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1. 发明授权

US5436195A Method of fabricating an integrated semiconductor light modulator and laser 失效
标题翻译：制造集成半导体光调制器和激光器的方法
公开(公告)号：US5436195A
公开(公告)日：1995-07-25
申请号：US292203
申请日：1994-08-18
申请人： Tadashi Kimura , Yutaka Mihashi , Katuhiko Goto , Takushi Itagaki
发明人： Tadashi Kimura , Yutaka Mihashi , Katuhiko Goto , Takushi Itagaki
IPC分类号： H01L27/15 , H01S5/00 , H01S5/026 , H01S5/10 , H01S5/20 , H01L21/20
CPC分类号： H01S5/0265 , H01S5/1028 , H01S5/1032 , H01S5/2077 , Y10S117/902
摘要： In a method of fabricating an integrated semiconductor light modulator and laser device, a semiconductor layer having first and second regions of different crystal compositions is produced on each chip region of a semiconductor wafer by a selective crystal growth using, as a mask, a dielectric film having a prescribed pattern. Thereafter, a semiconductor laser and a light modulator that modulates laser light emitted from the semiconductor layer are produced in a first semiconductor region and a second semiconductor region, respectively, of each chip region. In this method, the shape of the dielectric mask pattern and the shape of the opening of the mask pattern on each chip region is symmetrical with the dielectric mask pattern and opening of an adjacent chip region along the optical waveguide direction of the semiconductor laser. The semiconductor layer is grown on the wafer so that the first and second semiconductor regions of different crystal compositions on each chip region are in contact with semiconductor regions having the same crystal composition of an adjacent chip region. As the result, at opposite edges of the chip region in the optical waveguide direction, the crystal compositions of the first and second semiconductor regions are the same.
摘要翻译：在制造集成半导体光调制器和激光器件的方法中，通过选择性晶体生长，在半导体晶片的每个芯片区域上制造具有不同晶体组成的第一和第二区域的半导体层，使用作为掩模的电介质膜具有规定的图案。此后，分别在每个芯片区域的第一半导体区域和第二半导体区域中产生调制从半导体层发射的激光的半导体激光器和光调制器。在该方法中，电介质掩模图案的形状和每个芯片区域上的掩模图案的开口的形状与电介质掩模图案对准，并且沿着半导体激光器的光波导方向打开相邻的芯片区域。半导体层在晶片上生长，使得在每个芯片区域上具有不同晶体组成的第一和第二半导体区域与具有相邻芯片区域的相同晶体组成的半导体区域接触。结果，在光波导方向的芯片区域的相对边缘处，第一和第二半导体区域的晶体组成相同。

2. 发明申请

US20070298610A1 Method for producing electro-optical apparatus 审中-公开
标题翻译：电光装置的制造方法
公开(公告)号：US20070298610A1
公开(公告)日：2007-12-27
申请号：US11820325
申请日：2007-06-19
申请人： Takushi Itagaki , Naoto Nishimura
发明人： Takushi Itagaki , Naoto Nishimura
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/2855 , H01L27/124 , H01L29/78633
摘要： A method for producing an electro-optical apparatus includes forming a WSi film by sputtering including bombarding a target with plasma ions of an atmosphere injected into a vacuum chamber under reduced pressure to eject particles from the target and depositing the particles on a substrate to be used to form the electro-optical apparatus. The WSi film is formed in such a manner that the average deposition rate of the WSi film deposited on the substrate is equal to or higher than an average deposition rate at the limit of discharge maintenance in sputtering and 35 Å/s or less.
摘要翻译：电光装置的制造方法包括通过溅射形成WSi膜，包括用减压下注入真空室的气氛的等离子体离子轰击靶，从靶射出粒子，并将粒子沉积在待使用的基板上以形成电光装置。 WSi膜以这样的方式形成，即沉积在基板上的WSi膜的平均沉积速率等于或高于溅射中的放电维持极限的平均沉积速率和35埃/秒以下。

3. 发明授权

US5912475A Optical semiconductor device with InP 失效
标题翻译：带InP的光学半导体器件
公开(公告)号：US5912475A
公开(公告)日：1999-06-15
申请号：US767924
申请日：1996-12-17
申请人： Takushi Itagaki , Daisuke Suzuki , Tatsuya Kimura
发明人： Takushi Itagaki , Daisuke Suzuki , Tatsuya Kimura
IPC分类号： G02F1/025 , H01S5/00 , H01S5/0625 , H01L33/00
CPC分类号： H01S5/06258
摘要： An optical semiconductor device includes an n-type InP substrate having top and bottom surfaces; a stripe-shaped mesa structure including an n-type cladding layer, a multi quantum well layer, and a p-type first upper cladding layer disposed on the top surface of the substrate; a first layer of a semi-insulating material, an n-type InP hole blocking layer having a carrier concentration equal to or less than 4.times.10.sup.18 cm.sup.-3 and more than 1.times.10.sup.18 cm.sup.-3, and a second layer of the semi-insulating material disposed burying the mesa structure; a second p-type cladding layer and a p-type contact layer disposed on the mesa structure and on the second layer of the semi-insulating material, and p side electrodes spaced from each other in a stripe direction of the mesa structure, disposed on the p-type contact layer; and an n side electrode disposed on the bottom surface of the substrate. Therefore, an optical semiconductor device is available which has superior element isolation characteristics and broad modulation bandwidth, and enables the individual elements to operate with the utmost performance.
摘要翻译：光学半导体器件包括具有顶表面和底表面的n型InP衬底; 包括n型包覆层，多量子阱层和设置在衬底的顶表面上的p型第一上包层的条状台面结构; 半绝缘材料的第一层，载流子浓度等于或小于4×10 18 cm -3且大于1×10 18 cm -3的n型InP空穴阻挡层和设置在所述半绝缘材料上的第二层埋葬台面结构; 设置在半绝缘材料的台面结构和第二层上的第二p型覆层和p型接触层，以及在台面结构的条带方向上彼此隔开的p侧电极，设置在 p型接触层; 以及设置在基板的底面上的n侧电极。因此，可获得具有优异的元件隔离特性和宽调制带宽的光学半导体器件，并且能够使各个元件以最大的性能进行操作。

4. 发明授权

US5498289A Apparatus for applying narrow metal electrode 失效
标题翻译：用于施加窄金属电极的装置
公开(公告)号：US5498289A
公开(公告)日：1996-03-12
申请号：US216018
申请日：1994-03-21
申请人： Takushi Itagaki
发明人： Takushi Itagaki
IPC分类号： H01B13/00 , H01L21/288 , H01L31/0224 , H01L31/04 , H05K3/10 , H05K3/12 , B05C5/02
CPC分类号： H05K3/1241 , H01L21/288 , H01L31/022425 , Y02E10/50
摘要： An apparatus for producing a linear pattern having a width less than 100 microns and a resistivity of the order of 10.sup.-6 .OMEGA..multidot.cm on a substrate includes a tank for maintaining a low melting point metal in a fused state and having a narrow passage for flow of the fused metal, a drawing head having a fine groove connected to the narrow passage of the tank, and a tip close to or in contact with a substrate, the fused metal flowing to the tip of the drawing head through the groove by capillary action for application to the surface of the substrate.
摘要翻译：一种用于制造宽度小于100微米，电阻率为10-6欧米伽×厘米的电阻率的线性图案的设备包括用于保持熔融状态的低熔点金属并具有窄通道的槽的熔融金属，具有与槽的窄通道连接的细槽的拉丝头和与基板接近或接触的尖端，熔融金属通过毛细管作用通过凹槽流到拉伸头的尖端用于施加到基底的表面。

5. 发明授权

US5728215A Method for forming a film by selective area MOCVD growth 失效
标题翻译：通过选择性区域MOCVD生长形成膜的方法
公开(公告)号：US5728215A
公开(公告)日：1998-03-17
申请号：US555707
申请日：1995-11-14
申请人： Takushi Itagaki , Masayoshi Takemi , Norio Hayafuji
发明人： Takushi Itagaki , Masayoshi Takemi , Norio Hayafuji
IPC分类号： H01L21/205 , C23C16/04 , H01S5/00 , C30B25/04
CPC分类号： C23C16/042
摘要： A method for forming a film by selective area growth by MDCVD technique includes forming a mask on a semiconductor substrate having a (100) plane, the mask having a mask opening to selectively growing a compound semiconductor layer, and a slit which is narrower than the mask opening in width and controls the growth rate of the compound semiconductor layer at the mask opening; and selectively growing the compound semiconductor layer at a growth rate which is on the mask in the mask opening and the slit.
摘要翻译：通过MDCVD技术通过选择性区域生长形成膜的方法包括在具有（100）面的半导体衬底上形成掩模，掩模具有掩模开口以选择性地生长化合物半导体层，以及狭缝比掩模开口宽度并控制化合物半导体层在掩模开口处的生长速率; 并且以掩模开口和狭缝中的掩模上的生长速率选择性地生长化合物半导体层。

6. 发明授权

US5602863A Surface-emitting laser diode array and driving method thereof, photodetector, photodetector array, optical interconnection system, and multiwavelength optical communication system 失效
标题翻译：表面发射激光二极管阵列及其驱动方法，光电检测器，光电检测器阵列，光互连系统和多波长光通信系统
公开(公告)号：US5602863A
公开(公告)日：1997-02-11
申请号：US276655
申请日：1994-07-19
申请人： Takushi Itagaki
发明人： Takushi Itagaki
IPC分类号： G02B6/34 , G02B6/42 , H01L27/15 , H01L31/0232 , H01L31/0236 , H01L31/10 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/18 , H01S5/187 , H01S5/40 , H01S5/42 , H01S3/19
CPC分类号： H01S5/42 , G02B6/4249 , H01L27/15 , H01L31/0236 , H01S5/0264 , H01S5/18 , H01S5/187 , H01S5/4012 , H01S5/4037 , H01S5/4075 , H01S5/4087 , Y02E10/50
摘要： A surface-emitting LD array includes a plurality of surface-emitting LDs respectively including secondary diffraction gratings produced at the same pitch. These LDs are radially arranged on the substrate with a prescribed point on the substrate as the center of the radial arrangement so that the secondary diffraction gratings face to the center point. In this structure, the laser oscillation regions of the adjacent surface-emitting LDs are spaced apart from each other, so that the respective surface-emitting LDs are operated individually with high stability. As the result, when these surface-emitting LDs are oscillated with the same driving current, a high power laser light comprising a plurality of laser lights that are emitted from the respective LDs and have the same phase and the same wavelength is output stably in a prescribed direction. On the other hand, when these surface-emitting LDs are oscillated with different driving currents, a phase composite wave in which a plurality of laser lights having the same phase and different wavelengths are compounded is output stably in a prescribed direction.
摘要翻译：表面发射LD阵列包括分别包括以相同间距产生的次级衍射光栅的多个表面发射LD。这些LD以衬底上的规定点径向布置在衬底上，作为径向布置的中心，使得次级衍射光栅面向中心点。在该结构中，相邻的表面发射LD的激光振荡区域彼此间隔开，使得各个表面发射的LD以高稳定性单独操作。结果，当这些表面发射LD以相同的驱动电流振荡时，包括从各个LD发射并且具有相同相位和相同波长的多个激光的高功率激光在规定方向。另一方面，当这些表面发射LD以不同的驱动电流振荡时，将具有相同相位和不同波长的多个激光复合的相位复合波在规定方向上稳定地输出。

7. 发明授权

US5084107A Solar cell and solar cell array with adhered electrode 失效
标题翻译：太阳能电池和太阳能电池阵列与电极
公开(公告)号：US5084107A
公开(公告)日：1992-01-28
申请号：US482712
申请日：1990-02-21
申请人： Mikio Deguchi , Takushi Itagaki , Masaaki Usui
发明人： Mikio Deguchi , Takushi Itagaki , Masaaki Usui
IPC分类号： H01L31/04 , H01L31/0224 , H05K3/32
CPC分类号： H01R4/04 , H01L31/022425 , H01L2924/0002 , H05K3/321 , Y02E10/50
摘要： An electrode structure of a solar cell includes a metal wire fixed to the light incident surface of the solar cell with an electrically conductive adhesive. An electrode production method of a solar cell includes applying an electrically conductive adhesive to at least one of a portion of a metal wire and a portion of the light incident surface of the solar cell, pressing the metal wire into a predetermined position of the light incident surface of the solar cell, and solidifying the conductive adhesive to fix the metal wire.
摘要翻译：太阳能电池的电极结构包括用导电粘合剂固定到太阳能电池的光入射表面的金属线。太阳能电池的电极制造方法包括：向金属线的一部分和太阳能电池的光入射面的一部分中的至少一方施加导电性粘合剂，将金属线压入光入射的预定位置并固化导电粘合剂以固定金属丝。

8. 发明授权

US5763287A Method of fabricating semiconductor optical device 失效
标题翻译：制造半导体光学器件的方法
公开(公告)号：US5763287A
公开(公告)日：1998-06-09
申请号：US593348
申请日：1996-01-29
申请人： Takushi Itagaki , Tohru Takiguchi , Yutaka Mihashi , Akira Takemoto
发明人： Takushi Itagaki , Tohru Takiguchi , Yutaka Mihashi , Akira Takemoto
IPC分类号： H01L33/30 , H01L33/44 , H01L33/58 , H01S3/00 , H01S5/00 , H01S5/026 , H01S5/20 , H01L21/20
CPC分类号： H01S5/026 , H01S3/005 , H01S5/005 , H01S5/2077 , Y10S148/095 , Y10S438/978
摘要： A method of making a semiconductor optical device, including an integrated laser diode and optical waveguide lens with a continuous resonator extending along a resonator length direction between a pair of resonator facets, includes forming a pair of dielectric films disposed on a surface of a substrate on which a semiconductor layer of the optical waveguide is to be grown, the dielectric films having a linear symmetry about a hypothetical line extending in the resonator length direction, having edges opposing each other and parallel to the hypothetical line, and widths perpendicular to the resonator length direction that gradually narrow toward one facet from a position in the resonator length direction of the films. A mask pattern that produces a precise layer thickness profile is easily designed.
摘要翻译：一种制造半导体光学器件的方法，包括集成激光二极管和具有在一对谐振器面之间沿谐振器长度方向延伸的连续谐振器的光波导透镜，包括：形成一对电介质膜，该电介质膜设置在衬底的表面上该光波导的半导体层将被生长，该电介质膜围绕在谐振器长度方向上延伸的假想线具有线性对称性，具有彼此相对并平行于假想线的边缘以及垂直于谐振器长度的宽度从薄膜的谐振器长度方向的位置向一个小面逐渐变窄的方向。产生精确的层厚度轮廓的掩模图案是容易设计的。

9. 发明授权

US5389573A Method of making narrow metal electrode 失效
标题翻译：制作窄金属电极的方法
公开(公告)号：US5389573A
公开(公告)日：1995-02-14
申请号：US215478
申请日：1994-03-21
申请人： Takushi Itagaki
发明人： Takushi Itagaki
IPC分类号： H01B13/00 , H01L21/288 , H01L31/0224 , H01L31/04 , H05K3/10 , H05K3/12 , H01L31/18
CPC分类号： H05K3/1241 , H01L21/288 , H01L31/022425 , Y02E10/50
摘要： A method for producing a linear pattern having a width less than 100 microns and a resistivity of the order of 10.sup.-6 .OMEGA..multidot.cm on a substrate includes maintaining a low melting point metal in a fused state, applying the fused metal to a tip of a drawing head disposed close to or in contact with a substrate by capillary action, applying the fused metal to the substrate in a line with a width less than 100 microns while moving the tip of the drawing head relative to the substrate, and cooling and solidifying the fused metal as a linear pattern on the substrate.
摘要翻译：用于制造宽度小于100微米，电阻率为10-6欧米加xcm的电阻率的线性图案的方法包括保持熔融状态下的低熔点金属，将熔融金属施加到牵引头通过毛细管作用与基板接近或接触，将熔融金属以宽度小于100微米的直线施加到基板上，同时相对于基板移动牵引头的尖端，并且冷却和固化熔融金属作为衬底上的线性图案。

10. 发明授权

US5328520A Solar cell with low resistance linear electrode 失效
标题翻译：具有低电阻线性电极的太阳能电池
公开(公告)号：US5328520A
公开(公告)日：1994-07-12
申请号：US948441
申请日：1992-09-22
申请人： Takushi Itagaki
发明人： Takushi Itagaki
IPC分类号： H01B13/00 , H01L21/288 , H01L31/0224 , H01L31/04 , H05K3/10 , H05K3/12 , H01L31/06
CPC分类号： H05K3/1241 , H01L21/288 , H01L31/022425 , Y02E10/50
摘要： A method for producing a linear pattern having a width less than 100 microns and a resistivity of the order of 10.sup.-6 .OMEGA..multidot.cm on a substrate includes maintaining a low melting point metal in its fused state, applying the fused metal to a tip of a drawing head disposed close to or contacting a substrate by capillary action, applying the fused metal to the substrate in a line with a width less than 100 microns while moving the tip of the drawing head relative to the substrate, and cooling and solidifying the linear pattern of fused metal. Therefore, a linear pattern having a width less than 100 microns and a resistivity of the order of 10.sup.-6 .OMEGA..multidot.cm is directly formed on the substrate in a simple process with high efficiency and the production yield is significantly improved.
摘要翻译：在基板上制造宽度小于100微米，电阻率为10-6欧米伽×厘米的线性图形的方法包括将熔融金属保持在其熔融状态，将熔融金属施加到牵引头通过毛细管作用靠近或接触基板，同时使所述熔融金属以宽度小于100微米的直线施加到所述基板上，同时相对于所述基板移动所述拉伸头的尖端，并且冷却和固化所述线性图案的熔融金属。因此，以简单的方法，以高效率直接在基板上形成宽度小于100微米，电阻率为10-6欧米亚×厘米的线性图案，并且显着提高了产量。

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