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1. 发明申请

US20090252939A1 Wafer structures and wafer bonding methods 失效
标题翻译：晶圆结构和晶圆接合方法
公开(公告)号：US20090252939A1
公开(公告)日：2009-10-08
申请号：US12384617
申请日：2009-04-07
申请人： Sang-Joon Park , Kyoung-Kook kim , Yu-Sik Kim
发明人： Sang-Joon Park , Kyoung-Kook kim , Yu-Sik Kim
IPC分类号： B32B7/02 , B32B37/00 , B32B38/00 , B32B38/10 , B32B38/16
CPC分类号： H01L21/187 , B32B38/0008 , B32B2309/02 , B32B2309/027 , B32B2309/12 , B32B2310/14 , B32B2457/14 , Y10T156/1089 , Y10T428/24942
摘要： Wafer structures and wafer bonding methods are provided. In some embodiments, a wafer bonding method includes providing a conductive wafer and a plurality of insulating wafers, the conductive wafer being larger than the insulating wafers; performing a pre-treatment operation on the conductive wafer, the insulating wafers, or both; and directly bonding the insulating wafers to the conductive wafer.
摘要翻译：提供了晶圆结构和晶圆接合方法。在一些实施例中，晶片接合方法包括提供导电晶片和多个绝缘晶片，导电晶片大于绝缘晶片; 在导电晶片，绝缘晶片或两者上执行预处理操作; 并将绝缘晶片直接接合到导电晶片。

2. 发明申请

US20120040479A1 LIGHT EMITTING ELEMENT, A LIGHT EMITTING DEVICE, A METHOD OF MANUFACTURING A LIGHT EMITTING ELEMENT AND A METHOD OF MANUFACTURING A LIGHT EMITTING DEVICE 有权
标题翻译：发光元件，发光装置，制造发光元件的方法和制造发光装置的方法
公开(公告)号：US20120040479A1
公开(公告)日：2012-02-16
申请号：US13279790
申请日：2011-10-24
申请人： Yu-Sik KIM , Sang-Joon Park
发明人： Yu-Sik KIM , Sang-Joon Park
IPC分类号： H01L33/48 , H01L33/32
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/483 , H01L2224/48091 , H01L2924/01021 , H01L2924/01066 , H01L2924/01067 , H01L2924/10253 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light-emitting element, a method of manufacturing the light-emitting element, a light-emitting device, and a method of manufacturing the light-emitting device. A method of manufacturing a light-emitting element includes: forming a first conductive layer of a first conductive type, a light-emitting layer, and a second conductive layer of a second conductive type on at least one first substrate, forming an ohmic layer on the second conductive layer and bonding the at least one first substrate to a second substrate. The second substrate being larger than the first substrate. The method further includes etching portions of the ohmic layer, the second conductive layer, and the light-emitting layer to expose a portion of the first conductive layer.
摘要翻译：本发明提供一种发光元件，发光元件的制造方法，发光元件及其制造方法。一种制造发光元件的方法包括：在至少一个第一基板上形成第一导电类型的第一导电层，第二导电类型的第二导电层和形成欧姆层的第二导电层所述第二导电层并将所述至少一个第一衬底结合到第二衬底。第二基板大于第一基板。该方法还包括蚀刻欧姆层，第二导电层和发光层的部分以暴露第一导电层的一部分。

3. 发明授权

US08338204B2 Light emitting element, a light emitting device, a method of manufacturing a light emitting element and a method of manufacturing a light emitting device 有权
标题翻译：发光元件，发光元件，发光元件的制造方法以及发光元件的制造方法
公开(公告)号：US08338204B2
公开(公告)日：2012-12-25
申请号：US13279790
申请日：2011-10-24
申请人： Yu-Sik Kim , Sang-Joon Park
发明人： Yu-Sik Kim , Sang-Joon Park
IPC分类号： H01L21/20
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/483 , H01L2224/48091 , H01L2924/01021 , H01L2924/01066 , H01L2924/01067 , H01L2924/10253 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light-emitting element, a method of manufacturing the light-emitting element, a light-emitting device, and a method of manufacturing the light-emitting device. A method of manufacturing a light-emitting element includes: forming a first conductive layer of a first conductive type, a light-emitting layer, and a second conductive layer of a second conductive type on at least one first substrate, forming an ohmic layer on the second conductive layer and bonding the at least one first substrate to a second substrate. The second substrate being larger than the first substrate. The method further includes etching portions of the ohmic layer, the second conductive layer, and the light-emitting layer to expose a portion of the first conductive layer.
摘要翻译：本发明提供一种发光元件，发光元件的制造方法，发光元件及其制造方法。一种制造发光元件的方法包括：在至少一个第一基板上形成第一导电类型的第一导电层，第二导电类型的第二导电层和形成欧姆层的第二导电层所述第二导电层并将所述至少一个第一衬底结合到第二衬底。第二基板大于第一基板。该方法还包括蚀刻欧姆层，第二导电层和发光层的部分以暴露第一导电层的一部分。

4. 发明授权

US08268699B2 Wafer structures and wafer bonding methods 失效
标题翻译：晶圆结构和晶圆接合方法
公开(公告)号：US08268699B2
公开(公告)日：2012-09-18
申请号：US12384617
申请日：2009-04-07
申请人： Sang-Joon Park , Kyoung-Kook Kim , Yu-Sik Kim
发明人： Sang-Joon Park , Kyoung-Kook Kim , Yu-Sik Kim
IPC分类号： H01L21/30
CPC分类号： H01L21/187 , B32B38/0008 , B32B2309/02 , B32B2309/027 , B32B2309/12 , B32B2310/14 , B32B2457/14 , Y10T156/1089 , Y10T428/24942
摘要： Wafer structures and wafer bonding methods are provided. In some embodiments, a wafer bonding method includes providing a conductive wafer and a plurality of insulating wafers, the conductive wafer being larger than the insulating wafers; performing a pre-treatment operation on the conductive wafer, the insulating wafers, or both; and directly bonding the insulating wafers to the conductive wafer.
摘要翻译：提供了晶圆结构和晶圆接合方法。在一些实施例中，晶片接合方法包括提供导电晶片和多个绝缘晶片，导电晶片大于绝缘晶片; 在导电晶片，绝缘晶片或两者上执行预处理操作; 并将绝缘晶片直接接合到导电晶片。

5. 发明授权

US08537301B2 Method of fabricating bottom chassis, bottom chassis fabricated by the method of fabricating the same, method of fabricating liquid crystal display, and liquid crystal display fabricated by the method of fabricating the same 有权
标题翻译：制造底架的方法，通过其制造方法制造的底架，制造液晶显示器的方法和通过其制造方法制造的液晶显示器
公开(公告)号：US08537301B2
公开(公告)日：2013-09-17
申请号：US12897093
申请日：2010-10-04
申请人： Sang-Joon Park , Tae-Seok Kim , Tae-Seok Jang
发明人： Sang-Joon Park , Tae-Seok Kim , Tae-Seok Jang
IPC分类号： G02F1/1333
CPC分类号： B21K23/00 , H05K5/02
摘要： A method of fabricating a bottom chassis is provided. The method of fabricating the bottom chassis includes, for example, forming a bottom chassis using a steel plate having a thickness in the range of 0.5 mm to 0.9 mm, the steel plate having a stack structure including an inner layer containing 0.001 to 0.1 weight percent (wt. %) carbon (C), 0.002 to 0.05 wt. % silicon (Si), 0.28 to 2.0 wt. % manganese (Mn), balance iron (Fe), and other impurities, an electro-galvanized layer formed on the inner layer, and a polymer chromium (Cr)-free contamination resistant layer formed on the electro-galvanized layer, and performing a burring process and a tapping process on the bottom chassis to form a burring part to receive a bolt for an engagement.
摘要翻译：提供一种制造底盘的方法。制造底架的方法包括例如使用厚度在0.5mm至0.9mm范围内的钢板形成底架，该钢板具有包括含有0.001至0.1重量％的内层的堆叠结构（重量％）碳（C），0.002〜0.05重量％％硅（Si），0.28〜2.0重量％锰（Mn），余量铁（Fe）等杂质，内层形成的电镀锌层，形成在电镀层上的聚合铬（Cr）翻边过程和底部底盘上的攻丝过程，以形成接合用于接合的螺栓的翻边部分。

6. 发明授权

US08532723B2 Portable communication device and slide-type cradling apparatus thereof 有权
标题翻译：便携式通信装置及其滑动式吊装装置
公开(公告)号：US08532723B2
公开(公告)日：2013-09-10
申请号：US12692723
申请日：2010-01-25
申请人： Sung-Ho Ahn , Sang-Joon Park , Sang-Min Hyun , Han-Gil Song
发明人： Sung-Ho Ahn , Sang-Joon Park , Sang-Min Hyun , Han-Gil Song
IPC分类号： H04M1/38
CPC分类号： H04M1/0247 , G06F1/1616 , G06F1/1641 , G06F1/1643 , G06F1/1681 , H04M1/0216 , H04M1/0237 , H04M2250/16
摘要： A portable communication device that cradles a first and a second display units at a same angle, and a slide-type cradling apparatus thereof are disclosed. The portable communication device includes: a first housing; a second housing including a first display unit and facing the first housing when being slid and cradled at a known incline angle; and a third housing including a second display unit, and being introduced into the first housing before the second housing is slid and being withdrawn from the first housing after the second housing is slid such that the second housing is inclined and the third housing is inclined in an extension direction of the second housing.
摘要翻译：公开了一种以相同的角度支撑第一和第二显示单元的便携式通信设备及其滑动式支架设备。便携式通信装置包括：第一壳体; 第二壳体，包括第一显示单元，并且当以已知的倾斜角滑动和倾斜时，所述第二壳体面向所述第一壳体; 以及第三壳体，包括第二显示单元，并且在所述第二壳体滑动之后，在所述第二壳体滑动并且在所述第二壳体滑动之后被引入所述第一壳体，并且在所述第二壳体被滑动以使得所述第三壳体倾斜第二壳体的延伸方向。

7. 发明授权

US08493730B2 Portable terminal 有权
标题翻译：便携式终端
公开(公告)号：US08493730B2
公开(公告)日：2013-07-23
申请号：US12870993
申请日：2010-08-30
申请人： Seon-Hee Shim , Sang-Joon Park , Jong-Woo Kim , Seok-Gyu Lee
发明人： Seon-Hee Shim , Sang-Joon Park , Jong-Woo Kim , Seok-Gyu Lee
IPC分类号： G06F1/16 , G09G5/00 , E05D7/00 , E05D3/06 , E05D11/10 , E05C17/64 , H04M1/00
CPC分类号： H04M1/022 , G06F1/1615 , G06F1/1681 , H04M1/0235 , H04M1/0247 , Y10T16/5402 , Y10T16/54038 , Y10T16/541 , Y10T16/547
摘要： A portable terminal is provided, in which a hinge device provides a pair of hinge axes extended in parallel, a pair of folding cases are engaged with the hinge device and rotate upon the hinge axes, respectively, and sliding housings are installed in the respective folding cases. The folding cases rotate in a folding direction or in an unfolding direction via the hinge device, and when the folding cases rotate, the sliding housings slide on the folding cases. When the sliding housings are opened at 180° with respect to each other, one end of the sliding housing is in a close relationship with one end of another sliding housing.
摘要翻译：提供了一种便携式终端，其中铰链装置提供平行延伸的一对铰链轴线，一对折叠壳体分别与铰链装置接合并且在铰链轴线上旋转，并且滑动壳体安装在相应的折叠案件折叠盒通过铰链装置沿折叠方向或展开方向旋转，当折叠壳旋转时，滑动壳体在折叠壳体上滑动。当滑动壳体相对于彼此以180°打开时，滑动壳体的一端与另一个滑动壳体的一端紧密关系。

8. 发明授权

US07777265B2 Semiconductor device having contact barrier and method of manufacturing the same 有权
标题翻译：具有接触屏障的半导体器件及其制造方法
公开(公告)号：US07777265B2
公开(公告)日：2010-08-17
申请号：US11933039
申请日：2007-10-31
申请人： Hyeong-Sun Hong , Jae-Goo Lee , Dong-Hyun Kim , Sung-Un Kwon , Sang-Joon Park , Nam-Jung Kang
发明人： Hyeong-Sun Hong , Jae-Goo Lee , Dong-Hyun Kim , Sung-Un Kwon , Sang-Joon Park , Nam-Jung Kang
IPC分类号： H01L27/108
CPC分类号： H01L27/0207 , H01L21/76802 , H01L27/10808 , H01L27/10855 , H01L27/10885 , Y10S257/905
摘要： A semiconductor device having a contact barrier for insulating contacts with a large aspect ratio and having a fine pitch between adjacent conductive lines and a method of manufacturing the same are provided. The semiconductor device includes a buried contact formed in a region between two adjacent first conductive lines and two adjacent second conductive lines. Insulating lines define a width of the buried contact. To form the contact barrier, an interlayer dielectric layer formed on the second conductive lines is patterned to form a space and an insulating line having an etching ratio different from the interlayer dielectric layer is formed in the space. The interlayer dielectric layer is selectively wet etched relative to an insulating layer covering the second conductive line and the first insulating line to form buried contact hole. The buried contact hole is filled with conductive material to form a buried contact.
摘要翻译：提供一种半导体器件，其具有用于具有大纵横比的绝缘触点的接触屏障，并且在相邻的导线之间具有微细的间距及其制造方法。半导体器件包括形成在两个相邻的第一导电线和两个相邻的第二导电线之间的区域中的掩埋接触。绝缘线限定埋入触点的宽度。为了形成接触屏障，形成在第二导线上的层间电介质层形成空间，并且在该空间中形成具有与层间电介质层不同的蚀刻比的绝缘线。相对于覆盖第二导线和第一绝缘线的绝缘层选择性地湿蚀刻层间电介质层以形成掩埋接触孔。埋入的接触孔填充有导电材料以形成掩埋接触。

9. 发明授权

US06886491B2 Plasma chemical vapor deposition apparatus 有权
标题翻译：等离子体化学气相沉积装置
公开(公告)号：US06886491B2
公开(公告)日：2005-05-03
申请号：US10102108
申请日：2002-03-19
申请人： Jae-Ho Kim , Sang-Joon Park
发明人： Jae-Ho Kim , Sang-Joon Park
IPC分类号： C23C16/455 , C23C16/44 , C23C16/515 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45514 , C23C16/45538 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/515
摘要： The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portionconnected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.
摘要翻译：本发明涉及化学气相沉积装置。在化学气相沉积设备中，连接到外部RF电源的RF电源连接部分安装在室的上侧; 射频电极板安装在腔室内以与腔室的内上表面隔开预定的间隙，并与设置在RF电极板下方的喷头隔开预定间隙; 通过从外部RF电源向RF电极板施加的电力，在由RF电极板和喷头的上表面之间的间隙限定的第一缓冲部分中产生等离子体; 淋浴头在垂直方向上分为两部分，第二缓冲部分由两部分之间的空间限定; 将反应气体供给到其中产生等离子体的第一缓冲部分; 并且源气体被供应到第二缓冲部分。

10. 发明授权

US5711693A Process for formation of large area flat panel display using side junction 失效
标题翻译：使用侧面结合形成大面积平板显示器的方法
公开(公告)号：US5711693A
公开(公告)日：1998-01-27
申请号：US357019
申请日：1994-12-16
申请人： Kee-Soo Nam , Sin-Chong Park , Sang-Joon Park , Sang-Ho Kim
发明人： Kee-Soo Nam , Sin-Chong Park , Sang-Joon Park , Sang-Ho Kim
IPC分类号： G02F1/1333 , G02F1/13 , G02F1/133 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/35 , H01L21/336 , H01L29/786 , H01J9/18
CPC分类号： G02F1/1362 , G02F1/13336
摘要： A process for formation of a large area flat panel display, and particularly a process for formation of a large area flat panel display using a side junction is disclosed, in which a large area is achieved by utilizing a side junction. More specifically, there is provided a process for formation of a thin film transistor liquid crystal display which can be used on all kinds of flat panel displays which uses glass as the substrate. The process for formation of a large area flat panel display utilizing a side junction according to the present invention includes the steps of: applying a side junction process on thin film transistor unit panels 2 so as to obtain a large area; and coupling a common electrode panel with said large area thin film transistor panel formed through said side junction process.
摘要翻译：公开了一种用于形成大面积平板显示器的方法，特别是用于形成使用侧面接合处的大面积平板显示器的工艺，其中通过利用侧面接合来实现大面积。更具体地，提供了可用于各种使用玻璃作为基板的平板显示器的薄膜晶体管液晶显示器的形成工艺。根据本发明的用于形成使用侧面接合的大面积平板显示器的方法包括以下步骤：在薄膜晶体管单元面板2上施加侧接处理以获得大面积; 以及将公共电极面板与通过所述侧面连接工艺形成的所述大面积薄膜晶体管面板耦合。

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