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1. 发明申请

US20140113900A1 SUBSTITUTED IMIDAZOPYRIDINES AND THE USE THEREOF 有权
标题翻译：取代的咪唑吡啶及其用途
公开(公告)号：US20140113900A1
公开(公告)日：2014-04-24
申请号：US14115871
申请日：2012-05-02
申请人： Markus Follmann , Johannes-Peter Stasch , Gorden Redlich , Alexander Straub , Jens Ackerstaff , Nils Griebenow , Andreas Knorr , Frank Wunder , Volkhart Min-Jian Li
发明人： Markus Follmann , Johannes-Peter Stasch , Gorden Redlich , Alexander Straub , Jens Ackerstaff , Nils Griebenow , Andreas Knorr , Frank Wunder , Volkhart Min-Jian Li
IPC分类号： C07D487/04 , A61K31/5025 , A61K45/06 , A61K31/53
CPC分类号： C07D487/04 , A61K31/5025 , A61K31/53 , A61K45/06
摘要： The present application relates to novel substituted imidazopyridazines, to processes for their preparation, to their use, alone or in combinations, for the treatment and/or prophylaxis of diseases and to their use for production of medicaments for the treatment and/or prophylaxis of diseases, especially for the treatment and/or prophylaxis of cardiovascular disorders.
摘要翻译：本申请涉及新型取代的咪唑并哒嗪，其制备方法，其单独或组合用于治疗和/或预防疾病及其用于生产用于治疗和/或预防疾病的药物的用途，特别是用于治疗和/或预防心血管疾病。

2. 发明授权

US08653109B2 Substituted bipyridine derivatives and their use as adenosine receptor ligands 失效
标题翻译：取代的联吡啶衍生物及其作为腺苷受体配体的用途
公开(公告)号：US08653109B2
公开(公告)日：2014-02-18
申请号：US12440423
申请日：2007-08-30
申请人： Peter Nell , Walter Hübsch , Barbara Albrecht-Küpper , Joerg Keldenich , Andreas Knorr
发明人： Peter Nell , Walter Hübsch , Barbara Albrecht-Küpper , Joerg Keldenich , Andreas Knorr
IPC分类号： A61K31/444 , C07D211/60
CPC分类号： C07D417/14 , A61K31/444 , A61K31/501 , A61K31/506 , A61K31/5377 , A61K45/06 , C07D213/85 , C07D401/14 , C07D409/14 , C07D413/14
摘要： The present invention relates to novel substituted 2,4′- and 3,4′-bipyridine derivatives, to processes for their preparation, to their use for the treatment and/or prophylaxis of diseases and to their use for preparing medicaments for the treatment and/or prophylaxis of diseases, preferably for the treatment and/or prevention of hypertension and other cardiovascular disorders.
摘要翻译：本发明涉及新的取代的2,4'-和3,4'-联吡啶衍生物，其制备方法，其用于治疗和/或预防疾病的用途及其用于制备治疗用药物和 /或预防疾病，优选用于治疗和/或预防高血压和其它心血管疾病。

3. 发明授权

US08609727B2 Dicarboxylic acid derivatives and their use 失效
标题翻译：二羧酸衍生物及其用途
公开(公告)号：US08609727B2
公开(公告)日：2013-12-17
申请号：US12083814
申请日：2006-10-17
申请人： Stephan Bartel , Michael Hahn , Wahed Ahmed Moradi , Eva-Maria Becker , Thomas Rölle , Johannes-Peter Stasch , Karl-Heinz Schlemmer , Frank Wunder , Andreas Knorr , Dieter Lang
发明人： Stephan Bartel , Michael Hahn , Wahed Ahmed Moradi , Eva-Maria Becker , Thomas Rölle , Johannes-Peter Stasch , Karl-Heinz Schlemmer , Frank Wunder , Andreas Knorr , Dieter Lang
IPC分类号： A01N37/10 , A01N31/14 , A01N47/10 , A61K31/19 , A61K31/075 , A61K31/27
CPC分类号： C07C65/28
摘要： The present application relates to novel dicarboxylic acid derivatives, process for their preparation, their use for the treatment and/or prophylaxis of diseases, and their use for producing medicaments for the treatment and/or prophylaxis of diseases, especially for the treatment and/or prevention of cardiovascular disorders.
摘要翻译：本申请涉及新型二羧酸衍生物，其制备方法，其用于治疗和/或预防疾病的用途及其用于治疗和/或预防疾病，特别是用于治疗和/或预防疾病的药物的用途。预防心血管疾病。

4. 发明申请

US20130187236A1 Methods of Forming Replacement Gate Structures for Semiconductor Devices 审中-公开
标题翻译：形成半导体器件的替代栅极结构的方法
公开(公告)号：US20130187236A1
公开(公告)日：2013-07-25
申请号：US13354844
申请日：2012-01-20
申请人： Ruilong Xie , Xiuyu Cai , Robert Miller , Andreas Knorr
发明人： Ruilong Xie , Xiuyu Cai , Robert Miller , Andreas Knorr
IPC分类号： H01L27/092 , H01L21/28
CPC分类号： H01L29/4966 , H01L21/82345 , H01L21/823456 , H01L21/823842 , H01L21/82385 , H01L29/517 , H01L29/66545 , H01L29/66553
摘要： Disclosed herein are methods of forming replacement gate structures. In one example, the method includes forming a sacrificial gate structure above a semiconducting substrate, removing the sacrificial gate structure to thereby define a gate cavity, forming a layer of insulating material in the gate cavity and forming a layer of metal within the gate cavity above the layer of insulating material. The method further includes forming a sacrificial material in the gate cavity so as to cover a portion of the layer of metal and thereby define an exposed portion of the layer of metal, performing an etching process on the exposed portion of the layer of metal to thereby remove the exposed portion of the layer of metal from within the gate cavity, and, after performing the etching process, removing the sacrificial material and forming a conductive material above the remaining portion of the layer of metal.
摘要翻译：这里公开了形成替换栅极结构的方法。在一个示例中，该方法包括在半导体衬底之上形成牺牲栅极结构，去除牺牲栅极结构从而限定栅极腔，在栅极腔中形成绝缘材料层并在栅极腔内形成金属层绝缘材料层。该方法还包括在栅腔中形成牺牲材料以覆盖金属层的一部分，从而限定金属层的暴露部分，对金属层的暴露部分进行蚀刻工艺，由此从栅极腔内去除金属层的暴露部分，并且在执行蚀刻工艺之后，去除牺牲材料并在金属层的剩余部分上方形成导电材料。

5. 发明申请

US20130172372A1 RING-FUSED 4-AMINOPYRIMIDINES AND USE THEREOF AS STIMULATORS OF SOLUABLE GUANYLATE CYCLASES 失效
标题翻译：环状4-氨基亚氨基嘧啶并用作可溶性冠状动脉疾病的刺激物
公开(公告)号：US20130172372A1
公开(公告)日：2013-07-04
申请号：US13704980
申请日：2011-07-05
申请人： Markus Follmann , Johannes-Peter Stasch , Gorden Redlich , Jens Ackerstaff , Nils Griebenow , Andreas Knorr , Frank Wunder , Volkhart Min-Jian Li
发明人： Markus Follmann , Johannes-Peter Stasch , Gorden Redlich , Jens Ackerstaff , Nils Griebenow , Andreas Knorr , Frank Wunder , Volkhart Min-Jian Li
IPC分类号： A61K31/519 , C07D491/20 , A61K45/06 , C07D471/04
CPC分类号： A61K31/519 , A61K45/06 , C07D471/04 , C07D491/20 , C07D519/00
摘要： The present application relates to novel fused 4-aminopyrimidines, to processes for preparation thereof, to the use thereof, alone or in combinations, for treatment and/or prophylaxis of diseases and to the use thereof for production of medicaments for the treatment and/or prophylaxis of diseases, especially for treatment and/or prophylaxis of cardiovascular disorders.
摘要翻译：本申请涉及新型融合的4-氨基嘧啶，其制备方法，单独或组合用于治疗和/或预防疾病的用途及其用于生产用于治疗和/或治疗的药物的用途预防疾病，特别是用于治疗和/或预防心血管疾病。

6. 发明授权

US08361870B2 Self-aligned silicidation for replacement gate process 有权
标题翻译：用于替代浇口工艺的自对准硅化物
公开(公告)号：US08361870B2
公开(公告)日：2013-01-29
申请号：US12843350
申请日：2010-07-26
申请人： Indradeep Sen , Thorsten Kammler , Andreas Knorr , Akif Sultan
发明人： Indradeep Sen , Thorsten Kammler , Andreas Knorr , Akif Sultan
IPC分类号： H01L21/336
CPC分类号： H01L29/78 , H01L21/28097 , H01L21/823814 , H01L21/823864 , H01L29/4975 , H01L29/513 , H01L29/66515 , H01L29/66545 , H01L29/66606
摘要： A semiconductor device is formed with low resistivity self aligned silicide contacts with high-K/metal gates. Embodiments include postponing silicidation of a metal layer on source/drain regions in a silicon substrate until deposition of a high-K dielectric, thereby preserving the physical and morphological properties of the silicide film and improving device performance. An embodiment includes forming a replaceable gate electrode on a silicon-containing substrate, forming source/drain regions, forming a metal layer on the source/drain regions, forming an ILD over the metal layer on the substrate, removing the replaceable gate electrode, thereby forming a cavity, depositing a high-K dielectric layer in the cavity at a temperature sufficient to initiate a silicidation reaction between the metal layer and underlying silicon, and forming a metal gate electrode on the high-K dielectric layer.
摘要翻译：半导体器件形成为具有高K /金属栅极的低电阻率自对准硅化物接触。实施例包括在硅衬底的源极/漏极区域上延迟金属层的硅化物，直到沉积高K电介质，从而保持硅化物膜的物理和形态特性并提高器件性能。一个实施例包括在含硅衬底上形成可替换的栅电极，形成源极/漏极区域，在源极/漏极区域上形成金属层，在衬底上的金属层上形成ILD，去除可更换的栅电极，由此形成空腔，在足以在金属层和下层硅之间引发硅化反应的温度下在腔中沉积高K电介质层，以及在高K电介质层上形成金属栅电极。

7. 发明授权

US08324222B2 Cyclically substituted furopyrimidine derivatives and use thereof 失效
标题翻译：环状取代的呋喃嘧啶衍生物及其用途
公开(公告)号：US08324222B2
公开(公告)日：2012-12-04
申请号：US12086784
申请日：2006-12-08
申请人： Thomas Lampe , Eva-Maria Becker , Raimund Kast , Hartmut Beck , Mario Jeske , Joachim Schuhmacher , Friederike Stoll , Martina Klein , Metin Akbaba , Andreas Knorr , Johannes-Peter Stasch , Lars Bärfacker , Alexander Hillisch , Gunter Karig , Mark Meininghaus , Karl-Heinz Schlemmer , Rudolf Schohe-Loop
发明人： Thomas Lampe , Eva-Maria Becker , Raimund Kast , Hartmut Beck , Mario Jeske , Joachim Schuhmacher , Friederike Stoll , Martina Klein , Metin Akbaba , Andreas Knorr , Johannes-Peter Stasch , Lars Bärfacker , Alexander Hillisch , Gunter Karig , Mark Meininghaus , Karl-Heinz Schlemmer , Rudolf Schohe-Loop
IPC分类号： C07D491/04 , A61K31/519 , A61P9/00
CPC分类号： C07D491/04
摘要： The present application relates to novel, cyclically substituted furopyrimidine derivatives, methods for their production, their use for the treatment and/or prophylaxis of diseases and their use for the production of medicinal products for the treatment and/or prophylaxis of diseases, in particular for the treatment and/or prophylaxis of cardiovascular diseases.
摘要翻译：本申请涉及新的循环取代的呋喃嘧啶衍生物，其制备方法，其用于治疗和/或预防疾病的用途及其用于生产用于治疗和/或预防疾病的药物的用途，特别是用于治疗和/或预防心血管疾病。

8. 发明授权

US08183246B2 Acyclically substituted furopyrimidine derivatives and use thereof 有权
标题翻译：环己基取代的呋喃并嘧啶衍生物及其用途
公开(公告)号：US08183246B2
公开(公告)日：2012-05-22
申请号：US12086783
申请日：2006-12-08
申请人： Thomas Lampe , Eva-Maria Becker , Raimund Kast , Hartmut Beck , Mario Jeske , Joachim Schuhmacher , Friederike Stoll , Martina Klein , Metin Akbaba , Andreas Knorr , Johannes-Peter Stasch , Lars Bärfacker , Alexander Hillisch , Gunter Karig , Mark Meininghaus , Karl-Heinz Schlemmer , Rudolf Schohe-Loop
发明人： Thomas Lampe , Eva-Maria Becker , Raimund Kast , Hartmut Beck , Mario Jeske , Joachim Schuhmacher , Friederike Stoll , Martina Klein , Metin Akbaba , Andreas Knorr , Johannes-Peter Stasch , Lars Bärfacker , Alexander Hillisch , Gunter Karig , Mark Meininghaus , Karl-Heinz Schlemmer , Rudolf Schohe-Loop
IPC分类号： A01N43/90 , A61K31/519 , C07D491/00 , C07D495/00
CPC分类号： C07D491/04
摘要： The present application relates to novel, acyclically substituted furopyrimidine derivatives, methods for their production, their use for the treatment and/or prophylaxis of diseases and their use for the production of medicinal products for the treatment and/or prophylaxis of diseases, in particular for the treatment and/or prophylaxis of cardiovascular diseases.
摘要翻译：本申请涉及新颖的非循环取代的呋喃嘧啶衍生物，其生产方法，其用于治疗和/或预防疾病的用途及其用于生产用于治疗和/或预防疾病的药物的用途，特别是用于治疗和/或预防心血管疾病。

9. 发明申请

US20120058983A1 Adenosine A1 agonists for the treatment of glaucoma and ocular hypertension 审中-公开
标题翻译：腺苷A1激动剂治疗青光眼和高眼压症
公开(公告)号：US20120058983A1
公开(公告)日：2012-03-08
申请号：US13210889
申请日：2011-08-16
申请人： Jürgen Klar , Georges VON DEGENFELD , Hans-Georg LERCHEN , Barbara Albrecht-Küpper , Andreas KNORR , Peter SANDNER , Daniel MEIBOM
发明人： Jürgen Klar , Georges VON DEGENFELD , Hans-Georg LERCHEN , Barbara Albrecht-Küpper , Andreas KNORR , Peter SANDNER , Daniel MEIBOM
IPC分类号： A61K31/4439 , A61P27/06 , A61P27/02 , C07D417/12
CPC分类号： A61K31/4439 , A61K9/0048 , A61K9/08 , A61K38/05 , A61K45/06 , C07D413/12 , C07D417/12 , C07D417/14
摘要： The present invention relates to the use of selective adenosine A1 agonists, in particular the dicyanopyridines of formula (I), for the treatment and/or prophylaxis of glaucoma and ocular hypertension as well as the their use for the production of a medicament for the treatment and/or prophylaxis of glaucoma and ocular hypertension.
摘要翻译：本发明涉及选择性腺苷A1激动剂，特别是式（I）的二氰基吡啶用于治疗和/或预防青光眼和高眼压症及其用于生产治疗药物的用途的用途和/或预防青光眼和高眼压症。

10. 发明申请

US20100308440A1 SEMICONDUCTOR STRUCTURES AND METHODS FOR STABILIZING SILICON-COMPRISING STRUCTURES ON A SILICON OXIDE LAYER OF A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：用于稳定半导体衬底的氧化硅层上的含硅结构的半导体结构和方法
公开(公告)号：US20100308440A1
公开(公告)日：2010-12-09
申请号：US12480286
申请日：2009-06-08
申请人： Frank S. JOHNSON , Andreas KNORR
发明人： Frank S. JOHNSON , Andreas KNORR
IPC分类号： H01L21/302 , H01L29/06
CPC分类号： H01L29/66795
摘要： Methods are provided for substantially preventing and filling overetched regions in a silicon oxide layer of a semiconductor substrate. The overetched regions may be formed as a result of overetching of the silicon oxide layer during etching of an overlying silicon-comprising material layer to form a silicon-comprising structure. An etch resistant spacer may be formed after the initial or subsequent overetches. The etch resistant spacer may be formed by depositing an etch resistant material into the overetched region and etching the deposited etch resistant material to leave residual etch resistant material forming the etch resistant spacer. The etch resistant spacer may also be formed by exposing the silicon oxide layer in the overetched region to a nitrogen-supplying material to form a silicon oxynitride etch resistant spacer.
摘要翻译：提供了用于基本上防止和填充半导体衬底的氧化硅层中的过蚀刻区域的方法。在蚀刻覆盖的含硅材料层以形成含硅结构的过程中，可以形成过蚀刻区域作为氧化硅层的过蚀刻的结果。可以在初始或随后的过程之后形成耐蚀刻间隔物。耐蚀刻间隔物可以通过将抗蚀刻材料沉积到过蚀刻区域中并蚀刻沉积的耐蚀刻材料以形成形成耐蚀刻间隔物的残留耐蚀刻材料来形成。也可以通过将过蚀区域中的氧化硅层暴露于氮供给材料以形成氮氧化硅耐腐蚀间隔物来形成耐蚀刻间隔物。

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