专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08703368B2 Lithography process 有权
标题翻译：平版印刷工艺
公开(公告)号：US08703368B2
公开(公告)日：2014-04-22
申请号：US13550036
申请日：2012-07-16
申请人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Chin-Hsiang Lin
发明人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Chin-Hsiang Lin
IPC分类号： G03F9/00
CPC分类号： G03F7/70633
摘要： A process for use in lithography, such as photolithography for patterning a semiconductor wafer, is disclosed. The process includes receiving an incoming semiconductor wafer having various features and layers formed thereon. A unit-induced overlay (uniiOVL) correction is received and a deformation measurement is performed on the incoming semiconductor wafer in an overlay module. A deformation-induced overlay (defiOVL) correction is generated from the deformation measurement results by employing a predetermined algorithm on the deformation measurement results. The defiOVL and uniiOVL corrections are fed-forward to an exposure module and an exposure process is performed on the incoming semiconductor wafer.
摘要翻译：公开了一种用于光刻的方法，例如用于图案化半导体晶片的光刻技术。该方法包括接收具有形成在其上的各种特征和层的输入半导体晶片。接收单元引起的覆盖（uniOVL）校正，并且在覆盖模块中对输入的半导体晶片进行变形测量。通过对变形测量结果采用预定的算法，从变形测量结果生成变形诱导的覆盖（defiOVL）校正。 defiVV和unioVL校正被反馈到曝光模块，并且对输入的半导体晶片进行曝光处理。

2. 发明申请

US20140017604A1 LITHOGRAPHY PROCESS 有权
标题翻译： LITHOGRAPHY过程
公开(公告)号：US20140017604A1
公开(公告)日：2014-01-16
申请号：US13550036
申请日：2012-07-16
申请人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Chin-Hsiang Lin
发明人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Chin-Hsiang Lin
IPC分类号： G03F7/20
CPC分类号： G03F7/70633
摘要： A process for use in lithography, such as photolithography for patterning a semiconductor wafer, is disclosed. The process includes receiving an incoming semiconductor wafer having various features and layers formed thereon. A unit-induced overlay (uniiOVL) correction is received and a deformation measurement is performed on the incoming semiconductor wafer in an overlay module. A deformation-induced overlay (defiOVL) correction is generated from the deformation measurement results by employing a predetermined algorithm on the deformation measurement results. The defiOVL and uniiOVL corrections are fed-forward to an exposure module and an exposure process is performed on the incoming semiconductor wafer.
摘要翻译：公开了一种用于光刻的方法，例如用于图案化半导体晶片的光刻技术。该方法包括接收具有形成在其上的各种特征和层的输入半导体晶片。接收单元引起的覆盖（uniOVL）校正，并且在覆盖模块中对输入的半导体晶片进行变形测量。通过对变形测量结果采用预定的算法，从变形测量结果生成变形诱导的覆盖（defiOVL）校正。 defiVV和unioVL校正被反馈到曝光模块，并且对输入的半导体晶片进行曝光处理。

3. 发明申请

US20130286395A1 Tool Induced Shift Reduction Determination for Overlay Metrology 有权
标题翻译：刀具诱导换位测量用于覆盖计量学
公开(公告)号：US20130286395A1
公开(公告)日：2013-10-31
申请号：US13457832
申请日：2012-04-27
申请人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Heng-Jen Lee
发明人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Heng-Jen Lee
IPC分类号： G01B11/00
CPC分类号： G01B11/00 , G03F7/70633
摘要： One embodiment relates to a method for semiconductor workpiece processing. In this method, a baseline tool induced shift (TIS) is measured by performing a baseline number of TIS measurements on a first semiconductor workpiece. After the baseline TIS has been determined, the method determines a subsequent TIS based on a subsequent number of TIS measurements taken on a first subsequent semiconductor workpiece. The subsequent number of TIS measurements is less than the baseline number of TIS measurements.
摘要翻译：一个实施例涉及一种用于半导体工件加工的方法。在该方法中，通过在第一半导体工件上执行TIS测量的基线数量来测量基线工具诱发位移（TIS）。在确定基线TIS之后，该方法基于在第一后续半导体工件上进行的随后的TIS测量数确定随后的TIS。随后的TIS测量数量小于TIS测量的基线数量。

4. 发明授权

US08860941B2 Tool induced shift reduction determination for overlay metrology 有权
标题翻译：刀具诱导移位减少确定重叠度量
公开(公告)号：US08860941B2
公开(公告)日：2014-10-14
申请号：US13457832
申请日：2012-04-27
申请人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Heng-Jen Lee
发明人： Yung-Yao Lee , Ying Ying Wang , Heng-Hsin Liu , Heng-Jen Lee
IPC分类号： G01B11/00
CPC分类号： G01B11/00 , G03F7/70633
摘要： One embodiment relates to a method for semiconductor workpiece processing. In this method, a baseline tool induced shift (TIS) is measured by performing a baseline number of TIS measurements on a first semiconductor workpiece. After the baseline TIS has been determined, the method determines a subsequent TIS based on a subsequent number of TIS measurements taken on a first subsequent semiconductor workpiece. The subsequent number of TIS measurements is less than the baseline number of TIS measurements.
摘要翻译：一个实施例涉及一种用于半导体工件加工的方法。在该方法中，通过在第一半导体工件上执行TIS测量的基线数量来测量基线工具诱发位移（TIS）。在确定基线TIS之后，该方法基于在第一后续半导体工件上进行的随后的TIS测量数确定随后的TIS。随后的TIS测量数量小于TIS测量的基线数量。

5. 发明授权

US09188876B2 Method of determining overlay error and control system for dynamic control of reticle position 有权
标题翻译：确定掩模位置动态控制的重叠误差和控制系统的方法
公开(公告)号：US09188876B2
公开(公告)日：2015-11-17
申请号：US13368085
申请日：2012-02-07
申请人： Yung-Yao Lee , Sophia Wang , Fei-Gwo Tsai , Heng-Hsin Liu
发明人： Yung-Yao Lee , Sophia Wang , Fei-Gwo Tsai , Heng-Hsin Liu
IPC分类号： G03B27/68 , G03B27/32 , G03F7/20 , G03F1/44 , G03B27/42
CPC分类号： G03F7/70633 , G03F1/44
摘要： A method of determining overlay error. The method includes transferring a pattern from a reticle to a wafer and selecting a first set of data points to measure the positional difference between features on the reticle and features on the wafer. The method also includes determining a second set of data points characteristic of the first set of data points but containing fewer data points. A control system for using the second set of data points to dynamically adjust the position of the reticle.
摘要翻译：确定重叠错误的方法。该方法包括将图案从掩模版转移到晶片并选择第一组数据点以测量掩模版上的特征与晶片上的特征之间的位置差异。该方法还包括确定第一组数据点的特征的第二组数据点，但是包含较少的数据点。一种用于使用第二组数据点的控制系统来动态地调整光罩的位置。

6. 发明授权

US08476003B2 Iterative rinse for semiconductor fabrication 有权
标题翻译：用于半导体制造的迭代冲洗
公开(公告)号：US08476003B2
公开(公告)日：2013-07-02
申请号：US13044277
申请日：2011-03-09
申请人： Yung-Yao Lee , Wei-Hong Chuang , Li-Shiuan Chen , Ping-Hsi Yang
发明人： Yung-Yao Lee , Wei-Hong Chuang , Li-Shiuan Chen , Ping-Hsi Yang
IPC分类号： G03F7/26
CPC分类号： G03F7/405 , H01L21/0206
摘要： An iterative rinse for fabrication of semiconductor devices is described. The iterative rinse includes a plurality of rinse cycles, wherein each of the plurality of rinse cycles has a different resistivity. The plurality of rinse cycles may include a first rinse of a semiconductor substrate with de-ionized (DI) water and carbon dioxide (CO2), followed by a second rinse the semiconductor substrate with DI water and CO2. The first rinse has a first resistivity; the second rinse has a second resistivity lower than the first resistivity.
摘要翻译：描述了用于制造半导体器件的迭代冲洗。迭代冲洗包括多个漂洗循环，其中多个漂洗循环中的每一个具有不同的电阻率。多个漂洗循环可以包括具有去离子（DI）水和二氧化碳（CO 2）的半导体衬底的第一次冲洗，随后用DI水和CO 2冲洗半导体衬底。第一冲洗具有第一电阻率; 第二冲洗具有比第一电阻率低的第二电阻率。

7. 发明申请

US20060064194A1 Methods and systems for determining lithography overlay offsets 审中-公开
标题翻译：确定光刻重叠偏移的方法和系统
公开(公告)号：US20060064194A1
公开(公告)日：2006-03-23
申请号：US10974715
申请日：2004-10-28
申请人： Yung-Yao Lee
发明人： Yung-Yao Lee
IPC分类号： G06F19/00
CPC分类号： G03F7/70633 , G03F7/70533 , G03F9/7003 , G03F9/7011 , G03F9/7019 , G03F9/7046
摘要： A system for determining lithography overlay offsets is described. The system comprises a first database, a second database, and a controller. The first database stores operation records of lots processed consecutively by an exposure tool, wherein each lot corresponds to a layer of a product, and the operation records pertain to a subsequent lot Lk and a previous lot Lk-1 corresponding to products A and B, respectively. The second database stores overlay information of lots corresponding to the products A and B, comprising overlay information DA,X and DB,Y corresponding to Xth and yth records of products A and B. The controller determines the overlay offset corresponding to lot Lk according to the overlay information DA,X and DB,Y.
摘要翻译：描述了一种用于确定光刻叠加偏移的系统。该系统包括第一数据库，第二数据库和控制器。第一数据库存储由曝光工具连续处理的批次的操作记录，其中每个批对应于产品的层，并且操作记录与随后的批次L＆lt; k＆gt;和之前的批次L < SUB> k-1 分别对应于产品A和B. 第二数据库存储与产品A和B相对应的批次的重叠信息，其中包括对应于X'的叠加信息D A，X和D B，Y， / SUP>和第个产品A和B的记录。控制器根据重叠信息D A，X，X确定与批次L＆lt; k＆gt;相对应的叠加偏移和/或B B，Y 。

8. 发明授权

US08852673B2 Defect monitoring for resist layer 有权
标题翻译：抗蚀剂层缺陷监测
公开(公告)号：US08852673B2
公开(公告)日：2014-10-07
申请号：US13286451
申请日：2011-11-01
申请人： Che-Rong Laing , Li-Kong Turn , Yung-Yao Lee , Ping-Hsi Yang
发明人： Che-Rong Laing , Li-Kong Turn , Yung-Yao Lee , Ping-Hsi Yang
IPC分类号： G03F7/26 , G03F7/40 , G03F7/42
CPC分类号： G03F7/26 , G03F7/40 , G03F7/405
摘要： Methods for detecting and monitoring defects in a resist material are disclosed. In an example, a method includes forming a resist layer over a substrate; developing the resist layer; washing the developed resist layer with a thinner wash solution, wherein the washing reveals any negatively charged defects in the developed resist layer; and after the washing, inspecting for the negatively charged defects.
摘要翻译：公开了用于检测和监测抗蚀剂材料中的缺陷的方法。在一个实例中，一种方法包括在衬底上形成抗蚀剂层; 显影抗蚀层; 用较薄的洗涤溶液洗涤显影的抗蚀剂层，其中洗涤显示显影的抗蚀剂层中的任何带负电荷的缺陷; 洗涤后，检查带负电的缺陷。

9. 发明申请

US20130108775A1 DEFECT MONITORING FOR RESIST LAYER 有权
标题翻译：防腐层的缺陷监测
公开(公告)号：US20130108775A1
公开(公告)日：2013-05-02
申请号：US13286451
申请日：2011-11-01
申请人： Che-Rong Laing , Li-Kong Turn , Yung-Yao Lee , Ping-Hsi Yang
发明人： Che-Rong Laing , Li-Kong Turn , Yung-Yao Lee , Ping-Hsi Yang
IPC分类号： B05D3/10
CPC分类号： G03F7/26 , G03F7/40 , G03F7/405
摘要： Methods for detecting and monitoring defects in a resist material are disclosed. In an example, a method includes forming a resist layer over a substrate; developing the resist layer; washing the developed resist layer with a thinner wash solution, wherein the washing reveals any negatively charged defects in the developed resist layer; and after the washing, inspecting for the negatively charged defects.
摘要翻译：公开了用于检测和监测抗蚀剂材料中的缺陷的方法。在一个实例中，一种方法包括在衬底上形成抗蚀剂层; 显影抗蚀层; 用较薄的洗涤溶液洗涤显影的抗蚀剂层，其中洗涤显示显影的抗蚀剂层中的任何带负电荷的缺陷; 洗涤后，检查带负电的缺陷。

10. 发明申请

US20050154484A1 Photolithographic parameter feedback system and control method thereof 审中-公开
标题翻译：光刻参数反馈系统及其控制方法
公开(公告)号：US20050154484A1
公开(公告)日：2005-07-14
申请号：US10949361
申请日：2004-09-27
申请人： Yung-Yao Lee , Tseng-Yung Wang
发明人： Yung-Yao Lee , Tseng-Yung Wang
IPC分类号： G03F7/20 , G06F19/00
CPC分类号： G03F7/705 , G03F7/70533 , G03F7/70633
摘要： A photolithographic parameter feedback system is described. The photolithographic parameter feedback system includes a database containing substrate history information of a lot having at least one measurement data after exposure of a pre-layer of substrates of a predetermined lot and an exposure tool history information having at least one measurement data after exposure of a predetermined layer of substrates of a pre-lot, and an exposure tool exposing the substrates of the predetermined lot, wherein at least one exposure parameter thereof is updated by feedback of the substrate history information of the lot and the exposure tool history information.
摘要翻译：描述光刻参数反馈系统。光刻参数反馈系统包括数据库，该数据库包含具有在预定批次的基板的预先曝光之后具有至少一个测量数据的批次的基板历史信息和在曝光之后具有至少一个测量数据的曝光工具历史信息预定批次的预定层的基板和暴露预定批次的基板的曝光工具，其中通过对批次的基板历史信息和曝光工具历史信息的反馈来更新其至少一个曝光参数。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式