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1. 发明授权

US07410676B2 Chemical vapor deposition method 有权
标题翻译：化学气相沉积法
公开(公告)号：US07410676B2
公开(公告)日：2008-08-12
申请号：US11080237
申请日：2005-03-14
申请人： Jae-Ho Kim , Sang-Joon Park
发明人： Jae-Ho Kim , Sang-Joon Park
IPC分类号： H05H1/24
CPC分类号： C23C16/45544 , C23C16/45514 , C23C16/45538 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/515
摘要： A chemical vapor deposition method comprises steps of: a) injecting a source gas into a chamber so that the source gas is adsorbed on a substrate; b) injecting a purge gas into the chamber for a predetermined period of time so that the source gas remaining in the chamber is purged; c) injecting a reactant gas into a plasma generating portion, and generating plasma at the plasma generating portion by applying a first-level RF power source to a RF electrode plate so that radical of the reactant gas is adsorbed on the substrate; d) injecting a purge gas into the chamber for a predetermined period of time so that the reactant gas remaining in the chamber is purged; and e) applying a second-level RF power source to the plasma generating portion at the step a), b) and d) while the steps a) to d) are being repeated.
摘要翻译：一种化学气相沉积方法包括以下步骤：a）将源气体注入室中，使源气体吸附在基底上; b）将吹扫气体注入所述室中预定的时间段，以便清除残留在所述室中的源气体; c）将反应气体注入到等离子体产生部分中，并通过向RF电极板施加第一级RF电源而在等离子体产生部分产生等离子体，使得反应气体的自由基被吸附在基板上; d）将吹扫气体注入所述室中预定的时间，以便清除残留在所述室中的反应气体; 以及e）在重复步骤a）至d）的同时，在步骤a），b）和d）向等离子体产生部分施加二级RF电源。

2. 发明申请

US20050217582A1 Chemical vapor deposition method 有权
标题翻译：化学气相沉积法
公开(公告)号：US20050217582A1
公开(公告)日：2005-10-06
申请号：US11080237
申请日：2005-03-14
申请人： Jae-Ho Kim , Sang-Joon Park
发明人： Jae-Ho Kim , Sang-Joon Park
IPC分类号： C23C16/455 , C23C16/44 , C23C16/515 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45514 , C23C16/45538 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/515
摘要： The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portion connected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.
摘要翻译：本发明涉及化学气相沉积装置。在化学气相沉积装置中，连接到外部RF电源的RF电源连接部安装在室的上侧; 射频电极板安装在腔室内以与腔室的内上表面隔开预定的间隙，并与设置在RF电极板下方的喷头隔开预定间隙; 通过从外部RF电源向RF电极板施加的电力，在由RF电极板和喷头的上表面之间的间隙限定的第一缓冲部分中产生等离子体; 淋浴头沿垂直方向分为两部分，第二缓冲部分由两部分之间的空间限定; 将反应气体供给到其中产生等离子体的第一缓冲部分; 并且源气体被供应到第二缓冲部分。

3. 发明授权

US06886491B2 Plasma chemical vapor deposition apparatus 有权
标题翻译：等离子体化学气相沉积装置
公开(公告)号：US06886491B2
公开(公告)日：2005-05-03
申请号：US10102108
申请日：2002-03-19
申请人： Jae-Ho Kim , Sang-Joon Park
发明人： Jae-Ho Kim , Sang-Joon Park
IPC分类号： C23C16/455 , C23C16/44 , C23C16/515 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45514 , C23C16/45538 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/515
摘要： The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portionconnected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.
摘要翻译：本发明涉及化学气相沉积装置。在化学气相沉积设备中，连接到外部RF电源的RF电源连接部分安装在室的上侧; 射频电极板安装在腔室内以与腔室的内上表面隔开预定的间隙，并与设置在RF电极板下方的喷头隔开预定间隙; 通过从外部RF电源向RF电极板施加的电力，在由RF电极板和喷头的上表面之间的间隙限定的第一缓冲部分中产生等离子体; 淋浴头在垂直方向上分为两部分，第二缓冲部分由两部分之间的空间限定; 将反应气体供给到其中产生等离子体的第一缓冲部分; 并且源气体被供应到第二缓冲部分。

4. 发明申请

US20150061067A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150061067A1
公开(公告)日：2015-03-05
申请号：US14337811
申请日：2014-07-22
申请人： Hyun-Ju Kim , Jae-June Jang , Hoon Chang , Jae-Ho Kim , Kyu-Heon Cho
发明人： Hyun-Ju Kim , Jae-June Jang , Hoon Chang , Jae-Ho Kim , Kyu-Heon Cho
IPC分类号： H01L29/872 , H01L29/36
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/0623 , H01L29/36 , H01L29/66143
摘要： A semiconductor device includes an epitaxial layer of a first conductive type; an anode electrode and a cathode electrode arranged on the epitaxial layer to be separated from each other; a first drift layer of the first conductive type formed in the epitaxial layer; a Schottky contact area at a region of contact between the anode electrode and the first drift layer; an impurity region of a second conductive type different from the first conductive type at the epitaxial layer; and an insular impurity region formed below the Schottky contact area.
摘要翻译：半导体器件包括第一导电类型的外延层; 布置在所述外延层上以彼此分离的阳极电极和阴极电极; 在外延层中形成的第一导电类型的第一漂移层; 在阳极电极和第一漂移层之间的接触区域处的肖特基接触区域; 在外延层处不同于第一导电类型的第二导电类型的杂质区; 以及形成在肖特基接触区域下方的岛状杂质区域。

5. 发明申请

US20130280859A1 THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20130280859A1
公开(公告)日：2013-10-24
申请号：US13977725
申请日：2011-11-23
申请人： Jae-Ho Kim , Dong-Gun Oh , Do-Hyun Choi , Jin-Wook Moon
发明人： Jae-Ho Kim , Dong-Gun Oh , Do-Hyun Choi , Jin-Wook Moon
IPC分类号： H01L29/66
CPC分类号： H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a gate electrode; source and drain electrodes spaced apart in a up and down direction from the gate electrode and in a horizontal direction from each other; a gate dielectric formed between the gate electrode and the source electrode and between the gate electrode and the drain electrode; and an active layer formed between the gate dielectric and the source electrode and between the gate dielectric and the drain electrode, wherein the active layer is formed of at least two zinc oxide thin layers doped with an element.
摘要翻译：提供一种薄膜晶体管及其制造方法。薄膜晶体管包括：栅电极; 源电极和漏电极在上下方向上从栅电极彼此间隔开，并且在水平方向彼此间隔开; 在所述栅电极和所述源电极之间以及所述栅电极和所述漏极之间形成的栅极电介质; 以及形成在所述栅极电介质和所述源极之间以及所述栅极电介质和所述漏极之间的有源层，其中所述有源层由掺杂有元素的至少两个氧化锌薄层形成。

6. 发明授权

US08302674B2 Air conditioning system for car 有权
标题翻译：汽车空调系统
公开(公告)号：US08302674B2
公开(公告)日：2012-11-06
申请号：US11989949
申请日：2006-05-08
申请人： Jae-Ho Kim , Yong-Jun Jee , Seong-Seok Han
发明人： Jae-Ho Kim , Yong-Jun Jee , Seong-Seok Han
IPC分类号： B60H1/32
CPC分类号： B60H3/0085 , B60H1/00064 , B60H2003/065
摘要： An air conditioning system, which can automatically remove a malodor generated due to condensate water remaining in an evaporator during a predetermined period of time after operation of an air conditioner or turning-off of the air conditioner and control a filtering mode time of a filter to filter an air. The air conditioning system characteristically comprises a shiftable deodorization filter (30 or 40) located on a flow channel of the cool air passageway and operationally moved to a filtering mode position so as to screen the flow channel of the cool air passageway during a predetermined period of time after an air conditioner is turned on or off, whereby the air passing through the cool air passageway C and a malodor contained in the air are filtered.
摘要翻译：一种空调系统，其能够在空调机的运转或空调的关闭之后的预定时间段内自动除去由于蒸发器中残留的冷凝水而产生的恶臭，并且将过滤器的过滤模式时间控制到过滤空气空调系统特征在于包括位于冷空气通道的流动通道上的可移动除臭过滤器（30或40），并可操作地移动到过滤模式位置，以便在预定时间段内屏蔽冷气通道的流动通道打开或关闭空调后的时间，从而过滤通过冷气通道C的空气和包含在空气中的恶臭。

7. 发明申请

US20120236855A1 METHOD FOR CONTROLLING MULTI-SINK/MULTI-PATH ROUTING SENSOR NETWORK AND SENSOR NETWORK USING THE SAME 有权
标题翻译：用于控制多点/多路径路由传感器网络和传感器网络的方法
公开(公告)号：US20120236855A1
公开(公告)日：2012-09-20
申请号：US13115219
申请日：2011-05-25
申请人： Jae-Ho Kim , Kwang-Ho Won , Sang-Shin Lee , Il-Yeup Ahn , Min-Hwan Song , Jae-Seok Yoon , Min-Woo Ryu
发明人： Jae-Ho Kim , Kwang-Ho Won , Sang-Shin Lee , Il-Yeup Ahn , Min-Hwan Song , Jae-Seok Yoon , Min-Woo Ryu
IPC分类号： H04L12/28 , H04L12/56
CPC分类号： H04L45/24 , H04W40/22
摘要： A method for controlling a multi-sink/multi-path routing sensor network and a sensor network system using the same are provided. The method for controlling the sensor network includes generating, at a sensor node, sensing data; transmitting, at the sensor node, the sensing data to a plurality of sink nodes; and forwarding, at the sink nodes receiving the sensing data from the sensor node, the sensing data to a gateway. Hence, it is possible to satisfy the reliability required in the safety-critical system with the minimum traffic. Both of the two conflicting requirements which are the reliability enhancement of the sensor network and the minimization of the network traffic in the repeated data transmission, can be satisfied adequately.
摘要翻译：提供了一种用于控制多宿/多路径路由传感器网络的方法和使用其的传感器网络系统。用于控制传感器网络的方法包括在传感器节点处生成感测数据; 在所述传感器节点处将所述感测数据传输到多个汇聚节点; 并且在接收来自传感器节点的感测数据的接收节点处转发到网关的感测数据。因此，可以以最小的流量满足安全关键系统所需的可靠性。可以充分满足传感器网络的可靠性提高和重复数据传输中网络流量最小化的两个相互冲突的要求。

8. 发明授权

US08144520B2 Non-volatile memory device and method of reading data in a non-volatile memory device 有权
标题翻译：非易失性存储器件以及在非易失性存储器件中读取数据的方法
公开(公告)号：US08144520B2
公开(公告)日：2012-03-27
申请号：US12765011
申请日：2010-04-22
申请人： Jae-Ho Kim , Hyun-Sil Oh
发明人： Jae-Ho Kim , Hyun-Sil Oh
IPC分类号： G11C11/34
CPC分类号： G11C16/08 , G11C8/08 , G11C16/26
摘要： A non-volatile memory device includes a row decoder and a memory cell array. The row decoder generates a read voltage, and first, second and third drive voltages. The memory cell array includes a selected word line receiving the read voltage, a first neighboring word line of the selected word line receiving the second word line drive voltage, a second neighboring word line of the selected word line receiving the third word line drive voltage, and a non-neighboring word line of the selected word line receiving the first word line drive voltage.
摘要翻译：非易失性存储器件包括行解码器和存储单元阵列。行解码器产生读取电压以及第一，第二和第三驱动电压。存储单元阵列包括接收读取电压的选定字线，接收第二字线驱动电压的选定字线的第一相邻字线，接收第三字线驱动电压的选定字线的第二相邻字线，以及接收第一字线驱动电压的所选字线的非相邻字线。

9. 发明授权

US08081960B2 Device and method for processing data resource changing events in a mobile terminal 有权
标题翻译：用于处理移动终端中的数据资源变化事件的设备和方法
公开(公告)号：US08081960B2
公开(公告)日：2011-12-20
申请号：US11357342
申请日：2006-02-21
申请人： Jae-Ho Kim , Hyun-Ji Kim , Jeong-Wook Seo
发明人： Jae-Ho Kim , Hyun-Ji Kim , Jeong-Wook Seo
IPC分类号： H04M3/00 , H04M1/00
CPC分类号： H04M1/72544 , H04M19/041
摘要： A device and method are disclosed for processing a data resource changing event in a mobile terminal by recommending a change from a specific, currently used data resource to a new data resource when the data resource has not been changed for a long time. The method for processing a data resource changing event in a mobile terminal comprises storing the data resource changing event occurring in the mobile terminal, confirming a specialist previously set to process the data resource changing event, calling the confirmed specialist to process the data resource changing event, and displaying an avatar and text according to event processing results.
摘要翻译：公开了一种用于在移动终端中处理数据资源改变事件的装置和方法，当数据资源长时间未被改变时，推荐从特定的当前使用的数据资源到新的数据资源的改变。用于处理移动终端中的数据资源改变事件的方法包括存储在移动终端中发生的数据资源改变事件，确认先前设置为处理数据资源改变事件的专家，呼叫确认的专家处理数据资源改变事件，并根据事件处理结果显示化身和文本。

10. 发明申请

US20110211392A1 CELL STRING OF A MEMORY CELL ARRAY AND METHOD OF ERASING THE SAME 审中-公开
标题翻译：存储单元阵列的单元格字符串及其擦除方法
公开(公告)号：US20110211392A1
公开(公告)日：2011-09-01
申请号：US12961647
申请日：2010-12-07
申请人： Jae-Ho Kim , Jae-Kwan Park , Byung-Jun Hwang , Sung-Bo Shim , Hye-Young Kwon
发明人： Jae-Ho Kim , Jae-Kwan Park , Byung-Jun Hwang , Sung-Bo Shim , Hye-Young Kwon
IPC分类号： G11C16/06 , H01L29/788 , H01L29/792 , G11C16/04
CPC分类号： G11C16/16 , G11C16/0408 , G11C16/0483 , H01L27/11521 , H01L27/11524 , H01L27/11568
摘要： A cell string included in a memory cell array of a nonvolatile memory device includes a plurality of memory cells, a string select transistor, and a ground select transistor. The plurality of memory cells are connected in series. The string select transistor is connected between a bitline and the plurality of memory cells, and has a structure substantially the same as a structure of each memory cell. The ground select transistor is connected between the plurality of memory cells and a common source line, and has a structure substantially the same as the structure of each memory cell.
摘要翻译：包括在非易失性存储器件的存储单元阵列中的单元串包括多个存储单元，串选择晶体管和接地选择晶体管。多个存储单元串联连接。串选择晶体管连接在位线和多个存储单元之间，并且具有与每个存储单元的结构基本相同的结构。接地选择晶体管连接在多个存储单元和公共源极线之间，并且具有与每个存储单元的结构基本相同的结构。

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