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1. 发明授权

US06211038B1 Semiconductor device, and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06211038B1
公开(公告)日：2001-04-03
申请号：US09047325
申请日：1998-03-25
申请人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Yukiko Iwasaki
IPC分类号： H01L2176
CPC分类号： H01L21/76259
摘要： A method for manufacturing a thin-film crystalline solar cell includes the steps of (i) forming a porous layer including a large number of fine pores in a surface portion of a crystalline substrate, (ii) transforming a part of the porous layer including the surface thereof into a smooth layer which does not include fine pores by providing the porous layer with excitation energy, and (iii) peeling the smooth layer from the substrate. The excitation energy is provided, for example, by performing heat treatment in a hydrogen atmosphere, irradiating with light having a wavelength equal to or less than 600 nm, or irradiating with an electron beam. It is thereby possible to form a thin-film crystalline semiconductor layer on an inexpensive and flexible substrate by simple processes.
摘要翻译：制造薄膜结晶太阳能电池的方法包括以下步骤：（i）在结晶基材的表面部分形成包含大量细孔的多孔层，（ii）将包含通过向多孔层提供激发能量而将其表面形成不包括细孔的光滑层，以及（iii）从基板剥离光滑层。励磁能量例如通过在氢气氛中进行热处理，用波长等于或小于600nm的光照射或用电子束照射来提供。从而可以通过简单的工艺在便宜且柔性的基板上形成薄膜晶体半导体层。

2. 发明授权

US06258698B1 Process for producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US06258698B1
公开(公告)日：2001-07-10
申请号：US09046600
申请日：1998-03-24
申请人： Yukiko Iwasaki , Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
发明人： Yukiko Iwasaki , Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
IPC分类号： H01L2130
CPC分类号： H01L21/2007
摘要： A process for producing a semiconductor substrate is provided which comprises a first step of anodizing a surface of a first substrate to form a porous layer on the surface, a second step of simultaneously forming a semiconductor layer on the surface of the porous layer and a semiconductor layer on a surface of the first substrate on its side opposite to the porous layer side, a third step of bonding the surface of the semiconductor layer formed on the surface of the porous layer to a surface of a second substrate, and a fourth step of separating the first substrate and the second substrate at the part of the porous layer to transfer to the second substrate the semiconductor layer formed on the surface of the porous layer, thereby providing the semiconductor layer on the surface of the second substrate. This makes it possible to produce semiconductor substrates at a low cost while making good use of expensive substrate materials.
摘要翻译：提供了一种制造半导体衬底的方法，其包括：第一步骤，阳极氧化第一衬底的表面以在表面上形成多孔层;第二步骤，在多孔层的表面上同时形成半导体层，半导体在与第一基板的与多孔层侧相反的一侧的表面上的第三步骤，将形成在多孔层的表面上的半导体层的表面接合到第二基板的表面上的第三步骤，在所述多孔层的一部分处分离所述第一基板和所述第二基板，以将所述半导体层转移到所述第二基板，所述半导体层形成在所述多孔层的表面上，从而在所述第二基板的表面上提供所述半导体层。这使得可以以低成本制造半导体衬底，同时充分利用昂贵的衬底材料。

3. 发明授权

US06452091B1 Method of producing thin-film single-crystal device, solar cell module and method of producing the same 失效
标题翻译：薄膜单晶器件的制造方法，太阳能电池模块及其制造方法
公开(公告)号：US06452091B1
公开(公告)日：2002-09-17
申请号：US09614548
申请日：2000-07-12
申请人： Katsumi Nakagawa , Takao Yonehara , Yasuyoshi Takai , Kiyofumi Sakaguchi , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Takao Yonehara , Yasuyoshi Takai , Kiyofumi Sakaguchi , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： H01L2102
CPC分类号： H01L21/76259 , H01L21/304 , Y10T156/1002 , Y10T156/1028 , Y10T156/1041 , Y10T156/1048 , Y10T156/1049
摘要： The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to cleave are different from the front line direction of the peeled single-crystal. This single-crystal is used in a solar cell and a drive circuit member of an image display element. A method is provided which prevents a decrease in quality and yield of a single crystal layer when it is peeled from a substrate. A flexible solar cell module having a thin film single-crystal layer is made so that its flexing direction is different from the single-crystal's cleaving direction. Thus, a thin-film single-crystal solar cell module having excellent durability and reliability due to a lack of defect or cracking during production and use, and a method for producing the same, is provided.
摘要翻译：进行从基板剥离薄膜单晶，使得由单晶易于劈开的平面制成的单晶面上的直线的方向不同于剥离的单晶。该单晶体用于太阳能电池和图像显示元件的驱动电路部件。提供了当从基板剥离时防止单晶层的质量和产量降低的方法。制成具有薄膜单晶层的柔性太阳能电池模块，使其挠曲方向与单晶的分裂方向不同。因此，提供了由于在生产和使用期间缺少缺陷或破裂而具有优异的耐久性和可靠性的薄膜单晶太阳能电池组件及其制造方法。

4. 发明授权

US06756289B1 Method of producing semiconductor member and method of producing solar cell 失效
标题翻译：制造半导体元件的方法和太阳能电池的制造方法
公开(公告)号：US06756289B1
公开(公告)日：2004-06-29
申请号：US09638398
申请日：2000-08-15
申请人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
发明人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
IPC分类号： H01L2146
CPC分类号： H01L21/02032 , C30B19/12 , H01L21/02381 , H01L21/02513 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02625 , H01L21/02628 , H01L21/2007 , H01L21/3063 , H01L21/76251 , H01L29/66772 , H01L29/78654 , H01L31/068 , H01L31/0687 , H01L31/1804 , H01L33/0062 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S438/977
摘要： To accomplish both of higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.
摘要翻译：为了在半导体部件中实现更高的晶体性能和更低的成本，并且以低成本制造具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件，（a）形成（b）在还原性气氛下在高温下将多孔层浸入其中溶解要生长的半导体层形成元素的熔融溶液中，以生长晶体半导体层在多孔层的表面上，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。

5. 发明授权

US06602767B2 Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery 失效
标题翻译：多孔层的转印方法，半导体装置的制造方法以及制造太阳能电池的方法
公开(公告)号：US06602767B2
公开(公告)日：2003-08-05
申请号：US09769329
申请日：2001-01-26
申请人： Shoji Nishida , Katsumi Nakagawa , Takao Yonehara , Kiyofumi Sakaguchi
发明人： Shoji Nishida , Katsumi Nakagawa , Takao Yonehara , Kiyofumi Sakaguchi
IPC分类号： H01L2120
CPC分类号： H01L21/02032 , H01L21/76259 , H01L31/1804 , H01L31/182 , H01L31/1844 , H01L31/1852 , H01L31/1892 , Y02E10/544 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method for transferring a porous layer includes forming a porous layer on one side of a crystalline silicon member by anodization, fixing a supporting substrate onto the surface of the porous layer, and applying force to any one of the supporting substrate and the porous layer, whereby at least part of the porous layer is cleaved from the crystalline silicon member and is transferred onto the supporting substrate. The crystalline silicon member can be recycled and this method is suitable for mass production of semiconductor devices or solar batteries at low cost.
摘要翻译：用于转移多孔层的方法包括通过阳极氧化在晶体硅构件的一侧上形成多孔层，将支撑衬底固定在多孔层的表面上，并向支撑衬底和多孔层中的任何一个施加力，由此多孔层的至少一部分从结晶硅构件上被切割并转移到支撑衬底上。结晶硅元件可以循环利用，这种方法适合以低成本批量生产半导体器件或太阳能电池。

6. 发明授权

US06190937B1 Method of producing semiconductor member and method of producing solar cell 失效
标题翻译：制造半导体元件的方法和太阳能电池的制造方法
公开(公告)号：US06190937B1
公开(公告)日：2001-02-20
申请号：US08999132
申请日：1997-12-29
申请人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
发明人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
IPC分类号： H01L2176
CPC分类号： H01L21/02032 , C30B19/12 , H01L21/02381 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L21/02625 , H01L21/02628 , H01L21/02664 , H01L21/2007 , H01L21/3063 , H01L21/76251 , H01L29/66772 , H01L29/78654 , H01L31/068 , H01L31/0687 , H01L31/1804 , H01L33/0062 , H01L2221/68368 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S438/977
摘要： To accomplish both higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.
摘要翻译：为了在半导体元件中实现更高的晶体性能和更低的成本，并且以低成本生产具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件：（a）形成多孔（b）将多孔层浸渍在其中溶解有用于形成要生长的半导体层的元素的熔融溶液中，在高温还原气氛下，将晶体半导体层生长在多孔层的表面，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。

7. 发明授权

US06605518B1 Method of separating composite member and process for producing thin film 失效
标题翻译：分离复合材料的方法和制备薄膜的方法
公开(公告)号：US06605518B1
公开(公告)日：2003-08-12
申请号：US09558657
申请日：2000-04-26
申请人： Kazuaki Ohmi , Katsumi Nakagawa , Nobuhiko Sato , Kiyofumi Sakaguchi , Kazutaka Yanagita , Takao Yonehara
发明人： Kazuaki Ohmi , Katsumi Nakagawa , Nobuhiko Sato , Kiyofumi Sakaguchi , Kazutaka Yanagita , Takao Yonehara
IPC分类号： H01L2146
CPC分类号： H01L21/76259 , Y10S438/96
摘要： To cause a crack at a fixed position in a separation layer, a method of separating a composite member includes the steps of forming a separation layer inside a composite member, forming inside the separation layer a stress riser layer in which an in-plane stress has concentratedly been produced to an extent that does not cause separation by the in-plane stress, and enlarging the in-plane stress to cause a crack in the stress riser layer, thereby separating the composite member.
摘要翻译：为了在分离层中的固定位置产生裂纹，分离复合构件的方法包括在复合构件内部形成分离层的步骤，在分离层的内部形成面内应力的应力提升层集中制造到不会由于面内应力而产生分离，扩大面内应力，引起应力提升层的裂纹，从而分离复合部件。

8. 发明授权

US07077901B2 Process for producing single crystal silicon wafers 失效
标题翻译：制造单晶硅片的工艺
公开(公告)号：US07077901B2
公开(公告)日：2006-07-18
申请号：US10402214
申请日：2003-03-31
申请人： Katsumi Nakagawa , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida
发明人： Katsumi Nakagawa , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida
IPC分类号： C30B19/02
CPC分类号： C30B19/12 , C30B19/02 , C30B29/06
摘要： A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.
摘要翻译：一种制造单晶硅晶片的方法，包括以下步骤：在单晶硅衬底上形成多孔层，该单晶硅衬底包含平均浓度为28％硅同位素的硅的浓度小于92.5％的硅; 将其质量数为28的硅同位素的质量数大于98％的起始硅溶解在用于液相外延的熔体中，直到所述起始硅在所述熔体中在还原气氛保持在高温下变为过饱和状态为止温度：将所述单晶硅衬底浸入所述熔体中以在所述单晶硅衬底的所述多孔层的表面上生长单晶硅层; 以及从所述多孔层的一部分剥离所述单晶硅层。

9. 发明申请

US20050124139A1 Process of producing multicrystalline silicon substrate and solar cell 有权
标题翻译：生产多晶硅衬底和太阳能电池的工艺
公开(公告)号：US20050124139A1
公开(公告)日：2005-06-09
申请号：US10505979
申请日：2003-02-21
申请人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： C01B33/02 , C30B11/00 , C30B29/06 , C30B33/00 , H01L21/208 , H01L31/18 , H01L21/301 , H01L21/46 , H01L21/78
CPC分类号： C30B11/00 , C30B29/06 , C30B33/00 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.
摘要翻译：提供了具有作为太阳能电池基板的优异特性的多晶硅基板的制造方法。切割通过定向凝固10制成的多晶硅锭，使得多晶硅基板13的主表面14的法线基本上垂直于通过定向凝固10制成的多晶硅锭的晶粒11的纵向方向。

10. 发明授权

US06384313B2 Solar cell module and method of producing the same 失效
标题翻译：太阳能电池组件及其制造方法
公开(公告)号：US06384313B2
公开(公告)日：2002-05-07
申请号：US09790589
申请日：2001-02-23
申请人： Katsumi Nakagawa , Shoji Nishida , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Shoji Nishida , Yukiko Iwasaki
IPC分类号： H01L2500
CPC分类号： H01L31/042 , H01L31/0443 , H01L31/0504 , Y02E10/50
摘要： A solar cell module comprises a plurality of unit cells connected in series, each of the unit cells comprising in this order an electrode, a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type. The electrode has a region not covered with the first semiconductor layer. The second semiconductor layer has a main region and a subregion which are separated by a groove. The main region of the second semiconductor layer in one unit cell is electrically connected to the region of the electrode not covered with the first semiconductor layer in another unit cell adjacent to the one unit cell. The region of the electrode not covered with the first semiconductor layer in the one unit cell is electrically connected to the subregion of the second semiconductor layer in the another unit cell. With this structure it is possible to simplify the formation of a bypass diode invention therefore provide solar cell module with high reliability at a low cost.
摘要翻译：太阳能电池模块包括串联连接的多个单元电池，每个单电池依次包括电极，具有第一导电类型的第一半导体层和具有第二导电类型的第二半导体层。电极具有未被第一半导体层覆盖的区域。第二半导体层具有由沟槽分隔开的主区域和子区域。一个单元电池中的第二半导体层的主要区域与在一个单位电池相邻的另一单元电池中未被第一半导体层覆盖的电极的区域电连接。在一个单元电池中没有被第一半导体层覆盖的电极的区域电连接到另一个晶胞中的第二半导体层的子区域。利用这种结构，可以简化旁路二极管发明的形成，因此以低成本提供高可靠性的太阳能电池模块。

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