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1. 发明申请

US20070236148A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20070236148A1
公开(公告)日：2007-10-11
申请号：US11756097
申请日：2007-05-31
申请人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , DongSheng Zhang , Michiko Nakaya , Norikazu Murakami
发明人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , DongSheng Zhang , Michiko Nakaya , Norikazu Murakami
IPC分类号： H01L21/3065
CPC分类号： H01J37/32174 , H01J37/321
摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.
摘要翻译：通过使用等离子体在目标基板上进行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。提供RF功率的RF电源通过匹配电路连接到第一或第二电极。匹配电路自动执行相对于RF功率的输入阻抗匹配。可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

2. 发明授权

US07527016B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07527016B2
公开(公告)日：2009-05-05
申请号：US10615915
申请日：2003-07-10
申请人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , Dongsheng Zhang , Michiko Nakaya , Norikazu Murakami
发明人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , Dongsheng Zhang , Michiko Nakaya , Norikazu Murakami
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32174 , H01J37/321
摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.
摘要翻译：通过使用等离子体在目标衬底上执行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。提供RF功率的RF电源通过匹配电路连接到第一或第二电极。匹配电路自动执行相对于RF功率的输入阻抗匹配。可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

3. 发明授权

US08251011B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08251011B2
公开(公告)日：2012-08-28
申请号：US11756097
申请日：2007-05-31
申请人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , DongSheng Zhang , Michiko Nakaya , Norikazu Murakami
发明人： Yohei Yamazawa , Manabu Iwata , Chishio Koshimizu , Fumihiko Higuchi , Akitaka Shimizu , Asao Yamashita , Nobuhiro Iwama , Tsutomu Higashiura , DongSheng Zhang , Michiko Nakaya , Norikazu Murakami
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32174 , H01J37/321
摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.
摘要翻译：通过使用等离子体在目标基板上进行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。提供RF功率的RF电源通过匹配电路连接到第一或第二电极。匹配电路自动执行相对于RF功率的输入阻抗匹配。可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

4. 发明授权

US08751196B2 Abnormality detection system, abnormality detection method, recording medium, and substrate processing apparatus 有权
标题翻译：异常检测系统，异常检测方法，记录介质和基板处理装置
公开(公告)号：US08751196B2
公开(公告)日：2014-06-10
申请号：US13381367
申请日：2010-06-28
申请人： Tsuyoshi Moriya , Yasutoshi Umehara , Yuki Kataoka , Michiko Nakaya
发明人： Tsuyoshi Moriya , Yasutoshi Umehara , Yuki Kataoka , Michiko Nakaya
IPC分类号： G06F15/00 , G01N29/44
CPC分类号： A61K8/25 , A61K8/022 , A61K8/21 , A61K8/24 , A61K8/27 , A61Q11/00 , C03C3/062 , C03C3/097 , C03C3/112 , C03C4/0007 , C03C4/0021 , C03C4/0035 , C03C12/00 , H01J37/32935 , H01J37/3299 , H01L21/67288
摘要： Disclosed is an abnormality detection system that accurately detects abnormalities that arise in a device. The abnormality detection system 100, which detects abnormalities that arise in a plasma processing device 2, is provided with: a plurality of ultrasonic sensors 41, which detects acoustic emissions (AE), which cause abnormalities to arise; a distributor 65, which distributes each output signal from the ultrasonic sensors 41 into a first signal and a second signal; a trigger 52, which samples the first signal at, for example, 10 kHz, and generates a trigger signal when predetermined characteristics are detected; a trigger generation time counter 54, which receives trigger signals and determines the time of trigger generation; a data logger board 55, which creates sampling data from sampling the second signal at, for example, 1 MHz; and a PC 50, which analyzes abnormalities arising in the plasma processing device 2 by means of performing a waveform analysis of data from the sampling data, said data corresponding to a set time period using the time of trigger generation determined by the trigger generation time counter 54 as a benchmark.
摘要翻译：公开了一种异常检测系统，其能够精确地检测装置中产生的异常。检测等离子体处理装置2中出现的异常的异常检测系统100设置有：检测引起异常的声发射（AE）的多个超声波传感器41; 分配器65，其将来自超声波传感器41的每个输出信号分配成第一信号和第二信号; 触发器52，其以例如10kHz对第一信号进行采样，并且当检测到预定特性时产生触发信号; 触发生成时间计数器54，其接收触发信号并确定触发器生成的时间; 数据记录板55，其以例如1MHz对第二信号进行采样创建采样数据; 以及PC50，其通过对来自采样数据的数据进行波形分析来分析等离子体处理装置2中出现的异常，所述数据对应于由触发生成时间计数器确定的触发生成时间的设定时间段 54作为基准。

5. 发明申请

US20070202701A1 PLASMA ETCHING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体蚀刻装置和方法
公开(公告)号：US20070202701A1
公开(公告)日：2007-08-30
申请号：US11678833
申请日：2007-02-26
申请人： Michiko Nakaya , Koji Maruyama
发明人： Michiko Nakaya , Koji Maruyama
IPC分类号： H01L21/302 , G06F19/00 , H01L21/306
CPC分类号： H01L21/3065 , H01L21/32137
摘要： A plasma etching apparatus includes an evacuable processing chamber for performing a plasma etching process on a target object; a mounting table for mounting thereon the target object in the processing chamber; and a shower head facing the mounting table, for introducing a processing gas for generating a plasma to the processing chamber. Further, the apparatus includes a ring-shaped protrusion protruded from a bottom surface of the shower head toward the mounting table; and a plurality of gas introducing openings inclusively arranged in an area smaller than the target object in an inner central portion of the ring-shaped protrusion on the bottom surface of the shower head.
摘要翻译：等离子体蚀刻装置包括用于对目标物体进行等离子体蚀刻处理的可抽空处理室; 用于将目标物体安装在处理室中的安装台; 以及面向安装台的淋浴喷头，用于将用于产生等离子体的处理气体引入处理室。此外，该装置包括从淋浴头的底面向安装台突出的环状突起; 以及在所述花洒头的底面上的所述环状突起的内部中央部分中包含多个气体导入孔，所述多个气体导入孔包含在比所述目标物体小的区域。

6. 发明授权

US08263499B2 Plasma processing method and computer readable storage medium 有权
标题翻译：等离子体处理方法和计算机可读存储介质
公开(公告)号：US08263499B2
公开(公告)日：2012-09-11
申请号：US12414920
申请日：2009-03-31
申请人： Masanobu Honda , Michiko Nakaya
发明人： Masanobu Honda , Michiko Nakaya
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31144 , H01J37/32027 , H01J37/32091 , H01L21/0273 , H01L21/31116
摘要： A plasma etching method includes disposing first electrode and second electrodes; preparing a part in a processing chamber; supporting a substrate by the second electrode to face the first electrode; vacuum-evacuating the processing chamber; supplying a first processing gas containing an etchant gas into a processing space between the first electrode and the second electrode; generating a plasma of the first processing gas in the processing space by applying a radio frequency power to the first electrode or the second electrode; and etching a film on the substrate by using the plasma. Further, a resist modification process includes vacuum-evacuating the processing chamber; supplying a second processing gas into the processing space; generating a plasma; and applying a negative DC voltage to the part, the part being disposed away from the substrate in the processing chamber and injecting electrons discharged from the part into the resist pattern on the substrate.
摘要翻译：等离子体蚀刻方法包括：配置第一电极和第二电极; 在处理室中准备一部分; 通过所述第二电极支撑衬底以面对所述第一电极; 真空抽真空处理室; 将含有蚀刻剂气体的第一处理气体供应到第一电极和第二电极之间的处理空间中; 通过向所述第一电极或所述第二电极施加射频功率来在所述处理空间中产生所述第一处理气体的等离子体; 并通过使用等离子体在基板上蚀刻膜。此外，抗蚀剂修饰工艺包括对处理室进行真空抽真空; 将第二处理气体供应到所述处理空间中; 产生等离子体以及向所述部分施加负的DC电压，所述部分远离处理室中的衬底设置，并将从部件排出的电子注入到衬底上的抗蚀剂图案中。

7. 发明授权

US07902078B2 Processing method and plasma etching method 有权
标题翻译：加工方法和等离子体蚀刻方法
公开(公告)号：US07902078B2
公开(公告)日：2011-03-08
申请号：US11674764
申请日：2007-02-14
申请人： Michiko Nakaya
发明人： Michiko Nakaya
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3065 , H01J37/3266 , H01J2237/334 , H01L21/3081 , H01L21/31116 , H01L21/31144
摘要： A processing method includes a silicon oxide etching process of performing a plasma etching on a target layer mainly made up of silicon, a silicon oxide layer formed on the target layer and a target object having a previously patterned resist layer formed on the silicon oxide layer, the plasma etching of the silicon oxide layer being performed by using the resist layer as a mask; a deposits removing process of removing deposits generated in the silicon oxide etching process and stuck to the target object; and a silicon etching process of performing a plasma etching on the target layer by a plasma generated from a processing gas containing SF6, O2 and SiF4 while using the silicon oxide layer as a mask.
摘要翻译：一种处理方法包括对主要由硅构成的目标层，形成在目标层上的氧化硅层和在氧化硅层上形成预先构图的抗蚀剂层的目标物体进行等离子体蚀刻的氧化硅蚀刻工序，通过使用抗蚀剂层作为掩模来进行氧化硅层的等离子体蚀刻; 去除沉积物，去除在氧化硅蚀刻工艺中产生的沉积物并粘附到目标物体上; 以及利用由含有SF 6，O 2，SiF 4的处理气体产生的等离子体，在使用氧化硅层作为掩模的情况下，在目标层上进行等离子体蚀刻的硅蚀刻工序。

8. 发明申请

US20120109582A1 ABNORMALITY DETECTION SYSTEM, ABNORMALITY DETECTION METHOD, AND RECORDING MEDIUM 有权
标题翻译：异常检测系统，异常检测方法和记录介质
公开(公告)号：US20120109582A1
公开(公告)日：2012-05-03
申请号：US13381367
申请日：2010-06-28
申请人： Tsuyoshi Moriya , Yasutoshi Umehara , Yuki Kataoka , Michiko Nakaya
发明人： Tsuyoshi Moriya , Yasutoshi Umehara , Yuki Kataoka , Michiko Nakaya
IPC分类号： G06F15/00 , G01N29/44
CPC分类号： A61K8/25 , A61K8/022 , A61K8/21 , A61K8/24 , A61K8/27 , A61Q11/00 , C03C3/062 , C03C3/097 , C03C3/112 , C03C4/0007 , C03C4/0021 , C03C4/0035 , C03C12/00 , H01J37/32935 , H01J37/3299 , H01L21/67288
摘要： Disclosed is an abnormality detection system that accurately detects abnormalities that arise in a device. The abnormality detection system 100, which detects abnormalities that arise in a plasma processing device 2, is provided with: a plurality of ultrasonic sensors 41, which detects acoustic emissions (AE), which cause abnormalities to arise; a distributor 65, which distributes each output signal from the ultrasonic sensors 41 into a first signal and a second signal; a trigger 52, which samples the first signal at, for example, 10 kHz, and generates a trigger signal when predetermined characteristics are detected; a trigger generation time counter 54, which receives trigger signals and determines the time of trigger generation; a data logger board 55, which creates sampling data from sampling the second signal at, for example, 1 MHz; and a PC 50, which analyzes abnormalities arising in the plasma processing device 2 by means of performing a waveform analysis of data from the sampling data, said data corresponding to a set time period using the time of trigger generation determined by the trigger generation time counter 54 as a benchmark.
摘要翻译：公开了一种异常检测系统，其能够精确地检测装置中产生的异常。检测等离子体处理装置2中出现的异常的异常检测系统100设置有：检测引起异常的声发射（AE）的多个超声波传感器41; 分配器65，其将来自超声波传感器41的每个输出信号分配成第一信号和第二信号; 触发器52，其以例如10kHz对第一信号进行采样，并且当检测到预定特性时产生触发信号; 触发生成时间计数器54，其接收触发信号并确定触发器生成的时间; 数据记录板55，其以例如1MHz对第二信号进行采样创建采样数据; 以及PC50，其通过对来自采样数据的数据进行波形分析来分析等离子体处理装置2中出现的异常，所述数据对应于由触发生成时间计数器确定的触发生成时间的设定时间段 54作为基准。

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