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1. 发明授权

US06180531B2 Semiconductor manufacturing method 有权
标题翻译：半导体制造方法
公开(公告)号：US06180531B2
公开(公告)日：2001-01-30
申请号：US09231493
申请日：1999-01-14
申请人： Yoshishige Matsumoto , Yoshitake Ohnishi , Kazuhiko Endo , Toru Tatsumi
发明人： Yoshishige Matsumoto , Yoshitake Ohnishi , Kazuhiko Endo , Toru Tatsumi
IPC分类号： H01L21302
CPC分类号： H01L21/76831 , H01L21/0212 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/31144 , H01L21/3127 , H01L21/76801 , H01L21/76802
摘要： A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film, is manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.
摘要翻译：一种半导体器件，其中布线层通过绝缘膜彼此电绝缘，所述绝缘膜包括以碳和氟为主要成分的无定形氟化碳膜绝缘膜，并且所述布线层通过埋入的导电材料彼此电连接通过选择性地蚀刻无定形氟化碳膜来制造穿透绝缘膜的孔。此外，在无定形氟化碳膜和所述孔的侧表面或无定形氟化碳膜及其侧表面之一上形成氧化硅膜，氮化硅膜或氮氧化硅膜。

2. 发明授权

US5866920A Semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US5866920A
公开(公告)日：1999-02-02
申请号：US813338
申请日：1997-03-07
申请人： Yoshishige Matsumoto , Yoshitake Ohnishi , Kazuhiko Endo , Toru Tatsumi
发明人： Yoshishige Matsumoto , Yoshitake Ohnishi , Kazuhiko Endo , Toru Tatsumi
IPC分类号： G03F7/075 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76831 , H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/3127
摘要： A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film, is manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.
摘要翻译：一种半导体器件，其中布线层通过绝缘膜彼此电绝缘，所述绝缘膜包括以碳和氟为主要成分的无定形氟化碳膜绝缘膜，并且所述布线层通过埋入的导电材料彼此电连接通过选择性地蚀刻无定形氟化碳膜来制造穿透绝缘膜的孔。此外，在无定形氟化碳膜和所述孔的侧表面或无定形氟化碳膜及其侧表面之一上形成氧化硅膜，氮化硅膜或氮氧化硅膜。

3. 发明授权

US06372628B1 Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device 失效
标题翻译：包含无定形氟化碳的绝缘膜，包括这种绝缘膜的半导体器件及其半导体器件的制造方法
公开(公告)号：US06372628B1
公开(公告)日：2002-04-16
申请号：US09579474
申请日：2000-05-26
申请人： Yoshihisa Matsubara , Ko Noguchi , Shinya Ito , Noriaki Oda , Akira Matsumoto , Takashi Ishigami , Masahiko Nakamae , Tadahiko Horiuchi , Kazuhiko Endo , Toru Tatsumi , Yoshishige Matsumoto
发明人： Yoshihisa Matsubara , Ko Noguchi , Shinya Ito , Noriaki Oda , Akira Matsumoto , Takashi Ishigami , Masahiko Nakamae , Tadahiko Horiuchi , Kazuhiko Endo , Toru Tatsumi , Yoshishige Matsumoto
IPC分类号： H01L214763
CPC分类号： H01L21/02118 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/312 , H01L21/3185 , H01L21/76801 , H01L21/76802 , H01L21/76832 , H01L21/76834 , H01L23/53223 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A structure and manufacturing process of a low dielectric constant interlayer insulating film used between wiring layers and semiconductor devices using such film are disclosed. The insulating film which can withstand in an actual process comprises an amorphous carbon fluoride film. A diamond like carbon film and a silicon excess layer are disposed on both sides of the amorphous carbon fluoride film to be inserted between the wiring layers, whereby adhesion to wiring and another insulating film contacting it is significantly enhanced. In addition, a silicon based insulating film is disposed and flattened on a multilayer film containing an amorphous carbon fluoride film buried with a wiring layer, and is used as a hard mask for anisotropically etching the diamond like carbon film and the amorphous carbon fluoride film with oxygen plasma to form a via hole.
摘要翻译：公开了在布线层和使用这种膜的半导体器件之间使用的低介电常数层间绝缘膜的结构和制造工艺。可以在实际工艺中承受的绝缘膜包括无定形氟化碳膜。在无定形氟化碳膜的两侧设置有类金刚石碳膜和硅过剩层，以插入布线层之间，从而显着提高与布线的接合和与其接触的另一绝缘膜。另外，将硅基绝缘膜设置并平坦化在含有埋设有布线层的无定形氟化碳膜的多层膜上，并且用作用于各向异性蚀刻金刚石状碳膜和无定形氟化碳膜的硬掩模，氧等离子体形成通孔。

4. 发明授权

US06091081A Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film 失效
标题翻译：包含无定形氟化碳的绝缘膜，包括这种绝缘膜的半导体器件
公开(公告)号：US06091081A
公开(公告)日：2000-07-18
申请号：US982585
申请日：1997-12-02
申请人： Yoshihisa Matsubara , Ko Noguchi , Shinya Ito , Noriaki Oda , Akira Matsumoto , Takashi Ishigami , Masahiko Nakamae , Tadahiko Horiuchi , Kazuhiko Endo , Toru Tatsumi , Yoshishige Matsumoto
发明人： Yoshihisa Matsubara , Ko Noguchi , Shinya Ito , Noriaki Oda , Akira Matsumoto , Takashi Ishigami , Masahiko Nakamae , Tadahiko Horiuchi , Kazuhiko Endo , Toru Tatsumi , Yoshishige Matsumoto
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/312 , H01L21/314 , H01L21/318 , H01L21/768 , H01L23/522 , H01L23/532 , H01L31/0312
CPC分类号： H01L21/76834 , H01L21/312 , H01L21/3185 , H01L21/76801 , H01L21/76802 , H01L21/76832 , H01L23/53223 , H01L23/5329 , H01L2924/0002
摘要： A structure and manufacturing process of a low dielectric constant interlayer insulating film used between wiring layers and semiconductor devices using such film are disclosed. The insulating film which can withstand in an actual process comprises an amorphous carbon fluoride film. A diamond like carbon film and a silicon excess layer are disposed on both sides of the amorphous carbon fluoride film to be inserted between the wiring layers, whereby adhesion to wiring and another insulating film contacting it is significantly enhanced. In addition, a silicon based insulating film is disposed and flattened on a multilayer film containing an amorphous carbon fluoride film buried with a wiring layer, and is used as a hard mask for anisotropically etching the diamond like carbon film and the amorphous carbon fluoride film with oxygen plasma to form a via hole.
摘要翻译：公开了在布线层和使用这种膜的半导体器件之间使用的低介电常数层间绝缘膜的结构和制造工艺。可以在实际工艺中承受的绝缘膜包括无定形氟化碳膜。在无定形氟化碳膜的两侧设置有类金刚石碳膜和硅过剩层，以插入布线层之间，从而显着提高与布线的接合和与其接触的另一绝缘膜。此外，将硅基绝缘膜设置并平坦化在含有埋设有布线层的无定形氟化碳膜的多层膜上，并且用作用于各向异性蚀刻类金刚石碳膜和无定形氟化碳膜的硬掩模，氧等离子体形成通孔。

5. 发明授权

US6071797A Method for forming amorphous carbon thin film by plasma chemical vapor deposition 失效
标题翻译：通过等离子体化学气相沉积法形成无定形碳薄膜的方法
公开(公告)号：US6071797A
公开(公告)日：2000-06-06
申请号：US719958
申请日：1996-09-24
申请人： Kazuhiko Endo , Toru Tatsumi
发明人： Kazuhiko Endo , Toru Tatsumi
IPC分类号： C23C16/26 , C23C16/44 , C23C16/50 , H01L21/285 , H01L21/31 , H01L21/312 , H05H1/00
CPC分类号： C23C16/26 , C23C16/4401 , H01L21/3127 , Y10S438/905 , Y10S438/931
摘要： In a method of forming an amorphous carbon thin film with a plasma chemical vapor deposition method, at least one of a hydrocarbon gas and a carbon fluoride gas is supplied in a reaction chamber as a material gas. By applying a high voltage between two electrodes, a plasma is generated in the reaction chamber using the supplied material gas. As a result, an amorphous carbon thin film is deposited on a substrate while preventing deposition of an adhesion on an inner wall of the reaction chamber. In order to prevent the adhesion from depositing on the inner wall, a bias voltage such as one of DC bias, a high frequency bias and a high frequency bias imposed on a DC bias is applied to the electrically conductive reaction chamber.
摘要翻译：在通过等离子体化学气相沉积法形成无定形碳薄膜的方法中，烃气体和氟化碳气体中的至少一种作为原料气体供应到反应室中。通过在两个电极之间施加高电压，使用所提供的原料气体在反应室中产生等离子体。结果，在基板上沉积无定形碳薄膜，同时防止粘附在反应室内壁上。为了防止粘附在内壁上，向导电反应室施加诸如DC偏压之一，高频偏置和施加在DC偏压上的高频偏压之类的偏置电压。

6. 发明授权

US08399879B2 Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor 有权
标题翻译：纳米线场效应晶体管，晶体管的制造方法以及包括晶体管的集成电路
公开(公告)号：US08399879B2
公开(公告)日：2013-03-19
申请号：US12993880
申请日：2009-06-05
申请人： Yongxun Liu , Takashi Matsukawa , Kazuhiko Endo , Shinichi Ouchi , Kunihiro Sakamoto , Meishoku Masahara
发明人： Yongxun Liu , Takashi Matsukawa , Kazuhiko Endo , Shinichi Ouchi , Kunihiro Sakamoto , Meishoku Masahara
IPC分类号： H01L29/06 , H01L31/072 , H01L31/019 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/045 , H01L29/0673 , H01L29/42392 , H01L29/78696
摘要： Provided is a method for fabricating a nano-wire field effect transistor including steps of: preparing an SOI substrate having a (100) surface orientation, and nano-wire field effect transistor where two triangular columnar members configuring the nano-wires and being made of a silicon crystal layer are arranged one above the other on an SOI substrate having a (100) surface such a way that the ridge lines of the triangular columnar members face via an insulator; processing the silicon crystal configuring the SOI substrate into a standing plate-shaped member having a rectangular cross-section; and as a nanowire, processing the silicon crystal by orientation dependent wet etching into a shape where two triangular columnar members are arranged one above the other in such a way that the ridge lines of the triangular columnar members configuring the nano-wires face through the ridge lines thereof, and an integrated circuit including the nano-wire field effect transistor.
摘要翻译：提供一种制造纳米线场效应晶体管的方法，包括以下步骤：制备具有（100）表面取向的SOI衬底和纳米线场效应晶体管，其中构成纳米线的两个三角柱形构件由在具有（100）表面的SOI衬底上，使三角柱状构件的棱线经由绝缘体面对，从而将硅晶体层彼此重叠地布置; 将构成SOI衬底的硅晶体加工成具有矩形横截面的立式板状构件; 并且作为纳米线，通过取向相关的湿法蚀刻将硅晶体加工成两个三角柱形部件一个在另一个上方布置的形状，使得构成纳米线的三角柱形部件的脊线面向通过脊线，以及包括纳米线场效应晶体管的集成电路。

7. 发明授权

US08040717B2 SRAM cell and SRAM device 有权
标题翻译： SRAM单元和SRAM器件
公开(公告)号：US08040717B2
公开(公告)日：2011-10-18
申请号：US12521408
申请日：2007-12-20
申请人： Shinichi Ouchi , Yongxun Liu , Meishoku Masahara , Takashi Matsukawa , Kazuhiko Endo
发明人： Shinichi Ouchi , Yongxun Liu , Meishoku Masahara , Takashi Matsukawa , Kazuhiko Endo
IPC分类号： G11C11/00
CPC分类号： H01L27/1104 , H01L21/845 , H01L27/11 , H01L27/1211 , H01L29/785 , H01L29/7856
摘要： A static random access memory (SRAM) cell includes a first to a fourth semiconductor thin plate that are provided on a substrate and are arranged parallel to each other. On respective semiconductor thin plates, there is formed a first four-terminal double-gate field effect transistor (FET) with a first conductivity type, a second and a third four-terminal double-gate FET which are connected in series with each other and have a second conductivity type, a fourth and a fifth four-terminal double-gate FET which are connected in series with each other and have the second conductivity type, and a sixth four-terminal double-gate FET with the first conductivity type. The third and the fourth four-terminal double-gate FETs form select transistors, and the first, second, fifth and sixth four-terminal double-gate FETs form a complementary metal-oxide-semiconductor (CMOS) inverter.
摘要翻译：静态随机存取存储器（SRAM）单元包括设置在基板上并且彼此平行布置的第一至第四半导体薄板。在相应的半导体薄板上形成具有第一导电类型的第一四端双栅场效应晶体管（FET），彼此串联连接的第二和第三四端双栅FET 具有彼此串联并具有第二导电类型的第二导电类型，第四和第五四端子双栅极FET以及具有第一导电类型的第六四端子双栅极FET。第三和第四四端子双栅极FET形成选择晶体管，第一，第二，第五和第六四端子双栅极FET形成互补的金属氧化物半导体（CMOS）反相器。

8. 发明授权

US07536153B2 Activation signal output circuit having multiple amplifier circuits 有权
标题翻译：激活信号输出电路具有多个放大电路
公开(公告)号：US07536153B2
公开(公告)日：2009-05-19
申请号：US10566614
申请日：2004-12-15
申请人： Hisanori Uda , Hiroaki Hayashi , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo
发明人： Hisanori Uda , Hiroaki Hayashi , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo
IPC分类号： H04B1/16
CPC分类号： H03F3/45085 , H03F3/189 , H03F3/3022 , H03F2200/54
摘要： With a capacitor C inserted in an interstage portion of multiple stages of amplifier circuits, a high pass filter is generated by the capacitor C and an input impedance |Z| of an amplifier circuit in the next stage. Accordingly, frequency components lower than a cutoff frequency fc are cut off, and therefore are not transferred to the subsequent stage. However, radio frequency components higher than or equal to a fundamental wave component determined by an envelope of a radio frequency signal intermittently transmitted can be transferred. Consequently, transfer of DC offset potentials can be cut off, and noise, such as flicker noise, having great power in a DC or near-DC zone can be effectively cut off. Thereby, the S/N ratio, detection sensitivity, and detection accuracy can be improved.
摘要翻译：通过将电容器C插入到多级放大器电路的级间部分中，由电容器C产生高通滤波器，并且输入阻抗| Z | 的放大器电路在下一阶段。因此，低于截止频率fc的频率分量被切断，因此不会转移到后续阶段。然而，可以传送高于或等于由间歇发送的射频信号的包络确定的基波分量的射频分量。因此，DC偏移电位的传递可以被切断，并且可以有效地切断在DC或近DC区域具有大功率的噪声，例如闪烁噪声。从而可以提高S / N比，检测灵敏度和检测精度。

9. 发明申请

US20060217099A1 Activation signal output circuit 有权
标题翻译：激活信号输出电路
公开(公告)号：US20060217099A1
公开(公告)日：2006-09-28
申请号：US10566614
申请日：2004-12-15
申请人： Hisanori Uda , Hiroaki Hayashi , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo
发明人： Hisanori Uda , Hiroaki Hayashi , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo
IPC分类号： H04B1/10
CPC分类号： H03F3/45085 , H03F3/189 , H03F3/3022 , H03F2200/54
摘要： With a capacitor C inserted in an interstage portion of multiple stages of amplifier circuits, a high pass filter is generated by the capacitor C and an input impedance |Z| of an amplifier circuit in the next stage. Accordingly, frequency components lower than a cutoff frequency fc are cut off, and therefore are not transferred to the subsequent stage. However, radio frequency components higher than or equal to a fundamental wave component determined by an envelope of a radio frequency signal intermittently transmitted can be transferred. Consequently, transfer of DC offset potentials can be cut off, and noise, such as flicker noise, having great power in a DC or near-DC zone can be effectively cut off. Thereby, the S/N ratio, detection sensitivity, and detection accuracy can be improved.
摘要翻译：通过将电容器C插入到多级放大器电路的级间部分中，由电容器C产生高通滤波器，并且输入阻抗| Z | 的放大器电路在下一阶段。因此，低于截止频率fc的频率分量被切断，因此不会转移到后续阶段。然而，可以传送高于或等于由间歇发送的射频信号的包络确定的基波分量的射频分量。因此，DC偏移电位的传递可以被切断，并且可以有效地切断在DC或近DC区域具有大功率的噪声，例如闪烁噪声。从而可以提高S / N比，检测灵敏度和检测精度。

10. 发明申请

US20060071654A1 Activation signal output circuit and determining circuit 失效
标题翻译：激活信号输出电路和确定电路
公开(公告)号：US20060071654A1
公开(公告)日：2006-04-06
申请号：US10536338
申请日：2003-11-26
申请人： Kazuo Mizuno , Ryu Kimura , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo , Hisanori Uda , Hiroaki Hayashi
发明人： Kazuo Mizuno , Ryu Kimura , Yoshiyuki Kago , Yukiomi Tanaka , Kazuhiko Endo , Hisanori Uda , Hiroaki Hayashi
IPC分类号： G01R25/00
CPC分类号： H03D1/10 , H03D1/18
摘要： A start signal output circuit having an RF/DC conversion circuit to which radio frequency power (RF) of specified frequency is inputted and from which a direct current potential (DC) is outputted, comprises a detection/amplification circuit 210 which includes a voltage doubler wave-detector circuit 10 configured including a sensing diode Q1 (Tr34) for sensing the RF power, a differential amplifier including differential pair transistors Tr31 and Tr32, and a current mirror circuit. A base current of one Tr31 of the differential pair transistors is brought into substantial agreement with a DC component of a current flowing through the sensing diode Q1 (Tr34). A total of currents flowing through the differential pair transistors Tr31 and Tr32 is regulated to a substantially constant value by the current mirror circuit. Thus, the start signal output circuit which is small in size, high in sensitivity and low in power consumption can be realized.
摘要翻译：具有输入了特定频率的射频功率（RF）并从其输出直流电位（DC）的RF / DC转换电路的启动信号输出电路包括检测/放大电路210，其包括倍压器波检测器电路10被配置为包括用于感测RF功率的感测二极管Q 1（Tr 34），包括差分对晶体管Tr 31和Tr 32的差分放大器和电流镜电路。差分对晶体管的一个Tr 31的基极电流与流经感测二极管Q 1（Tr 34）的电流的直流分量基本一致。流过差分对晶体管Tr 31和Tr 32的总电流通过电流镜电路被调节到基本恒定的值。因此，可以实现尺寸小，灵敏度高，功耗低的启动信号输出电路。

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