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1. 发明授权

US07796249B2 Mask haze early detection 有权
标题翻译：面罩雾霭早期检测
公开(公告)号：US07796249B2
公开(公告)日：2010-09-14
申请号：US11866514
申请日：2007-10-03
申请人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
发明人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC分类号： G01N21/00
CPC分类号： G03F1/84 , G03F1/82
摘要： Detecting haze formation on a mask by obtaining an optical property of the mask and determining progress of the haze formation based on the obtained optical property.
摘要翻译：通过获得掩模的光学特性并基于获得的光学性质来确定雾度形成的进展来检测掩模上的雾度形成。

2. 发明申请

US20090063074A1 Mask Haze Early Detection 有权
标题翻译：面具阴霾早期检测
公开(公告)号：US20090063074A1
公开(公告)日：2009-03-05
申请号：US11866514
申请日：2007-10-03
申请人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
发明人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC分类号： G06F19/00 , G03F1/00
CPC分类号： G03F1/84 , G03F1/82
摘要： Detecting haze formation on a mask by obtaining an optical property of the mask and determining progress of the haze formation based on the obtained optical property.
摘要翻译：通过获得掩模的光学特性并基于获得的光学性质来确定雾度形成的进展来检测掩模上的雾度形成。

3. 发明授权

US08199314B2 System and method for improving immersion scanner overlay performance 有权
标题翻译：提高浸没式扫描仪覆盖性能的系统和方法
公开(公告)号：US08199314B2
公开(公告)日：2012-06-12
申请号：US13288133
申请日：2011-11-03
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52 , G03B27/58 , G03B27/60 , G03B27/68 , G03B27/42 , G03B27/32
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner including a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method includes providing a water tank that connects to at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没扫描仪的覆盖性能的方法，该扫描仪包括设置在其中的水通道中的具有透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供连接到晶片台输入和晶片台输出中的至少一个的水箱; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

4. 发明授权

US08068208B2 System and method for improving immersion scanner overlay performance 有权
标题翻译：提高浸没式扫描仪覆盖性能的系统和方法
公开(公告)号：US08068208B2
公开(公告)日：2011-11-29
申请号：US11677949
申请日：2007-02-22
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52 , G03B27/68 , G03B27/42 , G03B27/58 , G03B27/60 , G03B27/32
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner including a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method includes providing a water tank that connects to at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没扫描仪的覆盖性能的方法，该扫描仪包括设置在其中的水通道中的具有透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供连接到晶片台输入和晶片台输出中的至少一个的水箱; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

5. 发明申请

US20080129969A1 System and Method For Improving Immersion Scanner Overlay Performance 有权
标题翻译：提高浸入式扫描仪覆盖性能的系统和方法
公开(公告)号：US20080129969A1
公开(公告)日：2008-06-05
申请号：US11677949
申请日：2007-02-22
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner comprising a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method comprises providing a water tank at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没式扫描仪的覆盖性能的方法，其包括设置在其中的水通道中的透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供一个水箱至少一个晶片台输入和晶片台输出; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

6. 发明申请

US20090268184A1 System and Method for Direct Writing to a Wafer 有权
标题翻译：直接写入晶片的系统和方法
公开(公告)号：US20090268184A1
公开(公告)日：2009-10-29
申请号：US12203494
申请日：2008-09-03
申请人： Burn Jeng Lin , Jeng-Horng Chen , Shy-Jay Lin , Tsai-Sheng Gau
发明人： Burn Jeng Lin , Jeng-Horng Chen , Shy-Jay Lin , Tsai-Sheng Gau
IPC分类号： G03B27/54
CPC分类号： G03F7/70383 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A direct-write (DW) exposure system is provided which includes a stage for holding a substrate and configured to scan the substrate along an axis during exposure, a data processing module for processing pattering data and generating instructions associated with the patterning data, and an exposure module that includes a plurality of beams that are focused onto the substrate such that the beams cover a width that is larger than a width of a field size and a beam controller that controls the plurality of beams in accordance with the instructions as the substrate is scanned along the axis. The widths are in a direction different from the axis.
摘要翻译：提供了一种直接写入（DW）曝光系统，其包括用于保持衬底并被配置为在曝光期间沿着轴扫描衬底的台，用于处理图案数据并产生与图案形成数据相关联的指令的数据处理模块，以及曝光模块，其包括聚焦在基板上的多个光束，使得光束覆盖大于场大小的宽度的宽度;以及根据作为衬底的指令来控制多个光束的光束控制器沿轴扫描。宽度在与轴不同的方向。

7. 发明授权

US07851774B2 System and method for direct writing to a wafer 有权
标题翻译：用于直接写入晶片的系统和方法
公开(公告)号：US07851774B2
公开(公告)日：2010-12-14
申请号：US12203494
申请日：2008-09-03
申请人： Burn Jeng Lin , Jeng-Horng Chen , Shy-Jay Lin , Tsai-Sheng Gau
发明人： Burn Jeng Lin , Jeng-Horng Chen , Shy-Jay Lin , Tsai-Sheng Gau
IPC分类号： H01J49/44
CPC分类号： G03F7/70383 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A direct-write (DW) exposure system is provided which includes a stage for holding a substrate and configured to scan the substrate along an axis during exposure, a data processing module for processing pattering data and generating instructions associated with the patterning data, and an exposure module that includes a plurality of beams that are focused onto the substrate such that the beams cover a width that is larger than a width of a field size and a beam controller that controls the plurality of beams in accordance with the instructions as the substrate is scanned along the axis. The widths are in a direction different from the axis.
摘要翻译：提供了一种直接写入（DW）曝光系统，其包括用于保持衬底并被配置为在曝光期间沿着轴扫描衬底的台，用于处理图案数据并产生与图案形成数据相关联的指令的数据处理模块，以及曝光模块，其包括聚焦在基板上的多个光束，使得光束覆盖大于场大小的宽度的宽度;以及根据作为衬底的指令来控制多个光束的光束控制器沿轴扫描。宽度在与轴不同的方向。

8. 发明申请

US20080195243A1 Method and System for Improving Critical Dimension Uniformity 有权
标题翻译：改进关键尺寸均匀性的方法与系统
公开(公告)号：US20080195243A1
公开(公告)日：2008-08-14
申请号：US11674497
申请日：2007-02-13
申请人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
发明人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
IPC分类号： G06F19/00
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method for improving critical dimension of a substrate is provided. Manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate is collected. A plurality of sensitivity data corresponding to the plurality of areas is also collected. A plurality of exposure dosage offsets corresponding to the plurality of areas are calculated based on the plurality of critical dimension deviations and the plurality of sensitivity data.
摘要翻译：提供了一种改善基板临界尺寸的方法。收集对应于基板上的多个区域的多个临界尺寸偏差的制造数据。还收集对应于多个区域的多个灵敏度数据。基于多个临界尺寸偏差和多个灵敏度数据来计算对应于多个区域的多个曝光剂量偏移量。

9. 发明授权

US07571021B2 Method and system for improving critical dimension uniformity 有权
标题翻译：改善临界尺寸均匀性的方法和系统
公开(公告)号：US07571021B2
公开(公告)日：2009-08-04
申请号：US11674497
申请日：2007-02-13
申请人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
发明人： Chun-Hung Lin , Shy-Jay Lin , Heng-Hsin Liu , Chien-Hsun Lin , Jui-Chung Peng , Yao-Wen Guo
IPC分类号： G06F19/00 , G05B13/02
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method for improving critical dimension of a substrate is provided. Manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate is collected. A plurality of sensitivity data corresponding to the plurality of areas is also collected. A plurality of exposure dosage offsets corresponding to the plurality of areas are calculated based on the plurality of critical dimension deviations and the plurality of sensitivity data.
摘要翻译：提供了一种改善基板临界尺寸的方法。收集对应于基板上的多个区域的多个临界尺寸偏差的制造数据。还收集对应于多个区域的多个灵敏度数据。基于多个临界尺寸偏差和多个灵敏度数据来计算对应于多个区域的多个曝光剂量偏移量。

10. 发明授权

US06428938B1 Phase-shift mask for printing high-resolution images and a method of fabrication 有权
标题翻译：用于打印高分辨率图像的相移掩模和制造方法
公开(公告)号：US06428938B1
公开(公告)日：2002-08-06
申请号：US09596900
申请日：2000-06-19
申请人： Chin-Hsiang Lin , Shy-Jay Lin , Sheng-Chi Chin , Wei-Zen Chou
发明人： Chin-Hsiang Lin , Shy-Jay Lin , Sheng-Chi Chin , Wei-Zen Chou
IPC分类号： G03F900
CPC分类号： G03F1/30
摘要： An improved phase-shift photomask and method of fabrication are described. The method for making this phase-shift mask involves depositing an opaque film, such as chromium (Cr), on a transparent plate, such as SiO2 (quartz plate). An electron beam photoresist layer is deposited on the Cr film and is partially exposed in regions A and completely exposed in closely spaced alternate regions B by an electron beam. The exposed photoresist is then developed. The Cr film is etched in regions B while the remaining resist in regions A protect the Cr from etching. The e-bean resist is plasma etched back to remove the resist over regions A and then the quartz plate in regions B is recessed to a depth d by plasma etching while the Cr protects the quartz in regions A from etching. The recess is etched to a depth to provide an optical path difference between A and B of ½ wavelength (180°) when UV light is transmitted through the mask to expose resist on a product substrate. This 180° phase-shift minimizes the diffracted light under the Cr film between regions A and B and improves the DOF and therefore the photoresist resolution. Since a single e-beam resist is used to make the mask it is more manufacturing cost effective with improved alignment accuracy between regions A and B.
摘要翻译：描述了改进的相移光掩模和制造方法。制造该相移掩模的方法包括在诸如SiO 2（石英板）的透明板上沉积不透明的膜，例如铬（Cr）。电子束光致抗蚀剂层沉积在Cr膜上，并部分暴露在区域A中，并通过电子束完全暴露在紧密间隔的交替区域B中。然后曝光的光刻胶显影。在区域B中蚀刻Cr膜，而区域A中的剩余抗蚀剂保护Cr不被蚀刻。等离子体蚀刻回蚀刻e-bean抗蚀剂以去除区域A上的抗蚀剂，然后通过等离子体蚀刻将区域B中的石英板凹入深度d，同时Cr保护区域A中的石英免受蚀刻。当UV光通过掩模透射以暴露产品基底上的抗蚀剂时，凹陷被蚀刻到深度以提供½波长（180°）的A和B之间的光程差。这种180°相移使区域A和B之间的Cr膜下的衍射光最小化，并且改善了DOF并因此改善了光刻胶分辨率。由于使用单个电子束抗蚀剂来制造掩模，因此在区域A和区域B之间具有改善的对准精度是更具制造成本效益的。

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