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1. 发明授权

US08053786B2 Top-emitting light emitting diodes and methods of manufacturing thereof 有权
标题翻译：顶部发光二极管及其制造方法
公开(公告)号：US08053786B2
公开(公告)日：2011-11-08
申请号：US12923053
申请日：2010-08-31
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：本发明提供一种具有依次层叠的n型覆盖层，有源层和p型覆盖层的顶部发光氮化物系发光元件，其特征在于，具有形成在p型覆盖层上的界面改性层和透明导电性由形成在界面改性层上的透明导电材料构成的薄膜层; 及其制备方法。根据本发明的顶部发光氮化物系发光器件及其制备方法，提供了与p型覆盖层的欧姆接触改善的优点，从而提高引线键合效率和产率在包装发光器件时，能够通过低比接触电阻和优异的电流 - 电压特性提高器件的发光效率和使用寿命。

2. 发明授权

US08003992B2 Light emitting diode having a wire grid polarizer 有权
标题翻译：具有线栅偏振器的发光二极管
公开(公告)号：US08003992B2
公开(公告)日：2011-08-23
申请号：US12457138
申请日：2009-06-02
申请人： Jun-youn Kim , Taek Kim , Kyoung-kook Kim
发明人： Jun-youn Kim , Taek Kim , Kyoung-kook Kim
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/22 , H01L29/227 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/075 , H01L31/109
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/46 , Y10S977/701 , Y10S977/762 , Y10S977/949
摘要： Example embodiments provide a light emitting diode (LED) having improved polarization characteristics. The LED may include wire grid polarizers on and below a light emitting unit. The wire grid polarizers may be arranged at an angle to each other. Thus, because the LED may emit a light beam in a given polarization direction, an expensive component, e.g., a dual brightness enhanced film (DBEF), is not required. Thus, manufacturing costs of a backlight unit including the LED and a display apparatus including the backlight unit may be reduced.
摘要翻译：示例性实施例提供了具有改进的偏振特性的发光二极管（LED）。 LED可以包括在发光单元上和下方的线栅偏振器。线栅偏振器可以彼此成一定角度布置。因此，由于LED可以在给定的偏振方向上发射光束，所以不需要昂贵的部件，例如双亮度增强膜（DBEF）。因此，可以减少包括LED的背光单元和包括背光单元的显示装置的制造成本。

3. 发明授权

US08003419B2 Method of manufacturing light emitting device 有权
标题翻译：制造发光器件的方法
公开(公告)号：US08003419B2
公开(公告)日：2011-08-23
申请号：US12458900
申请日：2009-07-27
申请人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
发明人： Kyoung-kook Kim , Su-hee Chae , Young-soo Park , Taek Kim , Moon-seung Yang , Hyung-su Jeong , Jae-chul Park , Jun-youn Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.
摘要翻译：提供了一种使用晶片接合方法从大面积接合晶片制造发光器件的方法。该方法可以包括在多个生长衬底上形成多个半导体层，每个半导体层具有发射光的有源区。该方法还可以包括在其上形成半导体层的多个生长衬底布置在一个接合衬底上，并且通过后续处理同时处理在每个生长衬底上形成的每个半导体层。接合晶片可以由减少或防止由于晶片材料（例如蓝宝石）和接合晶片之间的热膨胀系数的差异而导致的弯曲或翘曲的材料形成。根据上述方法，由于可以通过一个处理来处理多个晶片，因此大量生产LED可能会降低制造成本。

4. 发明授权

US07989244B2 Method of manufacturing nitride-based semiconductor light-emitting device 失效
标题翻译：制造氮化物系半导体发光元件的方法
公开(公告)号：US07989244B2
公开(公告)日：2011-08-02
申请号：US11802482
申请日：2007-05-23
申请人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
发明人： Kyoung-kook Kim , Kwang-ki Choi , June-o Song , Suk-ho Yoon , Kwang-hyeon Baik , Hyun-soo Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02472 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01S5/0213 , H01S5/0217
摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.
摘要翻译：提供了一种制造具有提高的效率和增加的输出特性的氮化物基半导体发光器件的方法。该方法可以包括在衬底上形成具有湿蚀刻性质的牺牲层，在牺牲层上形成保护层，在用于晶体生长的反应气体气氛中保护牺牲层，并且促进要形成的半导体层的外延生长在保护层上，在保护层上形成包括n型半导体层，有源层和p型半导体层的半导体器件，并且通过湿式蚀刻牺牲层从半导体器件去除衬底。

5. 发明申请

US20110086448A1 Flip-chip light emitting diodes and method of manufacturing thereof 有权
公开(公告)号：US20110086448A1
公开(公告)日：2011-04-14
申请号：US12926638
申请日：2010-12-01
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/60
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

6. 发明授权

US07871845B2 Nitride-based semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US07871845B2
公开(公告)日：2011-01-18
申请号：US11808368
申请日：2007-06-08
申请人： Suk-ho Yoon , Sung-ho Jin , Kyoung-kook Kim , Jeong-wook Lee
发明人： Suk-ho Yoon , Sung-ho Jin , Kyoung-kook Kim , Jeong-wook Lee
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L33/0079
摘要： Provided is a nitride-based semiconductor light emitting device having increased efficiency and power characteristics and method of manufacturing the same. The method may include forming a sacrificial layer on a substrate, forming a passivation layer on the sacrificial layer, forming a plurality of masking dots of a metal nitride on the passivation layer, laterally epitaxially growing a nitride-based semiconductor layer on the passivation layer using the masking dots as masks, forming a semiconductor device on the nitride-based semiconductor layer, and wet etching the sacrificial layer to separate and/or remove the substrate from the semiconductor device.
摘要翻译：提供了一种具有提高的效率和功率特性的氮化物基半导体发光器件及其制造方法。该方法可以包括在衬底上形成牺牲层，在牺牲层上形成钝化层，在钝化层上形成金属氮化物的多个掩蔽点，在钝化层上横向外延生长氮化物基半导体层，使用掩模点作为掩模，在氮化物基半导体层上形成半导体器件，以及湿蚀刻牺牲层，以从半导体器件分离和/或去除衬底。

7. 发明申请

US20080093617A1 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same 有权
标题翻译：多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法
公开(公告)号：US20080093617A1
公开(公告)日：2008-04-24
申请号：US11808172
申请日：2007-06-07
申请人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
发明人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
IPC分类号： H01L33/00 , H01L21/283 , H01L23/48
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
摘要翻译：提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

8. 发明授权

US07180094B2 Nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：氮化物基发光器件及其制造方法
公开(公告)号：US07180094B2
公开(公告)日：2007-02-20
申请号：US10957704
申请日：2004-10-05
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L29/04
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I–V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.
摘要翻译：提供一种氮化物系发光器件及其制造方法。氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。

9. 发明授权

US08395176B2 Top-emitting nitride-based light-emitting device with ohmic characteristics and luminous efficiency 有权
标题翻译：发光氮化物基发光器件具有欧姆特性和发光效率
公开(公告)号：US08395176B2
公开(公告)日：2013-03-12
申请号：US11076249
申请日：2005-03-10
申请人： Tae-yeong Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem , Jung-inn Sohn
发明人： Tae-yeong Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem , Jung-inn Sohn
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/387 , H01L2933/0016
摘要： A top-emitting nitride-based light-emitting device and a method of manufacturing the same. The top-emitting nitride-based light-emitting device having a substrate, an n-cladding layer, an active layer, and a p-cladding layer sequentially formed includes: a grid cell layer formed on the p-cladding layer by a grid array of separated cells formed from a conducting material with a width of less than 30 micrometers to improve electrical and optical characteristics; a surface protective layer that is formed on the p-cladding layer and covers at least regions between the cells to protect a surface of the p-cladding layer; and a transparent conducting layer formed on the surface protective layer and the grid cell layer using a transparent conducting material. The light-emitting device and the method of manufacturing the same provide an improved ohmic contact to the p-cladding layer, excellent I-V characteristics, and high light transmittance, thus increasing luminous efficiency of the device.
摘要翻译：顶部发光氮化物系发光器件及其制造方法。具有依次形成的基板，n包层，有源层和p型包覆层的顶部发射氮化物系发光器件包括：网格单元层，其通过栅格阵列形成在p包层上由宽度小于30微米的导电材料形成的分离的电池，以改善电气和光学特性; 表面保护层，其形成在所述p包覆层上并且覆盖所述电池之间的至少区域以保护所述p型覆层的表面; 以及使用透明导电材料形成在表面保护层和栅极电池层上的透明导电层。发光器件及其制造方法提供了对p型覆层的改善的欧姆接触，优异的I-V特性和高透光率，从而提高了器件的发光效率。

10. 发明申请

US20090269869A1 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same 有权
标题翻译：多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法
公开(公告)号：US20090269869A1
公开(公告)日：2009-10-29
申请号：US12458136
申请日：2009-07-01
申请人： June-o SONG , Tae-yeon SEONG , Kyoung-kook KIM , Hyun-gi HONG , Kwang-ki CHOI , Hyun-soo KIM
发明人： June-o SONG , Tae-yeon SEONG , Kyoung-kook KIM , Hyun-gi HONG , Kwang-ki CHOI , Hyun-soo KIM
IPC分类号： H01L33/00 , H01L21/283
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
摘要翻译：提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

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