/0011 , C30B33/00 , Y10T428/219 , Y10T428/24273 , Y10T428/24298 , Y10T428/24306 , Y10T428/24314 , Y10T428/24479 , Y10T428/2457 , Y10T428/24777
摘要： A semiconductor wafer includes a notch or a hole used in preparing an orientation flat on the wafer. The notch in the wafer includes a side that is perpendicular to the surfaces of the wafer and aligned along a cleavage plane of the wafer for forming the orientation flat by cleaving. A hole in a wafer preferably includes an axis aligned along the cleaving plane. A sharp, non-rounded cleavage is formed by preparing the notch or hole after the completion of any etching processes or other steps that may round the edges of the flat. The sharp edges aid in achieving a precision alignment using the orientation flat.
摘要翻译：半导体晶片包括用于制备晶片上的定向平面的凹口或孔。晶片中的凹口包括垂直于晶片表面并沿着晶片的解理平面排列的一侧，用于通过切割形成取向平面。晶片中的孔优选地包括沿着切割平面对准的轴。通过在完成任何蚀刻工艺之后制备凹口或孔而形成尖锐的非圆形裂纹，或者可以在平面边缘周围的其它步骤。锋利的边缘有助于使用定向平板实现精确对准。

9. 发明授权

US5436195A Method of fabricating an integrated semiconductor light modulator and laser 失效
标题翻译：制造集成半导体光调制器和激光器的方法
公开(公告)号：US5436195A
公开(公告)日：1995-07-25
申请号：US292203
申请日：1994-08-18
申请人： Tadashi Kimura , Yutaka Mihashi , Katuhiko Goto , Takushi Itagaki
发明人： Tadashi Kimura , Yutaka Mihashi , Katuhiko Goto , Takushi Itagaki
IPC分类号： H01L27/15 , H01S5/00 , H01S5/026 , H01S5/10 , H01S5/20 , H01L21/20
CPC分类号： H01S5/0265 , H01S5/1028 , H01S5/1032 , H01S5/2077 , Y10S117/902
摘要： In a method of fabricating an integrated semiconductor light modulator and laser device, a semiconductor layer having first and second regions of different crystal compositions is produced on each chip region of a semiconductor wafer by a selective crystal growth using, as a mask, a dielectric film having a prescribed pattern. Thereafter, a semiconductor laser and a light modulator that modulates laser light emitted from the semiconductor layer are produced in a first semiconductor region and a second semiconductor region, respectively, of each chip region. In this method, the shape of the dielectric mask pattern and the shape of the opening of the mask pattern on each chip region is symmetrical with the dielectric mask pattern and opening of an adjacent chip region along the optical waveguide direction of the semiconductor laser. The semiconductor layer is grown on the wafer so that the first and second semiconductor regions of different crystal compositions on each chip region are in contact with semiconductor regions having the same crystal composition of an adjacent chip region. As the result, at opposite edges of the chip region in the optical waveguide direction, the crystal compositions of the first and second semiconductor regions are the same.
摘要翻译：在制造集成半导体光调制器和激光器件的方法中，通过选择性晶体生长，在半导体晶片的每个芯片区域上制造具有不同晶体组成的第一和第二区域的半导体层，使用作为掩模的电介质膜具有规定的图案。此后，分别在每个芯片区域的第一半导体区域和第二半导体区域中产生调制从半导体层发射的激光的半导体激光器和光调制器。在该方法中，电介质掩模图案的形状和每个芯片区域上的掩模图案的开口的形状与电介质掩模图案对准，并且沿着半导体激光器的光波导方向打开相邻的芯片区域。半导体层在晶片上生长，使得在每个芯片区域上具有不同晶体组成的第一和第二半导体区域与具有相邻芯片区域的相同晶体组成的半导体区域接触。结果，在光波导方向的芯片区域的相对边缘处，第一和第二半导体区域的晶体组成相同。

10. 发明授权

US5218614A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5218614A
公开(公告)日：1993-06-08
申请号：US858020
申请日：1992-03-26
申请人： Yutaka Mihashi
发明人： Yutaka Mihashi
IPC分类号： H01L29/74 , H01S5/00 , H01S5/042 , H01S5/22 , H01S5/227
CPC分类号： H01S5/227 , H01S5/0425 , H01S5/2205 , H01S5/2275
摘要： A semiconductor laser device has a thyristor current confinement structure at both sides of an active region. A p-n junction in the current confinement structure is forward biased during laser operation and is short-circuited by a metal layer or a low resistance material layer. Therefore, injection of holes from the p layer into the n layer of the short-circuited junction during laser operation is suppressed whereby the thyristor current confinement structure is not likely to be turned on. In addition, the current flowing through the blocking layer is decreased. As a result, current blocking is significantly improved, preventing a reduction in the laser output power and a reduction in the linearity of the light output versus current characteristic of the laser.

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