专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5280456A Semiconductor memory device enabling change of output organization with high speed operation 失效
标题翻译：半导体存储器件能够实现高速运行时输出组织的改变
公开(公告)号：US5280456A
公开(公告)日：1994-01-18
申请号：US944953
申请日：1992-09-15
申请人： Yoshinori Okajima , Yoshihide Sato , Shinnosuke Kamata
发明人： Yoshinori Okajima , Yoshihide Sato , Shinnosuke Kamata
IPC分类号： G11C11/41 , G11C7/00 , G11C7/10 , G11C11/401 , G11C11/409 , G11C11/419
CPC分类号： G11C7/1006
摘要： A semiconductor memory device enabling change of the output organization has a plurality of memory cell array portions each having a plurality of memory cells for storing data, a plurality of data buses for transferring data, a plurality of sense amplifiers for sensing data of a selected memory cell of the memory cell array portions, and a plurality of output gates connected to the sense amplifiers. At least two of the sense amplifiers are connected to each of the memory cell array portions through the data buses, respectively. The selection of the sense amplifiers is controlled to be activated or deactivated by control signals, to thereby change the output organization. Therefore, a delay in data transmission can be eliminated, and a high speed operation can be realized.
摘要翻译：能够改变输出组织的半导体存储器件具有多个存储单元阵列部分，每个存储单元阵列部分具有用于存储数据的多个存储单元，用于传送数据的多个数据总线，用于感测所选存储器的数据的多个读出放大器存储单元阵列部分的单元，以及连接到读出放大器的多个输出门。至少两个感测放大器分别通过数据总线连接到每个存储单元阵列部分。读出放大器的选择由控制信号控制成激活或去激活，从而改变输出组织。因此，可以消除数据传输的延迟，并且可以实现高速操作。

2. 发明授权

US5412615A Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US5412615A
公开(公告)日：1995-05-02
申请号：US166099
申请日：1993-12-14
申请人： Hiromi Noro , Shinnosuke Kamata , Yoshinori Okajima
发明人： Hiromi Noro , Shinnosuke Kamata , Yoshinori Okajima
IPC分类号： G06F9/38 , G11C7/22 , G11C11/407 , G11C11/413 , G11C11/417 , G11C8/00
CPC分类号： G11C7/225 , G11C7/22
摘要： This invention provides an apparatus in which a time difference between an eternal clock signal and an internal clock signal is eliminated, and in which a high operation speed even at a high operation frequency is accomplished without causing erroneous circuit operations. A semiconductor integrated circuit device is equipped with a signal generator for generating an internal clock signal for determining an operation timing of an internal circuit from an external clock signal. The semiconductor integrated circuit device includes a delay unit for bringing an edge of the external clock signal into conformity with the edge of the internal clock signal by delaying the output of the signal generator by the time obtained by subtracting a time corresponding to a circuit delay of the signal generator from a time corresponding to some integral multiple of a 1/2 cycle of the external clock signal.
摘要翻译：本发明提供一种其中消除了永恒时钟信号和内部时钟信号之间的时间差的装置，并且其中即使在高操作频率下也实现高运行速度而不引起错误的电路操作。半导体集成电路器件配备有信号发生器，用于产生用于从外部时钟信号确定内部电路的操作定时的内部时钟信号。半导体集成电路器件包括延迟单元，用于通过将信号发生器的输出延迟通过减去与电路延迟相对应的时间而获得的时间，使得外部时钟信号的边沿与内部时钟信号的边缘一致信号发生器从对应于外部时钟信号的1/2周期的一些整数倍的时间开始。

3. 发明申请

US20100146201A1 MEMORY DEVICE, MEMORY CONTROLLER AND MEMORY SYSTEM 有权
公开(公告)号：US20100146201A1
公开(公告)日：2010-06-10
申请号：US12612215
申请日：2009-11-04
申请人： Tomohiro Kawakubo , Syusaku Yamaguchi , Hitoshi Ikeda , Toshiya Uchida , Hiroyuki Kobayashi , Tatsuya Kanda , Yoshinobu Yamamoto , Satoru Shirakawa , Tetsuo Miyamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
发明人： Tomohiro Kawakubo , Syusaku Yamaguchi , Hitoshi Ikeda , Toshiya Uchida , Hiroyuki Kobayashi , Tatsuya Kanda , Yoshinobu Yamamoto , Satoru Shirakawa , Tetsuo Miyamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
IPC分类号： G06F12/00
CPC分类号： G11C11/406 , G11C7/1027 , G11C8/12 , G11C11/40618 , G11C11/4087
摘要： Provided is a memory device in which the decrease of the effective bandwidth caused by the refresh operation of the memory device has been solved, a memory controller of the memory device, and a memory system thereof. A memory device that is operated in response to a command from a memory controller has a plurality of banks that respectively have memory cores including memory cell arrays and decoders and are selected by bank addresses; and a control circuit, which, in response to a background refresh command, causes the memory cores within refresh target banks set by the memory controller to successively execute refresh operation a number of times corresponding to refresh burst length that is set by the memory controller, and, in response to a normal operation command, further causes the memory cores within banks other than the refresh target banks and selected by the bank addresses to execute normal memory operation corresponding to the normal operation command, during the refresh operation executed by the memory cores within the refresh target banks.

4. 发明申请

US20080181027A1 Memory device, memory controller and memory system 有权
公开(公告)号：US20080181027A1
公开(公告)日：2008-07-31
申请号：US12000952
申请日：2007-12-19
申请人： Takahiro Sato , Toshiya Uchida , Tatsuya Kanda , Tetsuo Miyamoto , Satoru Shirakawa , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
发明人： Takahiro Sato , Toshiya Uchida , Tatsuya Kanda , Tetsuo Miyamoto , Satoru Shirakawa , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
IPC分类号： G11C7/00 , G11C8/00
CPC分类号： G11C11/4087 , G09G5/393 , G09G5/395 , G11C8/12
摘要： An image memory, image memory system, and memory controller that are capable of efficiently accessing a rectangular area of two-dimensionally arrayed data are provided. The memory device has: a memory cell array that has a plurality of memory unit areas, each of which is selected by addresses; a plurality of input/output terminals; and an input/output unit provided between the memory cell array and the plurality of input/output terminals. Each of the memory unit areas stores therein data of a plurality of bytes or bits corresponding to the plurality of input/output terminals respectively, and the memory cell array and the input/output unit access a plurality of bytes or bits stored in a first memory unit area corresponding to the input address and in a second memory unit area adjacent to the first memory unit on the basis of the input address and combination information of the bytes or bits in response to a first operation code, and then, from the plurality of bytes or bits within the accessed first and second memory unit areas, associate a combination of the plurality of bytes or bits based on the combination information, with the plurality of input/output terminals.

5. 发明授权

US07323789B2 Multiple chip package and IC chips 有权
标题翻译：多芯片封装和IC芯片
公开(公告)号：US07323789B2
公开(公告)日：2008-01-29
申请号：US11043993
申请日：2005-01-28
申请人： Fusao Seki , Tatsushi Otsuka , Masanori Kurita , Shinnosuke Kamata , Toshiya Uchida , Hiroyoshi Tomita , Hiroyuki Kobayashi
发明人： Fusao Seki , Tatsushi Otsuka , Masanori Kurita , Shinnosuke Kamata , Toshiya Uchida , Hiroyoshi Tomita , Hiroyuki Kobayashi
IPC分类号： G11C8/00
CPC分类号： G11C5/04 , G11C5/063 , H01L2224/49113 , H01L2924/3011 , H01L2924/00
摘要： A clock output pad and a return clock receiving pad are disposed on a logic chip at a portion near a side of an integrated circuit chip and a portion near another side of the integrated circuit chip that opposes to the side. A clock receiving pad is disposed on a memory chip at portion near the side and the other side respectively. The clock receiving pad is electrically connected to the clock output pad and the return clock receiving pad. A plurality of clock signals are supplied from the logic chip to the memory chip, and a plurality of return clock signals are returned from the memory chip to the logic chip.
摘要翻译：时钟输出板和返回时钟接收焊盘设置在集成电路芯片的靠近侧面的部分和与集成电路芯片的与侧面相反的另一侧的部分的逻辑芯片上。时钟接收垫分别在靠近侧面和另一侧的部分设置在存储器芯片上。时钟接收板电连接到时钟输出板和返回时钟接收板。多个时钟信号从逻辑芯片提供给存储器芯片，并且多个返回时钟信号从存储器芯片返回到逻辑芯片。

6. 发明授权

US6063640A Semiconductor wafer testing method with probe pin contact 失效
标题翻译：半导体晶圆测试方法与探针接触
公开(公告)号：US6063640A
公开(公告)日：2000-05-16
申请号：US30349
申请日：1998-02-25
申请人： Masataka Mizukoshi , Hidehiko Akasaki , Masao Nakano , Yasuhiro Fujii , Shinnosuke Kamata , Makoto Yanagisawa , Yasurou Matsuzaki , Toyonobu Yamada , Masami Matsuoka , Hiroyoshi Tomita
发明人： Masataka Mizukoshi , Hidehiko Akasaki , Masao Nakano , Yasuhiro Fujii , Shinnosuke Kamata , Makoto Yanagisawa , Yasurou Matsuzaki , Toyonobu Yamada , Masami Matsuoka , Hiroyoshi Tomita
IPC分类号： H01L23/58 , G01R31/26 , H01L21/66
CPC分类号： H01L22/32 , H01L22/22 , H01L2224/05554 , Y10S438/977
摘要： A semiconductor wafer testing method includes a pre-test step for forming a temporary test film on a surface of a semiconductor wafer, a test step for testing the semiconductor wafer by applying a probe to the temporary test film and a post-test step for exfoliating the temporary test film from the surface of the semiconductor wafer. The temporary test film includes test electrode groups each provided with a plurality of regularly arranged test electrodes, and wiring patterns for electrically connecting the test electrodes with corresponding ones of semiconductor unit electrodes in respective semiconductor units on the semiconductor wafer. Probe pins of said probe are arranged so as to be aligned with corresponding ones of the test electrodes of the respective test electrode groups.
摘要翻译：半导体晶片测试方法包括：在半导体晶片的表面上形成临时测试膜的预测试步骤，通过向临时测试膜施加探针来测试半导体晶片的测试步骤和用于去角质的后测试步骤来自半导体晶片表面的临时测试膜。临时测试膜包括各自设置有多个规则排列的测试电极的测试电极组和用于将测试电极与半导体晶片上的各个半导体单元中的相应半导体单元电极电连接的布线图案。所述探针的探头针布置成与各个测试电极组的相应测试电极对齐。

7. 发明授权

US07729200B2 Memory device, memory controller and memory system 失效
公开(公告)号：US07729200B2
公开(公告)日：2010-06-01
申请号：US12000840
申请日：2007-12-18
申请人： Hitoshi Ikeda , Takahiko Sato , Tatsuya Kanda , Toshiya Uchida , Hiroyuki Kobayashi , Satoru Shirakawa , Tetsuo Miyamoto , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
发明人： Hitoshi Ikeda , Takahiko Sato , Tatsuya Kanda , Toshiya Uchida , Hiroyuki Kobayashi , Satoru Shirakawa , Tetsuo Miyamoto , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
IPC分类号： G11C7/10
CPC分类号： G11C8/12 , G06F12/0207
摘要： The memory device has: a plurality of banks, each of which has a memory cell array having a plurality of page areas that are selected by row addresses respectively, and each of which is selected by a bank address; a row controller that controls activation of the page areas within each of the banks in response to a first operation code; and a group of data input/output terminals. A memory unit area within each of the activated page areas is accessed based on the column address. The row controller generates bank activation signals for the plurality of banks in response to multi-bank information data and a supplied bank address that are supplied along with the first command, and generates the row address of each of the plurality of banks in response to the supplied bank address and a supplied row address. The plurality of banks activate the page areas in response to the bank activation signals and the row addresses generated by the row address calculator.

8. 发明申请

US20090027988A1 Memory device, memory controller and memory system 有权
标题翻译：内存设备，内存控制器和内存系统
公开(公告)号：US20090027988A1
公开(公告)日：2009-01-29
申请号：US12000953
申请日：2007-12-19
申请人： Takahiko Sato , Toshiya Uchida , Tatsuya Kanda , Tetsuo Miyamoto , Satoru Shirakawa , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
发明人： Takahiko Sato , Toshiya Uchida , Tatsuya Kanda , Tetsuo Miyamoto , Satoru Shirakawa , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
IPC分类号： G11C7/00 , G11C8/00
CPC分类号： G11C11/4087 , G09G5/393 , G09G5/395 , G11C8/12
摘要： An image memory, image memory system, and memory controller that are capable of efficiently accessing a rectangular area of two-dimensionally arrayed data are provided. The memory device has: a memory cell array that has a plurality of memory unit areas, each of which is selected by addresses; a plurality of input/output terminals; and an input/output unit provided between the memory cell array and the plurality of input/output terminals. Each of the memory unit areas stores therein data of a plurality of bytes or bits corresponding to the plurality of input/output terminals respectively, and the memory cell array and the input/output unit access a plurality of bytes or bits stored in a first memory unit area corresponding to the input address and in a second memory unit area adjacent to the first memory unit on the basis of the input address and combination information of the bytes or bits in response to a first operation code, and then, from the plurality of bytes or bits within the accessed first and second memory unit areas, associate a combination of the plurality of bytes or bits based on the combination information, with the plurality of input/output terminals.
摘要翻译：提供能够有效地访问二维排列数据的矩形区域的图像存储器，图像存储器系统和存储器控制器。存储装置具有：具有多个存储单元区域的存储单元阵列，每个存储单元区域由地址选择; 多个输入/输出端子; 以及设置在存储单元阵列和多个输入/输出端子之间的输入/输出单元。每个存储单元区域分别存储与多个输入/输出端子相对应的多个字节或位的数据，并且存储单元阵列和输入/输出单元访问存储在第一存储器中的多个字节或位基于与第一操作码相对应的字节或比特的输入地址和组合信息，与第一存储器单元相邻的第二存储器单元区域中的对应于输入地址的单位区域和与第一存储器单元相邻的第二存储器单元区域中，在所访问的第一和第二存储器单元区域内的字节或比特，基于组合信息将多个字节或比特的组合与多个输入/输出终端相关联。

9. 发明申请

US20080189467A1 Memory device, memory controller and memory system 失效
公开(公告)号：US20080189467A1
公开(公告)日：2008-08-07
申请号：US12000840
申请日：2007-12-18
申请人： Hitoshi Ikeda , Takahiko Sato , Tatsuya Kanda , Toshiya Uchida , Hiroyuki Kobayashi , Satoru Shirakawa , Tetsuo Miyamoto , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
发明人： Hitoshi Ikeda , Takahiko Sato , Tatsuya Kanda , Toshiya Uchida , Hiroyuki Kobayashi , Satoru Shirakawa , Tetsuo Miyamoto , Yoshinobu Yamamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
IPC分类号： G06F12/00
CPC分类号： G11C8/12 , G06F12/0207
摘要： The memory device has: a plurality of banks, each of which has a memory cell array having a plurality of page areas that are selected by row addresses respectively, and each of which is selected by a bank address; a row controller that controls activation of the page areas within each of the banks in response to a first operation code; and a group of data input/output terminals. A memory unit area within each of the activated page areas is accessed based on the column address. The row controller generates bank activation signals for the plurality of banks in response to multi-bank information data and a supplied bank address that are supplied along with the first command, and generates the row address of each of the plurality of banks in response to the supplied bank address and a supplied row address. The plurality of banks activate the page areas in response to the bank activation signals and the row addresses generated by the row address calculator.

10. 发明申请

US20080151670A1 Memory device, memory controller and memory system 审中-公开
标题翻译：内存设备，内存控制器和内存系统
公开(公告)号：US20080151670A1
公开(公告)日：2008-06-26
申请号：US11709867
申请日：2007-02-23
申请人： Tomohiro Kawakubo , Syusaku Yamaguchi , Hitoshi Ikeda , Toshiya Uchida , Hiroyuki Kobayashi , Tatsuya Kanda , Yoshinobu Yamamoto , Satoru Shirakawa , Tetsuo Miyamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
发明人： Tomohiro Kawakubo , Syusaku Yamaguchi , Hitoshi Ikeda , Toshiya Uchida , Hiroyuki Kobayashi , Tatsuya Kanda , Yoshinobu Yamamoto , Satoru Shirakawa , Tetsuo Miyamoto , Tatsushi Otsuka , Hidenaga Takahashi , Masanori Kurita , Shinnosuke Kamata , Ayako Sato
IPC分类号： G11C7/00
CPC分类号： G11C11/406 , G11C7/1027 , G11C8/12 , G11C11/40618 , G11C11/4087
摘要： Provided is a memory device in which the decrease of the effective bandwidth caused by the refresh operation of the memory device has been solved, a memory controller of the memory device, and a memory system thereof. A memory device that is operated in response to a command from a memory controller has a plurality of banks that respectively have memory cores including memory cell arrays and decoders and are selected by bank addresses; and a control circuit, which, in response to a background refresh command, causes the memory cores within refresh target banks set by the memory controller to successively execute refresh operation a number of times corresponding to refresh burst length that is set by the memory controller, and, in response to a normal operation command, further causes the memory cores within banks other than the refresh target banks and selected by the bank addresses to execute normal memory operation corresponding to the normal operation command, during the refresh operation executed by the memory cores within the refresh target banks.
摘要翻译：提供了一种存储装置，其中已经解决了由存储装置的刷新操作引起的有效带宽的减少，存储装置的存储器控制器及其存储器系统。响应于来自存储器控制器的命令操作的存储器件具有分别具有存储器核心的多个存储体，包括存储器单元阵列和解码器，并且由存储体地址选择; 以及控制电路，其响应于后台刷新命令使由所述存储器控制器设置的刷新对象组内的存储器核心依次执行对应于由所述存储器控制器设置的刷新突发长度的次数的刷新操作，并且响应于正常操作命令，在由存储器核心执行的刷新操作期间进一步使存储器内的存储器核心在刷新对象组之外并由存储体地址选择以执行与正常操作命令相对应的正常存储器操作在刷新目标银行。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式