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1. 发明授权

US5838704A Pulsation laser having an active region with a thicker central region in a resonator length direction 失效
标题翻译：脉冲激光器具有在谐振器长度方向上具有较厚中心区域的有源区域
公开(公告)号：US5838704A
公开(公告)日：1998-11-17
申请号：US649447
申请日：1996-05-17
申请人： Yutaka Mihashi , Motoharu Miyashita , Shoichi Karakida
发明人： Yutaka Mihashi , Motoharu Miyashita , Shoichi Karakida
IPC分类号： H01S5/00 , H01S5/065 , H01S5/10 , H01S5/20 , H01S5/223 , H01S5/343 , H01S3/07
CPC分类号： B82Y20/00 , H01S5/10 , H01S5/106 , H01S5/2077 , H01S5/2231 , H01S5/34313 , H01S5/3432
摘要： A pulsation laser includes an n-type AlGaAs cladding layer on an n-type GaAs substrate, three quantum well active layers having central increased thickness regions and disposed on the cladding layer, and a p-type AlGaAs cladding layer disposed on the quantum well active layer. The increased thickness region of the active layer is not more than one-quarter of the length of the resonator of the laser.
摘要翻译：脉动激光器包括n型GaAs衬底上的n型AlGaAs覆层，具有中心增加厚度区域的三个量子阱有源层，并且设置在包覆层上，并且配置在量子阱活性物上的p型AlGaAs覆层层。有源层的增加的厚度区域不超过激光谐振器长度的四分之一。

2. 发明授权

US5675601A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5675601A
公开(公告)日：1997-10-07
申请号：US584235
申请日：1996-01-11
申请人： Shoichi Karakida , Motoharu Miyashita , Yutaka Mihashi
发明人： Shoichi Karakida , Motoharu Miyashita , Yutaka Mihashi
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/2004
摘要： A semiconductor laser device includes, on a first conductivity type GaAs substrate, successively, a first conductivity type GaAs buffer layer, a first conductivity type Al.sub.s Ga.sub.1-s As (0
摘要翻译：半导体激光器件在第一导电型GaAs衬底上依次包括第一导电型GaAs缓冲层，第一导电型AlsGa1-sAs（0

3. 发明授权

US5835516A Semiconductor laser device and method of fabricating semiconductor laser device 失效
标题翻译：半导体激光器件及半导体激光器件的制造方法
公开(公告)号：US5835516A
公开(公告)日：1998-11-10
申请号：US569881
申请日：1995-12-08
申请人： Motoharu Miyashita , Hirotaka Kizuki , Yasuaki Yoshida , Yutaka Mihashi , Yasutomo Kajikawa , Shoichi Karakida , Yuji Ohkura
发明人： Motoharu Miyashita , Hirotaka Kizuki , Yasuaki Yoshida , Yutaka Mihashi , Yasutomo Kajikawa , Shoichi Karakida , Yuji Ohkura
IPC分类号： H01L21/306 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19 , H01L21/20
CPC分类号： H01S5/2231 , H01S5/2081 , H01S5/209 , H01S5/2206 , H01S5/221 , H01S5/32316
摘要： A method of fabricating a semiconductor laser device includes successively forming an active layer and upper cladding layers on a lower cladding layer, etching and removing portions except regions of the upper cladding layers where a current is to flow to form a stripe-shaped ridge structure, and forming a buffer layer comprising Al.sub.x Ga.sub.1-x As having an Al composition ratio x of 0 to 0.3 on a surface of the upper cladding layers exposed by the etching and forming a current blocking layer of first conductivity type Al.sub.y Ga.sub.1-y As having an Al composition ratio y of at least 0.5 on the buffer layer to bury portions of the upper cladding layers which are not removed by the etching process. Therefore, since the layer grown on the upper cladding layer exposed by etching of AlGaAs or GaAs having a low Al composition ratio (0-0.3), three-dimensional growth of and crystalline defects in the buffer layer are suppressed. Current leakage is suppressed, so that a semiconductor laser device having a low threshold current and a high efficiency is fabricated with a stable yield.
摘要翻译：一种制造半导体激光器件的方法包括：在下包层上连续形成有源层和上覆层，蚀刻除去电流流过的上覆层的区域以外的部分，形成条状脊结构，以及在通过蚀刻暴露的上覆层的表面上形成包含Al组成比x为0至0.3的Al x Ga 1-x As的缓冲层，并形成具有Al组成比y的第一导电型AlyGa1-yAs的电流阻挡层在缓冲层上至少为0.5以掩埋未被蚀刻工艺除去的上覆层的部分。因此，由于通过蚀刻Al AlAs或Al组成比低（0-0.3）的GaAs而暴露在上包层上的层，抑制了缓冲层的三维生长和晶体缺陷。电流泄漏被抑制，从而以稳定的产量制造具有低阈值电流和高效率的半导体激光器件。

4. 发明授权

US5439723A Substrate for producing semiconductor wafer 失效
标题翻译：用于生产半导体晶片的基板
公开(公告)号：US5439723A
公开(公告)日：1995-08-08
申请号：US150879
申请日：1993-11-12
申请人： Motoharu Miyashita , Norio Hayafuji , Yutaka Mihashi
发明人： Motoharu Miyashita , Norio Hayafuji , Yutaka Mihashi
IPC分类号： H01L21/02 , B28D5/00 , C30B33/00 , H01L21/68 , B32B3/02
CPC分类号： B28D5/0005 , B28D5/0011 , C30B33/00 , Y10T428/219 , Y10T428/24273 , Y10T428/24298 , Y10T428/24306 , Y10T428/24314 , Y10T428/24479 , Y10T428/2457 , Y10T428/24777
摘要： A semiconductor wafer includes a notch or a hole used in preparing an orientation flat on the wafer. The notch in the wafer includes a side that is perpendicular to the surfaces of the wafer and aligned along a cleavage plane of the wafer for forming the orientation flat by cleaving. A hole in a wafer preferably includes an axis aligned along the cleaving plane. A sharp, non-rounded cleavage is formed by preparing the notch or hole after the completion of any etching processes or other steps that may round the edges of the flat. The sharp edges aid in achieving a precision alignment using the orientation flat.
摘要翻译：半导体晶片包括用于制备晶片上的定向平面的凹口或孔。晶片中的凹口包括垂直于晶片表面并沿着晶片的解理平面排列的一侧，用于通过切割形成取向平面。晶片中的孔优选地包括沿着切割平面对准的轴。通过在完成任何蚀刻工艺之后制备凹口或孔而形成尖锐的非圆形裂纹，或者可以在平面边缘周围的其它步骤。锋利的边缘有助于使用定向平板实现精确对准。

5. 发明授权

US5279077A Method for producing semiconductor wafer 失效
标题翻译：半导体晶片的制造方法
公开(公告)号：US5279077A
公开(公告)日：1994-01-18
申请号：US977154
申请日：1992-11-16
申请人： Motoharu Miyashita , Norio Hayafuji , Yutaka Mihashi
发明人： Motoharu Miyashita , Norio Hayafuji , Yutaka Mihashi
IPC分类号： H01L21/02 , B28D5/00 , C30B33/00 , H01L21/68 , B24B49/00
CPC分类号： B28D5/0005 , B28D5/0011 , C30B33/00 , Y10T428/219 , Y10T428/24273 , Y10T428/24298 , Y10T428/24306 , Y10T428/24314 , Y10T428/24479 , Y10T428/2457 , Y10T428/24777
摘要： In a method for forming a semiconductor wafer with an orientation flat along a cleavage plane, a groove or hole is formed in the substrate on a line along which the substrate is cleaved to form an orientation flat and the substrate is treated to produce a mirrorlike surface. Then, the substrate having the mirrorlike surface is cleaved from the groove or hole to form the orientation flat. Accordingly, edges of the cleavage plane are not rounded due to the surface treatment. In addition, the substrate is easily cleaved along the cleavage plane from the groove or the hole. As a result, a semiconductor wafer having a sharp cleavage plane as an orientation flat is produced with improved yield, and alignment is performed with high precision in a subsequent process, such as photolithography.
摘要翻译：在沿着解理面形成具有取向平坦的半导体晶片的方法中，在基板上的基板上形成凹槽或孔，沿着基板被切割以形成取向平面，并且将基板处理以产生反射镜表面。然后，具有镜面表面的基板从凹槽或孔中分离以形成取向平面。因此，由于表面处理，解理面的边缘不会变圆。此外，衬底沿着解理平面容易地从凹槽或孔中裂开。结果，以提高的产量制造具有作为取向平面的尖锐解理面的半导体晶片，并且在随后的工艺（例如光刻）中以高精度进行对准。

6. 发明授权

US06275515B1 Semiconductor laser device and method of producing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06275515B1
公开(公告)日：2001-08-14
申请号：US09238170
申请日：1999-01-28
申请人： Yutaka Nagai , Yutaka Mihashi , Motoharu Miyashita , Yasutomo Kajikawa
发明人： Yutaka Nagai , Yutaka Mihashi , Motoharu Miyashita , Yasutomo Kajikawa
IPC分类号： H01S500
CPC分类号： H01L33/30 , H01S5/2231 , H01S5/3235 , H01S5/32358 , H01S5/32383
摘要： A semiconductor laser device on a GaAs substrate and having an oscillation wavelength of 1.3 &mgr;m or 1.55 &mgr;m and a method of producing the laser device. The laser device has a BTlGaAs active layer that lattice matches with the GaAs substrate. To grow the BTlGaAs active layer, organometallic vapor phase deposition is employed with cyclopentadienyl thallium as the source of Tl.
摘要翻译： GaAs衬底上的半导体激光器件，其振荡波长为1.3μm或1.55μm，以及制造该激光器件的方法。激光器件具有与GaAs衬底晶格匹配的BT1GaAs有源层。为了生长BTlGaAs活性层，使用有机金属气相沉积作为Tl的来源的环戊二烯基铊。

7. 发明申请

US20060018358A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20060018358A1
公开(公告)日：2006-01-26
申请号：US11144772
申请日：2005-06-06
申请人： Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
发明人： Tomoko Kadowaki , Tohru Takiguchi , Toshio Tanaka , Yutaka Mihashi
IPC分类号： H01S3/097 , H01S5/00
CPC分类号： H01S5/0425 , H01S5/0021 , H01S5/2214 , H01S5/2231
摘要： A semiconductor laser device includes: an electrically insulating film, on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shave with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.
摘要翻译：半导体激光器件包括：激光芯片的顶面上的电绝缘膜; 和金属膜，在电绝缘膜上。电绝缘膜和/或金属膜在平面上具有五个或更多个顶点的多边形刮削，每个顶点具有小于180度的内角。由于操作期间的温度变化引起的应力减小，导致寿命更长，可靠性更高的半导体激光器件。

8. 发明授权

US5311046A Long wavelength transmitter opto-electronic integrated circuit 失效
标题翻译：长波长发射机光电集成电路
公开(公告)号：US5311046A
公开(公告)日：1994-05-10
申请号：US757803
申请日：1991-09-11
申请人： Yutaka Mihashi
发明人： Yutaka Mihashi
IPC分类号： H01L21/338 , H01L27/15 , H01L29/778 , H01L29/812 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/062 , H01L33/00
CPC分类号： H01S5/06203 , H01L27/15 , H01S5/0424 , H01S5/026
摘要： A long wavelength transmitter OEIC includes a transverse direction current injection type semiconductor laser and a high electron mobility transistor which are integrated on a semi-insulating substrate. The semiconductor laser includes at least an AlGaInAs lower cladding layer, a quantum well active layer and a high resistivity AlGaInAs upper cladding layer successively grown on the semi-insulating substrate, disordered regions formed in the quantum well active layer by diffusions of p type and n type dopants, and an active region sandwiched by the disordered regions. The transistor includes an operating layer and a carrier supplying layer both including AlGaInAs series material and formed on the high resistivity AlGaInAs upper cladding layer. This transistor uses the upper cladding layer as a leakage current preventing layer. This structure can be formed by only one epitaxial growth, resulting in low cost. In addition, since the above layers are successively grown on a flat substrate, photolithography processes for forming a gate of HEMT are performed on a flat surface, so that a fine gate pattern can be formed with high precision. As a result, a transmitter OEIC performing high speed modulation are produced.
摘要翻译：长波长发射器OEIC包括集成在半绝缘衬底上的横向电流注入型半导体激光器和高电子迁移率晶体管。半导体激光器至少包括在半绝缘基板上连续生长的AlGaInAs下包层，量子阱活性层和高电阻率AlGaInAs上包层，通过p型和n型扩散形成在量子阱活性层中的无序区域型掺杂剂和由无序区域夹持的有源区域。该晶体管包括工作层和载流子供应层，其两者都包括AlGaInAs系列材料并形成在高电阻率AlGaInAs上覆层上。该晶体管使用上覆层作为防漏电流层。这种结构只能通过一个外延生长形成，导致低成本。此外，由于上述层在平坦基板上连续生长，因此在平坦表面上进行用于形成HEMT的栅极的光刻处理，从而可以高精度地形成精细的栅极图案。结果，产生执行高速调制的发射机OEIC。

9. 发明授权

US4998258A Semiconductor laser device 失效
公开(公告)号：US4998258A
公开(公告)日：1991-03-05
申请号：US398955
申请日：1989-08-28
申请人： Kenji Ikeda , Kimio Shigihara , Yutaka Mihashi
发明人： Kenji Ikeda , Kimio Shigihara , Yutaka Mihashi
IPC分类号： H01S5/00 , H01S5/028 , H01S5/10
CPC分类号： H01S5/0286 , H01S5/1082 , H01S2301/166
摘要： A semiconductor laser device provided with a broad light waveguide through which a higher order transverse oscillation modes can propagate, includes at least one of laser facet having a high reflectance region having a width of about 1/5 to 1/2 of the width of the light waveguide located at a central portion thereof and a low reflectance region having a lower reflectance than the high reflectance region located at both sides of the high reflectance region whereby higher order modes of oscillation can be suppressed.

10. 发明授权

US4924474A Laser device with high oscillation efficiency 失效
标题翻译：激光器具有高振荡效率
公开(公告)号：US4924474A
公开(公告)日：1990-05-08
申请号：US308586
申请日：1989-02-10
申请人： Shigenori Yagi , Yasuhito Myoi , Masaki Kuzumoto , Kazuki Kuba , Yoshito Seiwa , Toshitaka Aoyagi , Yutaka Mihashi
发明人： Shigenori Yagi , Yasuhito Myoi , Masaki Kuzumoto , Kazuki Kuba , Yoshito Seiwa , Toshitaka Aoyagi , Yutaka Mihashi
IPC分类号： H01S3/042 , H01S3/0933 , H01S3/0941
CPC分类号： H01S3/0941 , H01S3/042 , H01S3/0933 , H01S3/025 , H01S3/094057 , H01S3/09408
摘要： A laser device comprises a laser medium, a semiconductor light-emitting element for exciting the laser medium, a reflecting surface surrounding the outer periphery of the laser medium along its optical axis, and an opening provided in a part of the reflecting surface for causing light from the semiconductor light-emitting element to be incident upon the laser medium. The laser device is improved further by providing a polarizing plate and a light guide between the light-emitting element and the laser medium and by deviating the optical axis of excitation light from the central axis of the laser medium.
摘要翻译：激光装置包括激光介质，用于激发激光介质的半导体发光元件，沿着其光轴围绕激光介质的外周的反射表面，以及设置在反射表面的一部分中以引起光的开口从半导体发光元件入射到激光介质上。通过在发光元件和激光介质之间设置偏振板和光导，并且通过使激发光的光轴偏离激光介质的中心轴来进一步改善激光器件。

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