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1. 发明授权

US06339007B1 Capacitor stack structure and method of fabricating description 失效
标题翻译：电容器堆叠结构及其制造方法
公开(公告)号：US06339007B1
公开(公告)日：2002-01-15
申请号：US09562556
申请日：2000-05-02
申请人： Yun-Yu Wang , Rajarao Jammy , Lee J. Kimball , David E. Kotecki , Jenny Lian , Chenting Lin , John A. Miller , Nicholas Nagel , Hua Shen , Horatio S. Wildman
发明人： Yun-Yu Wang , Rajarao Jammy , Lee J. Kimball , David E. Kotecki , Jenny Lian , Chenting Lin , John A. Miller , Nicholas Nagel , Hua Shen , Horatio S. Wildman
IPC分类号： H01L2120
CPC分类号： H01L28/75 , H01L28/55 , H01L28/60
摘要： A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second insulator portion is provided.
摘要翻译：一种电容器结构，其包括顶部铂电极和在电极的侧壁上具有绝缘体的底部电极，并且其中底部电极从沉积相对于绝缘体在其侧壁上凹进的第一电极部分并且沉积第二绝缘体提供部分。

2. 发明授权

US06420267B1 Method for forming an integrated barrier/plug for a stacked capacitor 有权
标题翻译：用于形成叠层电容器的集成屏障/插头的方法
公开(公告)号：US06420267B1
公开(公告)日：2002-07-16
申请号：US09551757
申请日：2000-04-18
申请人： Chenting Lin , Ronald J. Schutz , Andreas Knorr , Keith Wong , Hua Shen , Jenny Lian
发明人： Chenting Lin , Ronald J. Schutz , Andreas Knorr , Keith Wong , Hua Shen , Jenny Lian
IPC分类号： H01L2100
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/55
摘要： A method of forming an integrated barrier/contact for stacked capacitors is provided which results in reduced cost of ownership and in a barrier which is nominally several times thicker than convention structures. The resulting structure results in decreased contact plug resistance as compared with conventional devices.
摘要翻译：提供了一种形成用于层叠电容器的集成屏障/触点的方法，其导致所有权成本降低以及名义上比常规结构厚几倍的屏障。与常规装置相比，所得结构导致接触插头电阻降低。

3. 发明授权

US06413866B1 Method of forming a solute-enriched layer in a substrate surface and article formed thereby 有权
标题翻译：在基材表面形成富含溶质层的方法和由此形成的制品
公开(公告)号：US06413866B1
公开(公告)日：2002-07-02
申请号：US09525367
申请日：2000-03-15
申请人： Horatio S. Wildman , Lawrence A. Clevenger , Chenting Lin , Kenneth P. Rodbell , Stefan Weber , Roy C. Iggulden , Maria Ronay , Florian Schnabel
发明人： Horatio S. Wildman , Lawrence A. Clevenger , Chenting Lin , Kenneth P. Rodbell , Stefan Weber , Roy C. Iggulden , Maria Ronay , Florian Schnabel
IPC分类号： H01L2144
CPC分类号： H01L21/7685 , H01L21/321 , H01L21/76867 , H01L21/76888 , H01L23/53219 , H01L2924/0002 , H01L2924/00
摘要： A method of enriching the surface of a substrate with a solute material that was originally dissolved in the substrate material, to yield a uniform dispersion of the solute material at the substrate surface. The method generally entails the use of a solvent material that is more reactive than the solute material to a chosen reactive agent. The surface of the substrate is reacted with the reactive agent to preferentially form a reaction compound of the solvent material at the surface of the substrate. As the compound layer develops, the solute material segregates or diffuses out of the compound layer and into the underlying substrate, such that the region of the substrate nearest the compound layer becomes enriched with the solute material. At least a portion of the compound layer is then removed without removing the underlying enriched region of the substrate. For microcircuit applications, the method can be used to enrich the surface of an aluminum line with elemental copper to improve the electromigration resistance of the line.
摘要翻译：一种使用最初溶解在基片材料中的溶质材料来富集基片的表面的方法，以使溶质材料在基片表面上均匀分散。该方法通常需要使用比溶质材料对选择的反应剂更具反应性的溶剂材料。使基板的表面与反应剂反应，以优先在基材的表面形成溶剂材料的反应化合物。当化合物层发展时，溶质材料从化合物层中分离或扩散到下面的衬底中，使得最接近化合物层的衬底的区域变得富集溶质材料。然后除去化合物层的至少一部分而不去除底物的下面的富集区域。对于微电路应用，该方法可用于通过元素铜来丰富铝线的表面，以提高线路的电迁移能力。

4. 发明申请

US20050196917A1 Method for forming a (111) oriented BSTO thin film layer for high dielectric constant capacitors 审中-公开
标题翻译：用于形成用于高介电常数电容器的（111）取向的BSTO薄膜层的方法
公开(公告)号：US20050196917A1
公开(公告)日：2005-09-08
申请号：US10790786
申请日：2004-03-03
申请人： Jingyu Lian , David Kotecki , Hua Shen , Robert Laibowitz , Katherine Saenger , Chenting Lin , Nicolas Nagel , Yunyu Wang , Satish Athavale , Thomas Shaw
发明人： Jingyu Lian , David Kotecki , Hua Shen , Robert Laibowitz , Katherine Saenger , Chenting Lin , Nicolas Nagel , Yunyu Wang , Satish Athavale , Thomas Shaw
IPC分类号： H01L21/8242
CPC分类号： H01L28/40 , H01L27/10852
摘要： A method for forming high capacitance crystalline dielectric layers with (111) texture is disclosed. In an exemplary embodiment, deposition of a plurality of nuclei is performed at a temperature in the range of about 430 to 460 degrees Celsius, followed by growth of a continuous BSTO dielectric layer at a temperature greater than 600 degrees Celsius. In an exemplary embodiment, a process is disclosed for growing a barium strontium titanium oxide film with high capacitance and thickness of about 30 nm or less.
摘要翻译：公开了一种形成具有（111）结构的高电容结晶介电层的方法。在一个示例性实施例中，多个核的沉积在约430至460摄氏度范围内的温度下进行，随后在大于600摄氏度的温度下生长连续的BSTO介电层。在示例性实施例中，公开了用于生长具有约30nm或更小的高电容和厚度的钡锶氧化钛膜的方法。

5. 发明申请

US20050023590A1 Multi-layer electrode and method of forming the same 有权
标题翻译：多层电极及其形成方法
公开(公告)号：US20050023590A1
公开(公告)日：2005-02-03
申请号：US10929157
申请日：2004-08-30
申请人： Jingyu Lian , Chenting Lin , Nicolas Nagel , Michael Wise
发明人： Jingyu Lian , Chenting Lin , Nicolas Nagel , Michael Wise
IPC分类号： H01L21/02 , H01L23/48 , H01L29/76
CPC分类号： H01L28/75 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65 , Y10S257/906 , Y10S257/908
摘要： A multi-layer electrode (246) and method of fabrication thereof in which a conductive region (244) is separated from a barrier layer (222) by a first conductive liner (240) and a second conductive liner (242). First conductive layer (240) comprises Pt, and second conductive liner (242) comprises a thin layer of conductive oxide. The multi-layer electrode (246) prevents oxygen diffusion through the top conductive region (244) and reduces material variation during electrode patterning.
摘要翻译：一种多层电极（246）及其制造方法，其中通过第一导电衬垫（240）和第二导电衬套（242）将导电区域（244）与阻挡层（222）分离。第一导电层（240）包括Pt，并且第二导电衬垫（242）包括导电氧化物的薄层。多层电极（246）防止氧扩散通过顶部导电区域（244）并且减少电极图案化期间的材料变化。

6. 发明授权

US06222220B1 Extended trench for preventing interaction between components of stacked capacitors 有权
标题翻译：扩展沟槽，用于防止堆叠电容器组件之间的相互作用
公开(公告)号：US06222220B1
公开(公告)日：2001-04-24
申请号：US09209198
申请日：1998-12-10
申请人： Chenting Lin , Andreas Knorr
发明人： Chenting Lin , Andreas Knorr
IPC分类号： H01L31119
CPC分类号： H01L27/10852
摘要： A stacked capacitor, in accordance with the present invention includes a conductive plug disposed within a trench for connecting to an access device. A barrier is formed on the plug and is disposed within the trench. A dielectric layer is formed over the trench, the dielectric layer forming a hole therethrough exposing at least a portion of the barrier. A first electrode is formed within the hole and extends from the hole. A capacitor dielectric layer is formed on the first electrode and separating the first electrode from a second electrode, and the dielectric layer and the first electrode substantially prevent chemical interactions between materials of the barrier and materials of the capacitor dielectric layer and an oxidizing environment used to form the capacitor dielectric layer. A method of fabrication is also included.
摘要翻译：根据本发明的层叠电容器包括设置在沟槽内用于连接到接入装置的导电插头。在插头上形成屏障并设置在沟槽内。在沟槽上形成电介质层，电介质层形成穿过其的至少一部分屏障的孔。第一电极形成在孔内并从孔延伸。电容器电介质层形成在第一电极上，并且将第一电极与第二电极分开，并且电介质层和第一电极基本上防止了阻挡材料和电容器介电层的材料之间的化学相互作用以及用于形成电容器介电层。还包括制造方法。

7. 发明申请

US20080108203A1 Multi-Layer Electrode and Method of Forming the Same 审中-公开
标题翻译：多层电极及其形成方法
公开(公告)号：US20080108203A1
公开(公告)日：2008-05-08
申请号：US11972147
申请日：2008-01-10
申请人： Jingyu Lian , Chenting Lin , Nicolas Nagel , Micheal Wise
发明人： Jingyu Lian , Chenting Lin , Nicolas Nagel , Micheal Wise
IPC分类号： H01L21/20 , H01L21/44
CPC分类号： H01L28/75 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65 , Y10S257/906 , Y10S257/908
摘要： An interconnect includes an opening formed in a dielectric layer. A conductive barrier is deposited in the opening, over which a first conductive layer is deposited. A conductive oxide is deposited over the first conductive layer, and a second conductive layer, formed from the same material as the first conductive layer, is deposited over the conductive liner.
摘要翻译：互连包括形成在电介质层中的开口。导电屏障沉积在开口中，在其上沉积第一导电层。导电氧化物沉积在第一导电层之上，并且由与第一导电层相同的材料形成的第二导电层沉积在导电衬垫上。

8. 发明授权

US06794705B2 Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials 失效
标题翻译：用于DRAM的多层Pt电极和具有高K电介质材料的FRAM
公开(公告)号：US06794705B2
公开(公告)日：2004-09-21
申请号：US09751551
申请日：2000-12-28
申请人： Jingyu Lian , Chenting Lin , Nicolas Nagel , Michael Wise
发明人： Jingyu Lian , Chenting Lin , Nicolas Nagel , Michael Wise
IPC分类号： H01L27108
CPC分类号： H01L28/75 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65 , Y10S257/906 , Y10S257/908
摘要： A multi-layer electrode (246) and method of fabrication thereof in which a conductive region (244) is separated from a barrier layer (222) by a first conductive liner (240) and a second conductive liner (242). First conductive layer (240) comprises Pt, and second conductive liner (242) comprises a thin layer of conductive oxide. The multi-layer electrode (246) prevents oxygen diffusion through the top conductive region (244) and reduces material variation during electrode patterning.
摘要翻译：一种多层电极（246）及其制造方法，其中通过第一导电衬垫（240）和第二导电衬套（242）将导电区域（244）与阻挡层（222）分离。第一导电层（240）包括Pt，并且第二导电衬垫（242）包括导电氧化物的薄层。多层电极（246）防止氧扩散通过顶部导电区域（244）并且减少电极图案化期间的材料变化。

9. 发明授权

US06685796B1 CMP uniformity 有权
标题翻译： CMP均匀性
公开(公告)号：US06685796B1
公开(公告)日：2004-02-03
申请号：US09639986
申请日：2000-08-16
申请人： Chenting Lin , Robert van den Berg , Sumit Pandey
发明人： Chenting Lin , Robert van den Berg , Sumit Pandey
IPC分类号： H01L21306
CPC分类号： B24B37/04 , B24B57/02
摘要： Improved CMP uniformity is achieved by providing improved control of the slurry distribution. Improved slurry distribution is achieved by, for example, the use of a slurry dispenser that dispenses slurry from a plurality of dispensing points. Providing a squeeze bar between the slurry dispenser and wafer to redistribute the slurry also improves the slurry distribution.
摘要翻译：通过提供浆料分布的改进控制来实现改进的CMP均匀性。通过例如使用从多个分配点分配浆料的浆料分配器来实现改进的浆料分布。在浆料分配器和晶片之间提供挤压棒以重新分配浆料也改善了浆料分布。

10. 发明授权

US06432725B1 Methods for crystallizing metallic oxide dielectric films at low temperature 有权
标题翻译：在低温下结晶金属氧化物介质膜的方法
公开(公告)号：US06432725B1
公开(公告)日：2002-08-13
申请号：US09966496
申请日：2001-09-28
申请人： Jingyu Lian , Kwong Hon Wong , Katherine Saenger , Chenting Lin
发明人： Jingyu Lian , Kwong Hon Wong , Katherine Saenger , Chenting Lin
IPC分类号： H01L2100
CPC分类号： H01L28/56 , C23C16/409 , C23C16/56 , H01L21/02197 , H01L21/0234 , H01L21/02356 , H01L21/31691
摘要： A method for forming a crystalline dielectric layer deposits an amorphous metallic oxide dielectric layer on a surface. The amorphous metallic oxide dielectric layer is treated with a plasma at a temperature of less than or equal to 400 degrees Celsius to form a crystalline layer.
摘要翻译：用于形成结晶介电层的方法在表面上沉积无定形金属氧化物介电层。在小于或等于400摄氏度的温度下用等离子体处理无定形金属氧化物介电层以形成结晶层。

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