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1. 发明专利

JP2006026613A Adhesive applicator 有权
标题翻译：胶粘剂应用者
公开(公告)号：JP2006026613A
公开(公告)日：2006-02-02
申请号：JP2004213561
申请日：2004-07-21
申请人： Masashi Saito , 正志斉藤
发明人： SAITO MASASHI
IPC分类号： B05C17/00 , B43M11/06
摘要： PROBLEM TO BE SOLVED: To improve pasting accuracy by applying an adhesive between side end parts of 2 pieces of paper previously arranged to be placed one upon another as it is to paste 2 pieces of the papers and to improve the workability by facilitating the pasting.
SOLUTION: The adhesive applicator is provided with a guide means 20 for guiding 2 pieces of the paper K to relatively move in the plane direction of the papers K in a state in which the side edge parts 17 are placed one upon another and a coating means 30 for applying the adhesive N at least on one of the side edge parts 17 in the side edge parts 17 of 2 pieces of the paper K in a moving step. The guide means 20 comprises a pair of opposed guide plates 21 and a supporting part 28 for opening one end 22 of each guide plate 21 and for supporting another end 23 of each guide plate 21 so as to face 2 pieces of the paper K each other between guide plates 21. The coating means 30 is constituted of a holding part 31 provided on the supporting part 28 and for holding the adhesive N to be exposed between the guide plates and between 2 pieces of the paper K.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了通过在预先布置成彼此放置的2张纸的侧端部之间施加粘合剂来提供粘贴精度，因为它是粘贴2张纸，并且通过促进来提高加工性粘贴。解决方案：粘合剂施加器设置有引导装置20，用于在侧边缘部分17彼此放置的状态下引导2片纸张K在纸张K的平面方向上相对移动，并且用于在移动步骤中至少在两片纸K的侧边缘部分17中的一个侧边缘部分17上施加粘合剂N的涂布装置30。引导装置20包括一对相对的引导板21和用于打开每个引导板21的一个端部22的支撑部分28，并且用于支撑每个引导板21的另一个端部23，以便彼此面对2个纸张K. 涂布装置30由设置在支撑部28上的保持部31构成，用于保持要在导板之间和两片纸K之间露出的粘合剂N.（权利要求： C）2006，JPO＆NCIPI

2. 发明授权

US09313872B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US09313872B2
公开(公告)日：2016-04-12
申请号：US12913441
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Kazuki Denpoh , Jun Yamawaku , Masashi Saito
发明人： Yohei Yamazawa , Chishio Koshimizu , Kazuki Denpoh , Jun Yamawaku , Masashi Saito
IPC分类号： C23C16/00 , H01L21/306 , H05H1/46 , H01J37/32
CPC分类号： H01J37/3211 , C23C16/455 , C23C16/50 , H01J37/321 , H01J37/3244 , H05H1/46
摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.
摘要翻译：一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈形RF天线; 基板支撑单元，设置在处理室中，用于在其上安装待处理的目标基板; 处理气体供应单元，用于将所需的处理气体供应到处理室以对目标基板执行所需的等离子体处理; 以及RF电源单元，用于向RF天线提供RF功率，以通过处理室中的感应耦合产生处理气体的等离子体。该装置还包括一个浮动线圈，其浮动并布置在处理室外部的位置处，浮动线圈将通过电磁感应与RF天线耦合; 以及设置在浮动线圈的环路中的电容器。

3. 发明授权

US09253867B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US09253867B2
公开(公告)日：2016-02-02
申请号：US12913183
申请日：2010-10-27
申请人： Yohei Yamazawa , Masashi Saito , Kazuki Denpoh , Chishio Koshimizu , Jun Yamawaku
发明人： Yohei Yamazawa , Masashi Saito , Kazuki Denpoh , Chishio Koshimizu , Jun Yamawaku
IPC分类号： H01L21/306 , C23C16/00 , H05H1/46 , H01J37/32
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32174 , H01J37/3244 , H01J2237/334 , H01L21/67069 , H01L21/6831 , H05H1/46
摘要： A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.
摘要翻译：一种等离子体处理装置，包括：具有电介质窗的可抽空处理室; 基板支撑单元，设置在处理室中，用于在其上安装目标基板; 处理气体供给单元，用于向所述处理室供给期望的处理气体，以在所述目标基板上进行等离子体处理; 设置在电介质窗口上的第一RF天线，用于通过处理室中的感应耦合产生等离子体; 以及用于向第一RF天线提供RF功率的第一RF电源单元。第一RF天线包括设置在电介质窗口上或电介质窗上方的电连接到第一RF电源单元的初级线圈; 以及次级线圈，其被设置成使得线圈通过其间的电磁感应彼此耦合，同时布置成比初级线圈更靠近电介质窗口的底表面。

4. 发明授权

US08741097B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08741097B2
公开(公告)日：2014-06-03
申请号：US12913162
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku
发明人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32146 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.
摘要翻译：一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 设置在所述处理室中的基板支撑单元; 处理气体供应单元; RF电源单元，用于向RF天线提供RF功率以通过处理室中的感应耦合产生处理气体的等离子体，所述RF功率具有用于处理气体的RF放电的适当频率; 校正线圈，设置在所述处理室外侧的位置处，所述校正线圈将通过电磁感应与所述RF天线耦合，用于控制所述处理室中的所述衬底上的等离子体密度分布; 设置在所述校正线圈的环路中的开关装置; 以及用于通过脉冲宽度调制以期望的占空比开关控制开关装置的开关控制单元。

5. 发明授权

US08696580B2 Arteriosclerosis evaluating apparatus 有权
标题翻译：动脉硬化评估仪
公开(公告)号：US08696580B2
公开(公告)日：2014-04-15
申请号：US13037028
申请日：2011-02-28
申请人： Mami Matsukawa , Yoshiaki Watanabe , Masashi Saito , Takaaki Asada , Mio Furuya
发明人： Mami Matsukawa , Yoshiaki Watanabe , Masashi Saito , Takaaki Asada , Mio Furuya
IPC分类号： A61B5/02
CPC分类号： A61B5/0285 , A61B5/02007 , A61B5/6822 , A61B8/06
摘要： The disclosed is an arteriosclerosis evaluating apparatus capable of easily separating pulse wave data detected at one measurement site into an incident wave and a reflected wave and capable of easily determining and evaluating the degree of arteriosclerosis. The pulse wave transmitted through an artery is detected at one site of a living body by a pulse wave detection device, and the detected pulse wave is fitted with a fitting function by a breakdown device so that the detected pulse wave can be broken down into an incident wave and a reflected wave. The degree of arteriosclerosis is evaluated from the amplitude intensities (i.e., peak intensities) of the incident wave and the reflected wave broken down from the pulse wave.
摘要翻译：所公开的是一种动脉硬化评估装置，其能够容易地将在一个测量部位检测到的脉波数据分离成入射波和反射波，并且能够容易地确定和评估动脉硬化程度。通过脉搏检测装置在生物体的一个位置处检测到通过动脉传递的脉波，并且通过击穿装置将检测出的脉搏波装配到拟合功能，使得检测出的脉波可以分解为入射波和反射波。从入射波的振幅强度（即峰值强度）和从脉搏波分解的反射波来评价动脉硬化的程度。

6. 发明授权

US08608903B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08608903B2
公开(公告)日：2013-12-17
申请号：US12913135
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
发明人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.
摘要翻译：一种等离子体处理装置，包括：包括电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 基板支撑单元，设置在所述室中，用于在其上安装目标基板; 处理气体供应单元，用于将处理气体供应到所述室; 以及RF电源单元，用于向RF天线提供RF功率，以通过腔室中的感应耦合产生处理气体的等离子体。该装置还包括校正线圈，其设置在室外的位置处，其中校正线圈将通过电磁感应与RF天线耦合，用于控制腔室中的等离子体密度分布; 以及天线线圈距离控制单元，用于在支撑基本上与RF天线并联的校正线圈的同时控制RF天线和校正线圈之间的距离。

7. 发明授权

US08603293B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US08603293B2
公开(公告)日：2013-12-10
申请号：US13186145
申请日：2011-07-19
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ohya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ohya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
摘要： A plasma processing apparatus includes a processing container, an exhaust unit, an exhaust plate, an RF power application unit connected to a second electrode but not connected to the first electrode and configured to apply an RF power with a single frequency, the second electrode being connected to no power supply that applies an RF power other than the RF power with the single frequency, a DC power supply connected to the first electrode but not connected to the second electrode, the first electrode being connected to no power supply that applies an RF power, and a conductive member within the process container grounded to release through plasma a current caused by the DC voltage, the conductive member supported by the first shield part and laterally protruding therefrom only at a position that is located, in a height-wise direction, between a mount face and the exhaust plate and below a bottom of a focus ring.
摘要翻译：等离子体处理装置包括处理容器，排气单元，排气板，连接到第二电极但未连接到第一电极并被配置为施加具有单一频率的RF功率的RF功率施加单元，第二电极为连接到没有施加除了单个频率的RF功率之外的RF功率的电源，连接到第一电极但没有连接到第二电极的直流电源，第一电极连接到不施加RF的电源功率和处理容器内的导电构件接地，以通过等离子体释放由直流电压引起的电流，导电构件由第一屏蔽部分支撑并且仅在位于高度方向的位置处侧向突出在安装面和排气板之间以及聚焦环的底部之下。

8. 发明申请

US20120321549A1 METHOD FOR PRODUCING HYDROGEN AIMED AT STORAGE AND TRANSPORTATION 有权
标题翻译：用于生产存储和运输氢的方法
公开(公告)号：US20120321549A1
公开(公告)日：2012-12-20
申请号：US13580643
申请日：2011-03-24
申请人： Yoshimi Okada , Masashi Saito , Shuhei Wakamatsu , Mitsunori Shimura
发明人： Yoshimi Okada , Masashi Saito , Shuhei Wakamatsu , Mitsunori Shimura
IPC分类号： C01B3/02 , C01B3/26
CPC分类号： H01M8/04216 , B01J21/12 , B01J23/755 , C01B3/0015 , C01B3/32 , C01B2203/0283 , C01B2203/0415 , C01B2203/043 , C01B2203/0445 , C01B2203/0475 , F17C11/005 , H01M8/0618 , H01M8/065 , Y02E60/321 , Y02E60/328 , Y02P30/30
摘要： Provided is a method for producing hydrogen aimed at storage and transportation, by which hydrogen for storage and transportation that is necessary for smoothly performing an organic chemical hydride method can be industrially produced efficiently at low cost. The method is a method for producing hydrogen aimed at storage and transportation in an organic chemical hydride method, in which: the hydrogenation process of an aromatic compound uses, as a hydrogen source for the reaction of the aromatic compound, a reaction gas is produced by a reforming reaction and adjusted a hydrogen concentration from 30 to 70 vol % by a shift reaction; and a hydrogenated aromatic compound is separated from a reaction mixture obtained in the hydrogenation process, which is followed by purification.
摘要翻译：本发明提供一种用于生产用于储存和运输的氢的方法，通过该方法可以有效地以低成本工业生产有机化学氢化物方法顺利进行所需的储存和运输用氢。该方法是在有机化学氢化物方法中制备用于储存和输送的氢的方法，其中：芳族化合物的氢化方法使用作为芳族化合物的反应的氢源，反应气体由重整反应，通过转移反应将氢浓度调整为30〜70体积％并从氢化过程中获得的反应混合物中分离氢化芳族化合物，然后进行纯化。

9. 发明授权

US08194183B2 Imaging device 有权
标题翻译：成像设备
公开(公告)号：US08194183B2
公开(公告)日：2012-06-05
申请号：US12664871
申请日：2008-07-14
申请人： Masashi Saito
发明人： Masashi Saito
IPC分类号： H04N5/225
CPC分类号： G02B7/102 , H04N5/2254 , H04N5/2257
摘要： Provided is an imaging device which simplifies an assembling adjustment so as to reduce the manufacturing time and cost, wherein second lens L2 driven by actuator 30 is brought into contact with first lens L1 and third lens L3 so that a hyper-focal position or an infinite position as a reference focal position, and close-up position are accurately positioned, that is, it is possible to perform assembling without adjustment and effectively reduce the number of manufacturing steps.
摘要翻译：提供了一种成像装置，其简化组装调整以减少制造时间和成本，其中由致动器30驱动的第二透镜L2与第一透镜L1和第三透镜L3接触，使得超焦点位置或无限大位置作为参考焦点位置，并且特写位置被精确地定位，即，可以不调整地进行组装，并且有效地减少制造步骤的数量。

10. 发明申请

US20110303362A1 PLASMA PROCESSING APPARATUS AND PROCESSING GAS SUPPLY STRUCTURE THEREOF 有权
标题翻译：等离子体加工设备及其加工气体供应结构
公开(公告)号：US20110303362A1
公开(公告)日：2011-12-15
申请号：US13159585
申请日：2011-06-14
申请人： Masashi SAITO
发明人： Masashi SAITO
IPC分类号： C23F1/08 , H01L21/00
CPC分类号： H01J37/3244 , C23C16/45563 , H01J37/321 , H01J37/32449 , H01L21/67069
摘要： There is provided a plasma processing apparatus for performing a plasma process on a substrate mounted on a mounting table in a processing chamber by generating inductively coupled plasma within the processing chamber by applying a high frequency power to a high frequency antenna. The apparatus includes a multiple number of gas nozzles protruding from a sidewall of the processing chamber toward a center of the processing chamber in a space above the mounting table, and each gas nozzle has a gas discharge hole at a leading end of the gas nozzle in a protruding direction and a gas discharge hole at a sidewall of the gas nozzle. Further, the apparatus includes a rotation device configured to rotate each of the gas nozzles on each central axis of the gas nozzles and each central axis is extended in the protruding direction of each of the gas nozzles.
摘要翻译：提供了一种等离子体处理装置，用于通过对高频天线施加高频功率，通过在处理室内产生感应耦合等离子体，在安装在处理室中的安装台上的基板上进行等离子体处理。该装置包括多个气体喷嘴，其从处理室的侧壁向安装台上方的空间朝向处理室的中心突出，并且每个气体喷嘴在气体喷嘴的前端具有排气孔突出方向和在气体喷嘴的侧壁处的气体排出孔。此外，该装置包括旋转装置，其构造成使气体喷嘴的每个中心轴线上的每个气体喷嘴旋转，并且每个中心轴线在每个气体喷嘴的突出方向上延伸。

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