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1. 发明授权

US06372628B1 Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device 失效
标题翻译：包含无定形氟化碳的绝缘膜，包括这种绝缘膜的半导体器件及其半导体器件的制造方法
公开(公告)号：US06372628B1
公开(公告)日：2002-04-16
申请号：US09579474
申请日：2000-05-26
申请人： Yoshihisa Matsubara , Ko Noguchi , Shinya Ito , Noriaki Oda , Akira Matsumoto , Takashi Ishigami , Masahiko Nakamae , Tadahiko Horiuchi , Kazuhiko Endo , Toru Tatsumi , Yoshishige Matsumoto
发明人： Yoshihisa Matsubara , Ko Noguchi , Shinya Ito , Noriaki Oda , Akira Matsumoto , Takashi Ishigami , Masahiko Nakamae , Tadahiko Horiuchi , Kazuhiko Endo , Toru Tatsumi , Yoshishige Matsumoto
IPC分类号： H01L214763
CPC分类号： H01L21/02118 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/312 , H01L21/3185 , H01L21/76801 , H01L21/76802 , H01L21/76832 , H01L21/76834 , H01L23/53223 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A structure and manufacturing process of a low dielectric constant interlayer insulating film used between wiring layers and semiconductor devices using such film are disclosed. The insulating film which can withstand in an actual process comprises an amorphous carbon fluoride film. A diamond like carbon film and a silicon excess layer are disposed on both sides of the amorphous carbon fluoride film to be inserted between the wiring layers, whereby adhesion to wiring and another insulating film contacting it is significantly enhanced. In addition, a silicon based insulating film is disposed and flattened on a multilayer film containing an amorphous carbon fluoride film buried with a wiring layer, and is used as a hard mask for anisotropically etching the diamond like carbon film and the amorphous carbon fluoride film with oxygen plasma to form a via hole.
摘要翻译：公开了在布线层和使用这种膜的半导体器件之间使用的低介电常数层间绝缘膜的结构和制造工艺。可以在实际工艺中承受的绝缘膜包括无定形氟化碳膜。在无定形氟化碳膜的两侧设置有类金刚石碳膜和硅过剩层，以插入布线层之间，从而显着提高与布线的接合和与其接触的另一绝缘膜。另外，将硅基绝缘膜设置并平坦化在含有埋设有布线层的无定形氟化碳膜的多层膜上，并且用作用于各向异性蚀刻金刚石状碳膜和无定形氟化碳膜的硬掩模，氧等离子体形成通孔。

2. 发明授权

US06091081A Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film 失效
标题翻译：包含无定形氟化碳的绝缘膜，包括这种绝缘膜的半导体器件
公开(公告)号：US06091081A
公开(公告)日：2000-07-18
申请号：US982585
申请日：1997-12-02
申请人： Yoshihisa Matsubara , Ko Noguchi , Shinya Ito , Noriaki Oda , Akira Matsumoto , Takashi Ishigami , Masahiko Nakamae , Tadahiko Horiuchi , Kazuhiko Endo , Toru Tatsumi , Yoshishige Matsumoto
发明人： Yoshihisa Matsubara , Ko Noguchi , Shinya Ito , Noriaki Oda , Akira Matsumoto , Takashi Ishigami , Masahiko Nakamae , Tadahiko Horiuchi , Kazuhiko Endo , Toru Tatsumi , Yoshishige Matsumoto
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/312 , H01L21/314 , H01L21/318 , H01L21/768 , H01L23/522 , H01L23/532 , H01L31/0312
CPC分类号： H01L21/76834 , H01L21/312 , H01L21/3185 , H01L21/76801 , H01L21/76802 , H01L21/76832 , H01L23/53223 , H01L23/5329 , H01L2924/0002
摘要： A structure and manufacturing process of a low dielectric constant interlayer insulating film used between wiring layers and semiconductor devices using such film are disclosed. The insulating film which can withstand in an actual process comprises an amorphous carbon fluoride film. A diamond like carbon film and a silicon excess layer are disposed on both sides of the amorphous carbon fluoride film to be inserted between the wiring layers, whereby adhesion to wiring and another insulating film contacting it is significantly enhanced. In addition, a silicon based insulating film is disposed and flattened on a multilayer film containing an amorphous carbon fluoride film buried with a wiring layer, and is used as a hard mask for anisotropically etching the diamond like carbon film and the amorphous carbon fluoride film with oxygen plasma to form a via hole.
摘要翻译：公开了在布线层和使用这种膜的半导体器件之间使用的低介电常数层间绝缘膜的结构和制造工艺。可以在实际工艺中承受的绝缘膜包括无定形氟化碳膜。在无定形氟化碳膜的两侧设置有类金刚石碳膜和硅过剩层，以插入布线层之间，从而显着提高与布线的接合和与其接触的另一绝缘膜。此外，将硅基绝缘膜设置并平坦化在含有埋设有布线层的无定形氟化碳膜的多层膜上，并且用作用于各向异性蚀刻类金刚石碳膜和无定形氟化碳膜的硬掩模，氧等离子体形成通孔。

3. 发明授权

US06180531B2 Semiconductor manufacturing method 有权
标题翻译：半导体制造方法
公开(公告)号：US06180531B2
公开(公告)日：2001-01-30
申请号：US09231493
申请日：1999-01-14
申请人： Yoshishige Matsumoto , Yoshitake Ohnishi , Kazuhiko Endo , Toru Tatsumi
发明人： Yoshishige Matsumoto , Yoshitake Ohnishi , Kazuhiko Endo , Toru Tatsumi
IPC分类号： H01L21302
CPC分类号： H01L21/76831 , H01L21/0212 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/31144 , H01L21/3127 , H01L21/76801 , H01L21/76802
摘要： A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film, is manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.
摘要翻译：一种半导体器件，其中布线层通过绝缘膜彼此电绝缘，所述绝缘膜包括以碳和氟为主要成分的无定形氟化碳膜绝缘膜，并且所述布线层通过埋入的导电材料彼此电连接通过选择性地蚀刻无定形氟化碳膜来制造穿透绝缘膜的孔。此外，在无定形氟化碳膜和所述孔的侧表面或无定形氟化碳膜及其侧表面之一上形成氧化硅膜，氮化硅膜或氮氧化硅膜。

4. 发明授权

US5866920A Semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US5866920A
公开(公告)日：1999-02-02
申请号：US813338
申请日：1997-03-07
申请人： Yoshishige Matsumoto , Yoshitake Ohnishi , Kazuhiko Endo , Toru Tatsumi
发明人： Yoshishige Matsumoto , Yoshitake Ohnishi , Kazuhiko Endo , Toru Tatsumi
IPC分类号： G03F7/075 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76831 , H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/3127
摘要： A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film, is manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.
摘要翻译：一种半导体器件，其中布线层通过绝缘膜彼此电绝缘，所述绝缘膜包括以碳和氟为主要成分的无定形氟化碳膜绝缘膜，并且所述布线层通过埋入的导电材料彼此电连接通过选择性地蚀刻无定形氟化碳膜来制造穿透绝缘膜的孔。此外，在无定形氟化碳膜和所述孔的侧表面或无定形氟化碳膜及其侧表面之一上形成氧化硅膜，氮化硅膜或氮氧化硅膜。

5. 发明授权

US4689646A Depletion mode two-dimensional electron gas field effect transistor and the method for manufacturing the same 失效
标题翻译：耗散模式二维电子气场效应晶体管及其制造方法
公开(公告)号：US4689646A
公开(公告)日：1987-08-25
申请号：US741597
申请日：1985-06-05
申请人： Yoshishige Matsumoto , Naotaka Iwata
发明人： Yoshishige Matsumoto , Naotaka Iwata
IPC分类号： H01L29/812 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/338 , H01L29/04 , H01L29/15 , H01L29/778 , H01L29/80
CPC分类号： H01L21/268 , H01L29/04 , H01L29/155 , H01L29/7787
摘要： The depletion mode two-dimensional electron gas field effect transistor comprises a substantially pure semiconductor layer, an impurity doped super lattice semiconductor layer formed on the pure semiconductor layer, the energy band gaps and the electron affinities of the pure semiconductor layer and the super lattice semiconductor layer being selected to produce the two-dimensional electron gas at the surface of the pure semiconductor layer when no bias is applied to the super lattice semiconductor layer, source and drain regions formed separatedly in the super lattice semiconductor layer to reach the pure semiconductor layer, a gate electrode formed on the super lattice semiconductor layer between the source and drain regions, and large energy band gap regions formed at side portions of the gate electrode which do not face the source and drain regions, the large energy band gap regions having an energy band gap larger than the super lattice semiconductor layer and being formed by local annealing to convert the super lattice semiconductor to a mixed semiconductor.
摘要翻译：耗尽型二维电子气体场效应晶体管包括基本上纯的半导体层，形成在纯半导体层上的杂质掺杂超晶格半导体层，纯半导体层和超晶格半导体的能带隙和电子亲和力当在超晶格半导体层中分离形成的超晶格半导体层，源极和漏极区域不施加偏压以到达纯半导体层时，选择在纯半导体层的表面处产生二维电子气的层，形成在源极和漏极区域之间的超晶格半导体层上的栅电极，以及形成在栅电极的不面向源区和漏区的侧部的大能带隙区，大能带隙区具有能量带隙大于超晶格半导体层并由本地形成 l退火以将超晶格半导体转换成混合半导体。

6. 发明授权

US06252261B1 GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor 有权
标题翻译： GaN晶体膜，III族元素氮化物半导体晶片及其制造方法
公开(公告)号：US06252261B1
公开(公告)日：2001-06-26
申请号：US09342003
申请日：1999-06-28
申请人： Akira Usui , Akira Sakai , Haruo Sunakawa , Masashi Mizuta , Yoshishige Matsumoto
发明人： Akira Usui , Akira Sakai , Haruo Sunakawa , Masashi Mizuta , Yoshishige Matsumoto
IPC分类号： H01L310328
CPC分类号： H01L21/02378 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/02658 , H01L29/2003 , H01S5/0202 , H01S5/0213 , H01S5/0217 , H01S5/34333 , H01S2304/12
摘要： A GaN crystal film having a mask patterned in a stripe for forming multiple growing areas on a sapphire substrate and coalesced GaN crystals covering the mask dividing the areas, grown from the neighboring growing areas, comprising defects where multiple dislocations along with the stripe are substantially aligned with the normal line of the substrate, in the crystal areas over the mask, and dislocations propagating in substantially parallel with the substrate surface while, in the vicinity of the areas where the crystals are coalesced over the mask, propagating substantially in the normal line of the substrate surface, and a manufacturing process therefor. According to this invention, there can be provided a GaN crystal film in which strain, defects and dislocations are reduced and which tends not to generate cracks.
摘要翻译：一种GaN晶体膜，其具有在条纹上图案化的掩模，用于在蓝宝石衬底上形成多个生长区域，并且覆盖覆盖从相邻生长区域生长的区域的掩模的聚结的GaN晶体，其包括与条纹多个位错基本对齐的缺陷与衬底的法线，在掩模上方的晶体区域中，以及基本上平行于衬底表面传播的位错，而在晶体结合在掩模上的区域附近，基本上在基板表面及其制造工艺。根据本发明，可以提供一种其中应变，缺陷和位错减少并且不会产生裂纹的GaN晶体膜。

7. 发明授权

US4434491A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4434491A
公开(公告)日：1984-02-28
申请号：US248157
申请日：1981-03-30
申请人： Isamu Sakuma , Katsuhiko Nishida , Hideo Kawano , Masayasu Ueno , Yoshishige Matsumoto , Shohei Matsumoto , Takao Furuse
发明人： Isamu Sakuma , Katsuhiko Nishida , Hideo Kawano , Masayasu Ueno , Yoshishige Matsumoto , Shohei Matsumoto , Takao Furuse
IPC分类号： H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234
摘要： A semiconductor laser of the rib guide type having the thickness of an active layer within a stripe-shaped region thicker than that of the outside, and thus the stripe-shaped region is made to have a waveguide action and, thereby, fundamental mode laser may be achieved.
摘要翻译：肋引导型的半导体激光器具有比外部厚的条形区域内的有源层的厚度，并且因此使条形区域具有波导作用，因此基模激光器实现。

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