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1. 发明申请

US20140017604A1 LITHOGRAPHY PROCESS 有权
标题翻译： LITHOGRAPHY过程
公开(公告)号：US20140017604A1
公开(公告)日：2014-01-16
申请号：US13550036
申请日：2012-07-16
申请人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Chin-Hsiang Lin
发明人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Chin-Hsiang Lin
IPC分类号： G03F7/20
CPC分类号： G03F7/70633
摘要： A process for use in lithography, such as photolithography for patterning a semiconductor wafer, is disclosed. The process includes receiving an incoming semiconductor wafer having various features and layers formed thereon. A unit-induced overlay (uniiOVL) correction is received and a deformation measurement is performed on the incoming semiconductor wafer in an overlay module. A deformation-induced overlay (defiOVL) correction is generated from the deformation measurement results by employing a predetermined algorithm on the deformation measurement results. The defiOVL and uniiOVL corrections are fed-forward to an exposure module and an exposure process is performed on the incoming semiconductor wafer.
摘要翻译：公开了一种用于光刻的方法，例如用于图案化半导体晶片的光刻技术。该方法包括接收具有形成在其上的各种特征和层的输入半导体晶片。接收单元引起的覆盖（uniOVL）校正，并且在覆盖模块中对输入的半导体晶片进行变形测量。通过对变形测量结果采用预定的算法，从变形测量结果生成变形诱导的覆盖（defiOVL）校正。 defiVV和unioVL校正被反馈到曝光模块，并且对输入的半导体晶片进行曝光处理。

2. 发明授权

US08703368B2 Lithography process 有权
标题翻译：平版印刷工艺
公开(公告)号：US08703368B2
公开(公告)日：2014-04-22
申请号：US13550036
申请日：2012-07-16
申请人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Chin-Hsiang Lin
发明人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Chin-Hsiang Lin
IPC分类号： G03F9/00
CPC分类号： G03F7/70633
摘要： A process for use in lithography, such as photolithography for patterning a semiconductor wafer, is disclosed. The process includes receiving an incoming semiconductor wafer having various features and layers formed thereon. A unit-induced overlay (uniiOVL) correction is received and a deformation measurement is performed on the incoming semiconductor wafer in an overlay module. A deformation-induced overlay (defiOVL) correction is generated from the deformation measurement results by employing a predetermined algorithm on the deformation measurement results. The defiOVL and uniiOVL corrections are fed-forward to an exposure module and an exposure process is performed on the incoming semiconductor wafer.
摘要翻译：公开了一种用于光刻的方法，例如用于图案化半导体晶片的光刻技术。该方法包括接收具有形成在其上的各种特征和层的输入半导体晶片。接收单元引起的覆盖（uniOVL）校正，并且在覆盖模块中对输入的半导体晶片进行变形测量。通过对变形测量结果采用预定的算法，从变形测量结果生成变形诱导的覆盖（defiOVL）校正。 defiVV和unioVL校正被反馈到曝光模块，并且对输入的半导体晶片进行曝光处理。

3. 发明申请

US20130286395A1 Tool Induced Shift Reduction Determination for Overlay Metrology 有权
标题翻译：刀具诱导换位测量用于覆盖计量学
公开(公告)号：US20130286395A1
公开(公告)日：2013-10-31
申请号：US13457832
申请日：2012-04-27
申请人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Heng-Jen Lee
发明人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Heng-Jen Lee
IPC分类号： G01B11/00
CPC分类号： G01B11/00 , G03F7/70633
摘要： One embodiment relates to a method for semiconductor workpiece processing. In this method, a baseline tool induced shift (TIS) is measured by performing a baseline number of TIS measurements on a first semiconductor workpiece. After the baseline TIS has been determined, the method determines a subsequent TIS based on a subsequent number of TIS measurements taken on a first subsequent semiconductor workpiece. The subsequent number of TIS measurements is less than the baseline number of TIS measurements.
摘要翻译：一个实施例涉及一种用于半导体工件加工的方法。在该方法中，通过在第一半导体工件上执行TIS测量的基线数量来测量基线工具诱发位移（TIS）。在确定基线TIS之后，该方法基于在第一后续半导体工件上进行的随后的TIS测量数确定随后的TIS。随后的TIS测量数量小于TIS测量的基线数量。

4. 发明授权

US08860941B2 Tool induced shift reduction determination for overlay metrology 有权
标题翻译：刀具诱导移位减少确定重叠度量
公开(公告)号：US08860941B2
公开(公告)日：2014-10-14
申请号：US13457832
申请日：2012-04-27
申请人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Heng-Jen Lee
发明人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Heng-Jen Lee
IPC分类号： G01B11/00
CPC分类号： G01B11/00 , G03F7/70633
摘要： One embodiment relates to a method for semiconductor workpiece processing. In this method, a baseline tool induced shift (TIS) is measured by performing a baseline number of TIS measurements on a first semiconductor workpiece. After the baseline TIS has been determined, the method determines a subsequent TIS based on a subsequent number of TIS measurements taken on a first subsequent semiconductor workpiece. The subsequent number of TIS measurements is less than the baseline number of TIS measurements.
摘要翻译：一个实施例涉及一种用于半导体工件加工的方法。在该方法中，通过在第一半导体工件上执行TIS测量的基线数量来测量基线工具诱发位移（TIS）。在确定基线TIS之后，该方法基于在第一后续半导体工件上进行的随后的TIS测量数确定随后的TIS。随后的TIS测量数量小于TIS测量的基线数量。

5. 发明申请

US20130252175A1 Litho Cluster and Modulization to Enhance Productivity 有权
标题翻译： Litho集群和模块化以提高生产力
公开(公告)号：US20130252175A1
公开(公告)日：2013-09-26
申请号：US13429921
申请日：2012-03-26
申请人： I-Hsiung Huang , Heng-Hsin Liu , Heng-Jen Lee , Chin-Hsiang Lin
发明人： I-Hsiung Huang , Heng-Hsin Liu , Heng-Jen Lee , Chin-Hsiang Lin
IPC分类号： G03F7/20 , H01L21/00
CPC分类号： G03F7/30 , G03F7/16 , G03F7/70991 , H01L21/67225 , H01L21/67745
摘要： The present disclosure relates to a lithographic tool arrangement for semiconductor workpiece processing. The lithographic tool arrangement groups lithographic tools into clusters, and selectively transfers a semiconductor workpiece between a plurality of lithographic tools of a first type in a first cluster to a plurality of lithographic tools of a second type in a second cluster. The selective transfer is achieved though a transfer assembly, which is coupled to a defect scan tool that identifies defects generated in the lithographic tool of the first type. The disclosed lithographic tool arrangement also utilizes shared structural elements such as a housing assembly, and shared functional elements such as gases and chemicals. The lithographic tool arrangement may consist of baking, coating, exposure, and development units configured to provide a modularization of these various components in order to optimize throughput and efficiency for a given lithographic fabrication process.
摘要翻译：本公开涉及一种用于半导体工件加工的平版印刷工具装置。光刻工具装置将光刻工具组合成簇，并且将半导体工件在第一簇中的第一类型的多个光刻工具之间选择性地传输到第二簇中的第二类型的光刻工具。通过转移组件实现选择性转移，转移组件耦合到识别第一类型的光刻工具中产生的缺陷的缺陷扫描工具。所公开的平版印刷工具装置还利用共同的结构元件，例如壳体组件和诸如气体和化学品的共享功能元件。光刻工具装置可以包括被配置成提供这些各种部件的模块化的烘烤，涂覆，曝光和显影单元，以便为给定的光刻制造工艺优化产量和效率。

6. 发明授权

US08199314B2 System and method for improving immersion scanner overlay performance 有权
标题翻译：提高浸没式扫描仪覆盖性能的系统和方法
公开(公告)号：US08199314B2
公开(公告)日：2012-06-12
申请号：US13288133
申请日：2011-11-03
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52 , G03B27/58 , G03B27/60 , G03B27/68 , G03B27/42 , G03B27/32
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner including a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method includes providing a water tank that connects to at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没扫描仪的覆盖性能的方法，该扫描仪包括设置在其中的水通道中的具有透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供连接到晶片台输入和晶片台输出中的至少一个的水箱; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

7. 发明申请

US20090063074A1 Mask Haze Early Detection 有权
标题翻译：面具阴霾早期检测
公开(公告)号：US20090063074A1
公开(公告)日：2009-03-05
申请号：US11866514
申请日：2007-10-03
申请人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
发明人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC分类号： G06F19/00 , G03F1/00
CPC分类号： G03F1/84 , G03F1/82
摘要： Detecting haze formation on a mask by obtaining an optical property of the mask and determining progress of the haze formation based on the obtained optical property.
摘要翻译：通过获得掩模的光学特性并基于获得的光学性质来确定雾度形成的进展来检测掩模上的雾度形成。

8. 发明授权

US08903532B2 Litho cluster and modulization to enhance productivity 有权
标题翻译： Litho集群和模块化以提高生产力
公开(公告)号：US08903532B2
公开(公告)日：2014-12-02
申请号：US13429921
申请日：2012-03-26
申请人： I-Hsiung Huang , Heng-Hsin Liu , Heng-Jen Lee , Chin-Hsiang Lin
发明人： I-Hsiung Huang , Heng-Hsin Liu , Heng-Jen Lee , Chin-Hsiang Lin
IPC分类号： H01L31/18
CPC分类号： G03F7/30 , G03F7/16 , G03F7/70991 , H01L21/67225 , H01L21/67745
摘要： The present disclosure relates to a lithographic tool arrangement for semiconductor workpiece processing. The lithographic tool arrangement groups lithographic tools into clusters, and selectively transfers a semiconductor workpiece between a plurality of lithographic tools of a first type in a first cluster to a plurality of lithographic tools of a second type in a second cluster. The selective transfer is achieved though a transfer assembly, which is coupled to a defect scan tool that identifies defects generated in the lithographic tool of the first type. The disclosed lithographic tool arrangement also utilizes shared structural elements such as a housing assembly, and shared functional elements such as gases and chemicals. The lithographic tool arrangement may consist of baking, coating, exposure, and development units configured to provide a modularization of these various components in order to optimize throughput and efficiency for a given lithographic fabrication process.
摘要翻译：本公开涉及一种用于半导体工件加工的平版印刷工具装置。光刻工具装置将光刻工具组合成簇，并且将半导体工件在第一簇中的第一类型的多个光刻工具之间选择性地传输到第二簇中的第二类型的光刻工具。通过转移组件实现选择性转移，转移组件耦合到识别第一类型的光刻工具中产生的缺陷的缺陷扫描工具。所公开的平版印刷工具装置还利用共同的结构元件，例如壳体组件和诸如气体和化学品的共享功能元件。光刻工具装置可以包括被配置成提供这些各种部件的模块化的烘烤，涂覆，曝光和显影单元，以便为给定的光刻制造工艺优化产量和效率。

9. 发明申请

US20080129969A1 System and Method For Improving Immersion Scanner Overlay Performance 有权
标题翻译：提高浸入式扫描仪覆盖性能的系统和方法
公开(公告)号：US20080129969A1
公开(公告)日：2008-06-05
申请号：US11677949
申请日：2007-02-22
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner comprising a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method comprises providing a water tank at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没式扫描仪的覆盖性能的方法，其包括设置在其中的水通道中的透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供一个水箱至少一个晶片台输入和晶片台输出; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

10. 发明授权

US09111982B2 Wafer assembly with carrier wafer 有权
标题翻译：带载体晶片的晶圆组件
公开(公告)号：US09111982B2
公开(公告)日：2015-08-18
申请号：US13539243
申请日：2012-06-29
申请人： I-Hsiung Huang , Heng-Hsin Liu , Heng-Jen Lee , Chin-Hsiang Lin
发明人： I-Hsiung Huang , Heng-Hsin Liu , Heng-Jen Lee , Chin-Hsiang Lin
IPC分类号： H01L21/683
CPC分类号： H01L21/0201 , H01L21/6835 , H01L2221/6834 , H01L2221/68381
摘要： A wafer assembly includes a process wafer and a carrier wafer. Integrated circuits are formed on the process wafer. The carrier wafer is bonded to the process wafer. The carrier wafer has at least one alignment mark.
摘要翻译：晶片组件包括处理晶片和载体晶片。集成电路形成在处理晶片上。载体晶片结合到工艺晶片。载体晶片具有至少一个对准标记。

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