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1. 发明授权

US06211038B1 Semiconductor device, and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06211038B1
公开(公告)日：2001-04-03
申请号：US09047325
申请日：1998-03-25
申请人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Yukiko Iwasaki
IPC分类号： H01L2176
CPC分类号： H01L21/76259
摘要： A method for manufacturing a thin-film crystalline solar cell includes the steps of (i) forming a porous layer including a large number of fine pores in a surface portion of a crystalline substrate, (ii) transforming a part of the porous layer including the surface thereof into a smooth layer which does not include fine pores by providing the porous layer with excitation energy, and (iii) peeling the smooth layer from the substrate. The excitation energy is provided, for example, by performing heat treatment in a hydrogen atmosphere, irradiating with light having a wavelength equal to or less than 600 nm, or irradiating with an electron beam. It is thereby possible to form a thin-film crystalline semiconductor layer on an inexpensive and flexible substrate by simple processes.
摘要翻译：制造薄膜结晶太阳能电池的方法包括以下步骤：（i）在结晶基材的表面部分形成包含大量细孔的多孔层，（ii）将包含通过向多孔层提供激发能量而将其表面形成不包括细孔的光滑层，以及（iii）从基板剥离光滑层。励磁能量例如通过在氢气氛中进行热处理，用波长等于或小于600nm的光照射或用电子束照射来提供。从而可以通过简单的工艺在便宜且柔性的基板上形成薄膜晶体半导体层。

2. 发明授权

US06258698B1 Process for producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US06258698B1
公开(公告)日：2001-07-10
申请号：US09046600
申请日：1998-03-24
申请人： Yukiko Iwasaki , Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
发明人： Yukiko Iwasaki , Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
IPC分类号： H01L2130
CPC分类号： H01L21/2007
摘要： A process for producing a semiconductor substrate is provided which comprises a first step of anodizing a surface of a first substrate to form a porous layer on the surface, a second step of simultaneously forming a semiconductor layer on the surface of the porous layer and a semiconductor layer on a surface of the first substrate on its side opposite to the porous layer side, a third step of bonding the surface of the semiconductor layer formed on the surface of the porous layer to a surface of a second substrate, and a fourth step of separating the first substrate and the second substrate at the part of the porous layer to transfer to the second substrate the semiconductor layer formed on the surface of the porous layer, thereby providing the semiconductor layer on the surface of the second substrate. This makes it possible to produce semiconductor substrates at a low cost while making good use of expensive substrate materials.
摘要翻译：提供了一种制造半导体衬底的方法，其包括：第一步骤，阳极氧化第一衬底的表面以在表面上形成多孔层;第二步骤，在多孔层的表面上同时形成半导体层，半导体在与第一基板的与多孔层侧相反的一侧的表面上的第三步骤，将形成在多孔层的表面上的半导体层的表面接合到第二基板的表面上的第三步骤，在所述多孔层的一部分处分离所述第一基板和所述第二基板，以将所述半导体层转移到所述第二基板，所述半导体层形成在所述多孔层的表面上，从而在所述第二基板的表面上提供所述半导体层。这使得可以以低成本制造半导体衬底，同时充分利用昂贵的衬底材料。

3. 发明授权

US06566235B2 Process for producing semiconductor member, and process for producing solar cell 失效
标题翻译：半导体部件的制造方法以及太阳能电池的制造方法
公开(公告)号：US06566235B2
公开(公告)日：2003-05-20
申请号：US09819680
申请日：2001-03-29
申请人： Shoji Nishida , Takao Yonehara , Kiyofumi Sakaguchi , Noritaka Ukiyo , Yukiko Iwasaki
发明人： Shoji Nishida , Takao Yonehara , Kiyofumi Sakaguchi , Noritaka Ukiyo , Yukiko Iwasaki
IPC分类号： H01L2146
CPC分类号： H01L21/02032 , H01L21/3083 , H01L21/76259 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A process for producing a semiconductor member, comprising a first step of forming a porous layer by making porous a first member at its surface portion, leaving some region or regions thereof not made porous; a second step of bonding a semiconductor layer formed on the porous layer and on the first-member surface left not made porous, to a second member to form a bonded structure; and a third step of separating the bonded structure at the part of the porous layer. The first member is made porous leaving some region or regions thereof not made porous so that the porous layer does not cause any separation at the part of the porous layer in the first and second steps. This process can make the semiconductor layer unseparable from the single-crystal silicon member before the separation for transferring the semiconductor layer to the support member side, without setting the anodizing conditions strictly. Also disclosed is a process for producing a solar cell by the above process.
摘要翻译：一种半导体部件的制造方法，其特征在于，包括：通过在其表面部分形成多孔第一部件而形成多孔层的第一工序，使一部分区域或多个区域形成多孔; 将形成在所述多孔层上的半导体层和未形成多孔的所述第一构件表面接合到第二构件以形成接合结构的第二步骤; 以及在多孔层的一部分分离结合结构的第三步骤。第一个构件是多孔的，留下一些不是多孔的区域或区域，使得多孔层在第一和第二步骤中在多孔层的部分处不引起任何分离。该方法可以使半导体层与单个层不可分离在将半导体层转移到支撑构件侧的分离之前的晶体硅构件，而不严格地设定阳极氧化条件。还公开了通过上述方法制造太阳能电池的方法。

4. 发明授权

US06448155B1 Production method of semiconductor base material and production method of solar cell 失效
标题翻译：半导体基材的生产方法和太阳能电池的生产方法
公开(公告)号：US06448155B1
公开(公告)日：2002-09-10
申请号：US09592559
申请日：2000-06-12
申请人： Yukiko Iwasaki , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Noritaka Ukiyo
发明人： Yukiko Iwasaki , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Noritaka Ukiyo
IPC分类号： H01L21301
CPC分类号： H01L21/6835 , H01L21/304 , H01L21/6836 , H01L21/76259 , H01L2221/68327 , H01L2221/68359 , H01L2221/68368
摘要： When a semiconductor layer formed via a separation layer on a substrate is supported by a support member and a pulling force is then exerted on the support member to mechanically break the separation layer to thereby form a thin-film semiconductor, the substrate is held by vacuum and/or electrostatic attachment and separation of the thin-film epitaxial layer is initiated from an area other than an edge of the substrate. This provides a method capable of obtaining the thin-film epitaxial layer with excellent characteristics in a good yield and permitting repetitive uses of the substrate, without inducing lifting of the substrate due to the separation force overcoming the attaching force of the substrate when producing a semiconductor base material and a solar cell.
摘要翻译：当通过基板上的分离层形成的半导体层被支撑构件支撑并且然后将拉力施加在支撑构件上以机械地破坏分离层从而形成薄膜半导体时，基板被真空保持和/或薄膜外延层的静电附着和分离从基板边缘以外的区域开始。这提供了一种能够以良好的产率获得具有优异特性的薄膜外延层的方法，并且允许基板的重复使用，而不会在产生半导体时由于克服基板的附着力而产生的分离力而引起基板的提升基材和太阳能电池。

5. 发明授权

US06452091B1 Method of producing thin-film single-crystal device, solar cell module and method of producing the same 失效
标题翻译：薄膜单晶器件的制造方法，太阳能电池模块及其制造方法
公开(公告)号：US06452091B1
公开(公告)日：2002-09-17
申请号：US09614548
申请日：2000-07-12
申请人： Katsumi Nakagawa , Takao Yonehara , Yasuyoshi Takai , Kiyofumi Sakaguchi , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Takao Yonehara , Yasuyoshi Takai , Kiyofumi Sakaguchi , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： H01L2102
CPC分类号： H01L21/76259 , H01L21/304 , Y10T156/1002 , Y10T156/1028 , Y10T156/1041 , Y10T156/1048 , Y10T156/1049
摘要： The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to cleave are different from the front line direction of the peeled single-crystal. This single-crystal is used in a solar cell and a drive circuit member of an image display element. A method is provided which prevents a decrease in quality and yield of a single crystal layer when it is peeled from a substrate. A flexible solar cell module having a thin film single-crystal layer is made so that its flexing direction is different from the single-crystal's cleaving direction. Thus, a thin-film single-crystal solar cell module having excellent durability and reliability due to a lack of defect or cracking during production and use, and a method for producing the same, is provided.
摘要翻译：进行从基板剥离薄膜单晶，使得由单晶易于劈开的平面制成的单晶面上的直线的方向不同于剥离的单晶。该单晶体用于太阳能电池和图像显示元件的驱动电路部件。提供了当从基板剥离时防止单晶层的质量和产量降低的方法。制成具有薄膜单晶层的柔性太阳能电池模块，使其挠曲方向与单晶的分裂方向不同。因此，提供了由于在生产和使用期间缺少缺陷或破裂而具有优异的耐久性和可靠性的薄膜单晶太阳能电池组件及其制造方法。

6. 发明授权

US06818104B2 Anodizing apparatus 失效
标题翻译：阳极氧化装置
公开(公告)号：US06818104B2
公开(公告)日：2004-11-16
申请号：US10669002
申请日：2003-09-24
申请人： Yukiko Iwasaki , Shoji Nishida , Kiyofumi Sakaguchi , Noritaka Ukiyo
发明人： Yukiko Iwasaki , Shoji Nishida , Kiyofumi Sakaguchi , Noritaka Ukiyo
IPC分类号： C25D1700
CPC分类号： H01L21/02032 , C25D11/32 , C25D17/10 , H01L21/0203 , H01L21/76259 , H01L29/0657 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363
摘要： In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).
摘要翻译：在利用薄膜晶体半导体层制造半导体部件和太阳能电池的方法中，该方法包括以下步骤：（1）阳极氧化第一基板的表面以至少形成多孔层（2）至少在多孔层的表面上形成半导体层，（3）在其周边区域去除半导体层，（4）将第二基板接合到半导体层的表面，（5）在所述多孔层的所述部分处从所述第一基板分离所述半导体层，以及（6）分离后处理所述第一基板的表面并重复上述步骤（1）至（5）。

7. 发明授权

US06664169B1 Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus 失效
标题翻译：半导体部件的制造方法，太阳能电池的制造方法以及阳极氧化装置
公开(公告)号：US06664169B1
公开(公告)日：2003-12-16
申请号：US09586887
申请日：2000-06-05
申请人： Yukiko Iwasaki , Shoji Nishida , Kiyofumi Sakaguchi , Noritaka Ukiyo
发明人： Yukiko Iwasaki , Shoji Nishida , Kiyofumi Sakaguchi , Noritaka Ukiyo
IPC分类号： H01L2176
CPC分类号： H01L21/02032 , C25D11/32 , C25D17/10 , H01L21/0203 , H01L21/76259 , H01L29/0657 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363
摘要： In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).
摘要翻译：在利用薄膜晶体半导体层制造半导体部件和太阳能电池的方法中，该方法包括以下步骤：（1）阳极氧化第一基板的表面以至少形成多孔层（2）至少在多孔层的表面上形成半导体层，（3）在其周边区域去除半导体层，（4）将第二基板接合到半导体层的表面，（5）在所述多孔层的所述部分处从所述第一基板分离所述半导体层，以及（6）分离后处理所述第一基板的表面并重复上述步骤（1）至（5）。

8. 发明授权

US07175706B2 Process of producing multicrystalline silicon substrate and solar cell 有权
标题翻译：生产多晶硅衬底和太阳能电池的工艺
公开(公告)号：US07175706B2
公开(公告)日：2007-02-13
申请号：US10505979
申请日：2003-02-21
申请人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： C30B11/14
CPC分类号： C30B11/00 , C30B29/06 , C30B33/00 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.
摘要翻译：提供了具有作为太阳能电池基板的优异特性的多晶硅基板的制造方法。切割通过定向凝固10制成的多晶硅锭，使得多晶硅基板13的主表面14的法线基本上垂直于通过定向凝固10制成的多晶硅锭的晶粒11的纵向方向。

9. 发明授权

US06682990B1 Separation method of semiconductor layer and production method of solar cell 失效
标题翻译：半导体层的分离方法和太阳能电池的制造方法
公开(公告)号：US06682990B1
公开(公告)日：2004-01-27
申请号：US09656014
申请日：2000-09-07
申请人： Masaaki Iwane , Katsumi Nakagawa , Makoto Iwakami , Shoji Nishida , Noritaka Ukiyo , Yukiko Iwasaki , Masaki Mizutani
发明人： Masaaki Iwane , Katsumi Nakagawa , Makoto Iwakami , Shoji Nishida , Noritaka Ukiyo , Yukiko Iwasaki , Masaki Mizutani
IPC分类号： H01L2130
CPC分类号： H01L31/1804 , H01L21/67207 , H01L21/6835 , H01L21/76259 , H01L31/0504 , H01L31/1892 , H01L2221/68368 , Y02E10/547 , Y02P70/521 , Y10S438/96 , Y10S438/977
摘要： The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face of the semiconductor substrate at the side opposite to the separation layer are held by utilizing an ice layer, whereby it is unnecessary to use an adhesive as holding means and at the same time it is possible to easily and uniformly separate them.
摘要翻译：根据本发明的半导体层的分离方法包括在形成在其间的分离层处分离半导体层和半导体衬底，其中半导体层在与分离层相对的一侧的表面和/或通过利用冰层保持在与分离层相对的一侧的半导体衬底，由此不需要使用粘合剂作为保持装置，并且同时可以容易且均匀地分离它们。

10. 发明授权

US06248948B1 Solar cell module and method of producing the same 失效
标题翻译：太阳能电池组件及其制造方法
公开(公告)号：US06248948B1
公开(公告)日：2001-06-19
申请号：US09310953
申请日：1999-05-13
申请人： Katsumi Nakagawa , Shoji Nishida , Yukiko Iwasaki
发明人： Katsumi Nakagawa , Shoji Nishida , Yukiko Iwasaki
IPC分类号： H01L2500
CPC分类号： H01L31/042 , H01L31/0443 , H01L31/0504 , Y02E10/50
摘要： A solar cell module comprises a plurality of unit cells connected in series, each of the unit cells comprising in this order an electrode, a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type. The electrode has a region not covered with the first semiconductor layer. The second semiconductor layer has a main region and a subregion which are separated by a groove. The main region of the second semiconductor layer in one unit cell is electrically connected to the region of the electrode not covered with the first semiconductor layer in another unit cell adjacent to the one unit cell. The region of the electrode not covered with the first semiconductor layer in the one unit cell is electrically connected to the subregion of the second semiconductor layer in the another unit cell. With this structure, it is possible to simplify the formation of a bypass diode and therefore provide a solar cell module with high reliability at a low cost.
摘要翻译：太阳能电池模块包括串联连接的多个单元电池，每个单电池依次包括电极，具有第一导电类型的第一半导体层和具有第二导电类型的第二半导体层。电极具有未被第一半导体层覆盖的区域。第二半导体层具有由沟槽分隔开的主区域和子区域。一个单元电池中的第二半导体层的主要区域与在一个单位电池相邻的另一单元电池中未被第一半导体层覆盖的电极的区域电连接。在一个单元电池中没有被第一半导体层覆盖的电极的区域电连接到另一个晶胞中的第二半导体层的子区域。利用这种结构，可以简化旁路二极管的形成，从而以低成本提供高可靠性的太阳能电池模块。

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