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1. 发明申请

US20110214815A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20110214815A1
公开(公告)日：2011-09-08
申请号：US13113330
申请日：2011-05-23
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/3065
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

2. 发明授权

US07988816B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US07988816B2
公开(公告)日：2011-08-02
申请号：US11157061
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
摘要： A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.
摘要翻译：等离子体蚀刻装置包括上电极和下电极，在其间产生处理气体的等离子体以在晶片W上进行等离子体蚀刻。该装置还包括设置在晶片周围的冷却环，设置在冷却周围的校正环环和直接连接到校正环的可变直流电源，所述直流电压被预设为向校正环提供相对于地电位的负偏压，用于吸引等离子体中的离子并将校正环的温度增加到补偿由于冷却环导致的目标基板的边缘附近的空间的温度的降低。

3. 发明授权

US07951262B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US07951262B2
公开(公告)日：2011-05-31
申请号：US11156561
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/3065
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

4. 发明申请

US20060037703A1 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20060037703A1
公开(公告)日：2006-02-23
申请号：US11156561
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/3065
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

5. 发明授权

US08603293B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US08603293B2
公开(公告)日：2013-12-10
申请号：US13186145
申请日：2011-07-19
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ohya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ohya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
摘要： A plasma processing apparatus includes a processing container, an exhaust unit, an exhaust plate, an RF power application unit connected to a second electrode but not connected to the first electrode and configured to apply an RF power with a single frequency, the second electrode being connected to no power supply that applies an RF power other than the RF power with the single frequency, a DC power supply connected to the first electrode but not connected to the second electrode, the first electrode being connected to no power supply that applies an RF power, and a conductive member within the process container grounded to release through plasma a current caused by the DC voltage, the conductive member supported by the first shield part and laterally protruding therefrom only at a position that is located, in a height-wise direction, between a mount face and the exhaust plate and below a bottom of a focus ring.
摘要翻译：等离子体处理装置包括处理容器，排气单元，排气板，连接到第二电极但未连接到第一电极并被配置为施加具有单一频率的RF功率的RF功率施加单元，第二电极为连接到没有施加除了单个频率的RF功率之外的RF功率的电源，连接到第一电极但没有连接到第二电极的直流电源，第一电极连接到不施加RF的电源功率和处理容器内的导电构件接地，以通过等离子体释放由直流电压引起的电流，导电构件由第一屏蔽部分支撑并且仅在位于高度方向的位置处侧向突出在安装面和排气板之间以及聚焦环的底部之下。

6. 发明申请

US20110272097A1 PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：等离子体加工设备和方法
公开(公告)号：US20110272097A1
公开(公告)日：2011-11-10
申请号：US13186145
申请日：2011-07-19
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23F1/08
CPC分类号： H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
摘要： A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.
摘要翻译：等离子体蚀刻装置包括上电极和下电极，在其间产生处理气体的等离子体以在晶片W上进行等离子体蚀刻。该装置还包括设置在晶片周围的冷却环，设置在冷却周围的校正环环和直接连接到校正环的可变直流电源，所述直流电压被预设为向校正环提供相对于地电位的负偏压，用于吸引等离子体中的离子并将校正环的温度增加到补偿由于冷却环导致的目标基板的边缘附近的空间的温度的降低。

7. 发明申请

US20060066247A1 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20060066247A1
公开(公告)日：2006-03-30
申请号：US11157061
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： H01J7/24
CPC分类号： H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
摘要： A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a variable DC power supply to apply a DC voltage to the upper electrode, so as to cause the absolute value of a self-bias voltage on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode side to generate predetermined pressed plasma.
摘要翻译：等离子体蚀刻装置包括上电极和下电极，在其间产生处理气体的等离子体，以对晶片W进行等离子体蚀刻。该装置还包括用于向上电极施加直流电压的可变直流电源，使得其表面上的自偏压的绝对值足够大以在表面上获得合适的溅射效应，并且增加上电极侧的等离子体鞘长度以产生预定的按压等离子体。

8. 发明授权

US08339240B2 Semiconductor element, biometric authentication method, biometric authentication system and mobile terminal 有权
标题翻译：半导体元件，生物认证方法，生物识别系统和移动终端
公开(公告)号：US08339240B2
公开(公告)日：2012-12-25
申请号：US12503998
申请日：2009-07-16
申请人： Makoto Aikawa , Shoko Hatanaka , Takeshi Inoue , Hiroki Yamazaki
发明人： Makoto Aikawa , Shoko Hatanaka , Takeshi Inoue , Hiroki Yamazaki
IPC分类号： G06K9/00
CPC分类号： G07C9/00087 , G06Q20/341 , G06Q20/40145 , G07F7/1008 , G07F7/1083
摘要： A semiconductor element or mobile terminal stores a user's biometric information pattern used for execution of a biometric authentication process and the residual number of trials indicating the number of allowed failures in the biometric authentication process, sends processing data to an external device so that the external device can use the processing data when the external device executes part of the biometric authentication process, and decreases the residual number of trials by a predetermined value while the processing data is output to the external device after start of communication with the external device.
摘要翻译：半导体元件或移动终端存储用于生物认证处理的执行的用户的生物体信息模式和表示生物体认证处理中允许的失败次数的剩余次数，将处理数据发送到外部设备，使得外部设备当外部设备执行部分生物认证处理时，可以使用处理数据，并且在开始与外部设备通信之后将处理数据输出到外部设备，将剩余的试验次数减少预定值。

9. 发明申请

US20090305254A1 Method and Apparatus for Assaying Test Substance in Sample 失效
标题翻译：样品中测试物质的测定方法和装置
公开(公告)号：US20090305254A1
公开(公告)日：2009-12-10
申请号：US12162008
申请日：2007-01-24
申请人： Koji Sode , Kazunori Ikebukuro , Hiroki Yamazaki
发明人： Koji Sode , Kazunori Ikebukuro , Hiroki Yamazaki
IPC分类号： C12Q1/68 , C12M1/34
CPC分类号： G01N33/5308 , C12Q1/6825 , G01N33/58 , C12Q2565/628 , C12Q2565/518 , C12Q2525/205
摘要： Disclosed are a method for assaying a target substance in a sample and an apparatus for the method. The method can specifically assay the target substance in the sample without using any antibody against the target substance. The assaying method includes simultaneously or successively bringing a labeled aptamer, the target substance in the sample and a solid phase into contact together, and then measuring the label of the aptamer which has not been bound on the solid phase. The labeled aptamer has a property of binding to the target substance. The solid phase carries an oligonucleotide immobilized on it in an excess amount relative to the target substance. The oligonucleotide is hybridizable with the labeled aptamer when the labeled aptamer is in a state that it is not bound to the target substance, but is not hybridizable with the labeled aptamer when the labeled aptamer is in a state that it is bound to the target substance.
摘要翻译：公开了用于测定样品中的目标物质的方法和该方法的装置。该方法可以特异性地测定样品中的目标物质，而不使用针对目标物质的任何抗体。测定方法包括同时或连续地将标记的适体，样品中的目标物质和固相接触在一起，然后测量未结合在固相上的适体的标记。标记的适体具有与靶物质结合的性质。固相携带相对于目标物质过量固定在其上的寡核苷酸。当标记的适体处于与靶物质不结合的状态下，当标记的适体处于与靶物质结合的状态时，寡核苷酸可与标记的适配子杂交，但与标记的适体不可杂交。

10. 发明授权

US07570567B2 Multi-layered holographic read-only memory and data retrieval method 失效
标题翻译：多层全息只读存储器和数据检索方法
公开(公告)号：US07570567B2
公开(公告)日：2009-08-04
申请号：US10956467
申请日：2004-09-30
申请人： Shougo Yagi , Tadayuki Imai , Michio Ono , Hiroki Yamazaki , Haruki Kozawaguchi
发明人： Shougo Yagi , Tadayuki Imai , Michio Ono , Hiroki Yamazaki , Haruki Kozawaguchi
IPC分类号： G11B7/00
CPC分类号： G11B7/0065 , G03H2001/2226 , G03H2001/2615 , G11B7/24
摘要： An inexpensive multi-layered holographic read-only memory having a large capacity is provided. In the memory in which single-mode slab waveguides are multi-layered, a periodic scattering center whose period approximately agrees with the period of the guided mode is provided in at least one of a core layer and a clad layer in each waveguide so that a guided wave in the waveguide is diffracted by the periodic scattering center to the outside of the waveguide and a holographic image is generated.
摘要翻译：提供了一种具有大容量的便宜的多层全息只读存储器。在单模平板波导为多层的存储器中，在每个波导管中的芯层和覆层中的至少一个中提供周期大约与引导周期大致相同的周期性散射中心，使得波导中的导波被周期性散射中心衍射到波导的外部，并且产生全息图像。

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