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1. 发明授权

US07372156B2 Method to fabricate aligned dual damascene openings 有权
标题翻译：制造对准双镶嵌开口的方法
公开(公告)号：US07372156B2
公开(公告)日：2008-05-13
申请号：US11174805
申请日：2005-07-05
申请人： Yeow Kheng Lim , Wuping Liu , Tae Jong Lee , Bei Chao Zhang , Juan Boon Tan , Alan Cuthbertson , Chin Chuan Neo
发明人： Yeow Kheng Lim , Wuping Liu , Tae Jong Lee , Bei Chao Zhang , Juan Boon Tan , Alan Cuthbertson , Chin Chuan Neo
IPC分类号： H01L29/40
CPC分类号： H01L21/76807 , H01L21/76829 , H01L21/76834
摘要： An aligned dual damascene opening structure, comprising the following. A structure having a metal structure formed thereover. A patterned layer stack over the metal structure; the layer stack comprising, in ascending order: a patterned bottom etch stop layer; a patterned lower dielectric material layer; a patterned middle etch stop layer; and a patterned middle dielectric material layer; the lower and middle dielectric layers being comprised of the same material. An upper trench opening in the patterned bottom etch stop layer and the patterned lower dielectric material layer; and a lower via opening in the patterned middle etch stop layer and the patterned middle dielectric material layer. The lower via opening being in communication with the upper trench opening. Wherein the upper trench opening and the lower via opening comprise an aligned dual damascene opening.
摘要翻译：对准的双镶嵌开口结构，包括以下。具有形成在其上的金属结构的结构。金属结构上的图案层叠层; 所述层堆叠按升序包括：图案化的底部蚀刻停止层; 图案化的下介电材料层; 图案化的中间蚀刻停止层; 和图案化的中间介电材料层; 下部和中间介电层由相同的材料组成。在图案化的底部蚀刻停止层和图案化的下部介电材料层中的上部沟槽开口; 以及图案化的中间蚀刻停止层和图案化的中间介电材料层中的下通孔开口。下通道开口与上沟槽开口连通。其中上沟槽开口和下通孔开口包括对准的双镶嵌开口。

2. 发明授权

US06967156B2 Method to fabricate aligned dual damascene openings 有权
标题翻译：制造对准双镶嵌开口的方法
公开(公告)号：US06967156B2
公开(公告)日：2005-11-22
申请号：US10690998
申请日：2003-10-22
申请人： Yeow Kheng Lim , Wuping Liu , Tae Jong Lee , Bei Chao Zhang , Juan Boon Tan , Alan Cuthbertson , Chin Chuan Neo
发明人： Yeow Kheng Lim , Wuping Liu , Tae Jong Lee , Bei Chao Zhang , Juan Boon Tan , Alan Cuthbertson , Chin Chuan Neo
IPC分类号： H01L21/4763 , H01L21/768 , H01L29/06
CPC分类号： H01L21/76807 , H01L21/76829 , H01L21/76834
摘要： A method of forming an aligned dual damascene opening, comprising including the following sequential steps. A layer stack is formed over the metal structure. The layer stack comprises, in ascending order: a bottom etch stop layer; a lower dielectric material layer; a middle etch stop layer; a middle dielectric material layer; and an upper dielectric layer. A patterned mask layer is formed over the patterned upper dielectric layer leaving exposed opposing portions of the patterned upper dielectric layer. The middle dielectric material layer is patterned to form an opening therein using the patterned mask layer and the exposed portions of the upper dielectric layer as masks. Simultaneously patterning the patterned middle dielectric material layer using the patterned upper dielectric layer as a mask to form an inchoate upper trench opening; and the lower dielectric material layer using the patterned mask layer and the patterned middle etch stop layer as masks to form an inchoate lower via opening aligned with the inchoate upper trench opening.
摘要翻译：一种形成对准的双镶嵌开口的方法，包括以下顺序步骤。在金属结构上形成层叠。层叠层按升序包括底蚀刻停止层; 下介电材料层; 中间蚀刻停止层; 中间介电材料层; 和上介电层。图案化的掩模层形成在图案化的上介电层上，留下图案化的上介电层的暴露的相对部分。使用图案化掩模层和上介电层的暴露部分作为掩模，将中介电材料层图案化以形成开口。使用图案化的上电介质层作为掩模，同时对图案化的中间介电材料层进行图案化以形成初始上沟槽开口; 并且使用图案化掩模层和图案化的中间蚀刻停止层作为掩模的下部电介质材料层形成与前述上部沟槽开口对准的开口下部通孔。

3. 发明授权

US06995087B2 Integrated circuit with simultaneous fabrication of dual damascene via and trench 有权
标题翻译：集成电路，同时制造双镶嵌通孔和沟槽
公开(公告)号：US06995087B2
公开(公告)日：2006-02-07
申请号：US10328512
申请日：2002-12-23
申请人： Wuping Liu , Juan Boon Tan , Bei Chao Zhang , Alan Cuthbertson
发明人： Wuping Liu , Juan Boon Tan , Bei Chao Zhang , Alan Cuthbertson
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/76811 , H01L21/76813
摘要： An integrated circuit manufacturing method includes providing a base, forming a first conductor, forming a first barrier layer, forming a first dielectric layer, and forming a masking layer. The method further including forming a first via opening in the masking layer, forming a first trench opening in the masking layer, and simultaneously forming a second via opening in a layer under the masking layer, and forming a second trench opening through the masking layer and in the layer under the masking layer and simultaneously forming a third via opening in another layer under the masking layer. The method further including removing the first barrier layer using the third via opening and the masking layer to form a trench and a via, and filling the trench and the via with a conductor to form a trench and via conductor in contact with the first conductor.
摘要翻译：集成电路制造方法包括提供基底，形成第一导体，形成第一阻挡层，形成第一介电层，形成掩模层。该方法还包括在掩模层中形成第一通孔，在掩模层中形成第一沟槽开口，同时在掩模层下方的层中形成第二通孔，并形成穿过掩模层的第二沟槽开口，在掩模层下面的层中并且同时在掩模层下方的另一层中形成第三通孔。该方法还包括使用第三通孔开口和掩模层去除第一阻挡层以形成沟槽和通孔，以及用导体填充沟槽和通孔以形成与第一导体接触的沟槽和通孔导体。

4. 发明申请

US20060003573A1 Method to fabricate aligned dual damacene openings 有权
标题翻译：制造对齐双重断裂孔的方法
公开(公告)号：US20060003573A1
公开(公告)日：2006-01-05
申请号：US11174805
申请日：2005-07-05
申请人： Yeow Lim , Wuping Liu , Tae Lee , Bei Zhang , Juan Boon Tan , Alan Cuthbertson , Chin Neo
发明人： Yeow Lim , Wuping Liu , Tae Lee , Bei Zhang , Juan Boon Tan , Alan Cuthbertson , Chin Neo
IPC分类号： H01L21/4763
CPC分类号： H01L21/76807 , H01L21/76829 , H01L21/76834
摘要： An aligned dual damascene opening structure, comprising the following. A structure having a metal structure formed thereover. A patterned layer stack over the metal structure; the layer stack comprising, in ascending order: a patterned bottom etch stop layer; a patterned lower dielectric material layer; a patterned middle etch stop layer; and a patterned middle dielectric material layer; the lower and middle dielectric layers being comprised of the same material. An upper trench opening in the patterned bottom etch stop layer and the patterned lower dielectric material layer; and a lower via opening in the patterned middle etch stop layer and the patterned middle dielectric material layer. The lower via opening being in communication with the upper trench opening. Wherein the upper trench opening and the lower via opening comprise an aligned dual damascene opening.
摘要翻译：对准的双镶嵌开口结构，包括以下。具有形成在其上的金属结构的结构。金属结构上的图案层叠层; 所述层堆叠按升序包括：图案化的底部蚀刻停止层; 图案化的下介电材料层; 图案化的中间蚀刻停止层; 和图案化的中间介电材料层; 下部和中间介电层由相同的材料组成。在图案化的底部蚀刻停止层和图案化的下部介电材料层中的上部沟槽开口; 以及图案化的中间蚀刻停止层和图案化的中间介电材料层中的下通孔开口。下通道开口与上沟槽开口连通。其中上沟槽开口和下通孔开口包括对准的双镶嵌开口。

5. 发明授权

US06451687B1 Intermetal dielectric layer for integrated circuits 有权
公开(公告)号：US06451687B1
公开(公告)日：2002-09-17
申请号：US09721898
申请日：2000-11-24
申请人： Huang Liu , John Sudijono , Juan Boon Tan , Edwin Goh , Alan Cuthbertson , Arthur Ang , Feng Chen , Qiong Li , Peter Chew
发明人： Huang Liu , John Sudijono , Juan Boon Tan , Edwin Goh , Alan Cuthbertson , Arthur Ang , Feng Chen , Qiong Li , Peter Chew
IPC分类号： H01L214763
CPC分类号： H01L21/76826 , H01L21/31612 , H01L21/31629 , H01L21/76831
摘要： An intermetal dielectric structure for integrated circuits and a manufacturing method therefore is provided having a premetal dielectric and a metal line thereon, with a SRO liner on the premetal dielectric layer and the metal lines, a FGS dielectric layer over the SRO liner, a SRO film over the FGS dielectric layer, and a TEOS dielectric layer over the SRO film. Vias through the FGS dielectric layer are treated to have fluorine-free regions around the vias. The structure is not subject to fluorine attack on the metal lines or vias while having a stable FGS dielectric layer with less fluorine out-gassing and out-diffusion.

6. 发明授权

US06528886B2 Intermetal dielectric layer for integrated circuits 有权
标题翻译：用于集成电路的金属间电介质层
公开(公告)号：US06528886B2
公开(公告)日：2003-03-04
申请号：US10135330
申请日：2002-04-29
申请人： Huang Liu , John Sudijono , Juan Boon Tan , Edwin Goh , Alan Cuthbertson , Arthur Ang , Feng Chen , Qiong Li , Peter Chew
发明人： Huang Liu , John Sudijono , Juan Boon Tan , Edwin Goh , Alan Cuthbertson , Arthur Ang , Feng Chen , Qiong Li , Peter Chew
IPC分类号： H01L2348
CPC分类号： H01L21/76826 , H01L21/31612 , H01L21/31629 , H01L21/76831
摘要： An intermetal dielectric structure for integrated circuits is provided having a premetal dielectric and a metal line thereon, with a SRO liner on the premetal dielectric layer and the metal lines, a FGS dielectric layer over the SRO liner, a SRO film over the FGS dielectric layer, and a TEOS dielectric layer over the SRO film. Vias through the FGS dielectric layer are treated to have fluorine-free regions around the vias. The structure is not subject to fluorine attack on the metal lines or vias while having a stable FGS dielectric layer with less fluorine out-gassing and out-diffusion.
摘要翻译：提供了一种用于集成电路的金属间电介质结构，其上具有前金属电介质和金属线，在前金属介电层和金属线上具有SRO衬垫，在SRO衬垫上的FGS电介质层，在FGS介电层上的SRO膜，以及SRO膜上的TEOS电介质层。通过FGS介电层的通孔被处理成在通孔周围具有无氟区域。该结构不会对金属线或通孔发生氟侵蚀，同时具有较少氟排出和扩散的稳定的FGS介电层。

7. 发明申请

US20050090095A1 Method to fabricate aligned dual damascene openings 有权
公开(公告)号：US20050090095A1
公开(公告)日：2005-04-28
申请号：US10690998
申请日：2003-10-22
申请人： Yeow Lim , Wuping Liu , Tae Lee , Bei Zhang , Juan Tan , Alan Cuthbertson , Chin Neo
发明人： Yeow Lim , Wuping Liu , Tae Lee , Bei Zhang , Juan Tan , Alan Cuthbertson , Chin Neo
IPC分类号： H01L21/4763 , H01L21/768 , H01L29/06
CPC分类号： H01L21/76807 , H01L21/76829 , H01L21/76834
摘要： A method of forming an aligned dual damascene opening, comprising including the following sequential steps. A structure having a metal structure formed thereover is provided. A layer stack is formed over the metal structure. The layer stack comprises, in ascending order: a bottom etch stop layer; a lower dielectric material layer; a middle etch stop layer; a middle dielectric material layer; and an upper dielectric layer. The upper dielectric layer is patterned to form an opening exposing a portion of the underlying middle dielectric material layer. The opening having a width. A patterned mask layer is formed over the patterned upper dielectric layer leaving exposed opposing portions of the patterned upper dielectric layer. The middle dielectric material layer is patterned to form an opening therein using the patterned mask layer and the exposed portions of the upper dielectric layer as masks. The middle dielectric material layer opening exposing a portion of the middle etch stop layer. The middle etch stop layer is removed at its exposed portion to form a patterned middle etch stop layer having an opening exposing a portion of the lower dielectric material layer. Simultaneously patterning: the patterned middle dielectric material layer using the patterned upper dielectric layer as a mask to form an inchoate upper trench opening; and the lower dielectric material layer using the patterned mask layer and the patterned middle etch stop layer as masks to form an inchoate lower via opening aligned with the inchoate upper trench opening. The inchoate lower via opening exposing a portion of the underlying bottom etch stop layer. The patterned mask layer is removed. The patterned upper dielectric material layer, the exposed portions of the patterned middle etch stop layer and the exposed portion of the bottom etch stop layer are removed to convert: the inchoate upper trench opening into a final upper trench opening; and the inchoate lower via opening into a final lower via opening to form the dual damascene opening.

8. 发明授权

US08361443B2 Peptide-based compounds 失效
公开(公告)号：US08361443B2
公开(公告)日：2013-01-29
申请号：US11570090
申请日：2005-06-15
申请人： Alan Cuthbertson
发明人： Alan Cuthbertson
IPC分类号： A61K49/04
CPC分类号： A61K51/088 , A61K47/60 , A61K47/62 , A61K47/64 , A61K51/082 , C07K7/02 , C07K7/06 , C07K14/70546 , C07K14/78
摘要： The invention relates to new peptide-based compounds for use as diagnostic imaging agents or as therapeutic agents wherein the agents comprise targeting vectors which bind to integrin receptors.

9. 发明申请

US20120251449A1 ALDH: A COMPOUND FOR CANCER STEM CELL IMAGING 审中-公开
标题翻译： ALDH：用于癌症干细胞成像的化合物
公开(公告)号：US20120251449A1
公开(公告)日：2012-10-04
申请号：US13510398
申请日：2010-12-22
申请人： Vijaya Raj Kuniyil Kulangara , Alan Cuthbertson , Peter Iveson , Chitralekha Rangaswamy , Veena Rao , Rajiv Bhalla
发明人： Vijaya Raj Kuniyil Kulangara , Alan Cuthbertson , Peter Iveson , Chitralekha Rangaswamy , Veena Rao , Rajiv Bhalla
IPC分类号： A61K51/04 , C07C47/55 , A61P35/00 , C07C223/06 , C07C223/04 , C07C47/353
CPC分类号： A61K31/136 , A61K51/04
摘要： The present invention claims fluoro- & iodo-containing aldehydes as ALDH substrates for use as diagnostic imaging agents or as therapeutic agents. The aldehydes are both directly and indirectly attached to an aromatic or a straight chain ring. ALDH activity was monitored either by the formation of acid-product or consumption of aldehyde substrates.
摘要翻译：本发明要求氟 - 碘基醛作为ALDH底物用作诊断显像剂或作为治疗剂。醛直接和间接连接到芳环或直链环上。通过酸产物的形成或醛底物的消耗来监测ALDH活性。

10. 发明授权

US08273325B2 Contrast agents 失效
标题翻译：对比剂
公开(公告)号：US08273325B2
公开(公告)日：2012-09-25
申请号：US12519183
申请日：2007-12-19
申请人： Helge Tolleshaug , Alan Cuthbertson , Hege Karlsen
发明人： Helge Tolleshaug , Alan Cuthbertson , Hege Karlsen
IPC分类号： A61K51/00 , A61M36/14
CPC分类号： A61K49/0054 , A61K49/0032 , A61K49/0056
摘要： The present invention provides novel compounds and pharmaceutical compositions containing such compounds, wherein the compounds have affinity for proteoglycans. The compounds comprise an amino acid based core unit linked to positively charged moieties. The compounds further comprise at least one imaging moiety detectable in in vivo imaging making the compounds useful as diagnostic contrast agents for imaging of proteoglycans, such as heparan sulphate proteoglycans.
摘要翻译：本发明提供含有这些化合物的新化合物和药物组合物，其中化合物对蛋白聚糖具有亲和力。所述化合物包含与带正电荷部分连接的基于氨基酸的核心单元。所述化合物还包含在体内成像中可检测的至少一个成像部分，使得该化合物可用作蛋白聚糖成像的诊断造影剂，例如硫酸乙酰肝素蛋白聚糖。

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