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1. 发明申请

US20070236148A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20070236148A1
公开(公告)日：2007-10-11
申请号：US11756097
申请日：2007-05-31
申请人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , DongSheng Zhang , Michiko Nakaya , Norikazu Murakami
发明人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , DongSheng Zhang , Michiko Nakaya , Norikazu Murakami
IPC分类号： H01L21/3065
CPC分类号： H01J37/32174 , H01J37/321
摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.
摘要翻译：通过使用等离子体在目标基板上进行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。提供RF功率的RF电源通过匹配电路连接到第一或第二电极。匹配电路自动执行相对于RF功率的输入阻抗匹配。可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

2. 发明授权

US07527016B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07527016B2
公开(公告)日：2009-05-05
申请号：US10615915
申请日：2003-07-10
申请人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , Dongsheng Zhang , Michiko Nakaya , Norikazu Murakami
发明人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , Dongsheng Zhang , Michiko Nakaya , Norikazu Murakami
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32174 , H01J37/321
摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.
摘要翻译：通过使用等离子体在目标衬底上执行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。提供RF功率的RF电源通过匹配电路连接到第一或第二电极。匹配电路自动执行相对于RF功率的输入阻抗匹配。可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

3. 发明授权

US08251011B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08251011B2
公开(公告)日：2012-08-28
申请号：US11756097
申请日：2007-05-31
申请人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , DongSheng Zhang , Michiko Nakaya , Norikazu Murakami
发明人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , DongSheng Zhang , Michiko Nakaya , Norikazu Murakami
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32174 , H01J37/321
摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.
摘要翻译：通过使用等离子体在目标基板上进行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。提供RF功率的RF电源通过匹配电路连接到第一或第二电极。匹配电路自动执行相对于RF功率的输入阻抗匹配。可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

4. 发明授权

US08137471B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US08137471B2
公开(公告)日：2012-03-20
申请号：US12696323
申请日：2010-01-29
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： C23C16/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

5. 发明申请

US20120145324A1 PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：等离子体加工设备和方法
公开(公告)号：US20120145324A1
公开(公告)日：2012-06-14
申请号：US13396181
申请日：2012-02-14
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

6. 发明申请

US20090223933A1 PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：等离子体加工设备和方法
公开(公告)号：US20090223933A1
公开(公告)日：2009-09-10
申请号：US12465436
申请日：2009-05-13
申请人： Manabu Iwata , Chishio Koshimizu , Yohei Yamazawa
发明人： Manabu Iwata , Chishio Koshimizu , Yohei Yamazawa
IPC分类号： B44C1/22
CPC分类号： H01J37/32091 , H01J37/32183
摘要： A plasma processing apparatus for processing a substrate by using a plasma includes a processing chamber for accommodating and processing the substrate therein, a lower electrode for mounting the substrate thereon in the processing chamber, an upper electrode disposed to face the lower electrode in the processing chamber, a radio frequency power supply for supplying a radio frequency power to at least one of the lower and the upper electrode, to thereby generate the plasma between the lower and the upper electrode, and an electrical characteristic control unit for adjusting an impedance of a circuit at the side of an electrode to the plasma for a frequency of at least one radio frequency wave present in the processing chamber such that the circuit does not resonate.
摘要翻译：用于通过使用等离子体处理衬底的等离子体处理装置包括用于在其中容纳和处理衬底的处理室，用于将衬底安装在处理室中的下电极，设置成面对处理室中的下电极的上电极，用于向下电极和上电极中的至少一个提供射频电力的射频电源，从而在下电极和上电极之间产生等离子体;以及电特性控制单元，用于调节电路的阻抗在等离子体的电极的侧面处于存在于处理室中的至少一个射频的频率，使得电路不共振。

7. 发明授权

US08790490B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US08790490B2
公开(公告)日：2014-07-29
申请号：US13396181
申请日：2012-02-14
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

8. 发明授权

US07951262B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US07951262B2
公开(公告)日：2011-05-31
申请号：US11156561
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/3065
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

9. 发明申请

US20060037703A1 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20060037703A1
公开(公告)日：2006-02-23
申请号：US11156561
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/3065
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

10. 发明授权

US08603293B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US08603293B2
公开(公告)日：2013-12-10
申请号：US13186145
申请日：2011-07-19
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ohya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ohya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
摘要： A plasma processing apparatus includes a processing container, an exhaust unit, an exhaust plate, an RF power application unit connected to a second electrode but not connected to the first electrode and configured to apply an RF power with a single frequency, the second electrode being connected to no power supply that applies an RF power other than the RF power with the single frequency, a DC power supply connected to the first electrode but not connected to the second electrode, the first electrode being connected to no power supply that applies an RF power, and a conductive member within the process container grounded to release through plasma a current caused by the DC voltage, the conductive member supported by the first shield part and laterally protruding therefrom only at a position that is located, in a height-wise direction, between a mount face and the exhaust plate and below a bottom of a focus ring.
摘要翻译：等离子体处理装置包括处理容器，排气单元，排气板，连接到第二电极但未连接到第一电极并被配置为施加具有单一频率的RF功率的RF功率施加单元，第二电极为连接到没有施加除了单个频率的RF功率之外的RF功率的电源，连接到第一电极但没有连接到第二电极的直流电源，第一电极连接到不施加RF的电源功率和处理容器内的导电构件接地，以通过等离子体释放由直流电压引起的电流，导电构件由第一屏蔽部分支撑并且仅在位于高度方向的位置处侧向突出在安装面和排气板之间以及聚焦环的底部之下。

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